Covered electrode HgCdTe photoconductor under high illumination levels Available to Purchase

The issue of thermal imaging systems exposed to large photon fluxes is of great practical importance, as it is encountered while observing a scenery which includes ‘‘hot’’ sources. High illumination level phenomena appear when excess carrier density is comparable or larger than majority carrier density in the bulk. This state can be reached quite easily in n‐type HgCdTe detectors due to the moderate doping levels (typically ≤10¹⁵ cm⁻³). A modified expression for the current responsivity is derived, suitable for use at both high and low illumination levels. The quasineutrality assumption is verified; thus the ambipolar equation can be applied to describe high illumination behavior. Photoconductive detectors with and without covered electrodes are measured and analyzed. It is shown that under high illumination levels (1) the dominating recombination mechanism is the phonon assisted Auger process, and (2) the relative photoresponse for a covered electrode structure decreases monotonously with increasing covered electrode length. This is in contrast to low illumination levels where an optimum responsivity is reached. Thus, covered electrode photoconductors provide benefits at both ends of the power spectrum.