Journal of Vacuum Science & Technology B

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Current Issue

Volume 42,

Issue 5,

September 2024

Focus and Coverage

Journal of Vacuum Science & Technology B covers microelectronics and nanometer structures with an emphasis on processing, measurement, and phenomena associated with micrometer, nanometer structures and devices and vacuum science and technology.

Editor-in-Chief

Eray Aydil

Editors

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Current Issue

Featured Articles

Research Article

| August 30 2024

Is the linear relationship between the slope and intercept observed in field emission S-K plots an artifact?

Anthony Ayari, Pascal Vincent et al.

The performance of field emitters is usually analyzed by linear fitting of a Fowler–Nordheim plot. It has sometimes been observed that the fitted slopes and intercepts show a strong correlation, but ...

Research Article

| August 06 2024

Novel low-temperature and high-flux hydrogen plasma source for extreme-ultraviolet lithography applications

A. S. Stodolna, T. W. Mechielsen et al.

Inside extreme-ultraviolet (EUV) lithography machines, a hydrogen plasma is generated by ionization of the background gas by EUV photons. This plasma is essential for preventing carbon build-up on ...

Review Article

| June 07 2024

Future of plasma etching for microelectronics: Challenges and opportunities

Gottlieb S. Oehrlein, Stephan M. Brandstadter et al.

Plasma etching is an essential semiconductor manufacturing technology required to enable the current microelectronics industry. Along with lithographic patterning, thin-film formation methods, and ...

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Editor's Picks

Research Article

| October 08 2024

Constant period line gratings as a metric for patterning fidelity in electron beam lithography

C. R. Fasano, F. Cruz Aguirre et al.

As smaller critical dimensions of devices fabricated via electron-beam lithography (EBL) are achieved over large areas, the need for new metrology techniques follows. Large (cm × cm) ...

Research Article

| September 30 2024

Aperiodic multilayer masks for M3D mitigation in high- and hyper-NA extreme ultraviolet lithography

W. Ethan Maguire, Bruce W. Smith

As extreme ultraviolet lithography tools with higher image numerical apertures (NA_i) are introduced, the range of angles at the multilayer mask stack is also increased. Lithography systems are ...

Research Article

| August 20 2024

Remote plasma-enhanced chemical vapor deposition of GeSn on Si (100), Si (111), sapphire, and fused silica substrates

B. Claflin, G. J. Grzybowski et al.

GeSn films were simultaneously deposited on Si (100), Si (111), c-plane sapphire (Al₂O₃), and fused silica substrates to investigate the impact of the substrate on the resulting GeSn film. The ...

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Most Recent

Research Article

| October 08 2024

Co-optimizing of H-curing, stress, and thermal annealing—A more effective way for realizing FEOL-BEOL compatible eMRAM chip

Zhimeng Yu, Xiaolei Yang et al.

Metallization, plasma, and thermal annealing used in magneto-resistive random access memory integration differs significantly from traditional interconnection processes, usually resulting in the ...

Research Article

| October 08 2024

Constant period line gratings as a metric for patterning fidelity in electron beam lithography

C. R. Fasano, F. Cruz Aguirre et al.

As smaller critical dimensions of devices fabricated via electron-beam lithography (EBL) are achieved over large areas, the need for new metrology techniques follows. Large (cm × cm) ...

Research Article

| October 01 2024

Numerical analysis of Gaussian potential patches model depending on the substrate doping in inhomogeneous Schottky barrier diodes over a wide temperature range

Abdulmecit Turut

The current-voltage (I-V-T) characteristics of an inhomogeneous n-type GaAs Schottky barrier diode have been investigated by numerical analysis using the modified thermionic emission (TE) current ...

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