The influence of plasma exposure at self-bias voltages less than 200 V on electrical characteristics of diodes was examined. In particular, the influence of chemical cleaning on the electrical characteristics of plasma-exposed diodes was examined. In Ar, and plasma exposure followed by postcleaning, the electrical characteristics were the same as that of a nonplasma-exposed diode. The postcleaning treatment removed the damage layer formed during plasma exposure. On the other hand, in the diodes exposed to and -containing plasma followed by the postcleaning treatment, the electrical characteristics was not improved by the postcleaning treatment: the Schottky barrier height increased. The H-incorporated zone was not removed by the postcleaning treatment.
Influence of plasma gas and postcleaning on the electrical characteristics of plasma-exposed Schottky diodes
Tsukasa Kuroda, Zhangda Lin, Hiroaki Iwakuro, Shinji Sato; Influence of plasma gas and postcleaning on the electrical characteristics of plasma-exposed Schottky diodes. J. Vac. Sci. Technol. B 1 March 1997; 15 (2): 232–236. https://doi.org/10.1116/1.589270
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