Skip Nav Destination

Issues

Select Year

Issue

Band structure of InGaAs

A. Stampfl; G. Kemister; R. C. G. Leckey; J. D. Riley; F. U. Hillebrecht; D. H. Ehlers; L. Ley

J. Vac. Sci. Technol. A 7, 2525–2531 (1989) https://doi.org/10.1116/1.575791

Abstract

View articletitled, Band structure of InGaAs

Open the PDF for in another window

Quantitative determination of oxygen in AlGaAs layers by secondary ion mass spectrometry under ¹⁸O flux

T. Achtnich; G. Burri; M. Ilegems

J. Vac. Sci. Technol. A 7, 2532–2536 (1989) https://doi.org/10.1116/1.575792

Abstract

View articletitled, Quantitative determination of oxygen in AlGaAs layers by secondary ion mass spectrometry under 18O flux

Open the PDF for in another window

Study of oxygen incorporation in AlGaAs layers grown by molecular‐beam epitaxy

T. Achtnich; G. Burri; M. Ilegems

J. Vac. Sci. Technol. A 7, 2537–2541 (1989) https://doi.org/10.1116/1.575793

Abstract

View articletitled, Study of oxygen incorporation in AlGaAs layers grown by molecular‐beam epitaxy

Open the PDF for in another window

Study of the background sources in the trace analysis of carbon using secondary ion mass spectrometry

Junji Kobayashi; Masato Nakajima; Koichi Ishida

J. Vac. Sci. Technol. A 7, 2542–2548 (1989) https://doi.org/10.1116/1.575794

Abstract

View articletitled, Study of the background sources in the trace analysis of carbon using secondary ion mass spectrometry

Open the PDF for in another window

Effects of Kikuchi scattering on reflection high‐energy electron diffraction intensities during molecular‐beam epitaxy GaAs growth

G. E. Crook; K. G. Eyink; A. C. Campbell; D. R. Hinson; B. G. Streetman

J. Vac. Sci. Technol. A 7, 2549–2553 (1989) https://doi.org/10.1116/1.575795

Abstract

View articletitled, Effects of Kikuchi scattering on reflection high‐energy electron diffraction intensities during molecular‐beam epitaxy GaAs growth

Open the PDF for in another window

Characterization of a new reactor for remote plasma chemical vapor deposition

Alan D. Huelsman; R. Reif

J. Vac. Sci. Technol. A 7, 2554–2561 (1989) https://doi.org/10.1116/1.575796

Abstract

View articletitled, Characterization of a new reactor for remote plasma chemical vapor deposition

Open the PDF for in another window

Variation of Hg incorporation in molecular‐beam epitaxially grown HgCdTe structures due to growth front roughness and misoriented substrates: Role of kink sites

Jasprit Singh; Jose Arias

J. Vac. Sci. Technol. A 7, 2562–2569 (1989) https://doi.org/10.1116/1.575797

Abstract

View articletitled, Variation of Hg incorporation in molecular‐beam epitaxially grown HgCdTe structures due to growth front roughness and misoriented substrates: Role of kink sites

Open the PDF for in another window

Chemical modifications of Hg_0.1Cd_0.9Te surfaces: Analysis with Auger electron spectroscopy

R. Tenne; R. Brener; R. Triboulet

J. Vac. Sci. Technol. A 7, 2570–2574 (1989) https://doi.org/10.1116/1.575798

Abstract

View articletitled, Chemical modifications of Hg0.1Cd0.9Te surfaces: Analysis with Auger electron spectroscopy

Open the PDF for in another window

Buildup of ion implantation damage in Hg_1−x Cd_xTe for various x values

C. Uzan‐Saguy; D. Comedi; V. Richter; R. Kalish; R. Triboulet

J. Vac. Sci. Technol. A 7, 2575–2579 (1989) https://doi.org/10.1116/1.575799

Abstract

View articletitled, Buildup of ion implantation damage in Hg1−x CdxTe for various x values

Open the PDF for in another window

Nucleation of misfit dislocations in strained‐layer epitaxy in the Ge_xSi_1−x/Si system

R. Hull; J. C. Bean

J. Vac. Sci. Technol. A 7, 2580–2585 (1989) https://doi.org/10.1116/1.575800

Abstract

View articletitled, Nucleation of misfit dislocations in strained‐layer epitaxy in the GexSi1−x/Si system

Open the PDF for in another window

Influence of ion beam activation on the mode of growth of Cu on Si(100)

B. D. Sartwell

J. Vac. Sci. Technol. A 7, 2586–2592 (1989) https://doi.org/10.1116/1.575801

Abstract

View articletitled, Influence of ion beam activation on the mode of growth of Cu on Si(100)

Open the PDF for in another window

Activated metal deposition and oxide growth on semiconductors: TiO₂/Si(111)‐2×1

F. Xu; D. M. Hill; P. J. Benning; J. H. Weaver

J. Vac. Sci. Technol. A 7, 2593–2597 (1989) https://doi.org/10.1116/1.575802

Abstract

View articletitled, Activated metal deposition and oxide growth on semiconductors: TiO2/Si(111)‐2×1

Open the PDF for in another window

Aluminum deposition by ultraviolet laser photofragmentation of trimethylaluminum on Al: Identification of photoproducts and desorption dynamics

T. E. Orlowski; D. A. Mantell

J. Vac. Sci. Technol. A 7, 2598–2603 (1989) https://doi.org/10.1116/1.575803

Abstract

View articletitled, Aluminum deposition by ultraviolet laser photofragmentation of trimethylaluminum on Al: Identification of photoproducts and desorption dynamics

Open the PDF for in another window

Electron spectroscopic studies of the Dy/Si(111) interface

Y. X. Wang; B. Q. Li; Y. R. Xing; C. C. Hsu

J. Vac. Sci. Technol. A 7, 2604–2608 (1989) https://doi.org/10.1116/1.575804

Abstract

View articletitled, Electron spectroscopic studies of the Dy/Si(111) interface

Open the PDF for in another window

An energy dispersion spectroscopy technique to measure titanium silicide lateral diffusion

F. La Via; C. Spinella; E. Rimini; A. La Mantia; G. Ferla

J. Vac. Sci. Technol. A 7, 2609–2613 (1989) https://doi.org/10.1116/1.575805

Abstract

View articletitled, An energy dispersion spectroscopy technique to measure titanium silicide lateral diffusion

Open the PDF for in another window

Surface hydrogen content and passivation of silicon deposited by plasma induced chemical vapor deposition from silane and the implications for the reaction mechanism

S. Vepřek; F. ‐A. Sarrott; S. Rambert; E. Taglauer

J. Vac. Sci. Technol. A 7, 2614–2624 (1989) https://doi.org/10.1116/1.575806

Abstract

View articletitled, Surface hydrogen content and passivation of silicon deposited by plasma induced chemical vapor deposition from silane and the implications for the reaction mechanism

Open the PDF for in another window

Hydrogen detection in hydrogenated amorphous silicon by ion‐induced Auger spectroscopy

G. A. Hirata; M. H. Farías; L. Cota‐Araiza; D. H. Galván; R. Asomoza; M. A. Vidal; R. Quintero

J. Vac. Sci. Technol. A 7, 2625–2627 (1989) https://doi.org/10.1116/1.575807

Abstract

View articletitled, Hydrogen detection in hydrogenated amorphous silicon by ion‐induced Auger spectroscopy

Open the PDF for in another window

Substrate effect on the electrical properties of a‐Si:H thin films and its modification by diffusion‐blocking interlayers

J. Bregman; J. Gordon; Yoram Shapira; E. Fortunato; R. Martins; L. Guimaraes

J. Vac. Sci. Technol. A 7, 2628–2631 (1989) https://doi.org/10.1116/1.575808

Abstract

View articletitled, Substrate effect on the electrical properties of a‐Si:H thin films and its modification by diffusion‐blocking interlayers

Open the PDF for in another window

The preparation of amorphous Si:H thin films for optoelectronic applications by glow discharge dissociation of SiH₄ using a direct‐current saddle‐field plasma chamber

R. V. Kruzelecky; S. Zukotynski; C. I. Ukah; F. Gaspari; J. M. Perz

J. Vac. Sci. Technol. A 7, 2632–2638 (1989) https://doi.org/10.1116/1.575765

Abstract

View articletitled, The preparation of amorphous Si:H thin films for optoelectronic applications by glow discharge dissociation of SiH4 using a direct‐current saddle‐field plasma chamber

Open the PDF for in another window

Multipurpose plasma generator suitable for diamondlike carbon film formation

I. K. Varga

J. Vac. Sci. Technol. A 7, 2639–2645 (1989) https://doi.org/10.1116/1.575766

Abstract

View articletitled, Multipurpose plasma generator suitable for diamondlike carbon film formation

Open the PDF for in another window

Radio‐frequency sputter deposition of boron nitride based thin films

C. Mitterer; P. Rödhammer; H. Störi; F. Jeglitsch

J. Vac. Sci. Technol. A 7, 2646–2651 (1989) https://doi.org/10.1116/1.575767

Abstract

View articletitled, Radio‐frequency sputter deposition of boron nitride based thin films

Open the PDF for in another window

Dense plasma production and film deposition by new high‐rate sputtering using an electric mirror

Morito Matsuoka; Ken’ichi Ono

J. Vac. Sci. Technol. A 7, 2652–2657 (1989) https://doi.org/10.1116/1.575768

Abstract

View articletitled, Dense plasma production and film deposition by new high‐rate sputtering using an electric mirror

Open the PDF for in another window

Ceramic coating as an ultrahigh vacuum compatible protective surface treatment for aluminum alloys against reactive species

Maki Suemitsu; Tetsuya Kaneko; Nobuo Miyamoto

J. Vac. Sci. Technol. A 7, 2658–2662 (1989) https://doi.org/10.1116/1.575769

Abstract

View articletitled, Ceramic coating as an ultrahigh vacuum compatible protective surface treatment for aluminum alloys against reactive species

Open the PDF for in another window

Stress and microstructure in tungsten sputtered thin films

A. M. Haghiri‐Gosnet; F. R. Ladan; C. Mayeux; H. Launois; M. C. Joncour

J. Vac. Sci. Technol. A 7, 2663–2669 (1989) https://doi.org/10.1116/1.575770

Abstract

View articletitled, Stress and microstructure in tungsten sputtered thin films

Open the PDF for in another window

Photoemission investigation of the Cr/Ag(100) and Cr/Au(100) interfaces

M. C. Hanf; L. Haderbache; P. Wetzel; C. Pirri; J. C. Peruchetti; D. Bolmont; G. Gewinner

J. Vac. Sci. Technol. A 7, 2670–2672 (1989) https://doi.org/10.1116/1.575771

Abstract

View articletitled, Photoemission investigation of the Cr/Ag(100) and Cr/Au(100) interfaces

Open the PDF for in another window

Effects of Pt and Zr on the oxidation behavior of FeTbCo magneto‐optic films: X‐ray photoelectron spectroscopy

Debasis Majumdar; T. K. Hatwar

J. Vac. Sci. Technol. A 7, 2673–2677 (1989) https://doi.org/10.1116/1.575772

Abstract

View articletitled, Effects of Pt and Zr on the oxidation behavior of FeTbCo magneto‐optic films: X‐ray photoelectron spectroscopy

Open the PDF for in another window

Transmission electron microscopy study of cross‐section microstructures of magnetron sputter ion‐plated Al films on Ni substrate

L. J. Wan; K. H. Kuo

J. Vac. Sci. Technol. A 7, 2678–2680 (1989) https://doi.org/10.1116/1.575773

Abstract

View articletitled, Transmission electron microscopy study of cross‐section microstructures of magnetron sputter ion‐plated Al films on Ni substrate

Open the PDF for in another window

In situ x‐ray photoelectron spectroscopy/Auger electron spectroscopy studies of 302 stainless steel annealed in humidified H₂/N₂ atmospheres

A. L. Cabrera

J. Vac. Sci. Technol. A 7, 2681–2687 (1989) https://doi.org/10.1116/1.575774

Abstract

View articletitled, In situ x‐ray photoelectron spectroscopy/Auger electron spectroscopy studies of 302 stainless steel annealed in humidified H2/N2 atmospheres

Open the PDF for in another window

Quantitative analysis of adsorbed layers by Auger electron spectroscopy

O. Millo; A. Many; Y. Goldstein

J. Vac. Sci. Technol. A 7, 2688–2694 (1989) https://doi.org/10.1116/1.575775

Abstract

View articletitled, Quantitative analysis of adsorbed layers by Auger electron spectroscopy

Open the PDF for in another window

Surface composition of gas‐covered alloys

B. C. Khanra; S. Modak

J. Vac. Sci. Technol. A 7, 2695–2700 (1989) https://doi.org/10.1116/1.575776

Abstract

View articletitled, Surface composition of gas‐covered alloys

Open the PDF for in another window

Effect of hydrogen plasma treatment on CF₄ plasma etching characteristics of single‐crystal, polycrystalline, and amorphous silicon

Neeta Agrawal; R. D. Tarey; K. L. Chopra

J. Vac. Sci. Technol. A 7, 2701–2704 (1989) https://doi.org/10.1116/1.575777

Abstract

View articletitled, Effect of hydrogen plasma treatment on CF4 plasma etching characteristics of single‐crystal, polycrystalline, and amorphous silicon

Open the PDF for in another window

Diode and hollow cathode etching in CF₄

K. E. Davies; C. M. Horwitz

J. Vac. Sci. Technol. A 7, 2705–2708 (1989) https://doi.org/10.1116/1.575778

Abstract

View articletitled, Diode and hollow cathode etching in CF4

Open the PDF for in another window

Ion bombardment of polyimide films

B. J. Bachman; M. J. Vasile

J. Vac. Sci. Technol. A 7, 2709–2716 (1989) https://doi.org/10.1116/1.575779

Abstract

View articletitled, Ion bombardment of polyimide films

Open the PDF for in another window

A model of dynamic damping in surface and interfacial kinetics

J. W. Erickson

J. Vac. Sci. Technol. A 7, 2717–2724 (1989) https://doi.org/10.1116/1.575780

Abstract

View articletitled, A model of dynamic damping in surface and interfacial kinetics

Open the PDF for in another window

Alloying effect on a property of hydrogen gettering materials: An empirical formula to estimate heat of hydride formation for metals and alloys

Kuniaki Watanabe; Masao Matsuyama; Kan Ashida; Hitoshi Miyake

J. Vac. Sci. Technol. A 7, 2725–2729 (1989) https://doi.org/10.1116/1.575781

Abstract

View articletitled, Alloying effect on a property of hydrogen gettering materials: An empirical formula to estimate heat of hydride formation for metals and alloys

Open the PDF for in another window

Study of direct‐current, pulsed, and temperature–field emission from LaB₆/tungsten field emitter

Rajendra S. Khairnar; C. V. Dharmadhikari; Dilip S. Joag; P. L. Kanitkar; A. S. Nigavekar

J. Vac. Sci. Technol. A 7, 2730–2733 (1989) https://doi.org/10.1116/1.575782

Abstract

View articletitled, Study of direct‐current, pulsed, and temperature–field emission from LaB6/tungsten field emitter

Open the PDF for in another window

Scanning tunneling microscopy of compact disk surfaces

B. A. Sexton; G. F. Cotterill

J. Vac. Sci. Technol. A 7, 2734–2740 (1989) https://doi.org/10.1116/1.575783

Abstract

View articletitled, Scanning tunneling microscopy of compact disk surfaces

Open the PDF for in another window

Current–voltage characteristics of silicon measured with the scanning tunneling microscope in air

J. Jahanmir; P. E. West; A. Young; T. N. Rhodin

J. Vac. Sci. Technol. A 7, 2741–2744 (1989) https://doi.org/10.1116/1.575784

Abstract

View articletitled, Current–voltage characteristics of silicon measured with the scanning tunneling microscope in air

Open the PDF for in another window

Reflection electron microscope imaging of an operating scanning tunneling microscope

M. Kuwabara; W. Lo; J. C. H. Spence

J. Vac. Sci. Technol. A 7, 2745–2751 (1989) https://doi.org/10.1116/1.575785

Abstract

View articletitled, Reflection electron microscope imaging of an operating scanning tunneling microscope

Open the PDF for in another window

Effect of magnetic field on plasma characteristics of built‐in high‐frequency coil type sputtering apparatus

Mutsuo Yamashita

J. Vac. Sci. Technol. A 7, 2752–2757 (1989) https://doi.org/10.1116/1.575786

Abstract

View articletitled, Effect of magnetic field on plasma characteristics of built‐in high‐frequency coil type sputtering apparatus

Open the PDF for in another window

In situ laser diagnostic studies of plasma‐generated particulate contamination

G. S. Selwyn; J. Singh; R. S. Bennett

J. Vac. Sci. Technol. A 7, 2758–2765 (1989) https://doi.org/10.1116/1.576175

Abstract

View articletitled, In situ laser diagnostic studies of plasma‐generated particulate contamination

Open the PDF for in another window

Flow of a rarefied polyatomic gas between parallel plates

S. S. Lo; S. K. Loyalka

J. Vac. Sci. Technol. A 7, 2766–2773 (1989) https://doi.org/10.1116/1.576176

Abstract

View articletitled, Flow of a rarefied polyatomic gas between parallel plates

Open the PDF for in another window

Electrical characterization of radio‐frequency parallel‐plate capacitively coupled discharges

B. Andries; G. Ravel; L. Peccoud

J. Vac. Sci. Technol. A 7, 2774–2783 (1989) https://doi.org/10.1116/1.576177

Abstract

View articletitled, Electrical characterization of radio‐frequency parallel‐plate capacitively coupled discharges

Open the PDF for in another window

Primary electron orbit calculation in a bucket‐type ion source for ion milling

Y. Ono; Y. Hakamata; T. Sato; I. Hashimoto

J. Vac. Sci. Technol. A 7, 2784–2787 (1989) https://doi.org/10.1116/1.576178

Abstract

View articletitled, Primary electron orbit calculation in a bucket‐type ion source for ion milling

Open the PDF for in another window

Intercomparison of vacuum standards between the Physikalisch Technische Bundesanstalt (Germany) and the National Physical Laboratory (India) using two spinning rotor gauges

J. K. N. Sharma; Pardeep Mohan; W. Jitschin; P. Röhl

J. Vac. Sci. Technol. A 7, 2788–2793 (1989) https://doi.org/10.1116/1.576179

Abstract

View articletitled, Intercomparison of vacuum standards between the Physikalisch Technische Bundesanstalt (Germany) and the National Physical Laboratory (India) using two spinning rotor gauges

Open the PDF for in another window

Calibration of an argon in germanium standard using Rutherford backscattering spectrometry for energy dispersive x‐ray spectroscopy

K. M. Skulina; G. A. van der Leeden; D. H. Vincent

J. Vac. Sci. Technol. A 7, 2794–2796 (1989) https://doi.org/10.1116/1.576180

Abstract

View articletitled, Calibration of an argon in germanium standard using Rutherford backscattering spectrometry for energy dispersive x‐ray spectroscopy

Open the PDF for in another window

Chemical vapor deposition of boron and boron nitride from decaborane(14)

Yoon Gi Kim; P. A. Dowben; J. T. Spencer; G. O. Ramseyer

J. Vac. Sci. Technol. A 7, 2796–2799 (1989) https://doi.org/10.1116/1.576181

Abstract

View articletitled, Chemical vapor deposition of boron and boron nitride from decaborane(14)

Open the PDF for in another window

Plasma chemical vapor deposition of thin platinum films

E. Feurer; S. Kraus; H. Suhr

J. Vac. Sci. Technol. A 7, 2799–2802 (1989) https://doi.org/10.1116/1.576182

Abstract

View articletitled, Plasma chemical vapor deposition of thin platinum films

Open the PDF for in another window

Laser irradiation of polyethylene oxide

M. Yang; S. J. Fang; R. Salovey; S. D. Allen

J. Vac. Sci. Technol. A 7, 2802–2804 (1989) https://doi.org/10.1116/1.576183

Abstract

View articletitled, Laser irradiation of polyethylene oxide

Open the PDF for in another window

Hydrogen pressure measurement using the intensity of the light emitted from a Penning discharge

N. Ogiwara; M. Maeno

J. Vac. Sci. Technol. A 7, 2804–2807 (1989) https://doi.org/10.1116/1.576184

Abstract

View articletitled, Hydrogen pressure measurement using the intensity of the light emitted from a Penning discharge

Open the PDF for in another window

A new type of instrumentation designed for the study of chemical reactions on single‐crystal surfaces

Taro Yamada; Takashi Misono; Ken‐ichi Tanaka; Yoshitada Murata

J. Vac. Sci. Technol. A 7, 2808–2812 (1989) https://doi.org/10.1116/1.576185

Abstract

View articletitled, A new type of instrumentation designed for the study of chemical reactions on single‐crystal surfaces

Open the PDF for in another window

A bolt‐on deposition source for ultrahigh vacuum growth of intermetallic compound films

David K. Shuh; Young K. Kim; R. Stanley Williams

J. Vac. Sci. Technol. A 7, 2813–2814 (1989) https://doi.org/10.1116/1.576186

Abstract

View articletitled, A bolt‐on deposition source for ultrahigh vacuum growth of intermetallic compound films

Open the PDF for in another window

Single‐board computer low‐energy electron diffraction intensity measuring apparatus

Ye‐liang Shan; Qing‐hua Liu; Jia‐ho Lu; Si‐min Cai

J. Vac. Sci. Technol. A 7, 2814–2817 (1989) https://doi.org/10.1116/1.576187

Abstract

View articletitled, Single‐board computer low‐energy electron diffraction intensity measuring apparatus

Open the PDF for in another window

An effective liquid‐nitrogen feeder for a narrow single inlet

Yoshiharu Ishibashi; Kazunori Irikura; Hidenori Matsuzawa

J. Vac. Sci. Technol. A 7, 2818 (1989) https://doi.org/10.1116/1.576188

View articletitled, An effective liquid‐nitrogen feeder for a narrow single inlet

Open the PDF for in another window

Lubrication of Viton O‐rings in ultrahigh vacuum rotary feedthroughs

E. Puckrin; J. K. Fowler; A. J. Slavin

J. Vac. Sci. Technol. A 7, 2818 (1989) https://doi.org/10.1116/1.576189

View articletitled, Lubrication of Viton O‐rings in ultrahigh vacuum rotary feedthroughs

Open the PDF for in another window

Imaging and analysis of surfaces with high spatial resolution

J. M. Cowley

J. Vac. Sci. Technol. A 7, 2823–2828 (1989) https://doi.org/10.1116/1.576153

Abstract

View articletitled, Imaging and analysis of surfaces with high spatial resolution

Open the PDF for in another window

Structural and dynamical consequences of interactions in interfacial systems

Uzi Landman; W. D. Luedtke; M. W. Ribarsky

J. Vac. Sci. Technol. A 7, 2829–2839 (1989) https://doi.org/10.1116/1.576154

Abstract

View articletitled, Structural and dynamical consequences of interactions in interfacial systems

Open the PDF for in another window

Scanning tunneling microscopy of ion impacts on semiconductor surfaces

I. H. Wilson; N. J. Zheng; U. Knipping; I. S. T. Tsong

J. Vac. Sci. Technol. A 7, 2840–2844 (1989) https://doi.org/10.1116/1.576155

Abstract

View articletitled, Scanning tunneling microscopy of ion impacts on semiconductor surfaces

Open the PDF for in another window

Studies of individual nanometer‐sized metallic clusters using scanning tunneling microscopy, field emission, and field ion microscopy

T. Castro; Y. Z. Li; R. Reifenberger; E. Choi; S. B. Park; R. P. Andres

J. Vac. Sci. Technol. A 7, 2845–2849 (1989) https://doi.org/10.1116/1.576156

Abstract

View articletitled, Studies of individual nanometer‐sized metallic clusters using scanning tunneling microscopy, field emission, and field ion microscopy

Open the PDF for in another window

Vitreous ice as a cryoprotectant for imaging atom‐probe studies of adsorption phenomena at a solid–liquid interface

J. A. Panitz

J. Vac. Sci. Technol. A 7, 2850–2853 (1989) https://doi.org/10.1116/1.576157

Abstract

View articletitled, Vitreous ice as a cryoprotectant for imaging atom‐probe studies of adsorption phenomena at a solid–liquid interface

Open the PDF for in another window

Determination of the local electronic structure of atomic‐sized defects on Si(001) by tunneling spectroscopy

R. J. Hamers; U. K. Köhler

J. Vac. Sci. Technol. A 7, 2854–2859 (1989) https://doi.org/10.1116/1.576158

Abstract

View articletitled, Determination of the local electronic structure of atomic‐sized defects on Si(001) by tunneling spectroscopy

Open the PDF for in another window

Scanning tunneling microscopy study of low‐temperature epitaxial growth of silicon on Si(111)‐(7×7)

U. Köhler; J. E. Demuth; R. J. Hamers

J. Vac. Sci. Technol. A 7, 2860–2867 (1989) https://doi.org/10.1116/1.576159

Abstract

View articletitled, Scanning tunneling microscopy study of low‐temperature epitaxial growth of silicon on Si(111)‐(7×7)

Open the PDF for in another window

Structure of Cs on GaAs(110) as determined by scanning tunneling microscopy

P. N. First; R. A. Dragoset; Joseph A. Stroscio; R. J. Celotta; R. M. Feenstra

J. Vac. Sci. Technol. A 7, 2868–2872 (1989) https://doi.org/10.1116/1.576160

Abstract

View articletitled, Structure of Cs on GaAs(110) as determined by scanning tunneling microscopy

Open the PDF for in another window

Structural and electronic properties of Ag/Si(111) and Au/Si(111) surfaces

K. Markert; P. Pervan; W. Heichler; K. Wandelt

J. Vac. Sci. Technol. A 7, 2873–2878 (1989) https://doi.org/10.1116/1.576161

Abstract

View articletitled, Structural and electronic properties of Ag/Si(111) and Au/Si(111) surfaces

Open the PDF for in another window

Atomic force microscopy of layered compounds

R. G. Miller; P. J. Bryant

J. Vac. Sci. Technol. A 7, 2879–2881 (1989) https://doi.org/10.1116/1.576162

Abstract

View articletitled, Atomic force microscopy of layered compounds

Open the PDF for in another window

The determination of structure in small supported metal particles by scanning transmission electron diffraction

H. Poppa; R. D. Moorhead; M. Avalos‐Borja

J. Vac. Sci. Technol. A 7, 2882–2889 (1989) https://doi.org/10.1116/1.576163

Abstract

View articletitled, The determination of structure in small supported metal particles by scanning transmission electron diffraction

Open the PDF for in another window

Scanning tunneling microscopy of biopolymers: Conditions for microtubule stabilization

Stuart R. Hameroff; Jovana Simić‐Krstić; Murray F. Kelley; Mark A. Voelker; Jackson D. He; Eustace L. Dereniak; Robert S. McCuskey; Conrad W. Schneiker

J. Vac. Sci. Technol. A 7, 2890–2894 (1989) https://doi.org/10.1116/1.576164

Abstract

View articletitled, Scanning tunneling microscopy of biopolymers: Conditions for microtubule stabilization

Open the PDF for in another window

The use of a linear piezoelectric actuator for coarse motion in a vacuum compatible scanning tunneling microscope

Gary W. Stupian; Martin S. Leung

J. Vac. Sci. Technol. A 7, 2895–2897 (1989) https://doi.org/10.1116/1.576165

Abstract

View articletitled, The use of a linear piezoelectric actuator for coarse motion in a vacuum compatible scanning tunneling microscope

Open the PDF for in another window

Scanning tunneling microscopy of the intergrowth tungsten bronze Rb_0.05WO₃

Michael L. Norton; J. G. Mantovani; R. J. Warmack

J. Vac. Sci. Technol. A 7, 2898–2900 (1989) https://doi.org/10.1116/1.576166

Abstract

View articletitled, Scanning tunneling microscopy of the intergrowth tungsten bronze Rb0.05WO3

Open the PDF for in another window

Scanning tunneling microscopy studies of structural disorder and steps on Si surfaces

B. S. Swartzentruber; Y.‐W. Mo; M. B. Webb; M. G. Lagally

J. Vac. Sci. Technol. A 7, 2901–2905 (1989) https://doi.org/10.1116/1.576167

Abstract

View articletitled, Scanning tunneling microscopy studies of structural disorder and steps on Si surfaces

Open the PDF for in another window

Measuring the nanomechanical properties and surface forces of materials using an atomic force microscope

Nancy A. Burnham; Richard J. Colton

J. Vac. Sci. Technol. A 7, 2906–2913 (1989) https://doi.org/10.1116/1.576168

Abstract

View articletitled, Measuring the nanomechanical properties and surface forces of materials using an atomic force microscope

Open the PDF for in another window

Interfacial bonding in W/C and W/B₄C multilayers

A. F. Jankowski; L. R. Schrawyer; M. A. Wall; W. W. Craig; R. I. Morales; D. M. Makowiecki

J. Vac. Sci. Technol. A 7, 2914–2918 (1989) https://doi.org/10.1116/1.576169

Abstract

View articletitled, Interfacial bonding in W/C and W/B4C multilayers

Open the PDF for in another window

Issues

RSS

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only