The morphology of molecular‐beam epitaxy (MBE) grown GaAs/NiAl/GaAs structures using scanning tunneling microscopy (STM) was investigated. Improving the flatness of the NiAl layer is achieved by improving the wettability of NiAl on GaAs by using a Ni template and increasing the island density by low‐temperature growth. This method gives a continuous, flat NiAl film with a mean roughness of one monolayer. A GaAs overlayer with a roughness of two monolayers or less is obtainable by using low‐temperature migration enhanced epitaxy (MEE).

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