Novel structures, in which an AlGaAs/GaAs modulation doped structure is overgrown on an underlying Be-implanted p-type region, are successfully fabricated using a system in which focused-ion-beam (FIB) implantation and molecular-beam epitaxy chambers are connected through a high vacuum tunnel. The two-dimensional electron gas (2DEG) at the heterointerface is well controlled by a voltage applied to the Be-FIB written backgate. Though Be out diffusion into the overgrown layer is observed, the sharp front of the out diffusion enables us to fabricate devices with a small separation between the 2DEG and p-type backgate. The three-dimensional hole gas (3DHG) formed by the Be-FIB implantation is used not only as a backgate but also for measuring the interaction between 2DEG and 3DHG.

Topics
Two-dimensional electron gas, Semiconductors, Heterostructures, Focused ion beam, Epitaxy
1.
E.
Miyauchi
and
H.
Hashimoto
,
Nucl. Instrum. Methods Phys. Res. B
7/8
,
851
(
1985
).
Google Scholar
Crossref
Search ADS
 
2.
H.
Arimoto
,
A.
Kawano
,
H.
Kitada
,
A.
Endoh
, and
T.
Fujii
,
J. Vac. Sci. Technol. B
9
,
2675
(
1991
).
Google Scholar
Crossref
Search ADS
 
3.
F.
Wakaya
,
K.
Umeda
,
J.
Yanagisawa
,
Y.
Yuba
,
S.
Takaoka
,
K.
Murase
, and
K.
Gamo
,
Jpn. J. Appl. Phys., Part 1
33
,
7223
(
1994
).
Google Scholar
Crossref
Search ADS
 
4.
E. H.
Linfield
,
G. A. C.
Jones
,
D. A.
Ritchie
, and
J. H.
Thompson
,
Semicond. Sci. Technol.
8
,
415
(
1993
).
Google Scholar
Crossref
Search ADS
 
5.
K. M.
Brown
,
N.
Turner
,
J. T.
Nicholls
,
E. H.
Linfield
,
M.
Pepper
,
D. A.
Ritchie
, and
G. A. C.
Jones
,
Phys. Rev. B
50
,
15
 
465
(
1994
).
Google Scholar
Crossref
Search ADS
 
6.
A. R.
Hamilton
,
E. H.
Linfield
,
M. J.
Kelly
,
D. A.
Ritchie
,
G. A. C.
Jones
, and
M.
Pepper
,
Phys. Rev. B
51
,
17
 
600
(
1995
).
Google Scholar
Crossref
Search ADS
 
7.
K.-J.
Friedland
,
Y.
Hirayama
,
T.
Fujisawa
,
T.
Saku
, and
S.
Tarucha
,
Physica B
227
,
31
(
1996
).
Google Scholar
Crossref
Search ADS
 
8.
Y.
 
Hirayama
 and
H.
 
Okamoto
,
Jpn. J. Appl. Phys., Part 2
 
24
,
L965
(
1985
);
Google Scholar
Crossref
Search ADS
 
K.
Nakamura
,
T.
Nozaki
,
T.
Shiokawa
,
K.
Toyoda
, and
S.
Namba
,
Jpn. J. Appl. Phys., Part 2
24
,
L903
(
1985
).
Google Scholar
Crossref
Search ADS
 
9.
N. P. R.
Hill
,
J. T.
Nicholls
,
E. H.
Linfield
,
M.
Pepper
,
D. A.
Ritchie
,
A. R.
Hamilton
, and
G. A. C.
Jones
,
J. Phys.: Condens. Matter
8
,
L557
(
1996
).
Google Scholar
 
10.
H.
Rubel
,
A.
Fischer
,
W.
Dietsche
,
K.
von Klitzing
, and
K.
Ebert
,
Phys. Rev. Lett.
78
,
1763
(
1997
).
Google Scholar
Crossref
Search ADS
 
11.
H. Rubel, A. Fischer, W. Dietsche, C. Jorger, K. von Klitzing, and K. Eberl, Proceedings of the 12th International Conference on the Electronic Properties of Two-Dimensional Systems, Tokyo, 1997 (unpublished), p. 525, EP2DS-12.
12.
Although the drag experiments generally have been reported for closely-placed 2DEG double layers (Refs. 9 and 10), the drag effect was clearly observed for a coupling between 2D and 3D for electrons [
P. M.
Solomon
,
P. J.
Proce
,
D. J.
Frank
, and
D. C.
La Tulipe
,
Phys. Rev. Lett.
63
,
2508
(
1989
)]. In case of electron-hole coupling, a combination of 2DEG and 2DHG using modulation doping needs a large layer separation beyond 190 nm (Ref. 11). By replacing 2DHG to 3DHG, the separation can be reduced as shown in this article. Therefore, the present 2DEG-3DHG system is also interesting to study the drag effect.
Google Scholar
Crossref
Search ADS
PubMed
 
13.
T.
Ando
,
J. Phys. Soc. Jpn.
51
,
3900
(
1982
).
Google Scholar
Crossref
Search ADS
 
14.
Y.
Hirayama
and
T.
Saku
,
Semicond. Sci. Technol.
12
,
1465
(
1997
).
Google Scholar
Crossref
Search ADS
 
15.
A.
Takamori
,
E.
Miyauchi
,
H.
Arimoto
,
Y.
Bamba
,
T.
Morita
, and
H.
Hashimoto
,
Jpn. J. Appl. Phys., Part 2
24
,
L414
(
1985
).
Google Scholar
Crossref
Search ADS
 
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© 1998 American Vacuum Society.
1998
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