Skip to Main Content
Umbrella Alt Text
header search
Search
Advanced Search |Citation Search
Skip Nav Destination

Issues

Volume 9, Issue 3
May 1991
Issue Cover
All Issues
ISSN 0734-2101
EISSN 1520-8559
The gold/high temperature superconductor interface; metallicity of the near surface region and a search for the proximity effect
D. S. Dessau; Z.‐X. Shen; B. O. Wells; W. E. Spicer; R. S. List; A. J. Arko; R. J. Bartlett; C. G. Olson; D. B. Mitzi; C. B. Eom; A. Kapitulnik; T. H. Geballe
J. Vac. Sci. Technol. A 9, 383–389 (1991) https://doi.org/10.1116/1.577418
View articletitled, The gold/high temperature superconductor interface; metallicity of the near surface region and a search for the proximity effect
Open the PDF for in another window
Characterization of bilayer‐metal contacts to high Tc superconducting films
Q. Y. Ma; M. T. Schmidt; L. S. Weinman; E. S. Yang; S. M. Sampere; Siu‐Wai Chan
J. Vac. Sci. Technol. A 9, 390–393 (1991) https://doi.org/10.1116/1.577419
View articletitled, Characterization of bilayer‐metal contacts to high <em>T</em><sub><em>c</em></sub> superconducting films
Open the PDF for in another window
Studies of the behavior of the ‘‘123’’ superconductor system during changes in atmospheric condition
L. M. Chen; T. L. Barr; A. R. Krauss; D. M. Gruen; B. Gady
J. Vac. Sci. Technol. A 9, 394–400 (1991) https://doi.org/10.1116/1.577420
View articletitled, Studies of the behavior of the ‘‘123’’ superconductor system during changes in atmospheric condition
Open the PDF for in another window
Reduced thermal budget processing of Y–Ba–Cu–O high temperature superconducting thin films by metalorganic chemical vapor deposition
R. Singh; S. Sinha; N. J. Hsu; J. T. C. Ng; P. Chou; R. P. S. Thakur; J. Narayan
J. Vac. Sci. Technol. A 9, 401–404 (1991) https://doi.org/10.1116/1.577421
View articletitled, Reduced thermal budget processing of Y–Ba–Cu–O high temperature superconducting thin films by metalorganic chemical vapor deposition
Open the PDF for in another window
Properties of large area ErBa2Cu3O7−x thin films deposited by ionized cluster beams
L. L. Levenson; M. Stan; K. B. Bhasin
J. Vac. Sci. Technol. A 9, 405–408 (1991) https://doi.org/10.1116/1.577422
View articletitled, Properties of large area ErBa<sub>2</sub>Cu<sub>3</sub>O<sub>7−<em>x</em></sub> thin films deposited by ionized cluster beams
Open the PDF for in another window
Growth and characterization of ferroelectric BaMgF4 films
S. Sinharoy; H. Buhay; M. H. Francombe; W. J. Takei; N. J. Doyle; J. H. Rieger; D. R. Lampe; E. Stepke
J. Vac. Sci. Technol. A 9, 409–413 (1991) https://doi.org/10.1116/1.577423
View articletitled, Growth and characterization of ferroelectric BaMgF<sub>4</sub> films
Open the PDF for in another window
Ferroelectric thin films for electronic applications
Gene H. Haertling
J. Vac. Sci. Technol. A 9, 414–420 (1991) https://doi.org/10.1116/1.577424
View articletitled, Ferroelectric thin films for electronic applications
Open the PDF for in another window
Effect of deposition conditions on the properties of thin permalloy film
J. D. Freeman
J. Vac. Sci. Technol. A 9, 421–425 (1991) https://doi.org/10.1116/1.577425
View articletitled, Effect of deposition conditions on the properties of thin permalloy film
Open the PDF for in another window
Anomalous magnetotransport in epitaxial TbSi2−x
F. H. Kaatz; W. R. Graham; J. Van der Spiegel; W. Joss; J. A. Chroboczek
J. Vac. Sci. Technol. A 9, 426–429 (1991) https://doi.org/10.1116/1.577426
View articletitled, Anomalous magnetotransport in epitaxial TbSi<sub>2−<em>x</em></sub>
Open the PDF for in another window
Structural and magnetic properties of ion beam sputtered deposited Cu/Fe multilayers
S. B. Qadri; C. Kim; K. H. Kim; P. Lubitz; M. Twigg
J. Vac. Sci. Technol. A 9, 430–433 (1991) https://doi.org/10.1116/1.577427
View articletitled, Structural and magnetic properties of ion beam sputtered deposited Cu/Fe multilayers
Open the PDF for in another window
Low‐energy (∼100 eV) ion irradiation during growth of TiN deposited by reactive magnetron sputtering: Effects of ion flux on film microstructure
L. Hultman; W.‐D. Münz; J. Musil; S. Kadlec; I. Petrov; J. E. Greene
J. Vac. Sci. Technol. A 9, 434–438 (1991) https://doi.org/10.1116/1.577428
View articletitled, Low‐energy (∼100 eV) ion irradiation during growth of TiN deposited by reactive magnetron sputtering: Effects of ion flux on film microstructure
Open the PDF for in another window
Effect of post‐deposition annealing on structure and chemistry of the TiN film/steel substrate interfaces
A. Erdemir; C. C. Cheng
J. Vac. Sci. Technol. A 9, 439–443 (1991) https://doi.org/10.1116/1.577429
View articletitled, Effect of post‐deposition annealing on structure and chemistry of the TiN film/steel substrate interfaces
Open the PDF for in another window
The preparation of microcrystalline silicon (μc‐Si) thin films by remote plasma‐enhanced chemical vapor deposition
C. Wang; M. J. Williams; G. Lucovsky
J. Vac. Sci. Technol. A 9, 444–449 (1991) https://doi.org/10.1116/1.577430
View articletitled, The preparation of microcrystalline silicon (μ<em>c</em>‐Si) thin films by remote plasma‐enhanced chemical vapor deposition
Open the PDF for in another window
Preparation and characterization of amorphous SiC:H thin films
M. P. Delplancke; J. M. Powers; G. J. Vandentop; M. Salmeron; G. A. Somorjai
J. Vac. Sci. Technol. A 9, 450–455 (1991) https://doi.org/10.1116/1.577431
View articletitled, Preparation and characterization of amorphous SiC:H thin films
Open the PDF for in another window
The influence of ultrathin predeposited platinum layers on the formation of iridium silicide
D. M. Hoffman; J. T. McGinn; H. Gilmartin; L. R. Hewitt; A.‐M. Lanzillotto; D. J. Szostak; F. J. Tams, III; J. H. Thomas, III
J. Vac. Sci. Technol. A 9, 456–460 (1991) https://doi.org/10.1116/1.577432
View articletitled, The influence of ultrathin predeposited platinum layers on the formation of iridium silicide
Open the PDF for in another window
A novel deposition technique for switchable vanadium sesquioxide (V2O3) thin films
F. C. Case
J. Vac. Sci. Technol. A 9, 461–465 (1991) https://doi.org/10.1116/1.577389
View articletitled, A novel deposition technique for switchable vanadium sesquioxide (V<sub>2</sub>O<sub>3</sub>) thin films
Open the PDF for in another window
A magnetically confined and electron cyclotron resonance heated plasma machine for coating and ion surface modification use
P. Kidd
J. Vac. Sci. Technol. A 9, 466–473 (1991) https://doi.org/10.1116/1.577390
View articletitled, A magnetically confined and electron cyclotron resonance heated plasma machine for coating and ion surface modification use
Open the PDF for in another window
Characterization of electronic and optical properties of device quality a‐Si:H and a‐(Si,Ge):H grown by remote plasma electron cyclotron resonance deposition
R. D. Knox; V. L. Dalal; O. A. Popov
J. Vac. Sci. Technol. A 9, 474–479 (1991) https://doi.org/10.1116/1.577391
View articletitled, Characterization of electronic and optical properties of device quality <em>a</em>‐Si:H and <em>a</em>‐(Si,Ge):H grown by remote plasma electron cyclotron resonance deposition
Open the PDF for in another window
Silicon nitride formation from a silane–nitrogen electron cyclotron resonance plasma
J. C. Barbour; H. J. Stein; O. A. Popov; M. Yoder; C. A. Outten
J. Vac. Sci. Technol. A 9, 480–484 (1991) https://doi.org/10.1116/1.577392
View articletitled, Silicon nitride formation from a silane–nitrogen electron cyclotron resonance plasma
Open the PDF for in another window
Using a design of experiments approach for characterization of undoped plasma‐enhanced chemical‐vapor deposited SiO2 film properties
D. D. J. Allman; K. P. Fuchs; J. M. Cuchiaro
J. Vac. Sci. Technol. A 9, 485–491 (1991) https://doi.org/10.1116/1.577393
View articletitled, Using a design of experiments approach for characterization of undoped plasma‐enhanced chemical‐vapor deposited SiO<sub>2</sub> film properties
Open the PDF for in another window
Plasma diagnostic studies of the influence of process variable upon the atomic and molecular species ejected from (1−x)Li4SiO4:xLi3PO4 targets during radio frequency magnetron sputtering
A. L. Wachs; J. B. Bates; N. J. Dudney; C. F. Luck
J. Vac. Sci. Technol. A 9, 492–495 (1991) https://doi.org/10.1116/1.577394
View articletitled, Plasma diagnostic studies of the influence of process variable upon the atomic and molecular species ejected from (1−<em>x</em>)Li<sub>4</sub>SiO<sub>4</sub>:<em>x</em>Li<sub>3</sub>PO<sub>4</sub> targets during radio frequency magnetron sputtering
Open the PDF for in another window
The use of a direct current saddle‐field plasma for the deposition of hydrogenated amorphous silicon
M. Harry; S. Zukotynski
J. Vac. Sci. Technol. A 9, 496–500 (1991) https://doi.org/10.1116/1.577395
View articletitled, The use of a direct current saddle‐field plasma for the deposition of hydrogenated amorphous silicon
Open the PDF for in another window
The measurement of cathode evaporation rate by quartz crystal microbalance
Zhang‐qi Cheng; Chong‐rou Wu; Ming‐sheng Ni
J. Vac. Sci. Technol. A 9, 501–504 (1991) https://doi.org/10.1116/1.577396
View articletitled, The measurement of cathode evaporation rate by quartz crystal microbalance
Open the PDF for in another window
Sputter‐induced changes in permalloy target microstructure
Yi‐Shung Chaug; D. L. Williamson
J. Vac. Sci. Technol. A 9, 505–509 (1991) https://doi.org/10.1116/1.577397
View articletitled, Sputter‐induced changes in permalloy target microstructure
Open the PDF for in another window
e−‐beam deposition of In2O3 stabilized ZrO2 films
S. B. Qadri; E. F. Skelton; M. Z. Harford; R. Jones; P. Lubitz
J. Vac. Sci. Technol. A 9, 510–511 (1991) https://doi.org/10.1116/1.577398
View articletitled, <em>e</em><sup>−</sup>‐beam deposition of In<sub>2</sub>O<sub>3</sub> stabilized ZrO<sub>2</sub> films
Open the PDF for in another window
Ion‐beam deposition of Ag/Fe multilayers and their structural and magnetic properties
S. B. Qadri; C. Kim; M. Twigg; P. Lubitz; M. Rubinstein
J. Vac. Sci. Technol. A 9, 512–514 (1991) https://doi.org/10.1116/1.577399
View articletitled, Ion‐beam deposition of Ag/Fe multilayers and their structural and magnetic properties
Open the PDF for in another window
Effect of deposition parameters on the optical properties and microstructure of radio frequency magnetron sputtered ZnSe films
L. Caneve; S. Scaglione; S. Martelli; G. Emiliani
J. Vac. Sci. Technol. A 9, 515–518 (1991) https://doi.org/10.1116/1.577400
View articletitled, Effect of deposition parameters on the optical properties and microstructure of radio frequency magnetron sputtered ZnSe films
Open the PDF for in another window
Modeling bias sputter planarization of metal films using a ballistic deposition simulation
S. K. Dew; T. Smy; R. N. Tait; M. J. Brett
J. Vac. Sci. Technol. A 9, 519–523 (1991) https://doi.org/10.1116/1.577401
View articletitled, Modeling bias sputter planarization of metal films using a ballistic deposition simulation
Open the PDF for in another window
A fundamental feature scale model for low pressure deposition processes
T. S. Cale; T. H. Gandy; G. B. Raupp
J. Vac. Sci. Technol. A 9, 524–529 (1991) https://doi.org/10.1116/1.577402
View articletitled, A fundamental feature scale model for low pressure deposition processes
Open the PDF for in another window
Cosputtering of alloys. I. Cosputtering of oxides and nitrides using two planar magnetrons
A. Belkind; E. Ezell; W. Gerristead; Z. Orban; P. Rafalko; D. Dow; J. Felts; R. Laird
J. Vac. Sci. Technol. A 9, 530–536 (1991) https://doi.org/10.1116/1.577403
View articletitled, Cosputtering of alloys. I. Cosputtering of oxides and nitrides using two planar magnetrons
Open the PDF for in another window
Study of the ionized cluster beam technique
Frank K. Urban, III; Alfred Bernstein
J. Vac. Sci. Technol. A 9, 537–541 (1991) https://doi.org/10.1116/1.577404
View articletitled, Study of the ionized cluster beam technique
Open the PDF for in another window
Annealing response of disordered sputter deposited vanadium pentoxide (V2O5)
John Luksich; Carolyn Rubin Aita
J. Vac. Sci. Technol. A 9, 542–546 (1991) https://doi.org/10.1116/1.577405
View articletitled, Annealing response of disordered sputter deposited vanadium pentoxide (V<sub>2</sub>O<sub>5</sub>)
Open the PDF for in another window
Structure modification of radio frequency sputtered LaB6 thin films by internal stress
T. Nakano; S. Baba; A. Kobayashi; A. Kinbara; T. Kajiwara; K. Watanabe
J. Vac. Sci. Technol. A 9, 547–549 (1991) https://doi.org/10.1116/1.577406
View articletitled, Structure modification of radio frequency sputtered LaB<sub>6</sub> thin films by internal stress
Open the PDF for in another window
Structure and optical characterization of ZnxCd1−xTe thin films prepared by the close spaced vapor transport method
J. González‐Hernández; O. Zelaya; J. G. Mendoza‐Alverez; E. López‐Cruz; D. A. Pawlik; D. D. Allred
J. Vac. Sci. Technol. A 9, 550–553 (1991) https://doi.org/10.1116/1.577407
View articletitled, Structure and optical characterization of Zn<sub><em>x</em></sub>Cd<sub>1−<em>x</em></sub>Te thin films prepared by the close spaced vapor transport method
Open the PDF for in another window
Determination and observation of electronic defect levels in CuInSe2 crystals and thin films
Fouad A. Abou‐Elfotouh; L. L. Kazmerski; H. R. Moutinho; J. M. Wissel; R. G. Dhere; A. J. Nelson; A. M. Bakry
J. Vac. Sci. Technol. A 9, 554–558 (1991) https://doi.org/10.1116/1.577408
View articletitled, Determination and observation of electronic defect levels in CuInSe<sub>2</sub> crystals and thin films
Open the PDF for in another window
Topography and microstructure of Al films formed under various deposition conditions
C. Y. Chang; R. W. Vook
J. Vac. Sci. Technol. A 9, 559–562 (1991) https://doi.org/10.1116/1.577409
View articletitled, Topography and microstructure of Al films formed under various deposition conditions
Open the PDF for in another window
How is the fractal dimension of a thin film top surface connected with the roughness parameters and anisotropy of this surface?
F. Varnier; A. Llebaria; G. Rasigni
J. Vac. Sci. Technol. A 9, 563–569 (1991) https://doi.org/10.1116/1.577410
View articletitled, How is the fractal dimension of a thin film top surface connected with the roughness parameters and anisotropy of this surface?
Open the PDF for in another window
Chemical nature of the barrier in Pb/YBa2Cu3O7−x tunneling structures
R. P. Vasquez; M. C. Foote; B. D. Hunt; L. Bajuk
J. Vac. Sci. Technol. A 9, 570–573 (1991) https://doi.org/10.1116/1.577411
View articletitled, Chemical nature of the barrier in Pb/YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7−<em>x</em></sub> tunneling structures
Open the PDF for in another window
Transverse Kerr nonreciprocal effects in transmission
V. Warren Biricik
J. Vac. Sci. Technol. A 9, 574–576 (1991) https://doi.org/10.1116/1.577366
View articletitled, Transverse Kerr nonreciprocal effects in transmission
Open the PDF for in another window
Effect of Ge overlayers on the electrical resistance of thin Cr films
K. Schröder; L. Walsh
J. Vac. Sci. Technol. A 9, 577–580 (1991) https://doi.org/10.1116/1.577367
View articletitled, Effect of Ge overlayers on the electrical resistance of thin Cr films
Open the PDF for in another window
Hydrogen storage, microstructural properties of, and electromigration effects in Al/Pd/Al films
A. Domenicucci; R. W. Vook
J. Vac. Sci. Technol. A 9, 581–585 (1991) https://doi.org/10.1116/1.577368
View articletitled, Hydrogen storage, microstructural properties of, and electromigration effects in Al/Pd/Al films
Open the PDF for in another window
Electron emission characteristics of sputtered lanthanum hexaboride
Susan J. Mroczkowski
J. Vac. Sci. Technol. A 9, 586–590 (1991) https://doi.org/10.1116/1.577369
View articletitled, Electron emission characteristics of sputtered lanthanum hexaboride
Open the PDF for in another window
Mass gain of thin films on exposure to air
Edward B. Graper
J. Vac. Sci. Technol. A 9, 591–594 (1991) https://doi.org/10.1116/1.577370
View articletitled, Mass gain of thin films on exposure to air
Open the PDF for in another window
Microstructure of sputter‐deposited Al–Cu–Si films
Hideaki Shimamura; Akira Yajima; Yuji Yoneoka; Shigeru Kobayashi
J. Vac. Sci. Technol. A 9, 595–599 (1991) https://doi.org/10.1116/1.577371
View articletitled, Microstructure of sputter‐deposited Al–Cu–Si films
Open the PDF for in another window
Some experiments that provide direct visualization of reactive sputtering phenomena
J. L. Vossen; S. Krommenhoek; V. A. Koss
J. Vac. Sci. Technol. A 9, 600–603 (1991) https://doi.org/10.1116/1.577372
View articletitled, Some experiments that provide direct visualization of reactive sputtering phenomena
Open the PDF for in another window
Anisotropy of deposition rate in magnetron sputtering of CeO2
Y. Kageyama; Y. Taga
J. Vac. Sci. Technol. A 9, 604–608 (1991) https://doi.org/10.1116/1.577373
View articletitled, Anisotropy of deposition rate in magnetron sputtering of CeO<sub>2</sub>
Open the PDF for in another window
Spatial dependence of composition in ion beam sputter deposited GdTbFe thin films
S. I. Shah; P. F. Carcia
J. Vac. Sci. Technol. A 9, 609–613 (1991) https://doi.org/10.1116/1.577374
View articletitled, Spatial dependence of composition in ion beam sputter deposited GdTbFe thin films
Open the PDF for in another window
Monte Carlo simulations of magnetron sputtering particle transport
A. M. Myers; J. R. Doyle; J. R. Abelson; D. N. Ruzic
J. Vac. Sci. Technol. A 9, 614–618 (1991) https://doi.org/10.1116/1.577375
View articletitled, Monte Carlo simulations of magnetron sputtering particle transport
Open the PDF for in another window
Modeling of multicomponent reactive sputtering
M. Moradi; C. Nender; S. Berg; H‐O. Blom; A. Belkind; Z. Orban
J. Vac. Sci. Technol. A 9, 619–624 (1991) https://doi.org/10.1116/1.577376
View articletitled, Modeling of multicomponent reactive sputtering
Open the PDF for in another window
Controlled ion beam sputter deposition of W/Cu/W layered films for microelectronic applications
O. Auciello; S. Chevacharoenkul; M. S. Ameen; J. Duarte
J. Vac. Sci. Technol. A 9, 625–631 (1991) https://doi.org/10.1116/1.577377
View articletitled, Controlled ion beam sputter deposition of W/Cu/W layered films for microelectronic applications
Open the PDF for in another window
Quantification of microstructural evolution in sputtered a‐Si thin films by real time spectroscopic ellipsometry
Ilsin An; H. V. Nguyen; N. V. Nguyen; R. W. Collins
J. Vac. Sci. Technol. A 9, 632–637 (1991) https://doi.org/10.1116/1.577378
View articletitled, Quantification of microstructural evolution in sputtered <em>a</em>‐Si thin films by real time spectroscopic ellipsometry
Open the PDF for in another window
In situ chemical analysis in thin film production using soft x‐ray emission spectroscopy
M. Georgson; G. Bray; Y. Claesson; J. Nordgren; C.‐G. Ribbing; N. Wassdahl
J. Vac. Sci. Technol. A 9, 638–645 (1991) https://doi.org/10.1116/1.577379
View articletitled, <em>I</em><em>n</em> <em>s</em><em>i</em><em>t</em><em>u</em> chemical analysis in thin film production using soft x‐ray emission spectroscopy
Open the PDF for in another window
Ion channeling study of nickel metal growth on Ge(111) at room temperature
G. A. Smith; Li Luo; W. M. Gibson
J. Vac. Sci. Technol. A 9, 646–648 (1991) https://doi.org/10.1116/1.577380
View articletitled, Ion channeling study of nickel metal growth on Ge(111) at room temperature
Open the PDF for in another window
Perfluoroalkylether reactions on iron and oxygen covered iron surfaces studied using x‐ray photoelectron spectroscopy and secondary ion mass spectrometry
Mary E. Napier; Peter C. Stair
J. Vac. Sci. Technol. A 9, 649–652 (1991) https://doi.org/10.1116/1.577381
View articletitled, Perfluoroalkylether reactions on iron and oxygen covered iron surfaces studied using x‐ray photoelectron spectroscopy and secondary ion mass spectrometry
Open the PDF for in another window
Tungsten film deposition by hydrogen atom reaction with WF6
Wei William Lee; Robert R. Reeves; Judith Halstead
J. Vac. Sci. Technol. A 9, 653–655 (1991) https://doi.org/10.1116/1.577382
View articletitled, Tungsten film deposition by hydrogen atom reaction with WF<sub>6</sub>
Open the PDF for in another window
Dimerization and adsorption of Si on the Si(100) surface
J. Gryko; R. E. Allen
J. Vac. Sci. Technol. A 9, 656–658 (1991) https://doi.org/10.1116/1.577383
View articletitled, Dimerization and adsorption of Si on the Si(100) surface
Open the PDF for in another window
The reaction of oxygen with the hot W(001) surface studied by low‐energy electron microscopy
M. S. Altman; E. Bauer
J. Vac. Sci. Technol. A 9, 659–660 (1991) https://doi.org/10.1116/1.577384
View articletitled, The reaction of oxygen with the hot W(001) surface studied by low‐energy electron microscopy
Open the PDF for in another window
Plasma diffusion from a low pressure radio frequency source
C. Charles; R. W. Boswell; A. Bouchoule; C. Laure; P. Ranson
J. Vac. Sci. Technol. A 9, 661–663 (1991) https://doi.org/10.1116/1.577385
View articletitled, Plasma diffusion from a low pressure radio frequency source
Open the PDF for in another window
Use of light scattering in characterizing reactively ion etched profiles
Konstantinos P. Giapis; Richard A. Gottscho; Linda A. Clark; Joseph B. Kruskal; Diane Lambert; Avi Kornblit; Dino Sinatore
J. Vac. Sci. Technol. A 9, 664–668 (1991) https://doi.org/10.1116/1.577386
View articletitled, Use of light scattering in characterizing reactively ion etched profiles
Open the PDF for in another window
Vibrational excitation processes in molecular discharges
James A. O’Neill
J. Vac. Sci. Technol. A 9, 669–674 (1991) https://doi.org/10.1116/1.577387
View articletitled, Vibrational excitation processes in molecular discharges
Open the PDF for in another window
Time‐resolved measurements of electron and ion densities in low‐frequency discharges by high‐frequency impedance analysis
B. E. Thompson; A. Utagikar; P. Avona
J. Vac. Sci. Technol. A 9, 675–681 (1991) https://doi.org/10.1116/1.577388
View articletitled, Time‐resolved measurements of electron and ion densities in low‐frequency discharges by high‐frequency impedance analysis
Open the PDF for in another window
Energy distribution measurements in radio frequency plasma discharges using a cubical analyzer
Phi Long Nguyen; R. B. Turkot, Jr.; D. N. Ruzic
J. Vac. Sci. Technol. A 9, 682–687 (1991) https://doi.org/10.1116/1.577343
View articletitled, Energy distribution measurements in radio frequency plasma discharges using a cubical analyzer
Open the PDF for in another window
Observation of two‐temperature electrons in a sputtering magnetron plasma
T. E. Sheridan; M. J. Goeckner; J. Goree
J. Vac. Sci. Technol. A 9, 688–690 (1991) https://doi.org/10.1116/1.577344
View articletitled, Observation of two‐temperature electrons in a sputtering magnetron plasma
Open the PDF for in another window
Ion extraction from microwave plasma excited by ordinary and extraordinary waves and applications to the sputtering deposition
Morito Matsuoka; Ken’ichi Ono
J. Vac. Sci. Technol. A 9, 691–695 (1991) https://doi.org/10.1116/1.577345
View articletitled, Ion extraction from microwave plasma excited by ordinary and extraordinary waves and applications to the sputtering deposition
Open the PDF for in another window
Optimized microwave coupling in an electron cyclotron resonance etch tool
J. E. Stevens; J. L. Cecchi; Y. C. Huang; R. L. Jarecki, Jr.
J. Vac. Sci. Technol. A 9, 696–701 (1991) https://doi.org/10.1116/1.577346
View articletitled, Optimized microwave coupling in an electron cyclotron resonance etch tool
Open the PDF for in another window
The effects of substrate potentials on electron cyclotron resonance plasmas
S. M. Rossnagel; K. Schatz; S. J. Whitehair; R. C. Guarnieri; D. N. Ruzic; J. J. Cuomo
J. Vac. Sci. Technol. A 9, 702–706 (1991) https://doi.org/10.1116/1.577347
View articletitled, The effects of substrate potentials on electron cyclotron resonance plasmas
Open the PDF for in another window
Compact electron cyclotron resonance ion source with high density plasma
Masaru Shimada; Iwao Watanabe; Yasuhiro Torii
J. Vac. Sci. Technol. A 9, 707–710 (1991) https://doi.org/10.1116/1.577348
View articletitled, Compact electron cyclotron resonance ion source with high density plasma
Open the PDF for in another window
Effects of magnetic field and microwave power on electron cyclotron resonance‐type plasma characteristics
Oleg A. Popov
J. Vac. Sci. Technol. A 9, 711–716 (1991) https://doi.org/10.1116/1.577349
View articletitled, Effects of magnetic field and microwave power on electron cyclotron resonance‐type plasma characteristics
Open the PDF for in another window
Characterization of electron cyclotron resonance hydrogen plasmas
C. A. Outten; J. C. Barbour; W. R. Wampler
J. Vac. Sci. Technol. A 9, 717–721 (1991) https://doi.org/10.1116/1.577350
View articletitled, Characterization of electron cyclotron resonance hydrogen plasmas
Open the PDF for in another window
Electrical and optical measurements of electron cyclotron resonance discharges in Cl2 and Ar
Tatsuo Oomori; Mutumi Tuda; Hiroki Ootera; Kouichi Ono
J. Vac. Sci. Technol. A 9, 722–726 (1991) https://doi.org/10.1116/1.577351
View articletitled, Electrical and optical measurements of electron cyclotron resonance discharges in Cl<sub>2</sub> and Ar
Open the PDF for in another window
H‐isotope retention and thermal/ion‐induced release in boronized films for the Tokamak Fusion Test Reactor
D. S. Walsh; B. L. Doyle; W. R. Wampler; A. K. Hays
J. Vac. Sci. Technol. A 9, 727–732 (1991) https://doi.org/10.1116/1.577352
View articletitled, H‐isotope retention and thermal/ion‐induced release in boronized films for the Tokamak Fusion Test Reactor
Open the PDF for in another window
Observation of helium gas discharge cleaning process for deuterium saturated graphite by A–U gauge
K. Akaishi; S. Watanabe; Y. Kubota; Y. Funato
J. Vac. Sci. Technol. A 9, 733–736 (1991) https://doi.org/10.1116/1.577353
View articletitled, Observation of helium gas discharge cleaning process for deuterium saturated graphite by A–U gauge
Open the PDF for in another window
Absolute calibration of a frozen hydrogen pellet mass detector
R. A. Langley; A. L. Qualls; J. B. Wilgen
J. Vac. Sci. Technol. A 9, 737–741 (1991) https://doi.org/10.1116/1.577354
View articletitled, Absolute calibration of a frozen hydrogen pellet mass detector
Open the PDF for in another window
The effect of limiter conditioning on the Tokamak Fusion Test Reactor edge plasma
S. J. Kilpatrick; C. S. Pitcher; H. F. Dylla; D. M. Manos; I. Nyberg; A. T. Ramsey; B. C. Stratton; J. Timberlake; M. J. Ulrickson
J. Vac. Sci. Technol. A 9, 742–746 (1991) https://doi.org/10.1116/1.577355
View articletitled, The effect of limiter conditioning on the Tokamak Fusion Test Reactor edge plasma
Open the PDF for in another window
Chemical release of implanted deuterium in graphite
S. Chiu; A. A. Haasz
J. Vac. Sci. Technol. A 9, 747–752 (1991) https://doi.org/10.1116/1.577356
View articletitled, Chemical release of implanted deuterium in graphite
Open the PDF for in another window
The role of surface microstructure in the sputtering of graphite
D. L. Youchison; M. D. Nahemow; R. T. McGrath; A. J. Baratta
J. Vac. Sci. Technol. A 9, 753–758 (1991) https://doi.org/10.1116/1.577357
View articletitled, The role of surface microstructure in the sputtering of graphite
Open the PDF for in another window
The influence of low‐energy particle–surface interactions on the initial stages of thin film formation
C. A. Stone; N. M. Ghoniem
J. Vac. Sci. Technol. A 9, 759–767 (1991) https://doi.org/10.1116/1.577358
View articletitled, The influence of low‐energy particle–surface interactions on the initial stages of thin film formation
Open the PDF for in another window
Studies of the reactive ion etching of SiGe alloys
G. S. Oehrlein; G. M. W. Kroesen; E. de Frésart; Y. Zhang; T. D. Bestwick
J. Vac. Sci. Technol. A 9, 768–774 (1991) https://doi.org/10.1116/1.577359
View articletitled, Studies of the reactive ion etching of SiGe alloys
Open the PDF for in another window
Etch mechanism in the reactive ion etching of silicon nitride
J. Dulak; B. J. Howard; Ch. Steinbrüchel
J. Vac. Sci. Technol. A 9, 775–778 (1991) https://doi.org/10.1116/1.577360
View articletitled, Etch mechanism in the reactive ion etching of silicon nitride
Open the PDF for in another window
Quantification of surface film formation effects in fluorocarbon plasma etching of polysilicon
David C. Gray; Herbert H. Sawin; Jeffrey W. Butterbaugh
J. Vac. Sci. Technol. A 9, 779–785 (1991) https://doi.org/10.1116/1.577361
View articletitled, Quantification of surface film formation effects in fluorocarbon plasma etching of polysilicon
Open the PDF for in another window
Etching behavior of an epoxy film in O2/CF4 plasmas
F. Emmi; F. D. Egitto; L. J. Matienzo
J. Vac. Sci. Technol. A 9, 786–789 (1991) https://doi.org/10.1116/1.577362
View articletitled, Etching behavior of an epoxy film in O<sub>2</sub>/CF<sub>4</sub> plasmas
Open the PDF for in another window
Polyimide etching in Ar, O2, and O2/F2 gas mixtures: Effect of ion energy
I. Tepermeister; H. Sawin
J. Vac. Sci. Technol. A 9, 790–795 (1991) https://doi.org/10.1116/1.577363
View articletitled, Polyimide etching in Ar, O<sub>2</sub>, and O<sub>2</sub>/F<sub>2</sub> gas mixtures: Effect of ion energy
Open the PDF for in another window
Low‐temperature dry etching
Shinichi Tachi; Kazunori Tsujimoto; Shin Arai; Tokuo Kure
J. Vac. Sci. Technol. A 9, 796–803 (1991) https://doi.org/10.1116/1.577364
View articletitled, Low‐temperature dry etching
Open the PDF for in another window
Vacuum ultraviolet radiation damage in electron cyclotron resonance and reactive ion etch plasmas
D. A. Buchanan; G. Fortuño‐Wiltshire
J. Vac. Sci. Technol. A 9, 804–809 (1991) https://doi.org/10.1116/1.577365
View articletitled, Vacuum ultraviolet radiation damage in electron cyclotron resonance and reactive ion etch plasmas
Open the PDF for in another window
Ion beam etching of GaAs and GaAs/AlGaAs heterostructures probed in real time by spectroscopic ellipsometry
A. R. Heyd; Ilsin An; R. W. Collins; Yue Cong; K. Vedam; S. S. Bose; D. L. Miller
J. Vac. Sci. Technol. A 9, 810–815 (1991) https://doi.org/10.1116/1.577320
View articletitled, Ion beam etching of GaAs and GaAs/AlGaAs heterostructures probed in real time by spectroscopic ellipsometry
Open the PDF for in another window
Radio frequency plasma etching of Si/SiO2 by Cl2/O2: Improvements resulting from the time modulation of the processing gases
S. C. McNevin
J. Vac. Sci. Technol. A 9, 816–819 (1991) https://doi.org/10.1116/1.577321
View articletitled, Radio frequency plasma etching of Si/SiO<sub>2</sub> by Cl<sub>2</sub>/O<sub>2</sub>: Improvements resulting from the time modulation of the processing gases
Open the PDF for in another window
A novel technique to make foam shells with high sphericity and wall uniformity for cryogenic laser fusion targets
M. Takagi; T. Norimatsu; T. Yamanaka; S. Nakai; H. Ito
J. Vac. Sci. Technol. A 9, 820–823 (1991) https://doi.org/10.1116/1.577322
View articletitled, A novel technique to make foam shells with high sphericity and wall uniformity for cryogenic laser fusion targets
Open the PDF for in another window
The deposition of oxygen containing plasma polymers for use as permeation barrier coatings
R. L. Crawley; J. L. Evans
J. Vac. Sci. Technol. A 9, 824–830 (1991) https://doi.org/10.1116/1.577323
View articletitled, The deposition of oxygen containing plasma polymers for use as permeation barrier coatings
Open the PDF for in another window
Sandwich holography modeling study of solid deuterium–tritium layers
D. N. Bittner; M. D. Shane; D. L. Musinski
J. Vac. Sci. Technol. A 9, 831–834 (1991) https://doi.org/10.1116/1.577324
View articletitled, Sandwich holography modeling study of solid deuterium–tritium layers
Open the PDF for in another window
A fuel pellet injector for the microwave tokamak experiment
S. M. Hibbs; S. L. Allen; D. E. Petersen; N. R. Sewall
J. Vac. Sci. Technol. A 9, 835–841 (1991) https://doi.org/10.1116/1.577325
View articletitled, A fuel pellet injector for the microwave tokamak experiment
Open the PDF for in another window
A general method for the stability analysis of a uniform liquid fuel layer inside a spherical shell inertial confinement fusion target
R. D. Todd; E. M. Simpson; K. Kim; T. P. Bernat
J. Vac. Sci. Technol. A 9, 842–847 (1991) https://doi.org/10.1116/1.577326
View articletitled, A general method for the stability analysis of a uniform liquid fuel layer inside a spherical shell inertial confinement fusion target
Open the PDF for in another window
Effects of wall conditioning on plasma performance in the Advanced Toroidal Facility stellarator
R. A. Langley; E. C. Crume, Jr.; J. C. Glowienka; L. D. Horton; R. C. Isler; M. Murakami; J. E. Simpkins
J. Vac. Sci. Technol. A 9, 848–851 (1991) https://doi.org/10.1116/1.577327
View articletitled, Effects of wall conditioning on plasma performance in the Advanced Toroidal Facility stellarator
Open the PDF for in another window
Photoemission investigation of compound semiconductor monodisperse clusters
J. G. Tobin; V. L. Colvin; A. P. Alivisatos
J. Vac. Sci. Technol. A 9, 852–853 (1991) https://doi.org/10.1116/1.577328
View articletitled, Photoemission investigation of compound semiconductor monodisperse clusters
Open the PDF for in another window
The origins and elimination of oval defects in GaAs layers grown by molecular beam epitaxy
Kazue Takahashi; Hiroki Kawada; Shinjiro Ueda; Muneo Furuse; Shigeru Shirayone
J. Vac. Sci. Technol. A 9, 854–857 (1991) https://doi.org/10.1116/1.577329
View articletitled, The origins and elimination of oval defects in GaAs layers grown by molecular beam epitaxy
Open the PDF for in another window
Low temperature processing and characterization of metastable anisotype heterojunction‐gate strained‐layer field‐effect transistors
C. L. Lin; H. H. Wieder
J. Vac. Sci. Technol. A 9, 858–862 (1991) https://doi.org/10.1116/1.577330
View articletitled, Low temperature processing and characterization of metastable anisotype heterojunction‐gate strained‐layer field‐effect transistors
Open the PDF for in another window
Modeling and performance characteristics of GaAs quantum well infrared detector structures
D. D. Coon; K. M. S. V. Bandara; Byungsung O; J.‐W. Choe; M. H. Francombe; Y. F. Lin; W. J. Takei
J. Vac. Sci. Technol. A 9, 863–869 (1991) https://doi.org/10.1116/1.577331
View articletitled, Modeling and performance characteristics of GaAs quantum well infrared detector structures
Open the PDF for in another window
Real‐time optical diagnostics for epitaxial growth
D. E. Aspnes; W. E. Quinn; S. Gregory
J. Vac. Sci. Technol. A 9, 870–875 (1991) https://doi.org/10.1116/1.577332
View articletitled, Real‐time optical diagnostics for epitaxial growth
Open the PDF for in another window
Diffusion of Si atoms and dimers on Si(100)
Z.‐H. Huang; R. E. Allen
J. Vac. Sci. Technol. A 9, 876–879 (1991) https://doi.org/10.1116/1.577333
View articletitled, Diffusion of Si atoms and dimers on Si(100)
Open the PDF for in another window
Factors affecting the formation, uniformity, and density of misfit and threading dislocation arrays during heteroepitaxial growth
A. Rockett; C. J. Kiely
J. Vac. Sci. Technol. A 9, 880–884 (1991) https://doi.org/10.1116/1.577334
View articletitled, Factors affecting the formation, uniformity, and density of misfit and threading dislocation arrays during heteroepitaxial growth
Open the PDF for in another window
Ballistic electron emission spectroscopy of noble metal–GaP(110) interfaces
R. Ludeke; M. Prietsch
J. Vac. Sci. Technol. A 9, 885–890 (1991) https://doi.org/10.1116/1.577335
View articletitled, Ballistic electron emission spectroscopy of noble metal–GaP(110) interfaces
Open the PDF for in another window
Surface photovoltage effects in photoemission from metal/GaP(110) interfaces: Temperature‐dependent Fermi level movement
M. Alonso; R. Cimino; K. Horn
J. Vac. Sci. Technol. A 9, 891–897 (1991) https://doi.org/10.1116/1.577336
View articletitled, Surface photovoltage effects in photoemission from metal/GaP(110) interfaces: Temperature‐dependent Fermi level movement
Open the PDF for in another window
Coverage dependent surface photovoltage induced by synchrotron radiation at metal/GaAs interfaces
D. Mao; A. Kahn; M. Marsi; G. Margaritondo
J. Vac. Sci. Technol. A 9, 898–901 (1991) https://doi.org/10.1116/1.577337
View articletitled, Coverage dependent surface photovoltage induced by synchrotron radiation at metal/GaAs interfaces
Open the PDF for in another window
Correlation of interface chemistry, barrier height, and step density for Al on vicinal GaAs(100) surfaces
S. Chang; I. M. Vitomirov; L. J. Brillson; D. F. Rioux; P. D. Kirchner; G. D. Pettit; J. M. Woodall
J. Vac. Sci. Technol. A 9, 902–906 (1991) https://doi.org/10.1116/1.577338
View articletitled, Correlation of interface chemistry, barrier height, and step density for Al on vicinal GaAs(100) surfaces
Open the PDF for in another window
X‐ray absorption fine structure studies of buried Ge–Si interfaces
P. Aebi; T. Tyliszczak; A. P. Hitchcock; T. E. Jackman; J‐M. Baribeau
J. Vac. Sci. Technol. A 9, 907–911 (1991) https://doi.org/10.1116/1.577339
View articletitled, X‐ray absorption fine structure studies of buried Ge–Si interfaces
Open the PDF for in another window
Electronic and vibrational properties of semiconducting crystalline FeSi2 layers grown on Si(111)
Angela Rizzi; Heiko Moritz; Hans Lüth
J. Vac. Sci. Technol. A 9, 912–916 (1991) https://doi.org/10.1116/1.577340
View articletitled, Electronic and vibrational properties of semiconducting crystalline FeSi<sub>2</sub> layers grown on Si(111)
Open the PDF for in another window
Control of Ge homojunction band offsets via ultrathin Ga–As dipole layers
J. T. McKinley; Y. Hwu; B. E. C. Koltenbah; G. Margaritondo; S. Baroni; R. Resta
J. Vac. Sci. Technol. A 9, 917–921 (1991) https://doi.org/10.1116/1.577341
View articletitled, Control of Ge homojunction band offsets via ultrathin Ga–As dipole layers
Open the PDF for in another window
Comparative study of the oxide growth mode on GaAs(111) and (1̄1̄1̄) surfaces: Implications for direct oxide electron beam writing
M. Alonso; F. Soria; M. L. González
J. Vac. Sci. Technol. A 9, 922–930 (1991) https://doi.org/10.1116/1.577342
View articletitled, Comparative study of the oxide growth mode on GaAs(111) and (1̄1̄1̄) surfaces: Implications for direct oxide electron beam writing
Open the PDF for in another window
Synchrotron‐radiation‐stimulated tungsten deposition on silicon from W(CO)6
R. Zanoni; M. N. Piancastelli; M. Marsi; G. Margaritondo
J. Vac. Sci. Technol. A 9, 931–934 (1991) https://doi.org/10.1116/1.577551
View articletitled, Synchrotron‐radiation‐stimulated tungsten deposition on silicon from W(CO)<sub>6</sub>
Open the PDF for in another window
Magnetron enhanced etching of GaAs
G. F. McLane; M. Meyyappan; H. Lee; W. Buckwald
J. Vac. Sci. Technol. A 9, 935–938 (1991) https://doi.org/10.1116/1.577550
View articletitled, Magnetron enhanced etching of GaAs
Open the PDF for in another window
Initial stages of heterojunction formation: Si on GaAs(100)
F. J. Palomares; M. A. Méndez; M. T. Cuberes; F. Soria
J. Vac. Sci. Technol. A 9, 939–943 (1991) https://doi.org/10.1116/1.577552
View articletitled, Initial stages of heterojunction formation: Si on GaAs(100)
Open the PDF for in another window
Regrowth of GaAs at the Au–Ge–Ga/GaAs interface under an As flux
Baoqi Li; Paul H. Holloway
J. Vac. Sci. Technol. A 9, 944–948 (1991) https://doi.org/10.1116/1.577553
View articletitled, Regrowth of GaAs at the Au–Ge–Ga/GaAs interface under an As flux
Open the PDF for in another window
Determination of the carrier concentration of doped ZnSe from infrared measurements
A. Deneuville; D. B. Tanner; R. M. Park; P. H. Holloway
J. Vac. Sci. Technol. A 9, 949–953 (1991) https://doi.org/10.1116/1.577554
View articletitled, Determination of the carrier concentration of doped ZnSe from infrared measurements
Open the PDF for in another window
X‐ray characterization of (Zn,Cd)Te/CdTe strained layer superlattices
Syed B. Qadri
J. Vac. Sci. Technol. A 9, 954–956 (1991) https://doi.org/10.1116/1.577555
View articletitled, X‐ray characterization of (Zn,Cd)Te/CdTe strained layer superlattices
Open the PDF for in another window
The interaction of ion implantation with photoresist ashing: A statistical experimental design study
Jerry A. Stefani; Lee M. Loewenstein; Christopher Michael
J. Vac. Sci. Technol. A 9, 957–965 (1991) https://doi.org/10.1116/1.577556
View articletitled, The interaction of ion implantation with photoresist ashing: A statistical experimental design study
Open the PDF for in another window
Au interfaces with epitaxially grown CdTe(111): Chemistry and barrier heights
I. M. Vitomirov; S. Chang; L. J. Brillson; D. F. Rioux; S. Sivananthan; J. P. Faurie
J. Vac. Sci. Technol. A 9, 966–971 (1991) https://doi.org/10.1116/1.577557
View articletitled, Au interfaces with epitaxially grown CdTe(111): Chemistry and barrier heights
Open the PDF for in another window
Free energy model for the analysis of bonding in a‐SixNyHz alloys
Z. Yin; F. W. Smith
J. Vac. Sci. Technol. A 9, 972–977 (1991) https://doi.org/10.1116/1.577558
View articletitled, Free energy model for the analysis of bonding in <em>a</em>‐Si<sub><em>x</em></sub>N<sub><em>y</em></sub>H<sub><em>z</em></sub> alloys
Open the PDF for in another window
Formation and Schottky barrier height of Au contacts to CuInSe2
Art J. Nelson; Steven Gebhard; L. L. Kazmerski; Elio Colavita; Mike Engelhardt; Hartmut Höchst
J. Vac. Sci. Technol. A 9, 978–982 (1991) https://doi.org/10.1116/1.577559
View articletitled, Formation and Schottky barrier height of Au contacts to CuInSe<sub>2</sub>
Open the PDF for in another window
Photoluminescence and surface photovoltaic spectra of strained InP on GaAs
Weihua Zhuang; Chao Chen; Da Teng; Jin Yu; Yuzhang Li
J. Vac. Sci. Technol. A 9, 983–986 (1991) https://doi.org/10.1116/1.577560
View articletitled, Photoluminescence and surface photovoltaic spectra of strained InP on GaAs
Open the PDF for in another window
Internal photoemission in CoGa/GaAs Schottky barriers, possible injection of electrons into the L valley
R. Arghavani; R. P. G. Karunasiri; T. C. Kuo; Y. K. Kim; K. L. Wang
J. Vac. Sci. Technol. A 9, 987–989 (1991) https://doi.org/10.1116/1.577561
View articletitled, Internal photoemission in CoGa/GaAs Schottky barriers, possible injection of electrons into the <em>L</em> valley
Open the PDF for in another window
Photoemission study of the annealed Pd/GaAs(110) interface
T. Kendelewicz; K. E. Miyano; P. L. Meissner; R. Cao; W. E. Spicer
J. Vac. Sci. Technol. A 9, 990–993 (1991) https://doi.org/10.1116/1.577562
View articletitled, Photoemission study of the annealed Pd/GaAs(110) interface
Open the PDF for in another window
Studies on type‐inversion of sulfide‐treated p‐InP
W. M. Lau; S. Jin; X.‐W. Wu; S. Ingrey
J. Vac. Sci. Technol. A 9, 994–997 (1991) https://doi.org/10.1116/1.577563
View articletitled, Studies on type‐inversion of sulfide‐treated <em>p</em>‐InP
Open the PDF for in another window
Cerium silicide formation in thin Ce–Si multilayer films
C. C. Hsu; J. Ho; J. J. Qian; Y. T. Wang
J. Vac. Sci. Technol. A 9, 998–1001 (1991) https://doi.org/10.1116/1.577298
View articletitled, Cerium silicide formation in thin Ce–Si multilayer films
Open the PDF for in another window
The chemical vapor deposition of SiO2 from tetraethoxysilane: The effect of the surface hydroxyl concentration
Laura L. Tedder; John E. Crowell; Mark A. Logan
J. Vac. Sci. Technol. A 9, 1002–1006 (1991) https://doi.org/10.1116/1.577566
View articletitled, The chemical vapor deposition of SiO<sub>2</sub> from tetraethoxysilane: The effect of the surface hydroxyl concentration
Open the PDF for in another window
Low‐energy electron microscopy of semiconductor surfaces
E. Bauer; M. Mundschau; W. Swiech; W. Telieps
J. Vac. Sci. Technol. A 9, 1007–1013 (1991) https://doi.org/10.1116/1.577567
View articletitled, Low‐energy electron microscopy of semiconductor surfaces
Open the PDF for in another window
Scanning tunneling microscopy of one‐dimensional periodic corrugated silicon surfaces
C. C. Umbach; M. E. Keeffe; J. M. Blakely
J. Vac. Sci. Technol. A 9, 1014–1019 (1991) https://doi.org/10.1116/1.577568
View articletitled, Scanning tunneling microscopy of one‐dimensional periodic corrugated silicon surfaces
Open the PDF for in another window
Silicon (2p) surface core‐level line shape of Si(111)–B
J. E. Rowe; G. K. Wertheim; D. M. Riffe
J. Vac. Sci. Technol. A 9, 1020–1025 (1991) https://doi.org/10.1116/1.577569
View articletitled, Silicon (2<em>p</em>) surface core‐level line shape of Si(111)–B
Open the PDF for in another window
Clean and oxygen covered InP(110) surfaces differential reflectivity
A. Cricenti; S. Selci; A. C. Felici; L. Ferrari; A. Gavrilovich; C. Goletti; G. Chiarotti
J. Vac. Sci. Technol. A 9, 1026–1028 (1991) https://doi.org/10.1116/1.577570
View articletitled, Clean and oxygen covered InP(110) surfaces differential reflectivity
Open the PDF for in another window
The thermal oxidation of AlGaAs
J. Shin; K. M. Geib; C. W. Wilmsen; P. Chu; H. H. Wieder
J. Vac. Sci. Technol. A 9, 1029–1034 (1991) https://doi.org/10.1116/1.577571
View articletitled, The thermal oxidation of AlGaAs
Open the PDF for in another window
Ion beam oxidation of GaAs: The role of ion energy
O. Vancauwenberghe; N. Herbots; H. Manoharan; M. Ahrens
J. Vac. Sci. Technol. A 9, 1035–1039 (1991) https://doi.org/10.1116/1.577572
View articletitled, Ion beam oxidation of GaAs: The role of ion energy
Open the PDF for in another window
GaAs surface oxidation and deoxidation using electron cyclotron resonance oxygen and hydrogen plasmas
Z. Lu; M. T. Schmidt; R. M. Osgood, Jr.; W. M. Holber; D. V. Podlesnik
J. Vac. Sci. Technol. A 9, 1040–1044 (1991) https://doi.org/10.1116/1.577573
View articletitled, GaAs surface oxidation and deoxidation using electron cyclotron resonance oxygen and hydrogen plasmas
Open the PDF for in another window
Surface mechanisms in aluminum chemical vapor deposition
David A. Mantell
J. Vac. Sci. Technol. A 9, 1045–1050 (1991) https://doi.org/10.1116/1.577574
View articletitled, Surface mechanisms in aluminum chemical vapor deposition
Open the PDF for in another window
Thin‐film deposition in the afterglows of N2 and H2 microwave plasmas
Scott Meikle; Yoichiro Nakanishi; Yoshinori Hatanaka
J. Vac. Sci. Technol. A 9, 1051–1054 (1991) https://doi.org/10.1116/1.577575
View articletitled, Thin‐film deposition in the afterglows of N<sub>2</sub> and H<sub>2</sub> microwave plasmas
Open the PDF for in another window
Plasma jet dry etching using different electrode configurations
A. M. Barklund; H.‐O. Blom; S. Berg
J. Vac. Sci. Technol. A 9, 1055–1057 (1991) https://doi.org/10.1116/1.577576
View articletitled, Plasma jet dry etching using different electrode configurations
Open the PDF for in another window
Surface etching and roughening in integrated processing of thermal oxides
M. Offenberg; M. Liehr; G. W. Rubloff
J. Vac. Sci. Technol. A 9, 1058–1065 (1991) https://doi.org/10.1116/1.577577
View articletitled, Surface etching and roughening in integrated processing of thermal oxides
Open the PDF for in another window
Process compatibility in integrated processing of semiconductor devices in multichamber systems
G. Lucovsky; S. S. Kim; J. T. Fitch; Cheng Wang; R. A. Rudder; G. G. Fountain; S. V. Hattangady; R. J. Markunas
J. Vac. Sci. Technol. A 9, 1066–1072 (1991) https://doi.org/10.1116/1.577578
View articletitled, Process compatibility in integrated processing of semiconductor devices in multichamber systems
Open the PDF for in another window
In situ native oxide clean followed by chemical vapor deposition of tungsten silicide on polysilicon in a cluster tool
Ronald S. Nowicki; Patrice Geraghty; David Harris; Gayle Lux; David J. Johnson
J. Vac. Sci. Technol. A 9, 1073–1082 (1991) https://doi.org/10.1116/1.577579
View articletitled, <em>I</em><em>n</em> <em>s</em><em>i</em><em>t</em><em>u</em> native oxide clean followed by chemical vapor deposition of tungsten silicide on polysilicon in a cluster tool
Open the PDF for in another window
Monte Carlo low pressure deposition profile simulations
Juan C. Rey; Lie‐Yea Cheng; James P. McVittie; Krishna C. Saraswat
J. Vac. Sci. Technol. A 9, 1083–1087 (1991) https://doi.org/10.1116/1.577580
View articletitled, Monte Carlo low pressure deposition profile simulations
Open the PDF for in another window
Helium plasma enhanced chemical vapor deposited oxides and nitrides: Process mechanisms and applications in advanced device structures
A. A. Bright
J. Vac. Sci. Technol. A 9, 1088–1093 (1991) https://doi.org/10.1116/1.577581
View articletitled, Helium plasma enhanced chemical vapor deposited oxides and nitrides: Process mechanisms and applications in advanced device structures
Open the PDF for in another window
Low‐temperature (300 °C) stacked oxide–nitride–oxide gate dielectrics with remote plasma‐enhanced chemical vapor deposition
S. V. Hattangady; G. G. Fountain; R. G. Alley; R. A. Rudder; R. J. Markunas
J. Vac. Sci. Technol. A 9, 1094–1098 (1991) https://doi.org/10.1116/1.577582
View articletitled, Low‐temperature (300 °C) stacked oxide–nitride–oxide gate dielectrics with remote plasma‐enhanced chemical vapor deposition
Open the PDF for in another window
Hot filament activated chemical vapor deposition of boron nitride
Robert R. Rye
J. Vac. Sci. Technol. A 9, 1099–1103 (1991) https://doi.org/10.1116/1.577583
View articletitled, Hot filament activated chemical vapor deposition of boron nitride
Open the PDF for in another window
Stresses in multilayer combinations of sputter deposited coatings of Ni, Ti, TiC+Ni, and TiB2+Ni on carbon steel substrates
D. L. Chambers; K. A. Taylor; C. T. Wan; G. T. Susi
J. Vac. Sci. Technol. A 9, 1104–1108 (1991) https://doi.org/10.1116/1.577584
View articletitled, Stresses in multilayer combinations of sputter deposited coatings of Ni, Ti, TiC+Ni, and TiB<sub>2</sub>+Ni on carbon steel substrates
Open the PDF for in another window
Process optimization and scale‐up of a rapid thermal processing system using design of experiments
Rajiv Rastogi
J. Vac. Sci. Technol. A 9, 1109–1112 (1991) https://doi.org/10.1116/1.577585
View articletitled, Process optimization and scale‐up of a rapid thermal processing system using design of experiments
Open the PDF for in another window
Sputter deposition of precision Si/Si3N4 Bragg reflectors using multitasking interactive processing control
D. I. Babic; J. J. Dudley; M. Shirazi; E. L. Hu; J. E. Bowers
J. Vac. Sci. Technol. A 9, 1113–1117 (1991) https://doi.org/10.1116/1.577586
View articletitled, Sputter deposition of precision Si/Si<sub>3</sub>N<sub>4</sub> Bragg reflectors using multitasking interactive processing control
Open the PDF for in another window
Large‐area sputtering of in situ superconducting YBa2Cu3O7 films
P. H. Ballentine; J. P. Allen; A. M. Kadin; D. S. Mallory
J. Vac. Sci. Technol. A 9, 1118–1122 (1991) https://doi.org/10.1116/1.577587
View articletitled, Large‐area sputtering of <em>i</em><em>n</em> <em>s</em><em>i</em><em>t</em><em>u</em> superconducting YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7</sub> films
Open the PDF for in another window
Characterization of ion beam‐induced surface modification of diamond films by real time spectroscopic ellipsometry
Yue Cong; R. W. Collins; R. Messier; K. Vedam; Glenn F. Epps; H. Windischmann
J. Vac. Sci. Technol. A 9, 1123–1128 (1991) https://doi.org/10.1116/1.577588
View articletitled, Characterization of ion beam‐induced surface modification of diamond films by real time spectroscopic ellipsometry
Open the PDF for in another window
The effect of radio frequency substrate biasing in the deposition of diamond‐like carbon films in an electron cyclotron resonance discharge
P. W. Pastel; W. J. Varhue
J. Vac. Sci. Technol. A 9, 1129–1133 (1991) https://doi.org/10.1116/1.577589
View articletitled, The effect of radio frequency substrate biasing in the deposition of diamond‐like carbon films in an electron cyclotron resonance discharge
Open the PDF for in another window
Effect of oxygen on filament activity in diamond chemical vapor deposition
M. Sommer; F. W. Smith
J. Vac. Sci. Technol. A 9, 1134–1139 (1991) https://doi.org/10.1116/1.577590
View articletitled, Effect of oxygen on filament activity in diamond chemical vapor deposition
Open the PDF for in another window
X‐ray absorption study of diamond films grown by chemical vapor deposition
X.‐Q. Yang; M. W. Ruckman; T. A. Skotheim; M. den Boer; Yu Zheng; A. R. Badzian; T. Badzian; R. Messier; A. R. Srivatsa
J. Vac. Sci. Technol. A 9, 1140–1144 (1991) https://doi.org/10.1116/1.577591
View articletitled, X‐ray absorption study of diamond films grown by chemical vapor deposition
Open the PDF for in another window
Current research problems and opportunities in the vapor phase synthesis of diamond and cubic boron nitride
W. A. Yarbrough
J. Vac. Sci. Technol. A 9, 1145–1152 (1991) https://doi.org/10.1116/1.577592
View articletitled, Current research problems and opportunities in the vapor phase synthesis of diamond and cubic boron nitride
Open the PDF for in another window
K‐edge absorption analysis of hyrogenated diamond‐like carbon films
Yaxin Wang; Hsiung Chen; R. W. Hoffman
J. Vac. Sci. Technol. A 9, 1153–1156 (1991) https://doi.org/10.1116/1.577593
View articletitled, <em>K</em>‐edge absorption analysis of hyrogenated diamond‐like carbon films
Open the PDF for in another window
The effect of ion energy flux on the properties of hydrogenated amorphous carbon films
G. J. Vandentop; M. Kawasaki; K. Kobayashi; G. A. Somorjai
J. Vac. Sci. Technol. A 9, 1157–1161 (1991) https://doi.org/10.1116/1.577594
View articletitled, The effect of ion energy flux on the properties of hydrogenated amorphous carbon films
Open the PDF for in another window
Effect of microstructure and hydrogen content on the characteristics of amorphous hydrogenated carbon protective coatings
Y. Kokaku; M. Kohno; S. Fujimaki; M. Kitoh
J. Vac. Sci. Technol. A 9, 1162–1165 (1991) https://doi.org/10.1116/1.577595
View articletitled, Effect of microstructure and hydrogen content on the characteristics of amorphous hydrogenated carbon protective coatings
Open the PDF for in another window
Magnetic field and substrate position effects on the ion/deposition flux ratio in magnetron sputtering
G. A. Clarke; N. R. Osborne; R. R. Parsons
J. Vac. Sci. Technol. A 9, 1166–1170 (1991) https://doi.org/10.1116/1.577596
View articletitled, Magnetic field and substrate position effects on the ion/deposition flux ratio in magnetron sputtering
Open the PDF for in another window
Unbalanced magnetrons and new sputtering systems with enhanced plasma ionization
J. Musil; S. Kadlec; W.‐D. Münz
J. Vac. Sci. Technol. A 9, 1171–1177 (1991) https://doi.org/10.1116/1.577597
View articletitled, Unbalanced magnetrons and new sputtering systems with enhanced plasma ionization
Open the PDF for in another window
Correlations of plasma properties and magnetic field characteristics to TiN film properties formed using a dual unbalanced magnetron system
S. L. Rohde; W. D. Sproul; J. R. Rohde
J. Vac. Sci. Technol. A 9, 1178–1183 (1991) https://doi.org/10.1116/1.577598
View articletitled, Correlations of plasma properties and magnetic field characteristics to TiN film properties formed using a dual unbalanced magnetron system
Open the PDF for in another window
Reactive sputtering of molybdenum‐oxide gradient‐index filters
A. F. Jankowski; L. R. Schrawyer; P. L. Perry
J. Vac. Sci. Technol. A 9, 1184–1187 (1991) https://doi.org/10.1116/1.577599
View articletitled, Reactive sputtering of molybdenum‐oxide gradient‐index filters
Open the PDF for in another window
Experimental studies of inhomogeneous coatings for optical applications
M. F. Ouellette; R. V. Lang; K. L. Yan; R. W. Bertram; R. S. Owles; D. Vincent
J. Vac. Sci. Technol. A 9, 1188–1192 (1991) https://doi.org/10.1116/1.577600
View articletitled, Experimental studies of inhomogeneous coatings for optical applications
Open the PDF for in another window
Indium–tin oxide films radio frequency sputtered from specially formulated high density indium–tin oxide targets
Sudhakar Kulkarni; Michel Bayard
J. Vac. Sci. Technol. A 9, 1193–1196 (1991) https://doi.org/10.1116/1.577601
View articletitled, Indium–tin oxide films radio frequency sputtered from specially formulated high density indium–tin oxide targets
Open the PDF for in another window
Modification of optical and mechanical properties of BaF2 bombarded by either Xe or Ar ion
S. Scaglione; D. Flori; L. Caneve; G. Emiliani
J. Vac. Sci. Technol. A 9, 1197–1200 (1991) https://doi.org/10.1116/1.577602
View articletitled, Modification of optical and mechanical properties of BaF<sub>2</sub> bombarded by either Xe or Ar ion
Open the PDF for in another window
Quantitative surface analysis: Agreeing initial data processing
M. P. Seah
J. Vac. Sci. Technol. A 9, 1227–1233 (1991) https://doi.org/10.1116/1.577603
View articletitled, Quantitative surface analysis: Agreeing initial data processing
Open the PDF for in another window
Quantitative surface analysis with elemental standards: Surface roughness limitations
P.T. Dawson; S.A. Petrone
J. Vac. Sci. Technol. A 9, 1234–1236 (1991) https://doi.org/10.1116/1.577604
View articletitled, Quantitative surface analysis with elemental standards: Surface roughness limitations
Open the PDF for in another window
Quantitative microanalysis of oxygen in zirconium by Auger electron spectroscopy
J. S. Betteridge; W. H. Hocking; P. J. Hayward
J. Vac. Sci. Technol. A 9, 1237–1243 (1991) https://doi.org/10.1116/1.577605
View articletitled, Quantitative microanalysis of oxygen in zirconium by Auger electron spectroscopy
Open the PDF for in another window
Microscopic x‐ray photoelectron spectroscopy using a focused soft x‐ray beam
Ken Ninomiya; Yasuharu Hirai; Atsushi Momose; Sadao Aoki; Keizo Suzuki
J. Vac. Sci. Technol. A 9, 1244–1247 (1991) https://doi.org/10.1116/1.577606
View articletitled, Microscopic x‐ray photoelectron spectroscopy using a focused soft x‐ray beam
Open the PDF for in another window
High‐resolution x‐ray microscopy using an undulator source, photoelectron studies with MAXIMUM
C. Capasso; A. K. Ray‐Chaudhuri; W. Ng; S. Liang; R. K. Cole; J. Wallace; F. Cerrina; G. Margaritondo; J. H. Underwood; J. B. Kortright; R. C. C. Perera
J. Vac. Sci. Technol. A 9, 1248–1253 (1991) https://doi.org/10.1116/1.577607
View articletitled, High‐resolution x‐ray microscopy using an undulator source, photoelectron studies with MAXIMUM
Open the PDF for in another window
Direct imaging of monolayer and surface atomic structure by angular distribution Auger microscopy
Douglas G. Frank; Teresa Golden; Oliver M. R. Chyan; Arthur T. Hubbard
J. Vac. Sci. Technol. A 9, 1254–1260 (1991) https://doi.org/10.1116/1.577608
View articletitled, Direct imaging of monolayer and surface atomic structure by angular distribution Auger microscopy
Open the PDF for in another window
The effects of low‐energy ion impacts on graphite observed by scanning tunneling microscopy
G. M. Shedd; P. E. Russell
J. Vac. Sci. Technol. A 9, 1261–1264 (1991) https://doi.org/10.1116/1.577609
View articletitled, The effects of low‐energy ion impacts on graphite observed by scanning tunneling microscopy
Open the PDF for in another window
Variable angle spectroscopic ellipsometry studies of oriented phthalocyanine films
M. K. Debe; D. R. Field
J. Vac. Sci. Technol. A 9, 1265–1271 (1991) https://doi.org/10.1116/1.577610
View articletitled, Variable angle spectroscopic ellipsometry studies of oriented phthalocyanine films
Open the PDF for in another window
Interaction of evaporated copper with vapor‐deposited thin polyimide films
T. Strunskus; C. Hahn; D. Frankel; M. Grunze
J. Vac. Sci. Technol. A 9, 1272–1277 (1991) https://doi.org/10.1116/1.577611
View articletitled, Interaction of evaporated copper with vapor‐deposited thin polyimide films
Open the PDF for in another window
Absorption and interaction of methylene chloride with metallized polyimide films
L. J. Matienzo; F. Emmi; D. C. VanHart; J. C. Lo
J. Vac. Sci. Technol. A 9, 1278–1282 (1991) https://doi.org/10.1116/1.577612
View articletitled, Absorption and interaction of methylene chloride with metallized polyimide films
Open the PDF for in another window
The use of secondary ion mass spectrometry to investigate copolymer enhanced adhesion between immiscible polymers
V. R. Deline; H. R. Brown; K. Char
J. Vac. Sci. Technol. A 9, 1283–1286 (1991) https://doi.org/10.1116/1.577613
View articletitled, The use of secondary ion mass spectrometry to investigate copolymer enhanced adhesion between immiscible polymers
Open the PDF for in another window
Enhanced chemical bonding between lubricants and magnetic coatings by high energy irradiation and its application to tape durability
Ting‐Ho Dan Lee
J. Vac. Sci. Technol. A 9, 1287–1292 (1991) https://doi.org/10.1116/1.577614
View articletitled, Enhanced chemical bonding between lubricants and magnetic coatings by high energy irradiation and its application to tape durability
Open the PDF for in another window
Time‐of‐flight scattering and recoiling spectrometry
J. Wayne Rabalais
J. Vac. Sci. Technol. A 9, 1293–1299 (1991) https://doi.org/10.1116/1.577615
View articletitled, Time‐of‐flight scattering and recoiling spectrometry
Open the PDF for in another window
Plasma desorption mass spectrometry with coincidence counting for the analysis of polymer surfaces
M. A. Park; B. D. Cox; E. A. Schweikert
J. Vac. Sci. Technol. A 9, 1300–1306 (1991) https://doi.org/10.1116/1.577616
View articletitled, Plasma desorption mass spectrometry with coincidence counting for the analysis of polymer surfaces
Open the PDF for in another window
Time‐of‐flight static secondary ion mass spectrometry of additives on polymer surfaces
M. P. Mawn; R. W. Linton; S. R. Bryan; B. Hagenhoff; U. Jürgens; A. Benninghoven
J. Vac. Sci. Technol. A 9, 1307–1311 (1991) https://doi.org/10.1116/1.577617
View articletitled, Time‐of‐flight static secondary ion mass spectrometry of additives on polymer surfaces
Open the PDF for in another window
Comparison of sputter‐initiated resonance ionization spectroscopy and laser atomization resonance ionization spectroscopy to localize tin‐labeled deoxyribose nucleic acid
H. F. Arlinghaus; N. Thonnard; M. T. Spaar; R. A. Sachleben; G. M. Brown; R. S. Foote; F. V. Sloop; J. R. Peterson; K. B. Jacobson
J. Vac. Sci. Technol. A 9, 1312–1319 (1991) https://doi.org/10.1116/1.577618
View articletitled, Comparison of sputter‐initiated resonance ionization spectroscopy and laser atomization resonance ionization spectroscopy to localize tin‐labeled deoxyribose nucleic acid
Open the PDF for in another window
Photoelectron microscopy in the life sciences: Imaging neuron networks
Delio Mercanti; Gelsomina De Stasio; M. Teresa Ciotti; C. Capasso; W. Ng; A. K. Ray‐Chaudhuri; S. H. Liang; R. K. Cole; Z. Y. Guo; J. Wallace; G. Margaritondo; F. Cerrina; J. Underwood; R. Perera; J. Kortright
J. Vac. Sci. Technol. A 9, 1320–1322 (1991) https://doi.org/10.1116/1.577619
View articletitled, Photoelectron microscopy in the life sciences: Imaging neuron networks
Open the PDF for in another window
Auger and x‐ray photoelectron study of surface heterogeneity in ASTM F‐75 alloy prepared for biomedical implantation
R. L. Moore; G. L. Grobe, III; J. A. Gardella
J. Vac. Sci. Technol. A 9, 1323–1328 (1991) https://doi.org/10.1116/1.577620