Ferromagnetic films have been successfully grown on GaAs(100) and by molecular beam epitaxy. X-ray diffraction combined with reflection high energy electron diffraction and low energy electron diffraction patterns revealed the epitaxial orientation of and Rutherford backscattering channeling minimum yields, suggest epitaxial films of high crystalline quality. Vibrating sample magnetometry measurements show in-plane uniaxial anisotropy and fourfold in-plane anisotropy for grown on GaAs(100) and respectively. The difference in magnetic anisotropy is interpreted as arising from the interlayer altering the surface symmetry from twofold symmetry for GaAs(100) to fourfold symmetry. Misoriented substrates were also used to increase the step density in the [011] direction, which induced an additional uniaxial anisotropy with a [011] easy axis and a hard axis. This step structure symmetry-induced magnetic anisotropy generated a split field ∼50 Oe in the hard axis for grown on surfaces.
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July 2000
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Papers from the 27th conference on the physics and chemistry of semiductor interfaces
16-20 January 2000
Salt Lake City, Utah (USA)
Research Article|
July 01 2000
Epitaxial ferromagnetic metal/GaAs(100) heterostructures
L. C. Chen;
L. C. Chen
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
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J. W. Dong;
J. W. Dong
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
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B. D. Schultz;
B. D. Schultz
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
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C. J. Palmstro/m;
C. J. Palmstro/m
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
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J. Berezovsky;
J. Berezovsky
Department of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455
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A. Isakovic;
A. Isakovic
Department of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455
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P. A. Crowell;
P. A. Crowell
Department of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455
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N. Tabat
N. Tabat
Recording Head Operations, Seagate Technology, Minneapolis, Minnesota 55435
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J. Vac. Sci. Technol. B 18, 2057–2062 (2000)
Article history
Received:
April 06 2000
Accepted:
May 26 2000
Citation
L. C. Chen, J. W. Dong, B. D. Schultz, C. J. Palmstro/m, J. Berezovsky, A. Isakovic, P. A. Crowell, N. Tabat; Epitaxial ferromagnetic metal/GaAs(100) heterostructures. J. Vac. Sci. Technol. B 1 July 2000; 18 (4): 2057–2062. https://doi.org/10.1116/1.1306297
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