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Low‐energy hydrogen ion bombardment damage in silicon: An in situ optical investigation

J. Vac. Sci. Technol. A 5, 2797–2803 (1987) https://doi.org/10.1116/1.574310

View articletitled, Low‐energy hydrogen ion bombardment damage in silicon: An in situ optical investigation

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Electron energy‐loss studies on radio frequency sputtered a‐Ge_1−xC_x:H films

R. Shinar; J. Shinar; H.‐S. Wu; H. R. Shanks

J. Vac. Sci. Technol. A 5, 2804–2808 (1987) https://doi.org/10.1116/1.574311

Abstract

View articletitled, Electron energy‐loss studies on radio frequency sputtered a‐Ge1−xCx:H films

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The C KLL first‐derivative x‐ray photoelectron spectroscopy spectra as a fingerprint of the carbon state and the characterization of diamondlike carbon films

Yusuke Mizokawa; Tatsuro Miyasato; Shogo Nakamura; Kent M. Geib; Carl W. Wilmsen

J. Vac. Sci. Technol. A 5, 2809–2813 (1987) https://doi.org/10.1116/1.574312

Abstract

View articletitled, The C KLL first‐derivative x‐ray photoelectron spectroscopy spectra as a fingerprint of the carbon state and the characterization of diamondlike carbon films

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Electron beam effects in the analysis of compound semiconductors and devices

L. L. Kazmerski; N. A. Burnham; A. B. Swartzlander; A. J. Nelson; S. E. Asher

J. Vac. Sci. Technol. A 5, 2814–2818 (1987) https://doi.org/10.1116/1.574313

Abstract

View articletitled, Electron beam effects in the analysis of compound semiconductors and devices

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Mass spectrometric determination of trace oxygen

L. Lieszkovszky; J. Borossay

J. Vac. Sci. Technol. A 5, 2819–2822 (1987) https://doi.org/10.1116/1.574314

Abstract

View articletitled, Mass spectrometric determination of trace oxygen

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Initial stages of growth during boron carbide chemical vapor deposition

Ulf Jansson; Jan‐Otto Carlsson; Bengt Stridh

J. Vac. Sci. Technol. A 5, 2823–2828 (1987) https://doi.org/10.1116/1.574315

Abstract

View articletitled, Initial stages of growth during boron carbide chemical vapor deposition

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Analysis of reactive sputtering mechanisms for NbN film deposition

M. Bhushan

J. Vac. Sci. Technol. A 5, 2829–2835 (1987) https://doi.org/10.1116/1.574316

Abstract

View articletitled, Analysis of reactive sputtering mechanisms for NbN film deposition

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Characteristics of radio frequency silicon carbide films

A. Raveh; A. Inspektor; U. Carmi; R. Avni

J. Vac. Sci. Technol. A 5, 2836–2841 (1987) https://doi.org/10.1116/1.574317

Abstract

View articletitled, Characteristics of radio frequency silicon carbide films

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Ion beam mixing of Al with GaAs

R. Fastow; M. Eizenberg; R. Kalish; V. Richter; R. Brener; M. Peisach

J. Vac. Sci. Technol. A 5, 2842–2844 (1987) https://doi.org/10.1116/1.574318

Abstract

View articletitled, Ion beam mixing of Al with GaAs

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Direct E₀ energy gaps of bismuth‐containing III–V alloys predicted using quantum dielectric theory

S. A. Barnett

J. Vac. Sci. Technol. A 5, 2845–2848 (1987) https://doi.org/10.1116/1.574319

Abstract

View articletitled, Direct E0 energy gaps of bismuth‐containing III–V alloys predicted using quantum dielectric theory

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Mechanism of two‐dimensional AgAu alloy formation on Ru(001)

K. Markert; P. Dolle; J. W. Niemantsverdriet; K. Wandelt

J. Vac. Sci. Technol. A 5, 2849–2853 (1987) https://doi.org/10.1116/1.574320

Abstract

View articletitled, Mechanism of two‐dimensional AgAu alloy formation on Ru(001)

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Correlation between resistance behavior and mass transport in Al–Si/Ti multilayer interconnects

M. Finetti; I. Suni; A. Armigliato; A. Garulli; A. Scorzoni

J. Vac. Sci. Technol. A 5, 2854–2858 (1987) https://doi.org/10.1116/1.574254

Abstract

View articletitled, Correlation between resistance behavior and mass transport in Al–Si/Ti multilayer interconnects

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Effect of negative substrate bias on the film structure and magnetic properties in sputter‐deposited Co–Cr films

Masatoshi Ohkoshi; Tetsuzo Kusuda

J. Vac. Sci. Technol. A 5, 2859–2863 (1987) https://doi.org/10.1116/1.574255

Abstract

View articletitled, Effect of negative substrate bias on the film structure and magnetic properties in sputter‐deposited Co–Cr films

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Compositional variations in doped iron oxide magnetic thin films

B. Hermsmeier; C. R. Brundle; J. E. E. Baglin

J. Vac. Sci. Technol. A 5, 2864–2868 (1987) https://doi.org/10.1116/1.574256

Abstract

View articletitled, Compositional variations in doped iron oxide magnetic thin films

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Dense crystalline ZrO₂ thin films deposited by pulsed‐laser evaporation

H. Sankur; J. DeNatale; W. Gunning; J. G. Nelson

J. Vac. Sci. Technol. A 5, 2869–2874 (1987) https://doi.org/10.1116/1.574257

Abstract

View articletitled, Dense crystalline ZrO2 thin films deposited by pulsed‐laser evaporation

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Pyroelectric calorimeter for photothermal studies of thin films and adsorbates

Hans J. Coufal; Robert K. Grygier; Donald E. Horne; Jacob E. Fromm

J. Vac. Sci. Technol. A 5, 2875–2889 (1987) https://doi.org/10.1116/1.574258

Abstract

View articletitled, Pyroelectric calorimeter for photothermal studies of thin films and adsorbates

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Adhesion of titanium thin film to oxide substrates

Y.‐H. Kim; Y. S. Chaug; N. J. Chou; J. Kim

J. Vac. Sci. Technol. A 5, 2890–2893 (1987) https://doi.org/10.1116/1.574259

Abstract

View articletitled, Adhesion of titanium thin film to oxide substrates

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Thermal stability of metal films on polyimide

Kartik Shanker; Jack R. MacDonald

J. Vac. Sci. Technol. A 5, 2894–2897 (1987) https://doi.org/10.1116/1.574260

Abstract

View articletitled, Thermal stability of metal films on polyimide

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The effect of gas scattering on the deposition profile of optical thin films

G. L. Hansen; R. G. Ahonen

J. Vac. Sci. Technol. A 5, 2898–2901 (1987) https://doi.org/10.1116/1.574261

Abstract

View articletitled, The effect of gas scattering on the deposition profile of optical thin films

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Effect of baking temperature and air exposure on the outgassing rate of type 316L stainless steel

K. Odaka; Y. Ishikawa; M. Furuse

J. Vac. Sci. Technol. A 5, 2902–2906 (1987) https://doi.org/10.1116/1.574262

Abstract

View articletitled, Effect of baking temperature and air exposure on the outgassing rate of type 316L stainless steel

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Movable needle type of liquid‐metal‐ion sources for boron and phosphorus ions

T. Ishitani; K. Umemura; T. Aida

J. Vac. Sci. Technol. A 5, 2907–2911 (1987) https://doi.org/10.1116/1.574263

Abstract

View articletitled, Movable needle type of liquid‐metal‐ion sources for boron and phosphorus ions

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Formation of (M+Me)^± ions from ultrahigh‐vacuum‐prepared amino acid layers on metals

D. Holtkamp; M. Kempken; P. Klüsener; A. Benninghoven

J. Vac. Sci. Technol. A 5, 2912–2916 (1987) https://doi.org/10.1116/1.574264

Abstract

View articletitled, Formation of (M+Me)± ions from ultrahigh‐vacuum‐prepared amino acid layers on metals

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Thin‐film temperature sensors deposited by radio frequency cathodic sputtering

J. C. Godefroy; C. Gageant; D. François; M. Portat

J. Vac. Sci. Technol. A 5, 2917–2923 (1987) https://doi.org/10.1116/1.574265

Abstract

View articletitled, Thin‐film temperature sensors deposited by radio frequency cathodic sputtering

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Separation of gas phase and electron‐stimulated‐desorption ions in the modulated‐ion‐current pressure gauge

F. Watanabe; H. Ishimaru

J. Vac. Sci. Technol. A 5, 2924–2926 (1987) https://doi.org/10.1116/1.574266

Abstract

View articletitled, Separation of gas phase and electron‐stimulated‐desorption ions in the modulated‐ion‐current pressure gauge

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Investigation of trapped ions with a clearing electrode

Yoshikazu Miyahara

J. Vac. Sci. Technol. A 5, 2927–2929 (1987) https://doi.org/10.1116/1.574267

Abstract

View articletitled, Investigation of trapped ions with a clearing electrode

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Tribological coatings for nuclear applications in the United Kingdom

M. W. J. Lewis

J. Vac. Sci. Technol. A 5, 2930–2940 (1987) https://doi.org/10.1116/1.574268

Abstract

View articletitled, Tribological coatings for nuclear applications in the United Kingdom

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Analysis of forces on inertial confinement fusion targets during ablation layer coating

S. M. Gracewski; R. Q. Gram

J. Vac. Sci. Technol. A 5, 2941–2944 (1987) https://doi.org/10.1116/1.574269

Abstract

View articletitled, Analysis of forces on inertial confinement fusion targets during ablation layer coating

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Dynamic pumping and pulsed outgassing in waveguides and vacuum systems for plasma physics experiments

G. Melin

J. Vac. Sci. Technol. A 5, 2945–2953 (1987) https://doi.org/10.1116/1.574270

Abstract

View articletitled, Dynamic pumping and pulsed outgassing in waveguides and vacuum systems for plasma physics experiments

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Radioluminescence of individual deuterium–tritium‐filled glass microbubble laser targets

G. H. Smith; P. C. Souers; E. M. Fearon; R. T. Tsugawa; D. H. Darling

J. Vac. Sci. Technol. A 5, 2954–2956 (1987) https://doi.org/10.1116/1.574271

Abstract

View articletitled, Radioluminescence of individual deuterium–tritium‐filled glass microbubble laser targets

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High‐efficiency single‐wafer sputter etching device

K. Wellerdieck

J. Vac. Sci. Technol. A 5, 2957–2958 (1987) https://doi.org/10.1116/1.574272

Abstract

View articletitled, High‐efficiency single‐wafer sputter etching device

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Kinetics and dynamics of the nitric oxide/ammonia interaction on Pt(111)

D. Burgess, Jr.; D. S. King; R. R. Cavanagh

J. Vac. Sci. Technol. A 5, 2959–2960 (1987) https://doi.org/10.1116/1.574273

Abstract

View articletitled, Kinetics and dynamics of the nitric oxide/ammonia interaction on Pt(111)

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Direct recoil analysis of light elements (H, C, O, N) on polyimide surfaces (poly‐Isoindolo quinazoline dione)

H. K. Schmidt; J. A. Schultz; S. Tachi; S. Contarini; S. Adura; J. W. Rabalais; J. L. Margrave

J. Vac. Sci. Technol. A 5, 2961–2962 (1987) https://doi.org/10.1116/1.574274

View articletitled, Direct recoil analysis of light elements (H, C, O, N) on polyimide surfaces (poly‐Isoindolo quinazoline dione)

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Conversion tables for pressure and leak rates

Timothy A. Moss

J. Vac. Sci. Technol. A 5, 2962–2965 (1987) https://doi.org/10.1116/1.574275

Abstract

View articletitled, Conversion tables for pressure and leak rates

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The pumping character of the magnetic suspension‐type turbomolecular pump of high flow rate

Tadao Ishizawa; Masaharu Miki; Chiaki Urano; Toshiaki Kawashima; Masayuki Yamamoto; Noriaki Masubuchi

J. Vac. Sci. Technol. A 5, 2965–2967 (1987) https://doi.org/10.1116/1.574232

Abstract

View articletitled, The pumping character of the magnetic suspension‐type turbomolecular pump of high flow rate

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Measurements of first‐wall erosion in the TEXTOR tokamak

R. A. Zuhr; K. G. Tschersich

J. Vac. Sci. Technol. A 5, 2967–2969 (1987) https://doi.org/10.1116/1.574233

View articletitled, Measurements of first‐wall erosion in the TEXTOR tokamak

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A flexible sample transfer/insertion system for ultrahigh vacuum surface studies

G. S. Chottiner; W. D. Jennings; K. I. Pandya

J. Vac. Sci. Technol. A 5, 2970–2972 (1987) https://doi.org/10.1116/1.574234

View articletitled, A flexible sample transfer/insertion system for ultrahigh vacuum surface studies

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A simple and inexpensive ion beam sputter deposition system

Greg Gillen; Robert M. Thomas; Peter Williams

J. Vac. Sci. Technol. A 5, 2972–2973 (1987) https://doi.org/10.1116/1.574235

View articletitled, A simple and inexpensive ion beam sputter deposition system

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A simple and versatile ultrahigh vacuum leak‐tight infrared window assembly

C. Damerow; W. Erley

J. Vac. Sci. Technol. A 5, 2974 (1987) https://doi.org/10.1116/1.574236

View articletitled, A simple and versatile ultrahigh vacuum leak‐tight infrared window assembly

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A simple technique for low‐energy electron diffraction studies of beam‐sensitive samples

Victor M. Bermudez

J. Vac. Sci. Technol. A 5, 2975–2976 (1987) https://doi.org/10.1116/1.574237

View articletitled, A simple technique for low‐energy electron diffraction studies of beam‐sensitive samples

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A short, flexible ultrahigh vacuum thermal and electrical conductor

G. L. Fowler

J. Vac. Sci. Technol. A 5, 2976–2977 (1987) https://doi.org/10.1116/1.574238

Abstract

View articletitled, A short, flexible ultrahigh vacuum thermal and electrical conductor

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Diamondlike carbon high‐temperature diffusion barrier for copper‐gasketed stainless‐steel flanges

A. R. Nyaiesh; E. L. Garwin; E. W. Hoyt

J. Vac. Sci. Technol. A 5, 2977 (1987) https://doi.org/10.1116/1.574239

Abstract

View articletitled, Diamondlike carbon high‐temperature diffusion barrier for copper‐gasketed stainless‐steel flanges

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Reliable, low‐profile banding of electrical leads in high‐vacuum systems

G. L. Fowler

J. Vac. Sci. Technol. A 5, 2978 (1987) https://doi.org/10.1116/1.574240

Abstract

View articletitled, Reliable, low‐profile banding of electrical leads in high‐vacuum systems

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Spinning rotor gauge carousel

P. R. Breakwell; P. J. Nash

J. Vac. Sci. Technol. A 5, 2979 (1987) https://doi.org/10.1116/1.574241

View articletitled, Spinning rotor gauge carousel

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Sample rotating in Auger electron spectroscopy depth profiling

A. Zalar

J. Vac. Sci. Technol. A 5, 2979–2980 (1987) https://doi.org/10.1116/1.574242

View articletitled, Sample rotating in Auger electron spectroscopy depth profiling

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A constant flow electropolishing wand

G. L. Fowler

J. Vac. Sci. Technol. A 5, 2981 (1987) https://doi.org/10.1116/1.574243

Abstract

View articletitled, A constant flow electropolishing wand

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Computer program for photoemission data analysis and display

P. H. Mahowald; D. J. Friedman; G. P. Carey; K. A. Bertness; J. J. Yeh

J. Vac. Sci. Technol. A 5, 2982–2985 (1987) https://doi.org/10.1116/1.574244

Abstract

View articletitled, Computer program for photoemission data analysis and display

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Erratum: Application of glow discharge mass spectrometry and sputtered neutral mass spectrometry to materials characterization [J. Vac. Sci. Technol. A 5, 295 (1987)]

Paul K. Chu; John C. Huneke; Richard J. Blattner

J. Vac. Sci. Technol. A 5, 2986 (1987) https://doi.org/10.1116/1.574245

View articletitled, Erratum: Application of glow discharge mass spectrometry and sputtered neutral mass spectrometry to materials characterization [J. Vac. Sci. Technol. A 5, 295 (1987)]

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Band structure and electronic properties of mercury chalcogenide alloys containing iron

R. Reifenberger; J. Kossut

J. Vac. Sci. Technol. A 5, 2995–3002 (1987) https://doi.org/10.1116/1.574246

Abstract

View articletitled, Band structure and electronic properties of mercury chalcogenide alloys containing iron

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Extended x‐ray absorption fine‐structure studies of semiconductor structure

Bruce A. Bunker

J. Vac. Sci. Technol. A 5, 3003–3008 (1987) https://doi.org/10.1116/1.574247

Abstract

View articletitled, Extended x‐ray absorption fine‐structure studies of semiconductor structure

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Vacancy formation energies in II–VI semiconductors

M. A. Berding; A. Sher; A.‐B. Chen

J. Vac. Sci. Technol. A 5, 3009–3013 (1987) https://doi.org/10.1116/1.574248

Abstract

View articletitled, Vacancy formation energies in II–VI semiconductors

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Electronic and transport properties of HgCdTe and HgZnTe

M. A. Berding; S. Krishnamurthy; A. Sher; A.‐B. Chen

J. Vac. Sci. Technol. A 5, 3014–3018 (1987) https://doi.org/10.1116/1.574249

Abstract

View articletitled, Electronic and transport properties of HgCdTe and HgZnTe

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Bond relaxation in Hg_1−xCd_xTe and related alloys

K. C. Hass; David Vanderbilt

J. Vac. Sci. Technol. A 5, 3019–3023 (1987) https://doi.org/10.1116/1.574250

Abstract

View articletitled, Bond relaxation in Hg1−xCdxTe and related alloys

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Investigation of structural properties of epitaxially grown Hg_0.84Zn_0.16Te under application of hydrostatic pressure

S. B. Qadri; E. F. Skelton; A. W. Webb; M. W. Schaefer; J. H. Dinan; D. Chandra; L. Colombo

J. Vac. Sci. Technol. A 5, 3024–3025 (1987) https://doi.org/10.1116/1.574251

Abstract

View articletitled, Investigation of structural properties of epitaxially grown Hg0.84Zn0.16Te under application of hydrostatic pressure

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Angle resolved photoemission study of the alloy scattering effect in Hg₁_−xCd_xTe

C. K. Shih; J. A. Silberman; A. K. Wahi; G. P. Carey; I. Lindau; W. E. Spicer; M. A. Berding; A. Sher

J. Vac. Sci. Technol. A 5, 3026–3030 (1987) https://doi.org/10.1116/1.574252

Abstract

View articletitled, Angle resolved photoemission study of the alloy scattering effect in Hg1−xCdxTe

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Photoemission studies of core level shifts in HgCdTe, CdMnTe, and HgZnTe

C. K. Shih; W. E. Spicer; J. K. Furdyna; A. Sher

J. Vac. Sci. Technol. A 5, 3031–3034 (1987) https://doi.org/10.1116/1.574253

Abstract

View articletitled, Photoemission studies of core level shifts in HgCdTe, CdMnTe, and HgZnTe

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Majority‐carrier mobility in p‐type Hg_1−xCd_xTe

J. R. Meyer; F. J. Bartoli; C. A. Hoffman

J. Vac. Sci. Technol. A 5, 3035–3039 (1987) https://doi.org/10.1116/1.574210

Abstract

View articletitled, Majority‐carrier mobility in p‐type Hg1−xCdxTe

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Free‐carrier spin‐induced Faraday rotation in HgCdTe and HgMnTe

S. Y. Yuen; P. A. Wolff; P. Becla; D. Nelson

J. Vac. Sci. Technol. A 5, 3040–3042 (1987) https://doi.org/10.1116/1.574211

Abstract

View articletitled, Free‐carrier spin‐induced Faraday rotation in HgCdTe and HgMnTe

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Epitaxial growth, characterization, and phase diagram of HgZnTe

E. J. Smith; T. Tung; S. Sen; W. H. Konkel; J. B. James; V. B. Harper; B. F. Zuck; R. A. Cole

J. Vac. Sci. Technol. A 5, 3043–3047 (1987) https://doi.org/10.1116/1.574212

Abstract

View articletitled, Epitaxial growth, characterization, and phase diagram of HgZnTe

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Characterization of fully lattice‐matched multilayer ZnHgCdTe structures grown by Te‐rich liquid phase epitaxy

R. A. Carlson; R. J. Hager; R. A. Wood

J. Vac. Sci. Technol. A 5, 3048–3051 (1987) https://doi.org/10.1116/1.574213

Abstract

View articletitled, Characterization of fully lattice‐matched multilayer ZnHgCdTe structures grown by Te‐rich liquid phase epitaxy

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Dislocations in HgCdTe/CdTe and HgCdTe/CdZnTe heterojunctions

M. Yoshikawa; K. Maruyama; T. Saito; T. Maekawa; H. Takigawa

J. Vac. Sci. Technol. A 5, 3052–3054 (1987) https://doi.org/10.1116/1.574214

Abstract

View articletitled, Dislocations in HgCdTe/CdTe and HgCdTe/CdZnTe heterojunctions

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Analysis of junction depths and lattice point defect interdiffusion coefficients in Hg_0.8Cd_0.2Te

Theodore C. Harman

J. Vac. Sci. Technol. A 5, 3055–3058 (1987) https://doi.org/10.1116/1.574215

Abstract

View articletitled, Analysis of junction depths and lattice point defect interdiffusion coefficients in Hg0.8Cd0.2Te

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Controlled substitutional doping of CdTe thin films grown by photoassisted molecular‐beam epitaxy

R. N. Bicknell; N. C. Giles; J. F. Schetzina; C. Hitzman

J. Vac. Sci. Technol. A 5, 3059–3063 (1987) https://doi.org/10.1116/1.574216

Abstract

View articletitled, Controlled substitutional doping of CdTe thin films grown by photoassisted molecular‐beam epitaxy

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Low‐temperature photoluminescence study of doped CdTe films grown by photoassisted molecular‐beam epitaxy

N. C. Giles; R. N. Bicknell; J. F. Schetzina

J. Vac. Sci. Technol. A 5, 3064–3069 (1987) https://doi.org/10.1116/1.574217

Abstract

View articletitled, Low‐temperature photoluminescence study of doped CdTe films grown by photoassisted molecular‐beam epitaxy

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Determination of the CdTe–HgTe(111) heterojunction valence‐band discontinuity by x‐ray photoemission spectroscopy

R. W. Grant; E. A. Kraut; J. T. Cheung; S. P. Kowalczyk

J. Vac. Sci. Technol. A 5, 3070–3073 (1987) https://doi.org/10.1116/1.574218

Abstract

View articletitled, Determination of the CdTe–HgTe(111) heterojunction valence‐band discontinuity by x‐ray photoemission spectroscopy

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HgTe–CdTe heterojunction valence‐band discontinuity

Jean‐Pierre Faurie; C. Hsu; Tran Minh Duc

J. Vac. Sci. Technol. A 5, 3074–3078 (1987) https://doi.org/10.1116/1.574219

Abstract

View articletitled, HgTe–CdTe heterojunction valence‐band discontinuity

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Quantized Hall effect and weak localization effects in two‐dimensional HgTe–CdTe superlattices

N. P. Ong; John K. Moyle; J. Bajaj; J. T. Cheung

J. Vac. Sci. Technol. A 5, 3079–3084 (1987) https://doi.org/10.1116/1.574220

Abstract

View articletitled, Quantized Hall effect and weak localization effects in two‐dimensional HgTe–CdTe superlattices

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Properties of Hg‐based films and superlattices grown by molecular‐beam epitaxy

K. A. Harris; S. Hwang; Y. Lansari; J. W. Cook, Jr.; J. F. Schetzina; M. Chu

J. Vac. Sci. Technol. A 5, 3085–3088 (1987) https://doi.org/10.1116/1.574221

Abstract

View articletitled, Properties of Hg‐based films and superlattices grown by molecular‐beam epitaxy

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Far‐infrared magnetoabsorption in HgTe–CdTe and Hg_1−xMn_xTe–HgTe superlattices

M. Dobrowolska; Z. Yang; H. Luo; J. K. Furdyna; K. A. Harris; J. W. Cook, Jr.; J. F. Schetzina

J. Vac. Sci. Technol. A 5, 3089–3092 (1987) https://doi.org/10.1116/1.574222

Abstract

View articletitled, Far‐infrared magnetoabsorption in HgTe–CdTe and Hg1−xMnxTe–HgTe superlattices

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Magnetotransport measurements of p‐type Hg_1−xCd_xTe based superlattices and heterojunctions

K. C. Woo; S. Rafol; J. P. Faurie

J. Vac. Sci. Technol. A 5, 3093–3095 (1987) https://doi.org/10.1116/1.574223

Abstract

View articletitled, Magnetotransport measurements of p‐type Hg1−xCdxTe based superlattices and heterojunctions

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Theoretical studies of electronic properties of semimagnetic superlattices in a magnetic field

G. Y. Wu; T. C. McGill; D. L. Smith; C. Mailhiot

J. Vac. Sci. Technol. A 5, 3096–3101 (1987) https://doi.org/10.1116/1.574224

Abstract

View articletitled, Theoretical studies of electronic properties of semimagnetic superlattices in a magnetic field

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Subband related structure in the absorption coefficient of HgTe/CdTe superlattices

E. A. Patten; K. Kosai; T. N. Casselman; J. N. Schulman; Yia‐Chung Chang; J.‐L. Staudenmann

J. Vac. Sci. Technol. A 5, 3102–3106 (1987) https://doi.org/10.1116/1.574225

Abstract

View articletitled, Subband related structure in the absorption coefficient of HgTe/CdTe superlattices

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Summary Abstract: HgTe–CdTe superlattices: Experiment and theoretical band gap and the ease at controlling the cutoff wavelength

J. Reno; I. K. Sou; J. P. Faurie; J. M. Berroir; Y. Guldner

J. Vac. Sci. Technol. A 5, 3107–3109 (1987) https://doi.org/10.1116/1.574226

View articletitled, Summary Abstract: HgTe–CdTe superlattices: Experiment and theoretical band gap and the ease at controlling the cutoff wavelength

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Electrical measurements of molecular‐beam epitaxy HgTe–CdTe superlattices and absorption coefficient analysis of molecular‐beam epitaxy HgTe

M. W. Goodwin; M. A. Kinch; R. J. Koestner; M. C. Chen; D. G. Seiler; R. J. Justice

J. Vac. Sci. Technol. A 5, 3110–3114 (1987) https://doi.org/10.1116/1.574227

Abstract

View articletitled, Electrical measurements of molecular‐beam epitaxy HgTe–CdTe superlattices and absorption coefficient analysis of molecular‐beam epitaxy HgTe

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Far‐infrared magnetospectroscopy of HgTe and Hg_1−xMn_xTe epilayers grown by molecular‐beam epitaxy

H. Luo; M. Dobrowolska; Z. Yang; J. K. Furdyna; K. A. Harris; J. W. Cook, Jr.; J. F. Schetzina

J. Vac. Sci. Technol. A 5, 3115–3118 (1987) https://doi.org/10.1116/1.574228

Abstract

View articletitled, Far‐infrared magnetospectroscopy of HgTe and Hg1−xMnxTe epilayers grown by molecular‐beam epitaxy

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Mercury cadmium telluride n‐isotype heterojunctions grown in situ by molecular‐beam epitaxy

M. Boukerche; I. K. Sou; M. DeSouza; S. S. Yoo; J. P. Faurie

J. Vac. Sci. Technol. A 5, 3119–3123 (1987) https://doi.org/10.1116/1.574229

Abstract

View articletitled, Mercury cadmium telluride n‐isotype heterojunctions grown in situ by molecular‐beam epitaxy

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Interdiffusion and related defect mechanisms in the HgTe–CdTe system

M. F. S. Tang; D. A. Stevenson

J. Vac. Sci. Technol. A 5, 3124–3128 (1987) https://doi.org/10.1116/1.574230

Abstract

View articletitled, Interdiffusion and related defect mechanisms in the HgTe–CdTe system

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Transmission electron microscope study of Hg‐based multilayer structures

N. Otsuka; Y. E. Ihm; K. A. Harris; J. W. Cook, Jr.; J. F. Schetzina

J. Vac. Sci. Technol. A 5, 3129–3132 (1987) https://doi.org/10.1116/1.574231

Abstract

View articletitled, Transmission electron microscope study of Hg‐based multilayer structures

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(100) versus (111)B crystallographic orientation of Hg_1−xCd_xTe grown by molecular‐beam epitaxy

J. M. Arias; S. H. Shin; J. T. Cheung; J. S. Chen; S. Sivananthan; J. Reno; J. P. Faurie

J. Vac. Sci. Technol. A 5, 3133–3138 (1987) https://doi.org/10.1116/1.574853

Abstract

View articletitled, (100) versus (111)B crystallographic orientation of Hg1−xCdxTe grown by molecular‐beam epitaxy

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In situ spectroscopic ellipsometry during molecular‐beam epitaxy of cadmium mercury telluride

Y. Demay; D. Arnoult; J. P. Gailliard; P. Medina

J. Vac. Sci. Technol. A 5, 3139–3142 (1987) https://doi.org/10.1116/1.574854

Abstract

View articletitled, In situ spectroscopic ellipsometry during molecular‐beam epitaxy of cadmium mercury telluride

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The first observation of reflection high‐energy electron diffraction intensity oscillations during the growth and sublimation of CdTe

J. M. Arias; G. Sullivan

J. Vac. Sci. Technol. A 5, 3143–3146 (1987) https://doi.org/10.1116/1.574855

Abstract

View articletitled, The first observation of reflection high‐energy electron diffraction intensity oscillations during the growth and sublimation of CdTe

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Resonant tunneling through a HgTe/Hg_1−xCd_xTe double‐barrier, single‐quantum‐well heterostructure

M. A. Reed; R. J. Koestner; M. W. Goodwin; H. F. Schaake

J. Vac. Sci. Technol. A 5, 3147–3149 (1987) https://doi.org/10.1116/1.574856

Abstract

View articletitled, Resonant tunneling through a HgTe/Hg1−xCdxTe double‐barrier, single‐quantum‐well heterostructure

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III–V strained layer supperlattices for long‐wavelength detector applications: Recent progress

G. C. Osbourn; L. R. Dawson; R. M. Biefeld; T. E. Zipperian; I. J. Fritz; B. L. Doyle

J. Vac. Sci. Technol. A 5, 3150–3152 (1987) https://doi.org/10.1116/1.574857

Abstract

View articletitled, III–V strained layer supperlattices for long‐wavelength detector applications: Recent progress

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HgTe–CdTe superlattices and Hg_1−xCd_xTe grown by low‐temperature metalorganic chemical vapor deposition

P.‐Y. Lu; L. M. Williams; C.‐H. Wang; S. N. G. Chu

J. Vac. Sci. Technol. A 5, 3153–3156 (1987) https://doi.org/10.1116/1.574858

Abstract

View articletitled, HgTe–CdTe superlattices and Hg1−xCdxTe grown by low‐temperature metalorganic chemical vapor deposition

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Far‐infrared analysis of alloy structure in HgTe–CdTe superlattices

S. Perkowitz; R. Sudharsanan; S. S. Yom

J. Vac. Sci. Technol. A 5, 3157–3160 (1987) https://doi.org/10.1116/1.574859

Abstract

View articletitled, Far‐infrared analysis of alloy structure in HgTe–CdTe superlattices

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Thermal stability among HgTe/CdTe, Hg_1−xCd_xTe/CdTe, and Hg_1−xMn_xTe/CdTe superlattices

J.‐L. Staudenmann; R. D. Knox; J.‐P. Faurie

J. Vac. Sci. Technol. A 5, 3161–3165 (1987) https://doi.org/10.1116/1.574860

Abstract

View articletitled, Thermal stability among HgTe/CdTe, Hg1−xCdxTe/CdTe, and Hg1−xMnxTe/CdTe superlattices

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Ion implanted junction formation in Hg_1−xCd_xTe

L. O. Bubulac; W. E. Tennant; D. S. Lo; D. D. Edwall; J. C. Robinson; J. S. Chen; G. Bostrup

J. Vac. Sci. Technol. A 5, 3166–3170 (1987) https://doi.org/10.1116/1.574861

Abstract

View articletitled, Ion implanted junction formation in Hg1−xCdxTe

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Paramagnetic point defects in boron‐implanted Hg_0.7Cd_0.3Te and CdTe

R. C. Bowman, Jr.; E. L. Venturini; S. N. Witt

J. Vac. Sci. Technol. A 5, 3171–3174 (1987) https://doi.org/10.1116/1.574862

Abstract

View articletitled, Paramagnetic point defects in boron‐implanted Hg0.7Cd0.3Te and CdTe

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Use of native oxide and multiple‐step anneals to activate boron implanted Hg_1−xCd_xTe

T.‐M. Kao; T. W. Sigmon; L. O. Bubulac

J. Vac. Sci. Technol. A 5, 3175–3179 (1987) https://doi.org/10.1116/1.574863

Abstract

View articletitled, Use of native oxide and multiple‐step anneals to activate boron implanted Hg1−xCdxTe

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Study of implantation in HgCdTe by electrolyte electroreflectance

P. M. Raccah; J. W. Garland; Z. Zhang; D. Yang; L. O. Bubulac; W. E. Tennant

J. Vac. Sci. Technol. A 5, 3180–3183 (1987) https://doi.org/10.1116/1.574864

Abstract

View articletitled, Study of implantation in HgCdTe by electrolyte electroreflectance

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Summary Abstract: Photoreflectance in narrow‐gap Hg_1−xCd_xTe and Hg_1−yZn_yTe

P. M. Amirtharaj; J. J. Kennedy; P. R. Boyd

J. Vac. Sci. Technol. A 5, 3184–3185 (1987) https://doi.org/10.1116/1.574833

View articletitled, Summary Abstract: Photoreflectance in narrow‐gap Hg1−xCdxTe and Hg1−yZnyTe

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Spatial mapping of electrically active defects in HgCdTe using laser beam‐induced current

J. Bajaj; L. O. Bubulac; P. R. Newman; W. E. Tennant; P. M. Raccah

J. Vac. Sci. Technol. A 5, 3186–3189 (1987) https://doi.org/10.1116/1.574834

Abstract

View articletitled, Spatial mapping of electrically active defects in HgCdTe using laser beam‐induced current

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Systematics of metal contacts to Hg_1−xCd_xTe

D. J. Friedman; G. P. Carey; I. Lindau; W. E. Spicer

J. Vac. Sci. Technol. A 5, 3190–3192 (1987) https://doi.org/10.1116/1.574835

Abstract

View articletitled, Systematics of metal contacts to Hg1−xCdxTe

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Local stoichiometry and atomic interdiffusion during reactive metal/mercury–cadmium–telluride junction formation

A. Wall; A. Raisanen; S. Chang; P. Philip; N. Troullier; A. Franciosi; D. J. Peterman

J. Vac. Sci. Technol. A 5, 3193–3197 (1987) https://doi.org/10.1116/1.574836

Abstract

View articletitled, Local stoichiometry and atomic interdiffusion during reactive metal/mercury–cadmium–telluride junction formation

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Photoemission studies of the room‐temperature Si/Hg_1−xCd_xTe, Si/HgTe, and Si/CdTe interfaces

G. P. Carey; D. J. Friedman; I. Lindau; W. E. Spicer

J. Vac. Sci. Technol. A 5, 3198–3202 (1987) https://doi.org/10.1116/1.574837

Abstract

View articletitled, Photoemission studies of the room‐temperature Si/Hg1−xCdxTe, Si/HgTe, and Si/CdTe interfaces

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Photoemission study of Cd loss and its effect on the electronic structure of etched Hg_1−xCd_xTe surfaces

G. P. Carey; A. K. Wahi; J. A. Silberman; C. M. Stahle; W. E. Spicer; J. A. Wilson

J. Vac. Sci. Technol. A 5, 3203–3206 (1987) https://doi.org/10.1116/1.574838

Abstract

View articletitled, Photoemission study of Cd loss and its effect on the electronic structure of etched Hg1−xCdxTe surfaces

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Characterization of anodic sulfide films on Hg_0.78Cd_0.22Te

R. L. Strong; J. D. Luttmer; D. D. Little; T. H. Teherani; C. R. Helms

J. Vac. Sci. Technol. A 5, 3207–3210 (1987) https://doi.org/10.1116/1.574839

Abstract

View articletitled, Characterization of anodic sulfide films on Hg0.78Cd0.22Te

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Ultrahigh vacuum pressure measurements: Limiting processes

P. A. Redhead

J. Vac. Sci. Technol. A 5, 3215–3223 (1987) https://doi.org/10.1116/1.574840

Abstract

View articletitled, Ultrahigh vacuum pressure measurements: Limiting processes

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Summary Abstract: Electrostatic levitation in vacuum and possible gauge applications

B. R. F. Kendall; D. J. Manzi; L. D. Hinkle; M. F. Vollero

J. Vac. Sci. Technol. A 5, 3224–3225 (1987) https://doi.org/10.1116/1.574841

View articletitled, Summary Abstract: Electrostatic levitation in vacuum and possible gauge applications

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Ultrahigh vacuum measurements in China

Z. Y. Hua

J. Vac. Sci. Technol. A 5, 3226–3229 (1987) https://doi.org/10.1116/1.574842

Abstract

View articletitled, Ultrahigh vacuum measurements in China

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Summary Abstract: Vacuum gauging in the electronics industry

John R. Arthur

J. Vac. Sci. Technol. A 5, 3230–3231 (1987) https://doi.org/10.1116/1.574843

View articletitled, Summary Abstract: Vacuum gauging in the electronics industry

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Summary Abstract: Gauging requirements and practices for storage rings and accelerators

H. J. Halama; H. C. Hseuh

J. Vac. Sci. Technol. A 5, 3232–3233 (1987) https://doi.org/10.1116/1.574844

View articletitled, Summary Abstract: Gauging requirements and practices for storage rings and accelerators

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Residual currents in several commercial ultrahigh vacuum Bayard–Alpert gauges

Albert R. Filippelli

J. Vac. Sci. Technol. A 5, 3234–3241 (1987) https://doi.org/10.1116/1.574845

Abstract

View articletitled, Residual currents in several commercial ultrahigh vacuum Bayard–Alpert gauges

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Secondary electrons in ion gauges

G. Grosse; U. Harten; W. Jitschin; H. Gentsch

J. Vac. Sci. Technol. A 5, 3242–3243 (1987) https://doi.org/10.1116/1.574846

Abstract

View articletitled, Secondary electrons in ion gauges

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Summary Abstract: A thin‐collector Bayard–Alpert gauge for 10⁻¹² Torr vacuum

H. C. Hseuh; C. Lanni

J. Vac. Sci. Technol. A 5, 3244–3246 (1987) https://doi.org/10.1116/1.574847

View articletitled, Summary Abstract: A thin‐collector Bayard–Alpert gauge for 10−12 Torr vacuum

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Summary Abstract: Some observations on the calibration of two types of ultrahigh vacuum ion gauges

Peter Nash

J. Vac. Sci. Technol. A 5, 3247–3248 (1987) https://doi.org/10.1116/1.574848

View articletitled, Summary Abstract: Some observations on the calibration of two types of ultrahigh vacuum ion gauges

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Summary Abstract: Surface phenomena and their influence on ultrahigh vacuum gauges

Theodore E. Madey

J. Vac. Sci. Technol. A 5, 3249 (1987) https://doi.org/10.1116/1.574849

View articletitled, Summary Abstract: Surface phenomena and their influence on ultrahigh vacuum gauges

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