Journal of Vacuum Science & Technology B

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Current Issue

Volume 43,

Issue 2,

March 2025

Focus and Coverage

Journal of Vacuum Science & Technology B covers microelectronics and nanometer structures with an emphasis on processing, measurement, and phenomena associated with micrometer, nanometer structures and devices and vacuum science and technology.

Editor-in-Chief

Eray Aydil

Editors

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Current Issue

Featured Articles

Research Article

| February 05 2025

Analysis of the adhesion structure between the cycloolefin polymer and the copper seed layer formed using medium-vacuum sputtering

Akihiro Shimizu, Kazuhiro Fukada et al.

We have developed a novel approach for the fabrication of 6G communication antenna substrates by directly sputtering a copper seed layer onto a resin with low dielectric properties and low ...

Research Article

| November 27 2024

Measurement of field emission array current distributions by metal-coated CMOS image sensors

Mattias Hausladen, Andreas Schels et al.

A CMOS image sensor is utilized to determine the time- and spatially resolved distribution of the total electron emission current of a silicon field emission array. The sensor measures electron ...

Research Article

| November 07 2024

Fabrication of double-grooved gratings using coplanar multibeam holographic lithography with a phase mask

Shiyang Li, Shuhu Huan et al.

Submicrometer double-grooved gratings feature unique optical properties and diverse potential applications, most of which have been fabricated by electron beam lithography up till now. On the other ...

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Editor's Picks

Letter

| April 30 2025

Selective wet etching of atomic layer deposited ferroelectric hafnium zirconium oxide and hafnium oxide thin films

Rushi Jani, David MacMahon et al.

The cointegration of conventional CMOS with high-k hafnium oxide (HfO₂) as the gate dielectric and ferroelectric field effect transistors (FeFETs) with hafnium zirconium oxide (HZO) as the ...

Research Article

| March 18 2025

Tracing degradation mechanisms of epitaxially grown GaAsSb on InP by InSb formation at elevated temperatures

Leonid Miroshnik, Brian D. Rummel et al.

The thermal stability of GaAsSb/InP is known to be compromised by group-V volatility and intermixing at the heterojunction that adversely impact the performance of subsequently fabricated ...

Research Article

| March 17 2025

Extended model for chemically amplified resist with multiple photoacid generators

Delong Yao, Lisong Dong et al.

The chemically amplified resist, which contains photoacid generator (PAG), has been widely used in high-volume integrated circuit manufacturing. Conventional resist models represent postexposure bake ...

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Most Recent

Research Article

| May 01 2025

Study of zinc doped In_0.53Ga_0.47As/InP/InAlAs/InP heterostructures by time-of-flight; magnetic secondary ion spectrometry and high-energy x-ray photoelectron spectroscopy

G. Tsamo Tagougue, M. Veillerot et al.

In this article, we demonstrate that the combination of ToF-SIMS, magnetic SIMS (M-SIMS), and high-energy x-ray photoelectron spectroscopy (HAXPES) is a powerful, comprehensive approach to study the ...

Research Article

| May 01 2025

Low-temperature (<300 °C) crystalline Al₂O₃ thin film deposition by resistive thermal evaporation

Kunal Kumar, Marc Cahay

Crystalline aluminum oxide thin films with high-k dielectric constant are deposited at low temperatures (<300 °C) over soda-lime glass and silicon substrates by a slow resistive thermal ...

Letter

| April 30 2025

Selective wet etching of atomic layer deposited ferroelectric hafnium zirconium oxide and hafnium oxide thin films

Rushi Jani, David MacMahon et al.

The cointegration of conventional CMOS with high-k hafnium oxide (HfO₂) as the gate dielectric and ferroelectric field effect transistors (FeFETs) with hafnium zirconium oxide (HZO) as the ...

View All Recent Articles