Lateral p–n junctions between quasi‐two‐dimensional electron and hole systems at corrugated GaAs/AlGaAs interfaces

We report on a numerical study of the potential profile and energy states of lateral p–n junctions at the GaAs/AlGaAs interface. The junctions arise from the amphoteric nature of Si doping during molecular‐beam epitaxial growth on {100} versus {111} surfaces and have been previously realized experimentally through selective chemical etching. We find that the occurrence of a lateral p–n junction is sensitive to the doping of the overlayer and for Si doping concentrations less than 5 × 10¹⁷ cm⁻³ in Al_0.3Ga_0.7As, the p–n junction vanishes. We have studied the formation of a quantum wire in a V‐groove structure and show that a one‐dimensional system is in fact formed which may be controlled by the reverse bias applied between the n and p regions.