Influence of plasma gas and postcleaning on the electrical characteristics of plasma-exposed $Al/n-Si$ Schottky diodes

The influence of plasma exposure at self-bias voltages less than 200 V on electrical characteristics of $Al/n-Si$ diodes was examined. In particular, the influence of chemical cleaning on the electrical characteristics of plasma-exposed diodes was examined. In Ar, $N2,$ and $O2$ plasma exposure followed by postcleaning, the electrical characteristics were the same as that of a nonplasma-exposed diode. The postcleaning treatment removed the damage layer formed during plasma exposure. On the other hand, in the diodes exposed to $H2$ and $H2$-containing plasma followed by the postcleaning treatment, the electrical characteristics was not improved by the postcleaning treatment: the Schottky barrier height increased. The H-incorporated zone was not removed by the postcleaning treatment.