We studied the effects of Ge preamorphization (PAM) and Ti deposition method on 0.25 μm Ti-salicide junctions in comparison with As PAM. For each PAM scheme, ion implantations are performed at 2E14 ion/cm2 dose and 20 keV energy using and ion sources. Ionized physical vapor deposition and collimated type dc-magnetron sputtering are used for depositing ∼300 Å Ti for this study. Ge PAM showed lower sheet resistance (∼48 Ω /sq.) and better within-wafer uniformity than As PAM at 0.25 μm line width of -well junctions. This is attributed to enhanced C54-silicidation at junction. At junctions, comparable performance in sheet-resistance reduction at fines lines for both As and Ge PAM schemes. Junction leakage current (JLC) levels are below ∼1E14 A/μm2 at area patterns for all process conditions, whereas no degradation in JLC are shown under Ge PAM condition even at edge-intensive patterns. Junction breakdown voltage and contact resistances are satisfactory at all process conditions.
Skip Nav Destination
Article navigation
July 2001
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Research Article|
July 01 2001
Effects of titanium sputtering schemes and preamorphization on the junction characteristics of Ti salicide
Sam-Dong Kim;
Sam-Dong Kim
Department of Electronic Engineering, Dongguk University, 3-26 Pildong, Joonggu, Seoul 100-715, Korea
Search for other works by this author on:
Hyun-Chang Park;
Hyun-Chang Park
Department of Electronic Engineering, Dongguk University, 3-26 Pildong, Joonggu, Seoul 100-715, Korea
Search for other works by this author on:
In-Seok Hwang;
In-Seok Hwang
Department of Electronic Engineering, Dongguk University, 3-26 Pildong, Joonggu, Seoul 100-715, Korea
Search for other works by this author on:
Jin-Koo Rhee;
Jin-Koo Rhee
Department of Electronic Engineering, Dongguk University, 3-26 Pildong, Joonggu, Seoul 100-715, Korea
Search for other works by this author on:
Dae-Gyu Park
Dae-Gyu Park
Memory Research and Development Division, Hyundai Electronics Industries Corporation, Limited, San 136-1 Ami-ri, Bubal-eub, Ichon-si, Kyounggi-do 467-701, Korea
Search for other works by this author on:
J. Vac. Sci. Technol. B 19, 1195–1200 (2001)
Article history
Received:
October 02 2000
Accepted:
May 21 2001
Citation
Sam-Dong Kim, Hyun-Chang Park, In-Seok Hwang, Jin-Koo Rhee, Dae-Gyu Park; Effects of titanium sputtering schemes and preamorphization on the junction characteristics of Ti salicide. J. Vac. Sci. Technol. B 1 July 2001; 19 (4): 1195–1200. https://doi.org/10.1116/1.1385686
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
8
Views
Citing articles via
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications
Haochen Zhao, Suho Park, et al.
Machine learning driven measurement of high-aspect-ratio nanostructures using Mueller matrix spectroscopic ellipsometry
Shiva Mudide, Nick Keller, et al.
Related Content
Study of titanium silicide formation using spike anneal for integrated chip manufacturing
J. Vac. Sci. Technol. B (March 2003)
Enhancement of carrier collection efficiency in photodiodes by introducing a salicided polysilicon contact
J. Appl. Phys. (June 2015)
Novel vertical silicon photodiodes based on salicided polysilicon trenched contacts
J. Appl. Phys. (December 2015)
Ti and Co silicide phase formation and transformations on deep-sub-micron gates for ULSI applications
AIP Conference Proceedings (January 1998)
Applications of micro-Raman spectroscopy in salicide characterization for Si device fabrication
J. Vac. Sci. Technol. B (March 2003)