We have fabricated a gated silicon field emitter array for which the silicon tips are coated with a diamondlike-carbon film (DLC). Silicon oxide disks were patterned on the silicon substrate, and the tips were formed using conventional dry etching. With the oxide caps covering the tips, the insulating layer, molybdenum gate film, and aluminum parting layer were deposited. At this stage the oxide caps were removed to expose the silicon tips and a DLC-carbon film was deposited onto the tips.

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