Ultrashallow profiles challenge the capabilities of all characterization techniques. In this article, three diagnostic techniques are tested, secondary ion mass spectrometry (SIMS), capacitance–voltage (C–V) profiling and spreading resistance analysis (SRA). SIMS is used to measure the impurity concentration profiles, C–V is used to measure carrier concentration profiles directly and SRA is used to measure resistivity profiles, from which carrier concentrations can be derived. Both SIMS and SRA are calibrated techniques that relate the measured parameter to concentration or resistivity via calibration standards. C–V derives the carrier concentration directly through a mathematical model and calculation. Some of the assumptions, procedures, and limitations of these three techniques for ultrashallow profiles are reviewed and discussed. For this article these diagnostic techniques were used to examine six wafers that had been plasma doped followed by a rapid thermal anneal and three wafers that had been beamline implemented followed by a soak anneal.

Topics
Semiconductor device fabrication, Crystallographic defects, Materials treatment, Secondary ion mass spectrometry, Mathematical modeling
1.
The National Technology Roadmap for Semiconductors (Semiconductor Industry Association, San Jose, CA, 1997), pp. 46 and 74.
2.
M. J.
Goeckner
,
S. B.
Felch
,
J.
Weeman
,
S.
Mehta
, and
J. S.
Reedholm
,
J. Vac. Sci. Technol. A
17
,
1501
(
1999
).
Google Scholar
Crossref
Search ADS
 
3.
D. Lenoble, M. J. Goeckner, S. B. Felch, Z. Fang, J. Galvier, and A. Grouillet, Proceedings of the 12th International Conference on Ion Implantation Technology ’98, Kyoto, Japan, 22–26 June 1998.
4.
J. M. Ha, J. W. Park, W. S. Kim, W. S. Song, H. J. Song, K. Fujihara, H. K. Kang, S. Felch, M. J. Goeckner, D. H. Ko, and G. C. Lee, 1998 IEEE International Electron Devices Meeting (IEDM, San Francisco, CA, 1998), pp. 639–642.
5.
G. C.-F. Yeap, S. B. Felch, D. Bang, B. Lee, and M.-R. Lin, Proceedings of the 12th International Conference on Ion Implantation Technology ’98, Kyoto, Japan, 22–26 June 1998 (in press).
6.
D. Lenoble, J. Alieu, A. Grouillet, R. Gwoziecki, A. Halimaoui, T. Skotnicki, S. B. Felch, M. J. Goeckner, Z. Fang, S. Mehta, and M. Haond, 1999 IEEE Symposium on VLSI Circuits, Japan, 17–19 June 1998 (submitted for publication).
7.
C. B. Yarling and M. I. Current, in Ion Implantation Science and Technology, 6th ed., edited by J. F. Ziegler (Ion Implantation Tech., Yorktown, NY, 1996), pp. 678–679.
8.
V. K. F. Chia, in Materials and Process Characterization of Ion Implantation, edited by M. I. Current and C. B. Yarling (Ion Beam, Austin, TX, 1997), Sec. 3.2.
9.
Thurber, Mattis, Liu, and Filliben, The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon (National Bureau of Standards Special Publication, Washington, DC, 1981), pp. 400–464.
10.
R. G. Mazur and G. A. Gruber, in Materials and Process Characterization of Ion Implantation, edited by M. I. Current and C. B. Yarling (Ion Beam, Austin, TX, 1997), Sec. 3.1a.
11.
R. Hillard, in Materials and Process Characterization of Ion Implantation, edited by M. I. Current and C. B. Yarling (Ion Beam, Austin, TX, 1997), Sec. 3.1b.
12.
S. B.
Felch
,
D. L.
Chapek
,
S. M.
Malik
,
P.
Maillot
,
E.
Ishida
, and
C. W.
Magee
,
J. Vac. Sci. Technol. B
14
,
336
(
1996
).
Google Scholar
Crossref
Search ADS
 
13.
B. W. Schueler and D. F. Reich, J. Vac. Sci. Technol. B (submitted for publication).
This content is only available via PDF.
© 2000 American Vacuum Society.
2000
American Vacuum Society
You do not currently have access to this content.