Thin homoepitaxial films of gallium phosphide (GaP) have been grown by remote plasma enhanced chemical vapor deposition utilizing in situ generated phosphine precursors. The GaP forming reaction is kinetically controlled with an activation energy of 0.65 eV. The increase of the growth rate with increasing radio frequency (rf) power between 20 and 100 W is due to the combined effects of increasingly complete excitation and the spatial extension of the glow discharge toward the substrate, however, the saturation of the growth rate at even higher rf power indicates the saturation of the generation rate of phosphine precursors at this condition. Slight interdiffusion of P into Si and Si into GaP is indicated from GaP/Si heterostructures grown under similar conditions as the GaP homojunctions.
Remote plasma enhanced chemical vapor deposition of GaP with in situ generation of phosphine precursors
S. W. Choi, G. Lucovsky, K. J. Bachmann; Remote plasma enhanced chemical vapor deposition of GaP with in situ generation of phosphine precursors. J. Vac. Sci. Technol. B 1 May 1992; 10 (3): 1070–1073. https://doi.org/10.1116/1.586079
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