Design parameters for a small storage ring optimized as an x‐ray lithography source

This paper examines the design parameters for a ‘‘compact storage ring’’ which is matched well to x‐ray lithographic requirements, but is as small as possible. This calculation uses a model of a lithographic system which obtains its input parameters from a technology of mask, resist and beam line based on the IBM program at the Brookhaven National Laboratory vacuum ultraviolet electron storage ring. Based on this lithographic system, we model exposure throughput as a function of storage ring parameters to understand which storage ring designs provide adequate but not excessive soft x‐ray flux in the lithographically important region. Our scan of storage ring sources will cover a wide range of energies and magnetic fields, to permit consideration of superconducting as well as more standard strong‐ or weak‐focusing designs. Furthermore, we will show that the results of the calculations presented here can be scaled in a simple way to cover a wide range of x‐ray lithography system assumptions.