A theoretical study of the initial oxidation stages of Si(111) surfaces is undertaken. A Monte Carlo simulation is used to study the individual surface processes that have been suggested in the literature. The relative importance of these mechanisms for the chemical composition of the oxide layer as well as for the initial stages of the formation of SiOx is investigated.

Topics
Materials treatment, Monte Carlo methods, Oxides
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© 1983 American Vacuum Society.
1983
American Vacuum Society
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