Growth of very low deep impurity density (N_t<5×10¹¹ cm⁻³) In_xGa_1−xP on GaAs by metalorganic chemical vapor deposition Available to Purchase

In_xGa_1−xP layers lattice matched and lattice mismatched to GaAs substrates have been grown by metalorganic chemical vapor deposition (MOCVD). Deep level transient spectroscopy, double crystal x‐ray diffraction, and current–voltage measurement were employed to characterize In_xGa_1−xP layers and In_xGa_1−xP/GaAs heterojunctions. We have observed a shallow electron trap located at E_C−60 meV in In_xGa_1−xP layers with x<0.469, and a deep electron trap at E_C−0.85 eV with x≳0.532. However, no deep levels were detected in In_xGa_1−xP (0.469<x<0.532) layers. The deep levels, if they exist, have a concentration of less than 5×10¹¹ cm⁻³ which is the lowest deep level concentration reported so far in MOCVD grown In_xGa_1−xP materials. This is also the first observation in which lattice mismatches ranging from −0.125% to +0.224% (0.469<x <0.532) do not generate deep levels in MOCVD grown In_xGa_1−xP.