In this article, we present the results of a systematic study of residual impurities in unintentionally doped GaAs and InP grown by chemical beam epitaxy. They are characterized using optical measurements and secondary‐ion mass spectrometry which provide both the concentration and the chemical nature of the impurities. We have found that the residual carrier concentration in GaAs depends strongly on the arsine cracker cell temperature and that dominant n‐type impurities such as sulfur and selenium originate from arsine. In contrast, InP is much less sensitive to the phosphine cracker cell temperature and the concentration of carbon is greatly reduced compared to GaAs.
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© 1993 American Vacuum Society.
1993
American Vacuum Society
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