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The gold/high temperature superconductor interface; metallicity of the near surface region and a search for the proximity effect
D. S. Dessau; Z.‐X. Shen; B. O. Wells; W. E. Spicer; R. S. List; A. J. Arko; R. J. Bartlett; C. G. Olson; D. B. Mitzi; C. B. Eom; A. Kapitulnik; T. H. Geballe
J. Vac. Sci. Technol. A 9, 383–389 (1991)
https://doi.org/10.1116/1.577418
Characterization of bilayer‐metal contacts to high Tc superconducting films
J. Vac. Sci. Technol. A 9, 390–393 (1991)
https://doi.org/10.1116/1.577419
Studies of the behavior of the ‘‘123’’ superconductor system during changes in atmospheric condition
J. Vac. Sci. Technol. A 9, 394–400 (1991)
https://doi.org/10.1116/1.577420
Reduced thermal budget processing of Y–Ba–Cu–O high temperature superconducting thin films by metalorganic chemical vapor deposition
J. Vac. Sci. Technol. A 9, 401–404 (1991)
https://doi.org/10.1116/1.577421
Properties of large area ErBa2Cu3O7−x thin films deposited by ionized cluster beams
J. Vac. Sci. Technol. A 9, 405–408 (1991)
https://doi.org/10.1116/1.577422
Growth and characterization of ferroelectric BaMgF4 films
S. Sinharoy; H. Buhay; M. H. Francombe; W. J. Takei; N. J. Doyle; J. H. Rieger; D. R. Lampe; E. Stepke
J. Vac. Sci. Technol. A 9, 409–413 (1991)
https://doi.org/10.1116/1.577423
Anomalous magnetotransport in epitaxial TbSi2−x
J. Vac. Sci. Technol. A 9, 426–429 (1991)
https://doi.org/10.1116/1.577426
Structural and magnetic properties of ion beam sputtered deposited Cu/Fe multilayers
J. Vac. Sci. Technol. A 9, 430–433 (1991)
https://doi.org/10.1116/1.577427
Effect of post‐deposition annealing on structure and chemistry of the TiN film/steel substrate interfaces
J. Vac. Sci. Technol. A 9, 439–443 (1991)
https://doi.org/10.1116/1.577429
The preparation of microcrystalline silicon (μc‐Si) thin films by remote plasma‐enhanced chemical vapor deposition
J. Vac. Sci. Technol. A 9, 444–449 (1991)
https://doi.org/10.1116/1.577430
Preparation and characterization of amorphous SiC:H thin films
J. Vac. Sci. Technol. A 9, 450–455 (1991)
https://doi.org/10.1116/1.577431
A novel deposition technique for switchable vanadium sesquioxide (V2O3) thin films
J. Vac. Sci. Technol. A 9, 461–465 (1991)
https://doi.org/10.1116/1.577389
A magnetically confined and electron cyclotron resonance heated plasma machine for coating and ion surface modification use
J. Vac. Sci. Technol. A 9, 466–473 (1991)
https://doi.org/10.1116/1.577390
Silicon nitride formation from a silane–nitrogen electron cyclotron resonance plasma
J. Vac. Sci. Technol. A 9, 480–484 (1991)
https://doi.org/10.1116/1.577392
Using a design of experiments approach for characterization of undoped plasma‐enhanced chemical‐vapor deposited SiO2 film properties
J. Vac. Sci. Technol. A 9, 485–491 (1991)
https://doi.org/10.1116/1.577393
The use of a direct current saddle‐field plasma for the deposition of hydrogenated amorphous silicon
J. Vac. Sci. Technol. A 9, 496–500 (1991)
https://doi.org/10.1116/1.577395
The measurement of cathode evaporation rate by quartz crystal microbalance
J. Vac. Sci. Technol. A 9, 501–504 (1991)
https://doi.org/10.1116/1.577396
e−‐beam deposition of In2O3 stabilized ZrO2 films
J. Vac. Sci. Technol. A 9, 510–511 (1991)
https://doi.org/10.1116/1.577398
Ion‐beam deposition of Ag/Fe multilayers and their structural and magnetic properties
J. Vac. Sci. Technol. A 9, 512–514 (1991)
https://doi.org/10.1116/1.577399
Effect of deposition parameters on the optical properties and microstructure of radio frequency magnetron sputtered ZnSe films
J. Vac. Sci. Technol. A 9, 515–518 (1991)
https://doi.org/10.1116/1.577400
Modeling bias sputter planarization of metal films using a ballistic deposition simulation
J. Vac. Sci. Technol. A 9, 519–523 (1991)
https://doi.org/10.1116/1.577401
A fundamental feature scale model for low pressure deposition processes
J. Vac. Sci. Technol. A 9, 524–529 (1991)
https://doi.org/10.1116/1.577402
Cosputtering of alloys. I. Cosputtering of oxides and nitrides using two planar magnetrons
J. Vac. Sci. Technol. A 9, 530–536 (1991)
https://doi.org/10.1116/1.577403
Annealing response of disordered sputter deposited vanadium pentoxide (V2O5)
J. Vac. Sci. Technol. A 9, 542–546 (1991)
https://doi.org/10.1116/1.577405
Structure modification of radio frequency sputtered LaB6 thin films by internal stress
J. Vac. Sci. Technol. A 9, 547–549 (1991)
https://doi.org/10.1116/1.577406
Structure and optical characterization of ZnxCd1−xTe thin films prepared by the close spaced vapor transport method
J. Vac. Sci. Technol. A 9, 550–553 (1991)
https://doi.org/10.1116/1.577407
Determination and observation of electronic defect levels in CuInSe2 crystals and thin films
Fouad A. Abou‐Elfotouh; L. L. Kazmerski; H. R. Moutinho; J. M. Wissel; R. G. Dhere; A. J. Nelson; A. M. Bakry
J. Vac. Sci. Technol. A 9, 554–558 (1991)
https://doi.org/10.1116/1.577408
Topography and microstructure of Al films formed under various deposition conditions
J. Vac. Sci. Technol. A 9, 559–562 (1991)
https://doi.org/10.1116/1.577409
How is the fractal dimension of a thin film top surface connected with the roughness parameters and anisotropy of this surface?
J. Vac. Sci. Technol. A 9, 563–569 (1991)
https://doi.org/10.1116/1.577410
Chemical nature of the barrier in Pb/YBa2Cu3O7−x tunneling structures
J. Vac. Sci. Technol. A 9, 570–573 (1991)
https://doi.org/10.1116/1.577411
Effect of Ge overlayers on the electrical resistance of thin Cr films
J. Vac. Sci. Technol. A 9, 577–580 (1991)
https://doi.org/10.1116/1.577367
Hydrogen storage, microstructural properties of, and electromigration effects in Al/Pd/Al films
J. Vac. Sci. Technol. A 9, 581–585 (1991)
https://doi.org/10.1116/1.577368
Microstructure of sputter‐deposited Al–Cu–Si films
J. Vac. Sci. Technol. A 9, 595–599 (1991)
https://doi.org/10.1116/1.577371
Some experiments that provide direct visualization of reactive sputtering phenomena
J. Vac. Sci. Technol. A 9, 600–603 (1991)
https://doi.org/10.1116/1.577372
Spatial dependence of composition in ion beam sputter deposited GdTbFe thin films
J. Vac. Sci. Technol. A 9, 609–613 (1991)
https://doi.org/10.1116/1.577374
Monte Carlo simulations of magnetron sputtering particle transport
J. Vac. Sci. Technol. A 9, 614–618 (1991)
https://doi.org/10.1116/1.577375
Controlled ion beam sputter deposition of W/Cu/W layered films for microelectronic applications
J. Vac. Sci. Technol. A 9, 625–631 (1991)
https://doi.org/10.1116/1.577377
Quantification of microstructural evolution in sputtered a‐Si thin films by real time spectroscopic ellipsometry
J. Vac. Sci. Technol. A 9, 632–637 (1991)
https://doi.org/10.1116/1.577378
In situ chemical analysis in thin film production using soft x‐ray emission spectroscopy
J. Vac. Sci. Technol. A 9, 638–645 (1991)
https://doi.org/10.1116/1.577379
Ion channeling study of nickel metal growth on Ge(111) at room temperature
J. Vac. Sci. Technol. A 9, 646–648 (1991)
https://doi.org/10.1116/1.577380
Tungsten film deposition by hydrogen atom reaction with WF6
J. Vac. Sci. Technol. A 9, 653–655 (1991)
https://doi.org/10.1116/1.577382
The reaction of oxygen with the hot W(001) surface studied by low‐energy electron microscopy
J. Vac. Sci. Technol. A 9, 659–660 (1991)
https://doi.org/10.1116/1.577384
Plasma diffusion from a low pressure radio frequency source
J. Vac. Sci. Technol. A 9, 661–663 (1991)
https://doi.org/10.1116/1.577385
Use of light scattering in characterizing reactively ion etched profiles
Konstantinos P. Giapis; Richard A. Gottscho; Linda A. Clark; Joseph B. Kruskal; Diane Lambert; Avi Kornblit; Dino Sinatore
J. Vac. Sci. Technol. A 9, 664–668 (1991)
https://doi.org/10.1116/1.577386
Time‐resolved measurements of electron and ion densities in low‐frequency discharges by high‐frequency impedance analysis
J. Vac. Sci. Technol. A 9, 675–681 (1991)
https://doi.org/10.1116/1.577388
Energy distribution measurements in radio frequency plasma discharges using a cubical analyzer
J. Vac. Sci. Technol. A 9, 682–687 (1991)
https://doi.org/10.1116/1.577343
Observation of two‐temperature electrons in a sputtering magnetron plasma
J. Vac. Sci. Technol. A 9, 688–690 (1991)
https://doi.org/10.1116/1.577344
Ion extraction from microwave plasma excited by ordinary and extraordinary waves and applications to the sputtering deposition
J. Vac. Sci. Technol. A 9, 691–695 (1991)
https://doi.org/10.1116/1.577345
Optimized microwave coupling in an electron cyclotron resonance etch tool
J. Vac. Sci. Technol. A 9, 696–701 (1991)
https://doi.org/10.1116/1.577346
The effects of substrate potentials on electron cyclotron resonance plasmas
J. Vac. Sci. Technol. A 9, 702–706 (1991)
https://doi.org/10.1116/1.577347
Compact electron cyclotron resonance ion source with high density plasma
J. Vac. Sci. Technol. A 9, 707–710 (1991)
https://doi.org/10.1116/1.577348
Effects of magnetic field and microwave power on electron cyclotron resonance‐type plasma characteristics
J. Vac. Sci. Technol. A 9, 711–716 (1991)
https://doi.org/10.1116/1.577349
Characterization of electron cyclotron resonance hydrogen plasmas
J. Vac. Sci. Technol. A 9, 717–721 (1991)
https://doi.org/10.1116/1.577350
Electrical and optical measurements of electron cyclotron resonance discharges in Cl2 and Ar
J. Vac. Sci. Technol. A 9, 722–726 (1991)
https://doi.org/10.1116/1.577351
H‐isotope retention and thermal/ion‐induced release in boronized films for the Tokamak Fusion Test Reactor
J. Vac. Sci. Technol. A 9, 727–732 (1991)
https://doi.org/10.1116/1.577352
Observation of helium gas discharge cleaning process for deuterium saturated graphite by A–U gauge
J. Vac. Sci. Technol. A 9, 733–736 (1991)
https://doi.org/10.1116/1.577353
Absolute calibration of a frozen hydrogen pellet mass detector
J. Vac. Sci. Technol. A 9, 737–741 (1991)
https://doi.org/10.1116/1.577354
The effect of limiter conditioning on the Tokamak Fusion Test Reactor edge plasma
S. J. Kilpatrick; C. S. Pitcher; H. F. Dylla; D. M. Manos; I. Nyberg; A. T. Ramsey; B. C. Stratton; J. Timberlake; M. J. Ulrickson
J. Vac. Sci. Technol. A 9, 742–746 (1991)
https://doi.org/10.1116/1.577355
The role of surface microstructure in the sputtering of graphite
J. Vac. Sci. Technol. A 9, 753–758 (1991)
https://doi.org/10.1116/1.577357
The influence of low‐energy particle–surface interactions on the initial stages of thin film formation
J. Vac. Sci. Technol. A 9, 759–767 (1991)
https://doi.org/10.1116/1.577358
Studies of the reactive ion etching of SiGe alloys
J. Vac. Sci. Technol. A 9, 768–774 (1991)
https://doi.org/10.1116/1.577359
Etch mechanism in the reactive ion etching of silicon nitride
J. Vac. Sci. Technol. A 9, 775–778 (1991)
https://doi.org/10.1116/1.577360
Quantification of surface film formation effects in fluorocarbon plasma etching of polysilicon
J. Vac. Sci. Technol. A 9, 779–785 (1991)
https://doi.org/10.1116/1.577361
Etching behavior of an epoxy film in O2/CF4 plasmas
J. Vac. Sci. Technol. A 9, 786–789 (1991)
https://doi.org/10.1116/1.577362
Polyimide etching in Ar, O2, and O2/F2 gas mixtures: Effect of ion energy
J. Vac. Sci. Technol. A 9, 790–795 (1991)
https://doi.org/10.1116/1.577363
Low‐temperature dry etching
J. Vac. Sci. Technol. A 9, 796–803 (1991)
https://doi.org/10.1116/1.577364
Vacuum ultraviolet radiation damage in electron cyclotron resonance and reactive ion etch plasmas
J. Vac. Sci. Technol. A 9, 804–809 (1991)
https://doi.org/10.1116/1.577365
Ion beam etching of GaAs and GaAs/AlGaAs heterostructures probed in real time by spectroscopic ellipsometry
J. Vac. Sci. Technol. A 9, 810–815 (1991)
https://doi.org/10.1116/1.577320
Radio frequency plasma etching of Si/SiO2 by Cl2/O2: Improvements resulting from the time modulation of the processing gases
J. Vac. Sci. Technol. A 9, 816–819 (1991)
https://doi.org/10.1116/1.577321
A novel technique to make foam shells with high sphericity and wall uniformity for cryogenic laser fusion targets
J. Vac. Sci. Technol. A 9, 820–823 (1991)
https://doi.org/10.1116/1.577322
The deposition of oxygen containing plasma polymers for use as permeation barrier coatings
J. Vac. Sci. Technol. A 9, 824–830 (1991)
https://doi.org/10.1116/1.577323
Sandwich holography modeling study of solid deuterium–tritium layers
J. Vac. Sci. Technol. A 9, 831–834 (1991)
https://doi.org/10.1116/1.577324
A fuel pellet injector for the microwave tokamak experiment
J. Vac. Sci. Technol. A 9, 835–841 (1991)
https://doi.org/10.1116/1.577325
A general method for the stability analysis of a uniform liquid fuel layer inside a spherical shell inertial confinement fusion target
J. Vac. Sci. Technol. A 9, 842–847 (1991)
https://doi.org/10.1116/1.577326
Effects of wall conditioning on plasma performance in the Advanced Toroidal Facility stellarator
R. A. Langley; E. C. Crume, Jr.; J. C. Glowienka; L. D. Horton; R. C. Isler; M. Murakami; J. E. Simpkins
J. Vac. Sci. Technol. A 9, 848–851 (1991)
https://doi.org/10.1116/1.577327
Photoemission investigation of compound semiconductor monodisperse clusters
J. Vac. Sci. Technol. A 9, 852–853 (1991)
https://doi.org/10.1116/1.577328
The origins and elimination of oval defects in GaAs layers grown by molecular beam epitaxy
J. Vac. Sci. Technol. A 9, 854–857 (1991)
https://doi.org/10.1116/1.577329
Low temperature processing and characterization of metastable anisotype heterojunction‐gate strained‐layer field‐effect transistors
J. Vac. Sci. Technol. A 9, 858–862 (1991)
https://doi.org/10.1116/1.577330
Modeling and performance characteristics of GaAs quantum well infrared detector structures
J. Vac. Sci. Technol. A 9, 863–869 (1991)
https://doi.org/10.1116/1.577331
Factors affecting the formation, uniformity, and density of misfit and threading dislocation arrays during heteroepitaxial growth
J. Vac. Sci. Technol. A 9, 880–884 (1991)
https://doi.org/10.1116/1.577334
Ballistic electron emission spectroscopy of noble metal–GaP(110) interfaces
J. Vac. Sci. Technol. A 9, 885–890 (1991)
https://doi.org/10.1116/1.577335
Surface photovoltage effects in photoemission from metal/GaP(110) interfaces: Temperature‐dependent Fermi level movement
J. Vac. Sci. Technol. A 9, 891–897 (1991)
https://doi.org/10.1116/1.577336
Coverage dependent surface photovoltage induced by synchrotron radiation at metal/GaAs interfaces
J. Vac. Sci. Technol. A 9, 898–901 (1991)
https://doi.org/10.1116/1.577337
Correlation of interface chemistry, barrier height, and step density for Al on vicinal GaAs(100) surfaces
J. Vac. Sci. Technol. A 9, 902–906 (1991)
https://doi.org/10.1116/1.577338
X‐ray absorption fine structure studies of buried Ge–Si interfaces
J. Vac. Sci. Technol. A 9, 907–911 (1991)
https://doi.org/10.1116/1.577339
Electronic and vibrational properties of semiconducting crystalline FeSi2 layers grown on Si(111)
J. Vac. Sci. Technol. A 9, 912–916 (1991)
https://doi.org/10.1116/1.577340
Control of Ge homojunction band offsets via ultrathin Ga–As dipole layers
J. Vac. Sci. Technol. A 9, 917–921 (1991)
https://doi.org/10.1116/1.577341
Comparative study of the oxide growth mode on GaAs(111) and (1̄1̄1̄) surfaces: Implications for direct oxide electron beam writing
J. Vac. Sci. Technol. A 9, 922–930 (1991)
https://doi.org/10.1116/1.577342
Synchrotron‐radiation‐stimulated tungsten deposition on silicon from W(CO)6
J. Vac. Sci. Technol. A 9, 931–934 (1991)
https://doi.org/10.1116/1.577551
Magnetron enhanced etching of GaAs
J. Vac. Sci. Technol. A 9, 935–938 (1991)
https://doi.org/10.1116/1.577550
Initial stages of heterojunction formation: Si on GaAs(100)
J. Vac. Sci. Technol. A 9, 939–943 (1991)
https://doi.org/10.1116/1.577552
Determination of the carrier concentration of doped ZnSe from infrared measurements
J. Vac. Sci. Technol. A 9, 949–953 (1991)
https://doi.org/10.1116/1.577554
The interaction of ion implantation with photoresist ashing: A statistical experimental design study
J. Vac. Sci. Technol. A 9, 957–965 (1991)
https://doi.org/10.1116/1.577556
Au interfaces with epitaxially grown CdTe(111): Chemistry and barrier heights
J. Vac. Sci. Technol. A 9, 966–971 (1991)
https://doi.org/10.1116/1.577557
Free energy model for the analysis of bonding in a‐SixNyHz alloys
J. Vac. Sci. Technol. A 9, 972–977 (1991)
https://doi.org/10.1116/1.577558
Formation and Schottky barrier height of Au contacts to CuInSe2
J. Vac. Sci. Technol. A 9, 978–982 (1991)
https://doi.org/10.1116/1.577559
Photoluminescence and surface photovoltaic spectra of strained InP on GaAs
J. Vac. Sci. Technol. A 9, 983–986 (1991)
https://doi.org/10.1116/1.577560
Internal photoemission in CoGa/GaAs Schottky barriers, possible injection of electrons into the L valley
J. Vac. Sci. Technol. A 9, 987–989 (1991)
https://doi.org/10.1116/1.577561
Photoemission study of the annealed Pd/GaAs(110) interface
J. Vac. Sci. Technol. A 9, 990–993 (1991)
https://doi.org/10.1116/1.577562
The chemical vapor deposition of SiO2 from tetraethoxysilane: The effect of the surface hydroxyl concentration
J. Vac. Sci. Technol. A 9, 1002–1006 (1991)
https://doi.org/10.1116/1.577566
Low‐energy electron microscopy of semiconductor surfaces
J. Vac. Sci. Technol. A 9, 1007–1013 (1991)
https://doi.org/10.1116/1.577567
Scanning tunneling microscopy of one‐dimensional periodic corrugated silicon surfaces
J. Vac. Sci. Technol. A 9, 1014–1019 (1991)
https://doi.org/10.1116/1.577568
Silicon (2p) surface core‐level line shape of Si(111)–B
J. Vac. Sci. Technol. A 9, 1020–1025 (1991)
https://doi.org/10.1116/1.577569
Clean and oxygen covered InP(110) surfaces differential reflectivity
J. Vac. Sci. Technol. A 9, 1026–1028 (1991)
https://doi.org/10.1116/1.577570
The thermal oxidation of AlGaAs
J. Vac. Sci. Technol. A 9, 1029–1034 (1991)
https://doi.org/10.1116/1.577571
GaAs surface oxidation and deoxidation using electron cyclotron resonance oxygen and hydrogen plasmas
J. Vac. Sci. Technol. A 9, 1040–1044 (1991)
https://doi.org/10.1116/1.577573
Thin‐film deposition in the afterglows of N2 and H2 microwave plasmas
J. Vac. Sci. Technol. A 9, 1051–1054 (1991)
https://doi.org/10.1116/1.577575
Plasma jet dry etching using different electrode configurations
J. Vac. Sci. Technol. A 9, 1055–1057 (1991)
https://doi.org/10.1116/1.577576
Surface etching and roughening in integrated processing of thermal oxides
J. Vac. Sci. Technol. A 9, 1058–1065 (1991)
https://doi.org/10.1116/1.577577
Process compatibility in integrated processing of semiconductor devices in multichamber systems
G. Lucovsky; S. S. Kim; J. T. Fitch; Cheng Wang; R. A. Rudder; G. G. Fountain; S. V. Hattangady; R. J. Markunas
J. Vac. Sci. Technol. A 9, 1066–1072 (1991)
https://doi.org/10.1116/1.577578
In situ native oxide clean followed by chemical vapor deposition of tungsten silicide on polysilicon in a cluster tool
J. Vac. Sci. Technol. A 9, 1073–1082 (1991)
https://doi.org/10.1116/1.577579
Monte Carlo low pressure deposition profile simulations
J. Vac. Sci. Technol. A 9, 1083–1087 (1991)
https://doi.org/10.1116/1.577580
Helium plasma enhanced chemical vapor deposited oxides and nitrides: Process mechanisms and applications in advanced device structures
J. Vac. Sci. Technol. A 9, 1088–1093 (1991)
https://doi.org/10.1116/1.577581
Low‐temperature (300 °C) stacked oxide–nitride–oxide gate dielectrics with remote plasma‐enhanced chemical vapor deposition
J. Vac. Sci. Technol. A 9, 1094–1098 (1991)
https://doi.org/10.1116/1.577582
Stresses in multilayer combinations of sputter deposited coatings of Ni, Ti, TiC+Ni, and TiB2+Ni on carbon steel substrates
J. Vac. Sci. Technol. A 9, 1104–1108 (1991)
https://doi.org/10.1116/1.577584
Process optimization and scale‐up of a rapid thermal processing system using design of experiments
J. Vac. Sci. Technol. A 9, 1109–1112 (1991)
https://doi.org/10.1116/1.577585
Sputter deposition of precision Si/Si3N4 Bragg reflectors using multitasking interactive processing control
J. Vac. Sci. Technol. A 9, 1113–1117 (1991)
https://doi.org/10.1116/1.577586
Large‐area sputtering of in situ superconducting YBa2Cu3O7 films
J. Vac. Sci. Technol. A 9, 1118–1122 (1991)
https://doi.org/10.1116/1.577587
Characterization of ion beam‐induced surface modification of diamond films by real time spectroscopic ellipsometry
J. Vac. Sci. Technol. A 9, 1123–1128 (1991)
https://doi.org/10.1116/1.577588
The effect of radio frequency substrate biasing in the deposition of diamond‐like carbon films in an electron cyclotron resonance discharge
J. Vac. Sci. Technol. A 9, 1129–1133 (1991)
https://doi.org/10.1116/1.577589
Effect of oxygen on filament activity in diamond chemical vapor deposition
J. Vac. Sci. Technol. A 9, 1134–1139 (1991)
https://doi.org/10.1116/1.577590
X‐ray absorption study of diamond films grown by chemical vapor deposition
X.‐Q. Yang; M. W. Ruckman; T. A. Skotheim; M. den Boer; Yu Zheng; A. R. Badzian; T. Badzian; R. Messier; A. R. Srivatsa
J. Vac. Sci. Technol. A 9, 1140–1144 (1991)
https://doi.org/10.1116/1.577591
Current research problems and opportunities in the vapor phase synthesis of diamond and cubic boron nitride
J. Vac. Sci. Technol. A 9, 1145–1152 (1991)
https://doi.org/10.1116/1.577592
K‐edge absorption analysis of hyrogenated diamond‐like carbon films
J. Vac. Sci. Technol. A 9, 1153–1156 (1991)
https://doi.org/10.1116/1.577593
The effect of ion energy flux on the properties of hydrogenated amorphous carbon films
J. Vac. Sci. Technol. A 9, 1157–1161 (1991)
https://doi.org/10.1116/1.577594
Effect of microstructure and hydrogen content on the characteristics of amorphous hydrogenated carbon protective coatings
J. Vac. Sci. Technol. A 9, 1162–1165 (1991)
https://doi.org/10.1116/1.577595
Magnetic field and substrate position effects on the ion/deposition flux ratio in magnetron sputtering
J. Vac. Sci. Technol. A 9, 1166–1170 (1991)
https://doi.org/10.1116/1.577596
Unbalanced magnetrons and new sputtering systems with enhanced plasma ionization
J. Vac. Sci. Technol. A 9, 1171–1177 (1991)
https://doi.org/10.1116/1.577597
Correlations of plasma properties and magnetic field characteristics to TiN film properties formed using a dual unbalanced magnetron system
J. Vac. Sci. Technol. A 9, 1178–1183 (1991)
https://doi.org/10.1116/1.577598
Reactive sputtering of molybdenum‐oxide gradient‐index filters
J. Vac. Sci. Technol. A 9, 1184–1187 (1991)
https://doi.org/10.1116/1.577599
Experimental studies of inhomogeneous coatings for optical applications
J. Vac. Sci. Technol. A 9, 1188–1192 (1991)
https://doi.org/10.1116/1.577600
Indium–tin oxide films radio frequency sputtered from specially formulated high density indium–tin oxide targets
J. Vac. Sci. Technol. A 9, 1193–1196 (1991)
https://doi.org/10.1116/1.577601
Modification of optical and mechanical properties of BaF2 bombarded by either Xe or Ar ion
J. Vac. Sci. Technol. A 9, 1197–1200 (1991)
https://doi.org/10.1116/1.577602
Quantitative surface analysis with elemental standards: Surface roughness limitations
J. Vac. Sci. Technol. A 9, 1234–1236 (1991)
https://doi.org/10.1116/1.577604
Quantitative microanalysis of oxygen in zirconium by Auger electron spectroscopy
J. Vac. Sci. Technol. A 9, 1237–1243 (1991)
https://doi.org/10.1116/1.577605
Microscopic x‐ray photoelectron spectroscopy using a focused soft x‐ray beam
J. Vac. Sci. Technol. A 9, 1244–1247 (1991)
https://doi.org/10.1116/1.577606
High‐resolution x‐ray microscopy using an undulator source, photoelectron studies with MAXIMUM
C. Capasso; A. K. Ray‐Chaudhuri; W. Ng; S. Liang; R. K. Cole; J. Wallace; F. Cerrina; G. Margaritondo; J. H. Underwood; J. B. Kortright; R. C. C. Perera
J. Vac. Sci. Technol. A 9, 1248–1253 (1991)
https://doi.org/10.1116/1.577607
Direct imaging of monolayer and surface atomic structure by angular distribution Auger microscopy
J. Vac. Sci. Technol. A 9, 1254–1260 (1991)
https://doi.org/10.1116/1.577608
The effects of low‐energy ion impacts on graphite observed by scanning tunneling microscopy
J. Vac. Sci. Technol. A 9, 1261–1264 (1991)
https://doi.org/10.1116/1.577609
Variable angle spectroscopic ellipsometry studies of oriented phthalocyanine films
J. Vac. Sci. Technol. A 9, 1265–1271 (1991)
https://doi.org/10.1116/1.577610
Interaction of evaporated copper with vapor‐deposited thin polyimide films
J. Vac. Sci. Technol. A 9, 1272–1277 (1991)
https://doi.org/10.1116/1.577611
Absorption and interaction of methylene chloride with metallized polyimide films
J. Vac. Sci. Technol. A 9, 1278–1282 (1991)
https://doi.org/10.1116/1.577612
The use of secondary ion mass spectrometry to investigate copolymer enhanced adhesion between immiscible polymers
J. Vac. Sci. Technol. A 9, 1283–1286 (1991)
https://doi.org/10.1116/1.577613
Enhanced chemical bonding between lubricants and magnetic coatings by high energy irradiation and its application to tape durability
J. Vac. Sci. Technol. A 9, 1287–1292 (1991)
https://doi.org/10.1116/1.577614
Plasma desorption mass spectrometry with coincidence counting for the analysis of polymer surfaces
J. Vac. Sci. Technol. A 9, 1300–1306 (1991)
https://doi.org/10.1116/1.577616
Time‐of‐flight static secondary ion mass spectrometry of additives on polymer surfaces
J. Vac. Sci. Technol. A 9, 1307–1311 (1991)
https://doi.org/10.1116/1.577617
Comparison of sputter‐initiated resonance ionization spectroscopy and laser atomization resonance ionization spectroscopy to localize tin‐labeled deoxyribose nucleic acid
H. F. Arlinghaus; N. Thonnard; M. T. Spaar; R. A. Sachleben; G. M. Brown; R. S. Foote; F. V. Sloop; J. R. Peterson; K. B. Jacobson
J. Vac. Sci. Technol. A 9, 1312–1319 (1991)
https://doi.org/10.1116/1.577618
Photoelectron microscopy in the life sciences: Imaging neuron networks
Delio Mercanti; Gelsomina De Stasio; M. Teresa Ciotti; C. Capasso; W. Ng; A. K. Ray‐Chaudhuri; S. H. Liang; R. K. Cole; Z. Y. Guo; J. Wallace; G. Margaritondo; F. Cerrina; J. Underwood; R. Perera; J. Kortright
J. Vac. Sci. Technol. A 9, 1320–1322 (1991)
https://doi.org/10.1116/1.577619
Auger and x‐ray photoelectron study of surface heterogeneity in ASTM F‐75 alloy prepared for biomedical implantation
J. Vac. Sci. Technol. A 9, 1323–1328 (1991)
https://doi.org/10.1116/1.577620