Emission characteristic of diamond-tip field emitter arrays fabricated by transfer mold technique

Wedge-shaped diamond-tip field emitter arrays were fabricated and characterized. The tip radius of the diamond emitter fabricated by using a silicon mold was about 300 Å. The maximum current density of 800 $μA/cm2$ and the threshold voltage of 600 V were obtained from the diamond-tip field emitter array, which was a better electrical characteristic than that of a flat diamond film. The effects of vacuum pressure upon emission characteristics were investigated. The emission characteristic of the diamond-tip field emitter array was not varied over a wide range of vacuum pressure relatively to the flat diamond film.