The morphology of molecular‐beam epitaxy (MBE) grown GaAs/NiAl/GaAs structures using scanning tunneling microscopy (STM) was investigated. Improving the flatness of the NiAl layer is achieved by improving the wettability of NiAl on GaAs by using a Ni template and increasing the island density by low‐temperature growth. This method gives a continuous, flat NiAl film with a mean roughness of one monolayer. A GaAs overlayer with a roughness of two monolayers or less is obtainable by using low‐temperature migration enhanced epitaxy (MEE).
This content is only available via PDF.
© 1994 American Vacuum Society.
1994
American Vacuum Society
You do not currently have access to this content.