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Journal Articles

In-cycle evolution of thickness and roughness parameters during oxygen plasma enhanced ZnO atomic layer deposition using in situ spectroscopic ellipsometry

Yousra Traouli, Ufuk Kilic, Sema G. Kilic, Matthew Hilfiker, Daniel Schmidt, Stefan Schoeche, Eva Schubert, Mathias Schubert

J. Vac. Sci. Technol. A 42, 052403 (2024)

https://doi.org/10.1116/6.0003830

Published: September 2024

View article titled, In-cycle evolution of thickness and roughness parameters during oxygen plasma enhanced ZnO atomic layer deposition using in situ spectroscopic ellipsometry

Journal Articles

Atomic layer etching of SiO₂ using sequential exposures of Al(CH₃)₃ and H₂/SF₆ plasma

David S. Catherall, Azmain A. Hossain, Anthony J. Ardizzi, Austin J. Minnich

J. Vac. Sci. Technol. A 42, 052605 (2024)

https://doi.org/10.1116/6.0003793

Published: September 2024

View article titled, Atomic layer etching of SiO2 using sequential exposures of Al(CH3)3 and H2/SF6 plasma

Journal Articles

Tuning microstructural and oxidative characteristics of direct current- and high-power pulsed magnetron sputtered MoSi₂-based thin films

Sophie Richter, Ahmed Bahr, Philip Kutrowatz, Tomasz Wojcik, Szilárd Kolozsvári, Peter Polcik, Carmen Jerg, Jürgen Ramm, Helmut Riedl

J. Vac. Sci. Technol. A 42, 053407 (2024)

https://doi.org/10.1116/6.0003833

Published: August 2024

View article titled, Tuning microstructural and oxidative characteristics of direct current- and high-power pulsed magnetron sputtered MoSi2-based thin films

Journal Articles

Enhanced nucleation mechanism in ruthenium atomic layer deposition: Exploring surface termination and precursor ligand effects with RuCpEt(CO)₂

Amnon Rothman, Seunggi Seo, Jacob Woodruff, Hyungjun Kim, Stacey F. Bent

J. Vac. Sci. Technol. A 42, 052402 (2024)

https://doi.org/10.1116/6.0003775

Published: August 2024

View article titled, Enhanced nucleation mechanism in ruthenium atomic layer deposition: Exploring surface termination and precursor ligand effects with RuCpEt(CO)2

Journal Articles

Numerical ellipsometry: AI for real-time, in situ process control for absorbing films growing on unknown transparent substrates

F. K. Urban, III, D. Barton

J. Vac. Sci. Technol. A 42, 053405 (2024)

https://doi.org/10.1116/6.0003817

Published: August 2024

View article titled, Numerical ellipsometry: AI for real-time, in situ process control for absorbing films growing on unknown transparent substrates

Journal Articles

Inherent area selective deposition of silicon dioxide in multilayer 3D SiO_x–SiN_x stacks

Kartik Sondhi, Stephen Ross, Joyeeta Nag, X. C. Guo, Dexin Zhao, Adarsh Rajashekhar, Senaka Kanakamedala

J. Vac. Sci. Technol. A 42, 050403 (2024)

https://doi.org/10.1116/6.0003790

Published: August 2024

View article titled, Inherent area selective deposition of silicon dioxide in multilayer 3D SiOx–SiNx stacks

Journal Articles

Investigation of capacitance for InAs/GaAs quantum dot solar cells by photoreflectance

Behnam Zeinalvand Farzin, Jong Su Kim, Geun Hyeong Kim, DongKun Lee, Im Sik Han, Sang Jun Lee

J. Vac. Sci. Technol. A 42, 053203 (2024)

https://doi.org/10.1116/6.0003787

Published: August 2024

View article titled, Investigation of capacitance for InAs/GaAs quantum dot solar cells by photoreflectance

Journal Articles

Switching of kV-class Ga₂O₃ heterojunction vertical rectifiers

Jian-Sian Li, Chao-Ching Chiang, Hsiao-Hsuan Wan, Meng-Hsun Yu, Yi-Ting Lin, Ying-Yu Yang, Fan Ren, Yu-Te Liao, Stephen J. Pearton

J. Vac. Sci. Technol. A 42, 053204 (2024)

https://doi.org/10.1116/6.0003839

Published: August 2024

View article titled, Switching of kV-class Ga2O3 heterojunction vertical rectifiers

Journal Articles

First principles reaction processes of Co(CO)₃NO as an atomic layer deposition precursor on SiO₂ and Co surfaces

Nickolas M. Ashburn, Xiuyao Lang, Youhwan Jo, Yeonghun Lee, Xiaolong Yao, Kyeongjae Cho

J. Vac. Sci. Technol. A 42, 052401 (2024)

https://doi.org/10.1116/6.0003769

Published: July 2024

View article titled, First principles reaction processes of Co(CO)3NO as an atomic layer deposition precursor on SiO2 and Co surfaces

Journal Articles

Practical guides for x-ray photoelectron spectroscopy: Use of argon ion beams for sputter depth profiling and cleaning

Alexander G. Shard, Mark A. Baker

J. Vac. Sci. Technol. A 42, 050801 (2024)

https://doi.org/10.1116/6.0003681

Published: July 2024

View article titled, Practical guides for x-ray photoelectron spectroscopy: Use of argon ion beams for sputter depth profiling and cleaning

Journal Articles

Growth of high-quality ruthenium films on sapphire

Lena N. Majer, Sander Smink, Wolfgang Braun, Hongguang Wang, Peter A. van Aken, Jochen Mannhart, Felix V. E. Hensling

J. Vac. Sci. Technol. A 42, 052702 (2024)

https://doi.org/10.1116/6.0003756

Published: July 2024

View article titled, Growth of high-quality ruthenium films on sapphire

Journal Articles

Machine learning-based prediction of the electron energy distribution function and electron density of argon plasma from the optical emission spectra

Fatima Jenina Arellano, Minoru Kusaba, Stephen Wu, Ryo Yoshida, Zoltán Donkó, Peter Hartmann, Tsanko V. Tsankov, Satoshi Hamaguchi

J. Vac. Sci. Technol. A 42, 053001 (2024)

https://doi.org/10.1116/6.0003731

Published: July 2024

View article titled, Machine learning-based prediction of the electron energy distribution function and electron density of argon plasma from the optical emission spectra

Journal Articles

MoS₂-assisted growth of highly-oriented AlN thin films by low-temperature van der Waals epitaxy

J. Patouillard, M. Bernard, S. Cadot, R. Gassilloud, N. Bernier, A. Grenier, A. Mantoux, E. Blanquet, F. Martin, C. Raynaud, F. Gianesello

J. Vac. Sci. Technol. A 42, 050401 (2024)

https://doi.org/10.1116/6.0003652

Published: July 2024

View article titled, MoS2-assisted growth of highly-oriented AlN thin films by low-temperature van der Waals epitaxy

Journal Articles

Dry and wet etching of single-crystal AlN

Hsiao-Hsuan Wan, Chao-Ching Chiang, Jian-Sian Li, Nahid Sultan Al-Mamun, Aman Haque, Fan Ren, Stephen J. Pearton

J. Vac. Sci. Technol. A 42, 052601 (2024)

https://doi.org/10.1116/6.0003744

Published: July 2024

View article titled, Dry and wet etching of single-crystal AlN

Journal Articles

Mechanism study of H₂-plasma assisted Si₃N₄ layered etch

Ying Rui, Sumeet Pandey, Chenmeng Hsie, Lan Li

J. Vac. Sci. Technol. A 42, 042603 (2024)

https://doi.org/10.1116/6.0003653

Published: June 2024

View article titled, Mechanism study of H2-plasma assisted Si3N4 layered etch

Journal Articles

Atomic layer etching of SiCO films with surface modification by O₂ and CF₄/NH₃/Ar plasmas and desorption by IR annealing

Nicholas McDowell, Ritchie Scott-McCabe, Phuc N. Phan, Hiroyuki Kobayashi, Nobuya Miyoshi

J. Vac. Sci. Technol. A 42, 042602 (2024)

https://doi.org/10.1116/6.0003596

Published: June 2024

View article titled, Atomic layer etching of SiCO films with surface modification by O2 and CF4/NH3/Ar plasmas and desorption by IR annealing

Journal Articles

Residual stress depth profiles self-developed in cathodic arc deposited Ti-Al-N coatings prepared at different constant substrate bias values

L. B. Varela, P. R. T. Avila, A. Miletić, E. Bousser, J. M. Mendez, J. E. Klemberg-Sapieha, L. Martinu

J. Vac. Sci. Technol. A 42, 043104 (2024)

https://doi.org/10.1116/6.0003555

Published: May 2024

View article titled, Residual stress depth profiles self-developed in cathodic arc deposited Ti-Al-N coatings prepared at different constant substrate bias values

Includes: Supplementary data

Journal Articles

Lattice defects distribution of H⁺ implanted 4H-SiC investigated by deep-ultraviolet Raman spectroscopy

Gengyu Wang, Wenbo Luo, Dailei Zhu, Yuedong Wang, Yao Shuai, Chuangui Wu, Wanli Zhang

J. Vac. Sci. Technol. A 42, 043405 (2024)

https://doi.org/10.1116/6.0003643

Published: May 2024

View article titled, Lattice defects distribution of H+ implanted 4H-SiC investigated by deep-ultraviolet Raman spectroscopy

Journal Articles

Continuous wave laser-assisted evaporation of halide perovskite thin films from a single stoichiometric source

Naga Prathibha Jasti, Shay Tirosh, Ansuman Halder, Eti Teblum, David Cahen

J. Vac. Sci. Technol. A 42, 043406 (2024)

https://doi.org/10.1116/6.0003607

Published: May 2024

View article titled, Continuous wave laser-assisted evaporation of halide perovskite thin films from a single stoichiometric source

Includes: Supplementary data

Journal Articles

In situ atom-resolved observation of Si (111) 7×7 surface with F radical and Ar ion irradiation simulated atomic layer etching

Takayoshi Tsutsumi, Atsuki Asano, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Masaru Hori

J. Vac. Sci. Technol. A 42, 032603 (2024)

https://doi.org/10.1116/6.0003432

Published: April 2024

View article titled, In situ atom-resolved observation of Si (111) 7×7 surface with F radical and Ar ion irradiation simulated atomic layer etching

NARROW

Topics

In-cycle evolution of thickness and roughness parameters during oxygen plasma enhanced ZnO atomic layer deposition using in situ spectroscopic ellipsometry

Atomic layer etching of SiO₂ using sequential exposures of Al(CH₃)₃ and H₂/SF₆ plasma

Tuning microstructural and oxidative characteristics of direct current- and high-power pulsed magnetron sputtered MoSi₂-based thin films

Enhanced nucleation mechanism in ruthenium atomic layer deposition: Exploring surface termination and precursor ligand effects with RuCpEt(CO)₂

Numerical ellipsometry: AI for real-time, in situ process control for absorbing films growing on unknown transparent substrates

Inherent area selective deposition of silicon dioxide in multilayer 3D SiO_x–SiN_x stacks

Investigation of capacitance for InAs/GaAs quantum dot solar cells by photoreflectance

Switching of kV-class Ga₂O₃ heterojunction vertical rectifiers

First principles reaction processes of Co(CO)₃NO as an atomic layer deposition precursor on SiO₂ and Co surfaces

Practical guides for x-ray photoelectron spectroscopy: Use of argon ion beams for sputter depth profiling and cleaning

Growth of high-quality ruthenium films on sapphire

Machine learning-based prediction of the electron energy distribution function and electron density of argon plasma from the optical emission spectra

MoS₂-assisted growth of highly-oriented AlN thin films by low-temperature van der Waals epitaxy

Dry and wet etching of single-crystal AlN

Mechanism study of H₂-plasma assisted Si₃N₄ layered etch

Atomic layer etching of SiCO films with surface modification by O₂ and CF₄/NH₃/Ar plasmas and desorption by IR annealing

Residual stress depth profiles self-developed in cathodic arc deposited Ti-Al-N coatings prepared at different constant substrate bias values

Lattice defects distribution of H⁺ implanted 4H-SiC investigated by deep-ultraviolet Raman spectroscopy

Continuous wave laser-assisted evaporation of halide perovskite thin films from a single stoichiometric source

In situ atom-resolved observation of Si (111) 7×7 surface with F radical and Ar ion irradiation simulated atomic layer etching

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