Application of an in situ hydrogen plasma to the epitaxial regrowth of InP grown by molecular beam epitaxy

The application of an in situ electron cyclotron resonance (ECR) generated H plasma to produce high quality growth interrupted interfaces on both n‐ and p‐type InP has been investigated. The H plasma was applied to epitaxial layers as well as to surfaces that were passivated by sulfur or an UV/ozone oxide. An in situ reflection high energy electron diffraction (RHEED) and a vacuum‐linked Auger spectrometer were used to determine surface characteristics. Postgrowth analysis of the interfaces was done by C–V profiling and secondary ion mass spectroscopy measurements. Results indicate that the effectiveness of the H plasma is sensitive to the magnetic field configuration of the ECR source and the gas flows in the discharge chamber. In certain configurations the plasma is effective at removing passivating layers; however, a high P₂ overpressure must be maintained to compensate for excess depletion of phosphorus from the substrate. High quality interfaces were obtained on n‐type material, while p‐type interfaces had a defect density as low as 8×10¹¹ cm⁻²..