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Journal Articles

On the use of pulsed DC bias for etching high aspect ratio features

Editor’s Pick
Xingyi Shi, Samaneh Sadighi, Shahid Rauf, Han Luo, Jun-Chieh Wang, Jason Kenney, Jean-Paul Booth, Daniil Marinov, Mickaël Foucher, Nishant Sirse
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 43, 013001 (2025)
https://doi.org/10.1116/6.0003943
Published: December 2024
View article titled, On the use of pulsed DC bias for etching high aspect ratio features
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Journal Articles

Surface passivation approaches for silicon, germanium, and III–V semiconductors

Editor’s Pick
Roel J. Theeuwes, Wilhelmus M. M. Kessels, Bart Macco
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 060801 (2024)
https://doi.org/10.1116/6.0004030
Published: November 2024
View article titled, Surface passivation approaches for silicon, germanium, and III–V semiconductors
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Journal Articles

Low-temperature etching of silicon oxide and silicon nitride with hydrogen fluoride

Editor’s Pick
Thorsten Lill, Mingmei Wang, Dongjun Wu, Youn-Jin Oh, Tae Won Kim, Mark Wilcoxson, Harmeet Singh, Vahid Ghodsi, Steven M. George, Yuri Barsukov, Igor Kaganovich
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 063006 (2024)
https://doi.org/10.1116/6.0004019
Published: November 2024
View article titled, Low-temperature etching of silicon oxide and silicon nitride with hydrogen fluoride
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Journal Articles

Substrate induced composition change during Ge2Sb2Te5 atomic layer deposition and study of initial reactions on SiO2 surface

Editor’s Pick
Jyoti Sinha, Laura Nyns, Annelies Delabie
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 062412 (2024)
https://doi.org/10.1116/6.0003890
Published: November 2024
View article titled, Substrate induced composition change during Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> atomic layer deposition and study of initial reactions on SiO<sub>2</sub> surface
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Journal Articles

Stochastic lattice model for atomic layer deposition and area-selective deposition of metal oxides: Visualization and analysis of lateral overgrowth during area-selective deposition

Editor’s Pick
Nicholas M. Carroll, Gregory N. Parsons
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 062411 (2024)
https://doi.org/10.1116/6.0003838
Published: November 2024
View article titled, Stochastic lattice model for atomic layer deposition and area-selective deposition of metal oxides: Visualization and analysis of lateral overgrowth during area-selective deposition
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Journal Articles

Comparison of Al- and Hf-based hybrid photoresists grown by molecular layer deposition for extreme ultraviolet lithography

Editor’s Pick
Ajay Ravi, Long Viet Than, Jacqueline Lewis, Jingwei Shi, Andreas Werbrouck, Jingyi Han, Miika Mattinen, Stacey F. Bent
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 062407 (2024)
https://doi.org/10.1116/6.0003975
Published: November 2024
View article titled, Comparison of Al- and Hf-based hybrid photoresists grown by molecular layer deposition for extreme ultraviolet lithography
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Journal Articles

Dynamic global model of Cl2/Ar plasmas: Applicability to atomic layer etching processes

Editor’s Pick
T. Rasoanarivo, C. Mannequin, F. Roqueta, M. Boufnichel, A. Rhallabi
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 063003 (2024)
https://doi.org/10.1116/6.0003932
Published: November 2024
View article titled, Dynamic global model of Cl<sub>2</sub>/Ar plasmas: Applicability to atomic layer etching processes
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Journal Articles

Ambient pressure x-ray photoelectron spectroscopy study on the initial atomic layer deposition process of platinum

Editor’s Pick
E. Kokkonen, H.-E. Nieminen, F. Rehman, V. Miikkulainen, M. Putkonen, M. Ritala, S. Huotari, J. Schnadt, S. Urpelainen
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 062406 (2024)
https://doi.org/10.1116/6.0003871
Published: October 2024
View article titled, Ambient pressure x-ray photoelectron spectroscopy study on the initial atomic layer deposition process of platinum
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Journal Articles

Impact of monolayer WS2 surface properties on the gate dielectrics formation by atomic layer deposition

Editor’s Pick
Zaoyang Lin, Sven Dekelver, Daire Cott, Benjamin Groven, Stefanie Sergeant, Thierry Conard, Xiangyu Wu, Pierre Morin, Dennis Lin, Cesar Javier Lockhart de la Rosa, Gouri Sankar Kar, Annelies Delabie
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 062202 (2024)
https://doi.org/10.1116/6.0003894
Published: October 2024
View article titled, Impact of monolayer WS<sub>2</sub> surface properties on the gate dielectrics formation by atomic layer deposition
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Journal Articles

Atomic structure of self-buffered BaZr(S, Se)3 epitaxial thin film interfaces

Editor’s Pick
Michael Xu, Kevin Ye, Ida Sadeghi, R. Jaramillo, James M. LeBeau
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 063207 (2024)
https://doi.org/10.1116/6.0004010
Published: October 2024
View article titled, Atomic structure of self-buffered BaZr(S, Se)<sub>3</sub> epitaxial thin film interfaces
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Journal Articles

Fabrication-related impurity study of thin superconducting Al films using x-ray absorption spectroscopy

Editor’s Pick
Ghadendra B. Bhandari, Thomas R. Stevenson, Emily M. Barrentine, Larry A. Hess, Mikel B. Holcomb
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 063404 (2024)
https://doi.org/10.1116/6.0003949
Published: October 2024
View article titled, Fabrication-related impurity study of thin superconducting Al films using x-ray absorption spectroscopy
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Journal Articles

Isotropic atomic layer etching of MgO-doped lithium niobate using sequential exposures of H2 and SF6/Ar plasmas

Editor’s Pick
Ivy I. Chen, Jennifer Solgaard, Ryoto Sekine, Azmain A. Hossain, Anthony Ardizzi, David S. Catherall, Alireza Marandi, James R. Renzas, Frank Greer, Austin J. Minnich
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 062603 (2024)
https://doi.org/10.1116/6.0003962
Published: October 2024
View article titled, Isotropic atomic layer etching of MgO-doped lithium niobate using sequential exposures of H<sub>2</sub> and SF<sub>6</sub>/Ar plasmas
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Journal Articles

Removing defects from sputter damage on InGaP surfaces using thermal atomic layer etching

Editor’s Pick
Ross Edel, Ezra Alexander, Taewook Nam, Andrew S. Cavanagh, Troy Van Voorhis, Steven M. George
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 062602 (2024)
https://doi.org/10.1116/6.0003899
Published: October 2024
View article titled, Removing defects from sputter damage on InGaP surfaces using thermal atomic layer etching
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Journal Articles

Low-loss and low-temperature Al2O3 thin films for integrated photonics and optical coatings

Editor’s Pick
Pooya Torab Ahmadi, Michael Chesaux, Jacek Wojcik, Dino Deligiannis, Peter Mascher, Jonathan D. B. Bradley
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 063402 (2024)
https://doi.org/10.1116/6.0003976
Published: October 2024
View article titled, Low-loss and low-temperature Al<sub>2</sub>O<sub>3</sub> thin films for integrated photonics and optical coatings
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Journal Articles

Influence of hydrogen-bonded 3-mercaptopropionic acid bilayers on binary self-assembled monolayer formation

Editor’s Pick
Lindsey N. Penland, H. H. Hirushan, N. Dissanayake, Rachael G. Farber
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 063205 (2024)
https://doi.org/10.1116/6.0003926
Published: September 2024
View article titled, Influence of hydrogen-bonded 3-mercaptopropionic acid bilayers on binary self-assembled monolayer formation
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Journal Articles

Effect of Al precursor’s properties on interactions with self-assembled monolayers for area selective deposition

Editor’s Pick
Eryan Gu, Jin Yan, Boxuan Li, Huilong Zhou, Zhuhui Lu, Yanwei Wen, Kun Cao, Rong Chen
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 062403 (2024)
https://doi.org/10.1116/6.0003847
Published: September 2024
View article titled, Effect of Al precursor’s properties on interactions with self-assembled monolayers for area selective deposition
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Journal Articles

Effect of NH3 flow rate to titanium nitride as etch hard mask in thermal atomic layer deposition

Editor’s Pick
Ju Eun Kang, Sang Jeen Hong
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 062402 (2024)
https://doi.org/10.1116/6.0003862
Published: September 2024
View article titled, Effect of NH<sub>3</sub> flow rate to titanium nitride as etch hard mask in thermal atomic layer deposition
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Journal Articles

Process stability of SiO2 atomic layer etching in C4F6/Ar chemistry

Editor’s Pick
Antoine Ronco, F. Boulard, B. Pelissier, N. Posseme
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 062601 (2024)
https://doi.org/10.1116/6.0003822
Published: September 2024
View article titled, Process stability of SiO<sub>2</sub> atomic layer etching in C<sub>4</sub>F<sub>6</sub>/Ar chemistry
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Journal Articles

In-cycle evolution of thickness and roughness parameters during oxygen plasma enhanced ZnO atomic layer deposition using in situ spectroscopic ellipsometry

Editor’s Pick
Yousra Traouli, Ufuk Kilic, Sema G. Kilic, Matthew Hilfiker, Daniel Schmidt, Stefan Schoeche, Eva Schubert, Mathias Schubert
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 052403 (2024)
https://doi.org/10.1116/6.0003830
Published: September 2024
View article titled, In-cycle evolution of thickness and roughness parameters during oxygen plasma enhanced ZnO atomic layer deposition using <em>in situ</em> spectroscopic ellipsometry
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Journal Articles

Atomic layer etching of SiO2 using sequential exposures of Al(CH3)3 and H2/SF6 plasma

Editor’s Pick
David S. Catherall, Azmain A. Hossain, Anthony J. Ardizzi, Austin J. Minnich
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 052605 (2024)
https://doi.org/10.1116/6.0003793
Published: September 2024
View article titled, Atomic layer etching of SiO<sub>2</sub> using sequential exposures of Al(CH<sub>3</sub>)<sub>3</sub> and H<sub>2</sub>/SF<sub>6</sub> plasma
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