Micron-sized volcano field emitters have been developed and demonstrated using a new fabrication process. The key element of the process is the formation of the volcano-shaped thin-film emitter by sputtering technique, which results in very thin emission sites due to the shadowing effect of the masking oxide disk. For the emitter array with 1.5-μm-diam gate apertures, an anode current of 0.1 μA per emitter was obtained at the gate voltage of about 88 V. The emission performance is comparable to that of the cone-like field emitter with the same gate hole size. Since the field conversion factor of an off-axis rim must be much smaller than that of the apex of a cone emitter with the same effective emission radius, the comparable operating voltage between two types implies the formation of the rim emitters with extremely thin emission sites by the new process.
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March 1997
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
The 9th international vacuum microelectronics conference
7-12 Jul 1996
St.Petersburg (Russia)
Research Article|
March 01 1997
Fabrication and characterization of volcano-shaped field emitters surrounded by planar gates
Chun Gyoo Lee;
Chun Gyoo Lee
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea
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Byung Gook Park;
Byung Gook Park
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea
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Jong Duk Lee
Jong Duk Lee
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea
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J. Vac. Sci. Technol. B 15, 464–467 (1997)
Article history
Received:
August 25 1996
Accepted:
November 04 1996
Citation
Chun Gyoo Lee, Byung Gook Park, Jong Duk Lee; Fabrication and characterization of volcano-shaped field emitters surrounded by planar gates. J. Vac. Sci. Technol. B 1 March 1997; 15 (2): 464–467. https://doi.org/10.1116/1.589600
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