During the development of a 0.5 μm, n‐type poly, complementary metal–oxide–semiconductor (MOS) process the influence of different process steps on the PMOS gate doping level was investigated. The application of spreading resistance measurements and secondary ion microscopy analysis for determination of the polysilicon dopant profile allowed us to define critical process conditions within which the process could be optimized using short loop tests. The influence of the polysilicon thickness and phosphorus doping level, of the p+ source/drain implantation dose, of the subsequent temperature steps, and of the silicidation were all investigated. It was concluded that a combination of certain process conditions, such as a polysilicon implant dose of 4.0×1015 combined with a p‐plus dose of 3.0×1015, does lead to unacceptably low active carrier concentrations, which are proven to result in gate depletion. Furthermore, it was noted that in case of low net impurity concentrations the modification of any of the processing conditions has a large influence on the final polysilicon spreading resistance probe profile. A detailed discussion of the different parameters and the resulting doping profiles are given in the article. Based on the results of the short loop tests the p‐plus implant dose was fixed at 2.0×1015. A full transistor lot was processed in which the remaining parameter, i.e., the polysilicon implantation dose, was varied. The device characteristics determined on this lot are in agreement with predictions, based on the results of the experiment.
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January 1996
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
The 3rd International Workshop on the Measurement and Characterization of Ultra‐Shallow Doping Profiles in Semiconductors
20−22 Mar 1995
Research Triangle Park, NC (USA)
Research Article|
January 01 1996
Importance of determining the polysilicon dopant profile during process development
I. Debusschere;
I. Debusschere
IMEC vzw, Kapeldreef 75, B‐3001 Leuven, Belgium
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L. Deferm;
L. Deferm
IMEC vzw, Kapeldreef 75, B‐3001 Leuven, Belgium
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W. Vandervorst
W. Vandervorst
IMEC vzw, Kapeldreef 75, B‐3001 Leuven, Belgium
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J. Vac. Sci. Technol. B 14, 265–271 (1996)
Article history
Received:
February 10 1995
Accepted:
October 23 1995
Citation
I. Debusschere, L. Deferm, W. Vandervorst; Importance of determining the polysilicon dopant profile during process development. J. Vac. Sci. Technol. B 1 January 1996; 14 (1): 265–271. https://doi.org/10.1116/1.588459
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