Low temperature polysilicon chemical vapor deposition system for thin film transistor liquid crystal diode Available to Purchase

Polysilicon thin film transistor (TFT)-based displays are increasingly found in cell phones, mobile communicators, PDAs, portable DVD players, and mobile computers because they have high resolution and low power consumption. The AKT plasma-enhanced chemical vapor deposition system made by Applied Materials is used to deposit multilayer dielectric films including precursor low-hydrogen-content amorphous silicon for manufacturing these displays. The polysilicon film is converted from an amorphous precursor film by an excimer laser annealing process. Production of a good quality polysilicon precursor film requires that the hydrogen content of the film be controlled below 2%. Achieving low hydrogen content requires uniform treatment at high temperature $(500±10 °C)$ after deposition. This article describes the design and performance of the large, high temperature heat chamber integrated in a cluster-tool-based deposition system for both preheat and postannealing of the substrate. [Q. Shang, J. K. Kardokus, and A. Hosokawa, U.S. patent pending (Dec. 2000).]