Numerical simulation is used to model ion etching in trilayer lithography. The simulations are capable of capturing the evolution of the boundary between two materials as well as the physically observed phonemena reactive ion etching lag and undercutting. Numerical results are compared with experimental data and a good agreement is found except close to the material interface where the slope of the surface is large. This error is attributed to a purely energy dependent yield used in the simulations.
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Letter| July 01 1993
Modeling of multilayer ion etching processes
S. J. Sherwin;
G. E. Karniadakis;
S. J. Sherwin, E. Barouch, G. E. Karniadakis, S. A. Orszag; Modeling of multilayer ion etching processes. J. Vac. Sci. Technol. B 1 July 1993; 11 (4): 1310–1313. https://doi.org/10.1116/1.586934
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