A key property of nitrides is their large spontaneous and piezoelectric polarization fields that allow significant tailoring of the carrier dynamics and optical properties of nitride devices. In this article, based on first-principles calculations of structural and electronic properties of bulk nitrides and their heterostructures, we investigate the potential of this novel material class for modern device applications by performing self-consistent Monte Carlo simulations. We demonstrate that the internal electric fields have a significant and favorable influence on the transistor characteristics.
REFERENCES
1.
F.
Bernardini
, V.
Fiorentini
, and D.
Vanderbilt
, Phys. Rev. B
56
, R10024
(1997
).2.
J. A.
Majewski
, G.
Zandler
, and P.
Vogl
, Semicond. Sci. Technol.
13
, 90
(1998
).3.
X. H.
Wu
, L. M.
Brown
, D.
Kapolnek
, S.
Keller
, B.
Keller
, S. P.
DenBaars
, and J. S.
Speck
, J. Appl. Phys.
80
, 3228
(1996
);Z.
Liliental-Weber
, C.
Kisielowski
, S.
Ruvimov
, Y.
Chen
, J.
Washburn
, I.
Grzegory
, M.
Bockowski
, J.
Jun
, and S.
Porowski
, J. Electron. Mater.
25
, 1545
(1996
).4.
M.
Städele
, J. A.
Majewski
, and P.
Vogl
, Phys. Rev. B
56
, 6911
(1997
);J. A.
Majewski
, M.
Städele
, and P.
Vogl
, MRS Internet J. Nitride Semicond. Res.
1
, 30
(1996
).5.
A.
Baldereschi
, S.
Baroni
, and R.
Resta
, Phys. Rev. Lett.
61
, 734
(1988
).6.
7.
G.
Martin
, A.
Botchkarev
, A.
Rockett
, and H.
Morkoç
, Appl. Phys. Lett.
68
, 2541
(1996
).8.
G.
Martin
, S.
Strite
, A.
Botchkarev
, A.
Agarwal
, A.
Rockett
, H.
Morkoç
, W. R. L.
Lambrecht
, and B.
Segall
, Appl. Phys. Lett.
65
, 610
(1994
).9.
10.
G.
Zandler
, J. A.
Majewski
, M.
Städele
, P.
Vogl
, and F.
Compagnone
, Phys. Status Solidi B
204
, 133
(1997
).11.
E. T.
Yu
, G. J.
Sullivan
, P. M.
Asbeck
, C. D.
Wang
, D.
Qiao
, and S. S.
Lau
, Appl. Phys. Lett.
71
, 2794
(1997
).12.
13.
K.
Kim
, W. R. L.
Lambrecht
, and B.
Segall
, Phys. Rev. B
53
, 16310
(1996
).14.
R.
Oberhuber
, G.
Zandler
, and P.
Vogl
, Appl. Phys. Lett.
73
, 818
(1998
).15.
Y. F.
Wu
, B. P.
Keller
, D.
Kapolnek
, P.
Kozodoy
, S. P.
Denbaars
, and U. K.
Mishra
, Appl. Phys. Lett.
69
, 1438
(1996
).16.
R.
Gaska
, J. W.
Yang
, A.
Osinsky
, Q.
Chen
, M. A.
Khan
, A. O.
Orlov
, G. L.
Snider
, and M. S.
Shur
, Appl. Phys. Lett.
72
, 707
(1998
).17.
18.
G.
Martin
, A.
Botchkarev
, A.
Rockett
, and H.
Morkoç
, Appl. Phys. Lett.
68
, 2541
(1996
).
This content is only available via PDF.
© 1999 American Vacuum Society.
1999
American Vacuum Society
You do not currently have access to this content.
