Theoretical studies are summarized which show that (i) anion‐site antisite defects AlSb in AlSb barriers and (ii) interfacial native defects such as AsAl at AlAs‐like interfaces are the origin of electrons in nominally undoped InAs quantum wells of AlSb/InAs heterojunctions. Tamm interface states, while present at the InSb‐like interfaces, lie at too low energy to account for the observed carrier densities.

Topics
Doping, Electronic transport, Semiconductors, Heterostructures, Quantum wells, Crystallographic defects
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© 1995 American Vacuum Society.
1995
American Vacuum Society
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