Pattern-placement metrology plays a critical role in nanofabrication. Not far in the future, metrology standards approaching 0.2 nm in accuracy will be required to facilitate the production of 25 nm semiconductor devices. They will also be needed to support the manufacturing of high-density wavelength-division-multiplexed integrated optoelectronic devices. We are developing a new approach to metrology in the sub-100 nm domain that is based on using phase-coherent fiducial gratings and grids patterned by interference lithography. This approach is complementary to the traditional mark-detection, or “market plot” pattern-placement metrology. In this article we explore the limitations of laser-interferometer-based mark-detection metrology, and contrast this with ways that fiducial grids could be used to solve a variety of metrology problems. These include measuring process-induced distortions in substrates; measuring patterning distortions in pattern-mastering systems, such as laser and e-beam writers; and measuring field distortions and alignment errors in steppers and scanners. We describe a proposed standard for pattern-placement metrology, which includes both a fiducial grid and market-type marks. Finally, a number of methods through which phase-coherent periodic structures can be patterned are shown, including “traditional” interference lithography, achromatic interference lithography, near-field interference lithography, and scanning-beam interference lithography.
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November 1999
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Papers from the 43rd international conference on electron, ion, and photon beam technology and nanofabrication
1-4 June 1999
Marco Island, Florida (USA)
Research Article|
November 01 1999
Sub-100 nm metrology using interferometrically produced fiducials
M. L. Schattenburg;
M. L. Schattenburg
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
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C. Chen;
C. Chen
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
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P. N. Everett;
P. N. Everett
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
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J. Ferrera;
J. Ferrera
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
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P. Konkola;
P. Konkola
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
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Henry I. Smith
Henry I. Smith
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
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J. Vac. Sci. Technol. B 17, 2692–2697 (1999)
Article history
Received:
June 01 1999
Accepted:
July 15 1999
Citation
M. L. Schattenburg, C. Chen, P. N. Everett, J. Ferrera, P. Konkola, Henry I. Smith; Sub-100 nm metrology using interferometrically produced fiducials. J. Vac. Sci. Technol. B 1 November 1999; 17 (6): 2692–2697. https://doi.org/10.1116/1.591047
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