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Journal of Vacuum Science & Technology B covers microelectronics and nanometer structures with an emphasis on processing, measurement, and phenomena associated with micrometer, nanometer structures and devices and vacuum science and technology.
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Research Article
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August 30 2024
Anthony Ayari, Pascal Vincent et al.
The performance of field emitters is usually analyzed by linear fitting of a Fowler–Nordheim plot. It has sometimes been observed that the fitted slopes and intercepts show a strong correlation, but ...
Research Article
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August 06 2024
A. S. Stodolna, T. W. Mechielsen et al.
Inside extreme-ultraviolet (EUV) lithography machines, a hydrogen plasma is generated by ionization of the background gas by EUV photons. This plasma is essential for preventing carbon build-up on ...
Review Article
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June 07 2024
Gottlieb S. Oehrlein, Stephan M. Brandstadter et al.
Plasma etching is an essential semiconductor manufacturing technology required to enable the current microelectronics industry. Along with lithographic patterning, thin-film formation methods, and ...
Editor's Picks
Research Article
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October 08 2024
C. R. Fasano, F. Cruz Aguirre et al.
As smaller critical dimensions of devices fabricated via electron-beam lithography (EBL) are achieved over large areas, the need for new metrology techniques follows. Large (cm × cm) ...
Research Article
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September 30 2024
W. Ethan Maguire, Bruce W. Smith
As extreme ultraviolet lithography tools with higher image numerical apertures (NAi) are introduced, the range of angles at the multilayer mask stack is also increased. Lithography systems are ...
Research Article
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August 20 2024
B. Claflin, G. J. Grzybowski et al.
GeSn films were simultaneously deposited on Si (100), Si (111), c-plane sapphire (Al2O3), and fused silica substrates to investigate the impact of the substrate on the resulting GeSn film. The ...
Most Recent
Research Article
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October 08 2024
Zhimeng Yu, Xiaolei Yang et al.
Metallization, plasma, and thermal annealing used in magneto-resistive random access memory integration differs significantly from traditional interconnection processes, usually resulting in the ...
Research Article
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October 08 2024
C. R. Fasano, F. Cruz Aguirre et al.
As smaller critical dimensions of devices fabricated via electron-beam lithography (EBL) are achieved over large areas, the need for new metrology techniques follows. Large (cm × cm) ...
Research Article
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October 01 2024
Abdulmecit Turut
The current-voltage (I-V-T) characteristics of an inhomogeneous n-type GaAs Schottky barrier diode have been investigated by numerical analysis using the modified thermionic emission (TE) current ...
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Novel low-temperature and high-flux hydrogen plasma source for extreme-ultraviolet lithography applications
A. S. Stodolna, T. W. Mechielsen, et al.
Infrared optical properties of SiGeSn and GeSn layers grown by molecular beam epitaxy
Glenn G. Jernigan, John P. Murphy, et al.
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