Wedge-shaped diamond-tip field emitter arrays were fabricated and characterized. The tip radius of the diamond emitter fabricated by using a silicon mold was about 300 Å. The maximum current density of 800 and the threshold voltage of 600 V were obtained from the diamond-tip field emitter array, which was a better electrical characteristic than that of a flat diamond film. The effects of vacuum pressure upon emission characteristics were investigated. The emission characteristic of the diamond-tip field emitter array was not varied over a wide range of vacuum pressure relatively to the flat diamond film.
Emission characteristic of diamond-tip field emitter arrays fabricated by transfer mold technique
Seongjin Kim, Byeong Kwon Ju, Yun Hi Lee, Beom Soo Park, Young-Joon Baik, Sungkyoo Lim, Myung Hwan Oh; Emission characteristic of diamond-tip field emitter arrays fabricated by transfer mold technique. J. Vac. Sci. Technol. B 1 March 1997; 15 (2): 499–502. https://doi.org/10.1116/1.589608
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