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Nucleation of highly uniform AlN thin films by high volume batch ALD on 200 mm platform
Robust ultrablack film deposited on large-curvature magnesium alloy by atomic layer deposition
High-performance of ZnO/TiO2 heterostructured thin-film photocatalyst fabricated via atomic layer deposition
Comparison of three titanium-precursors for atomic-layer-deposited TiO2 for passivating contacts on silicon
Surface treatment of TaN for sub-2 nm, smooth, and conducting atomic layer deposition Ru films
Catalytic atomic layer deposition of amorphous alumina–silica thin films on carbon microfibers
Improving SiO2 to SiNx etch selectivity during atomic layer etching with multiple selective organic pre-functionalization steps
In situ atom-resolved observation of Si (111) 7×7 surface with F radical and Ar ion irradiation simulated atomic layer etching
Novel 3D reciprocal space visualization of strain relaxation in InSb on GaAs substrates
Fine tuning of Nb-incorporated TiO2 thin films by atomic layer deposition and application as efficient electron transport layer in perovskite solar cells
Transient-assisted plasma etching (TAPE): Concept, mechanism, and prospects
PbS quantum dot thin film dry etching
Remote inductively coupled plasmas in Ar/N2 mixtures and implications for plasma enhanced ALD
Production of a high-density hydrogen plasma in a capacitively coupled RF discharge with a hollow cathode enclosed by magnets
Impact of Nb and Al content in arc evaporation targets on Ti1−x−yAlxNbyN coating properties
Over 6 MV/cm operation in β-Ga2O3 Schottky barrier diodes with IrO2 and RuO2 anodes deposited by molecular beam epitaxy
Deposition rate and optical emissions in niobium oxide processes by reactive sputtering
Experimental study of Ni/TiO2/β-Ga2O3 metal–dielectric–semiconductor diodes using p-NiO junction termination extension
XPS guide for insulators: Electron flood gun operation and optimization, surface charging, controlled charging, differential charging, useful FWHMs, problems and solutions, and advice
ARTICLES
2-D Materials
Interlayer registry effects on the electronic and piezoelectric properties of transition metal dichalcogenide bilayers
In Special Collection:
Celebrating the Achievements and Life of Joe Greene
J. Vac. Sci. Technol. A 42, 032201 (2024)
https://doi.org/10.1116/6.0003264
Atomic Layer Deposition (ALD)
Nucleation of highly uniform AlN thin films by high volume batch ALD on 200 mm platform
In Special Collection:
Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 42, 032401 (2024)
https://doi.org/10.1116/6.0003405
Inhibition of atomic layer deposition of TiO2 by functionalizing silicon surface with 4-fluorophenylboronic acid
In Special Collection:
Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 42, 032402 (2024)
https://doi.org/10.1116/6.0003316
Robust ultrablack film deposited on large-curvature magnesium alloy by atomic layer deposition
In Special Collection:
Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 42, 032403 (2024)
https://doi.org/10.1116/6.0003305
High-performance of ZnO/TiO2 heterostructured thin-film photocatalyst fabricated via atomic layer deposition
In Special Collection:
Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 42, 032404 (2024)
https://doi.org/10.1116/6.0003348
Properties of low-resistivity molybdenum metal thin film deposited by atomic layer deposition using MoO2Cl2 as precursor
In Special Collection:
Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 42, 032405 (2024)
https://doi.org/10.1116/6.0003361
Comparison of three titanium-precursors for atomic-layer-deposited TiO2 for passivating contacts on silicon
In Special Collection:
Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 42, 032406 (2024)
https://doi.org/10.1116/6.0003309
Surface treatment of TaN for sub-2 nm, smooth, and conducting atomic layer deposition Ru films
In Special Collection:
Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 42, 032407 (2024)
https://doi.org/10.1116/6.0003440
Catalytic atomic layer deposition of amorphous alumina–silica thin films on carbon microfibers
J. Vac. Sci. Technol. A 42, 032408 (2024)
https://doi.org/10.1116/6.0003422
Atomic Layer Etching (ALE)
Plasma atomic layer etching of SiO2 with a low global warming potential fluorocarbon precursor (C6F6)
In Special Collection:
Atomic Layer Etching (ALE)
J. Vac. Sci. Technol. A 42, 032601 (2024)
https://doi.org/10.1116/6.0003345
Improving SiO2 to SiNx etch selectivity during atomic layer etching with multiple selective organic pre-functionalization steps
In Special Collection:
Atomic Layer Etching (ALE)
J. Vac. Sci. Technol. A 42, 032602 (2024)
https://doi.org/10.1116/6.0003447
In situ atom-resolved observation of Si (111) 7×7 surface with F radical and Ar ion irradiation simulated atomic layer etching
In Special Collection:
Atomic Layer Etching (ALE)
J. Vac. Sci. Technol. A 42, 032603 (2024)
https://doi.org/10.1116/6.0003432
Epitaxial Growth of Materials
Strain-induced modulation of electronic structure in correlated Dirac semimetal Pv-CaIrO3 epitaxial thin films
In Special Collection:
Special Topic Collection Commemorating the Career of Frederick J. Walker
J. Vac. Sci. Technol. A 42, 032701 (2024)
https://doi.org/10.1116/6.0003462
Effect of template on the photoresponsivity of BaSi2 films grown on Ge(111) substrates by molecular beam epitaxy
In Special Collection:
Molecular Beam Epitaxy
J. Vac. Sci. Technol. A 42, 032702 (2024)
https://doi.org/10.1116/6.0003503
Bismuth surfactant enhancement of surface morphology and film quality of MBE-grown GaSb(100) thin films over a wide range of growth temperatures
In Special Collection:
Molecular Beam Epitaxy
J. Vac. Sci. Technol. A 42, 032703 (2024)
https://doi.org/10.1116/6.0003458
Novel 3D reciprocal space visualization of strain relaxation in InSb on GaAs substrates
In Special Collection:
Molecular Beam Epitaxy
J. Vac. Sci. Technol. A 42, 032704 (2024)
https://doi.org/10.1116/6.0003455
Observation of an abrupt 3D-2D morphological transition in thin Al layers grown by MBE on InGaAs surface
In Special Collection:
Molecular Beam Epitaxy
J. Vac. Sci. Technol. A 42, 032706 (2024)
https://doi.org/10.1116/6.0003459
Molecular beam epitaxy synthesis of In2Se3 films
In Special Collection:
Molecular Beam Epitaxy
J. Vac. Sci. Technol. A 42, 032707 (2024)
https://doi.org/10.1116/6.0003508
Etching of elemental layers in oxide molecular beam epitaxy by O2-assisted formation and evaporation of their volatile (sub)oxide: The examples of Ga and Ge
In Special Collection:
Gallium Oxide Materials and Devices
J. Vac. Sci. Technol. A 42, 032708 (2024)
https://doi.org/10.1116/6.0003453
Tuning the emission wavelength by varying the Sb composition in InGaAs/GaAsSb “W” quantum wells grown on GaAs (001) substrates
In Special Collection:
Molecular Beam Epitaxy
J. Vac. Sci. Technol. A 42, 032709 (2024)
https://doi.org/10.1116/6.0003501
Photovoltaics and Energy
Computational study and ion diffusion analyses of native defects and indium alloying in β-Ga2O3 structures
In Special Collection:
Gallium Oxide Materials and Devices
J. Vac. Sci. Technol. A 42, 032801 (2024)
https://doi.org/10.1116/6.0003435
Fine tuning of Nb-incorporated TiO2 thin films by atomic layer deposition and application as efficient electron transport layer in perovskite solar cells
In Special Collection:
Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 42, 032802 (2024)
https://doi.org/10.1116/6.0003351
Plasma Science and Technology
Polydimethylsiloxane surface irradiated by nitrogen ions: Influence of low molecular fractions
J. Vac. Sci. Technol. A 42, 033001 (2024)
https://doi.org/10.1116/6.0003443
Surface temperature of a 2 in. Ti target during DC magnetron sputtering
In Special Collection:
Celebrating the Achievements and Life of Joe Greene
J. Vac. Sci. Technol. A 42, 033002 (2024)
https://doi.org/10.1116/6.0003481
Effects of magnetic field gradient on capacitively coupled plasma driven by tailored voltage waveforms
J. Vac. Sci. Technol. A 42, 033003 (2024)
https://doi.org/10.1116/6.0003324
Modeling of ion transport from ionization region to entrance of mass spectrometer in HiPIMS argon/Cr target
J. Vac. Sci. Technol. A 42, 033004 (2024)
https://doi.org/10.1116/6.0003317
Transient-assisted plasma etching (TAPE): Concept, mechanism, and prospects
In Special Collection:
Atomic Layer Etching (ALE)
J. Vac. Sci. Technol. A 42, 033006 (2024)
https://doi.org/10.1116/6.0003380
PbS quantum dot thin film dry etching
J. Vac. Sci. Technol. A 42, 033007 (2024)
https://doi.org/10.1116/6.0003335
Remote inductively coupled plasmas in Ar/N2 mixtures and implications for plasma enhanced ALD
In Special Collection:
Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 42, 033008 (2024)
https://doi.org/10.1116/6.0003538
Impact of vacuum ultraviolet photons on ultrathin polymethylmethacrylate during plasma etching
J. Vac. Sci. Technol. A 42, 033009 (2024)
https://doi.org/10.1116/6.0003541
Power measurement analysis of moderate pressure capacitively coupled discharges
J. Vac. Sci. Technol. A 42, 033010 (2024)
https://doi.org/10.1116/6.0003366
Production of a high-density hydrogen plasma in a capacitively coupled RF discharge with a hollow cathode enclosed by magnets
J. Vac. Sci. Technol. A 42, 033011 (2024)
https://doi.org/10.1116/6.0003448
Surface Engineering and Coatings
Impact of Nb and Al content in arc evaporation targets on Ti1−x−yAlxNbyN coating properties
J. Vac. Sci. Technol. A 42, 033102 (2024)
https://doi.org/10.1116/6.0003409
Flexible VO2 films grown on ZnO-nanorod buffered polyimide sheets with large insulator metal transition: Evaluation of flexible performance
J. Vac. Sci. Technol. A 42, 033103 (2024)
https://doi.org/10.1116/6.0003378
Microstructure and mechanical properties of Cr films with different orientations before and after plasma nitriding
J. Vac. Sci. Technol. A 42, 033104 (2024)
https://doi.org/10.1116/6.0003492
Surfaces and Interfaces
Radiation damage effects on electronic and optical properties of β-Ga2O3 from first-principles
In Special Collection:
Gallium Oxide Materials and Devices
J. Vac. Sci. Technol. A 42, 033201 (2024)
https://doi.org/10.1116/6.0003430
Electrical conductivity, luminescence, and deep acceptor levels in β-Ga2O3-In2O3 polycrystalline solid solution doped with Zr4+ or Ca2+ ions
In Special Collection:
Gallium Oxide Materials and Devices
J. Vac. Sci. Technol. A 42, 033202 (2024)
https://doi.org/10.1116/6.0003466
Stability investigation of Eu3+ doped CaF2 thin film with ZnO coating under electron beam irradiation
J. Vac. Sci. Technol. A 42, 033203 (2024)
https://doi.org/10.1116/6.0003363
Strong signature of uncompensated magnetization in frustrated cobalt manganites using x-ray magnetic circular dichroism study
J. Vac. Sci. Technol. A 42, 033204 (2024)
https://doi.org/10.1116/6.0003417
Friction and wear behavior of C implanted copper via ion beam-assisted bombardment
J. Vac. Sci. Technol. A 42, 033205 (2024)
https://doi.org/10.1116/6.0003495
Over 6 MV/cm operation in β-Ga2O3 Schottky barrier diodes with IrO2 and RuO2 anodes deposited by molecular beam epitaxy
In Special Collection:
Gallium Oxide Materials and Devices
J. Vac. Sci. Technol. A 42, 033206 (2024)
https://doi.org/10.1116/6.0003468
Significant decrease in surface charging of electrically isolated ionic liquid by cluster ion bombardment
J. Vac. Sci. Technol. A 42, 033207 (2024)
https://doi.org/10.1116/6.0003500
Thin Films
Deposition rate and optical emissions in niobium oxide processes by reactive sputtering
J. Vac. Sci. Technol. A 42, 033402 (2024)
https://doi.org/10.1116/6.0003255
High-performance a-Ga2O3 solar-blind photodetectors by pulsed magnetron sputtering deposition
J. Vac. Sci. Technol. A 42, 033403 (2024)
https://doi.org/10.1116/6.0003442
Effect of high-temperature postannealing atmosphere on the properties of BaSi2 films
In Special Collection:
Molecular Beam Epitaxy
J. Vac. Sci. Technol. A 42, 033404 (2024)
https://doi.org/10.1116/6.0003505
Experimental study of Ni/TiO2/β-Ga2O3 metal–dielectric–semiconductor diodes using p-NiO junction termination extension
In Special Collection:
Gallium Oxide Materials and Devices
J. Vac. Sci. Technol. A 42, 033405 (2024)
https://doi.org/10.1116/6.0003467
Effect of growth conditions and reactor configuration on the growth uniformity of large-scale graphene by chemical vapor deposition
J. Vac. Sci. Technol. A 42, 033406 (2024)
https://doi.org/10.1116/6.0003487
Materials’ properties of low temperature deposited Cu/W and Cu/Cr multilayer thin films using high power impulse magnetron sputtering
J. Vac. Sci. Technol. A 42, 033407 (2024)
https://doi.org/10.1116/6.0003512
Bayesian optimization for stable properties amid processing fluctuations in sputter deposition
J. Vac. Sci. Technol. A 42, 033408 (2024)
https://doi.org/10.1116/6.0003418
Tutorials
XPS guide for insulators: Electron flood gun operation and optimization, surface charging, controlled charging, differential charging, useful FWHMs, problems and solutions, and advice
In Special Collection:
Reproducibility Challenges and Solutions II with a Focus on Surface and Interface Analysis
J. Vac. Sci. Technol. A 42, 032803 (2024)
https://doi.org/10.1116/6.0003439
Errata
Erratum: “Acquisition and analysis of scanning tunneling spectroscopy data—WSe2 monolayer” [J. Vac. Sci. Technol. A 39, 011001 (2021)]
J. Vac. Sci. Technol. A 42, 033401 (2024)
https://doi.org/10.1116/6.0003535
