Ultra‐shallow, boxlike impurity profiles are produced using gas immersion laser doping (GILD) and then analyzed by spreading resistance profilometry (SRP) and secondary ion mass spectrometry (SIMS) to determine the impurity distribution. At high concentrations, the profiles obtained by SRP exhibit the expected boxlike shape over the entire range of junction depths: The measured concentration within the junction region is uniform while the dopant gradient at the junction exceeds 1 decade/5 nm. In comparison, the same profiles analyzed using high primary ion energy SIMS show a broader transition at the metallurgical junction. Caused by knock‐ons and ion mixing during the sputtering process, the inaccuracy is markedly reduced by lowering the acceleration energy of the primary Cs+ ion beam. At lower concentrations (<1019/cm3), profiles analyzed by SRP exhibit shallower junctions than expected. Electrical measurements of diodes and Hall structures show that high‐quality, ultra‐shallow n+p, np, and pn junctions are fabricated with good dose control using GILD. For complete characterization of GILD, accurate measurement of both chemical and electrically active dopant profiles are required. At present, neither SIMS nor SRP provides an entirely accurate impurity profile.
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January 1994
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Second international workshop on the measurement and characterization of ultrashallow doping profiles in semiconductors
23−25 Mar 1993
Res. Triangle Park, North Carolina (USA)
Research Article|
January 01 1994
Ultra‐shallow boxlike profiles fabricated by pulsed ultraviolet‐laser doping process
Emi Ishida;
Emi Ishida
Stanford University, Stanford, California 94305
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Thomas W. Sigmon;
Thomas W. Sigmon
Stanford University, Stanford, California 94305
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Kurt H. Weiner;
Kurt H. Weiner
Lawrence Livermore National Laboratory, Livermore, California 94551
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Michael R. Frost
Michael R. Frost
Evans East, Plainsboro, New Jersey 08536
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J. Vac. Sci. Technol. B 12, 399–404 (1994)
Article history
Received:
March 23 1993
Accepted:
September 14 1993
Citation
Emi Ishida, Thomas W. Sigmon, Kurt H. Weiner, Michael R. Frost; Ultra‐shallow boxlike profiles fabricated by pulsed ultraviolet‐laser doping process. J. Vac. Sci. Technol. B 1 January 1994; 12 (1): 399–404. https://doi.org/10.1116/1.587135
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