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A multiaperture ion source with adjustable optics to provide well‐collimated, high‐current‐density, low‐ to medium‐energy ion beams
J. Vac. Sci. Technol. A 7, 125–131 (1989)
https://doi.org/10.1116/1.575740
Friction and wear properties of thin films of carbon with diamond structure prepared by ionized deposition
J. Vac. Sci. Technol. A 7, 132–135 (1989)
https://doi.org/10.1116/1.575741
Hydrogen dissociation and incorporation into amorphous silicon produced by electron beam evaporation
J. Vac. Sci. Technol. A 7, 136–143 (1989)
https://doi.org/10.1116/1.575742
Experimental and calculated radial pressure gradients in reactive sputter processes
J. Vac. Sci. Technol. A 7, 144–150 (1989)
https://doi.org/10.1116/1.575743
Process for large‐scale production of magneto‐optical disks
J. Vac. Sci. Technol. A 7, 170–175 (1989)
https://doi.org/10.1116/1.575748
Determination of the power and current densities in argon and oxygen plasmas by in situ temperature measurements
J. Vac. Sci. Technol. A 7, 189–194 (1989)
https://doi.org/10.1116/1.575750
Plasma polymerization by magnetron glow discharge. I. Effect of magnetic field on breakdown of monomers in low pressure
J. Vac. Sci. Technol. A 7, 195–201 (1989)
https://doi.org/10.1116/1.575751
Internal stress minimization in the fabrication of transmissive multilayer x‐ray optics
J. Vac. Sci. Technol. A 7, 210–213 (1989)
https://doi.org/10.1116/1.576120
Neutral gas desorption and photoelectric emission from aluminum alloy vacuum chambers exposed to synchrotron radiation
J. Vac. Sci. Technol. A 7, 223–229 (1989)
https://doi.org/10.1116/1.576123
Electron stimulated desorption of oxygen from, and subsequent type conversion of, thin‐film p‐CuInSe2
J. Vac. Sci. Technol. A 7, 230–233 (1989)
https://doi.org/10.1116/1.576124
The characterization of an imaging time‐of‐flight secondary ion mass spectrometry instrument
J. Vac. Sci. Technol. A 7, 234–244 (1989)
https://doi.org/10.1116/1.576125
Characterization of CdTe polycrystalline films by x‐ray photoelectron and Auger spectroscopies
O. Zelaya; F. Sánchez‐Sinencio; J. González‐Hernández; J. L. Peña; M. H. Farías; L. Cota‐Araiza; G. A. Hirata; F. Rábago
J. Vac. Sci. Technol. A 7, 245–248 (1989)
https://doi.org/10.1116/1.576126
Comparison of M‐region x‐ray and Auger electron spectra for near‐threshold electron excitation of metallic and oxidized lanthanum
J. Vac. Sci. Technol. A 7, 249–252 (1989)
https://doi.org/10.1116/1.576127
Standard relationships in the properties of Hg1−xCdxTe
J. Vac. Sci. Technol. A 7, 271–275 (1989)
https://doi.org/10.1116/1.576110
The organometallic epitaxy of extrinsic p‐doped HgCdTe
J. Vac. Sci. Technol. A 7, 281–284 (1989)
https://doi.org/10.1116/1.576112
A study of the structure and electrical properties of CdxHg1−xTe grown by metalorganic vapor phase epitaxy (interdiffused multilayer process)
S. J. C. Irvine; J. S. Gough; J. Giess; M. J. Gibbs; A. Royle; C. A. Taylor; G. T. Brown; A. M. Keir; J. B. Mullin
J. Vac. Sci. Technol. A 7, 285–290 (1989)
https://doi.org/10.1116/1.576113
Dislocations in Hg1−xCdxTe/Al2O3(sapphire) grown by metalorganic chemical vapor deposition
J. Vac. Sci. Technol. A 7, 291–294 (1989)
https://doi.org/10.1116/1.576114
A new fast‐response Hg vapor source for HgCdTe molecular‐beam epitaxy growth
J. Vac. Sci. Technol. A 7, 295–299 (1989)
https://doi.org/10.1116/1.576115
Properties of HgCdTe films and Hg‐based quantum well structures grown by photoassisted molecular‐beam epitaxy
T. H. Myers; R. W. Yanka; K. A. Harris; A. R. Reisinger; J. Han; S. Hwang; Z. Yang; N. C. Giles; J. W. Cook, Jr.; J. F. Schetzina; R. W. Green; S. McDevitt
J. Vac. Sci. Technol. A 7, 300–304 (1989)
https://doi.org/10.1116/1.576116
Modulation‐doped HgCdTe
Jeong W. Han; S. Hwang; Y. Lansari; R. L. Harper; Z. Yang; N. C. Giles; J. W. Cook, Jr.; J. F. Schetzina; S. Sen
J. Vac. Sci. Technol. A 7, 305–310 (1989)
https://doi.org/10.1116/1.576117
Electrical properties of intrinsic p‐type shallow levels in HgCdTe grown by molecular‐beam epitaxy in the (111)B orientation
J. Vac. Sci. Technol. A 7, 311–313 (1989)
https://doi.org/10.1116/1.576118
Evidence of anomalous behavior in low‐n‐type mercury cadmium telluride induced by extended defects
J. Vac. Sci. Technol. A 7, 314–320 (1989)
https://doi.org/10.1116/1.576131
Study of CdTe(111)B epilayers grown by molecular‐beam epitaxy
J. Vac. Sci. Technol. A 7, 326–330 (1989)
https://doi.org/10.1116/1.576097
Metalorganic chemical vapor deposition growth of Cd1−yZnyTe epitaxial layers on GaAs and GaAs/Si substrates
W. L. Ahlgren; S. M. Johnson; E. J. Smith; R. P. Ruth; B. C. Johnston; M. H. Kalisher; C. A. Cockrum; T. W. James; D. L. Arney; C. K. Ziegler; W. Lick
J. Vac. Sci. Technol. A 7, 331–337 (1989)
https://doi.org/10.1116/1.576098
Interstitial total energies and diffusion barriers in Hg1−xCdxTe
J. Vac. Sci. Technol. A 7, 354–359 (1989)
https://doi.org/10.1116/1.576102
Novel band‐tuning effects in Hg‐based quantum structures by external electric or magnetic fields
J. Vac. Sci. Technol. A 7, 360–364 (1989)
https://doi.org/10.1116/1.576103
Nonlinear optical coefficients of Hg‐based superlattices
E. R. Youngdale; C. A. Hoffman; J. R. Meyer; F. J. Bartoli; X. Chu; J. P. Faurie; J. W. Han; J. W. Cook, Jr.; J. F. Schetzina
J. Vac. Sci. Technol. A 7, 365–369 (1989)
https://doi.org/10.1116/1.576104
Nonlinear magneto‐optical spectroscopy of Hg1−xCdxTe by two‐photon absorption techniques
J. Vac. Sci. Technol. A 7, 370–376 (1989)
https://doi.org/10.1116/1.576105
Space‐charge‐limited currents in molecular‐beam epitaxy grown CdTe
J. Vac. Sci. Technol. A 7, 377–380 (1989)
https://doi.org/10.1116/1.576106
Magnetic field effects on trap‐assisted tunneling in Hg0.78Cd0.22Te metal‐insulator semiconductor capacitors
J. Vac. Sci. Technol. A 7, 381–386 (1989)
https://doi.org/10.1116/1.576107
Thermal annealing studies on boron‐implanted HgCdTe diodes
J. Vac. Sci. Technol. A 7, 396–403 (1989)
https://doi.org/10.1116/1.576191
Band‐edge properties of Hg‐based superlattices
J. Vac. Sci. Technol. A 7, 404–410 (1989)
https://doi.org/10.1116/1.576192
Magneto‐optical properties of a small‐gap HgTe/CdTe superlattice
J. Vac. Sci. Technol. A 7, 411–414 (1989)
https://doi.org/10.1116/1.576193
HgTe/CdTe superlattice band calculation with a transfer matrix method
J. Vac. Sci. Technol. A 7, 415–419 (1989)
https://doi.org/10.1116/1.576194
The effect of a valence‐band offset on potential and current distributions in HgCdTe heterostructures
J. Vac. Sci. Technol. A 7, 420–423 (1989)
https://doi.org/10.1116/1.576195
A possible resolution of the valence‐band offset controversy in HgTe/CdTe superlattices
J. Vac. Sci. Technol. A 7, 424–426 (1989)
https://doi.org/10.1116/1.576196
Temperature‐dependent photoemission study of the HgTe–CdTe valence‐band discontinuity
R. Sporken; S. Sivananthan; J. P. Faurie; D. H. Ehlers; J. Fraxedas; L. Ley; J. J. Pireaux; R. Caudano
J. Vac. Sci. Technol. A 7, 427–430 (1989)
https://doi.org/10.1116/1.576197
Hg1−xCdxTe based quantum wells for the 3‐μm wavelength region
R. D. Feldman; C. L. Cesar; M. N. Islam; R. F. Austin; A. E. DiGiovanni; J. Shah; R. Spitzer; J. Orenstein
J. Vac. Sci. Technol. A 7, 431–434 (1989)
https://doi.org/10.1116/1.576198
Impurity doping of HgTe–CdTe superlattices during growth by molecular‐beam epitaxy
J. Vac. Sci. Technol. A 7, 435–439 (1989)
https://doi.org/10.1116/1.576199
Low‐level extrinsic doping for p‐ and n‐type (100) HgCdTe grown by molecular‐beam epitaxy
J. Vac. Sci. Technol. A 7, 440–444 (1989)
https://doi.org/10.1116/1.576200
Long‐wavelength infrared detectors based on strained InAs–Ga1−xInxSb type‐II superlattices
J. Vac. Sci. Technol. A 7, 445–449 (1989)
https://doi.org/10.1116/1.576201
Effects of anodic fluoro‐oxide on the thermal stability of Hg1−xCdxTe photoconductive arrays
J. Vac. Sci. Technol. A 7, 460–463 (1989)
https://doi.org/10.1116/1.576203
The interface chemistry of HgCdTe passivated with native sulfide layers grown from nonaqueous and aqueous polysulfide solutions
J. Vac. Sci. Technol. A 7, 469–473 (1989)
https://doi.org/10.1116/1.576205
Physical and chemical properties of the anodic oxide/HgCdTe interface
J. Vac. Sci. Technol. A 7, 474–482 (1989)
https://doi.org/10.1116/1.576206
Fermi‐level movement at metal/HgCdTe contacts formed at low temperature
J. Vac. Sci. Technol. A 7, 483–488 (1989)
https://doi.org/10.1116/1.576207
Interdiffusion, interfacial state formation, and band bending at metal/CdTe interfaces
J. Vac. Sci. Technol. A 7, 489–493 (1989)
https://doi.org/10.1116/1.576208
CdTe and ZnTe metal interface formation and Fermi‐level pinning
J. Vac. Sci. Technol. A 7, 494–498 (1989)
https://doi.org/10.1116/1.576209
Reactions at the interface of metal/HgCdTe oxide
J. Vac. Sci. Technol. A 7, 499–502 (1989)
https://doi.org/10.1116/1.576210
Etch pit study of dislocation formation in Hg1−xCdxTe during array hybridization and its effect on device performance
J. Vac. Sci. Technol. A 7, 503–508 (1989)
https://doi.org/10.1116/1.576211
Improved structural quality of molecular‐beam epitaxy HgCdTe films
J. Vac. Sci. Technol. A 7, 517–522 (1989)
https://doi.org/10.1116/1.576213
Effects of defects on metal‐insulator semiconductor properties of molecular‐beam epitaxy grown HgCdTe
J. Vac. Sci. Technol. A 7, 523–527 (1989)
https://doi.org/10.1116/1.576214
1/f noise characterization of n+–p and n–i–p Hg1−xCdxTe detectors
J. Vac. Sci. Technol. A 7, 550–554 (1989)
https://doi.org/10.1116/1.576218
Perspective on improving the quality of surface and material data analysis in the scientific literature with a focus on x-ray photoelectron spectroscopy (XPS)
George H. Major, Joshua W. Pinder, et al.
Low-resistivity molybdenum obtained by atomic layer deposition
Kees van der Zouw, Bernhard Y. van der Wel, et al.
Machine-learning-enabled on-the-fly analysis of RHEED patterns during thin film deposition by molecular beam epitaxy
Tiffany C. Kaspar, Sarah Akers, et al.