We report on a numerical study of the potential profile and energy states of lateral pn junctions at the GaAs/AlGaAs interface. The junctions arise from the amphoteric nature of Si doping during molecular‐beam epitaxial growth on {100} versus {111} surfaces and have been previously realized experimentally through selective chemical etching. We find that the occurrence of a lateral pn junction is sensitive to the doping of the overlayer and for Si doping concentrations less than 5 × 1017 cm−3 in Al0.3Ga0.7As, the pn junction vanishes. We have studied the formation of a quantum wire in a V‐groove structure and show that a one‐dimensional system is in fact formed which may be controlled by the reverse bias applied between the n and p regions.

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