The surface reaction mechanism of Ga(CH3)3 (trimethylgallium: TMG) on GaAs during monolayer growth by molecular layer epitaxy was investigated by quadrupole mass spectroscopy. The desorbed species by the reaction of TMG on GaAs (001), (111)As, and (111)Ga surfaces have been studied by the quadrupole mass spectroscopy signals. At 420–510 °C, adsorbed monolayers of GaCH3 are formed on the GaAs (001) surface by sufficient TMG introduction. The adsorbed GaCH3 form Ga and CH3 with a time constant of 15–36 s in the transient state. Furthermore, the decomposition of TMG occurs on this adsorbed GaCH3 or Ga layer as the steady state reaction progresses and volatile GaCH3, Ga(CH3)2, and CH3 are produced. In the case of (111)As, TMG decomposed into Ga and CH3 above 480 °C, below which the volatile adsorbates GaCH3 and Ga(CH3)2 are formed. These adsorbates migrate on the surface and react with each other or with TMG, gradually decomposing into Ga. TMG adsorbs temporarily on the (111)Ga surface and decomposes into GaCH3 and Ga(CH3)2 and they desorb quickly; therefore no adsorbates stay on the (111)Ga surface after TMG injection. At temperatures below 450 °C, TMG adsorbs on the (111)Ga surface with no TMG decomposition.
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January 1996
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Research Article|
January 01 1996
Surface reaction of trimethylgallium on GaAs
Jun‐ichi Nishizawa;
Jun‐ichi Nishizawa
Tohoku University, 2‐1‐1 Katahira, Aoba‐ku, Sendai 980, Japan
Semiconductor Research Institute, Kawauchi, Aoba‐ku, Sendai 980, Japan
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Hiroshi Sakuraba;
Hiroshi Sakuraba
Faculty of Engineering, Tohoku University, Aoba, Aramaki, Aoba‐ku, Sendai 980, Japan
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Toru Kurabayashi
Toru Kurabayashi
Faculty of Engineering, Tohoku University, Aoba, Aramaki, Aoba‐ku, Sendai 980, Japan
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J. Vac. Sci. Technol. B 14, 136–146 (1996)
Article history
Received:
November 20 1992
Accepted:
October 06 1995
Connected Content
A correction has been published:
Erratum: Surface reaction of trimethylgallium on GaAs [J. Vac. Sci. Technol. B 14, 136 (1996)]
Citation
Jun‐ichi Nishizawa, Hiroshi Sakuraba, Toru Kurabayashi; Surface reaction of trimethylgallium on GaAs. J. Vac. Sci. Technol. B 1 January 1996; 14 (1): 136–146. https://doi.org/10.1116/1.589016
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