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Review Articles
Fundamentals of thin film depth profiling by glow discharge optical emission spectroscopy
In Special Collection:
Celebrating the Achievements and Life of Joe Greene
J. Vac. Sci. Technol. A 41, 040801 (2023)
https://doi.org/10.1116/6.0002695
Review of virtual substrate technologies for 6.3 Ångström lattice constants
In Special Collection:
Papers from the 36th North American Conference on Molecular Beam Epitaxy (NAMBE 2022)
Stefan P. Svensson; Nadeemullah A. Mahadik; Gela Kipshidze; Dmitri Donetski; Jingze Zhao; Gregory Belenky
J. Vac. Sci. Technol. A 41, 040802 (2023)
https://doi.org/10.1116/6.0002715
ARTICLES
2-D Materials
Growth mechanisms of interfacial carbon layers at the epitaxial Al2O3(0001)/Cu(111) interface as application for epitaxial film lift-off
J. Vac. Sci. Technol. A 41, 042201 (2023)
https://doi.org/10.1116/6.0002568
Epitaxial growth of Bi, Sb, and Sn
J. Vac. Sci. Technol. A 41, 042202 (2023)
https://doi.org/10.1116/6.0002641
Need for complementary techniques for reliable characterization of MoS2-like layers
In Special Collection:
Celebrating the Achievements and Life of Joe Greene
Aditya Deshpande; Koki Hojo; Koichi Tanaka; Pedro Arias; Hicham Zaid; Michael Liao; Mark Goorsky; Suneel Kodambaka
J. Vac. Sci. Technol. A 41, 042203 (2023)
https://doi.org/10.1116/6.0002701
Atomic Layer Deposition (ALD)
Plasma enhanced atomic layer deposition of manganese nitride thin film from manganese amidinate and ammonia plasma
In Special Collection:
Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 41, 042401 (2023)
https://doi.org/10.1116/6.0002484
Investigation of the transition of amorphous Ti-thiolate prepared by hybrid atomic layer deposition/molecular layer deposition into titanium disulfide ultrathin film
In Special Collection:
Atomic Layer Deposition (ALD)
Petros Abi Younes; Ashok-Kumar Yadav; Medet Zhukush; Van-Hoan Le; Hervé Roussel; Marie-Ingrid Richard; Clément Camp; Kai Szeto; Gianluca Ciatto; Nathanaelle Schneider; Elsje Alessandra Quadrelli; Hubert Renevier; Nicolas Gauthier
J. Vac. Sci. Technol. A 41, 042403 (2023)
https://doi.org/10.1116/6.0002448
Electron-enhanced SiO2 atomic layer deposition at 35 °C using disilane and ozone or water as reactants
In Special Collection:
Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 41, 042404 (2023)
https://doi.org/10.1116/6.0002726
Atomic layer deposition of calcium fluoride for barrier coating applications
J. Vac. Sci. Technol. A 41, 042405 (2023)
https://doi.org/10.1116/6.0002563
Plasma-enhanced atomic layer deposition of silicon nitride for front-end-of-line applications
In Special Collection:
Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 41, 042406 (2023)
https://doi.org/10.1116/6.0002424
Atomic Layer Etching (ALE)
Near-surface damage and mixing in Si-Cl2-Ar atomic layer etching processes: Insights from molecular dynamics simulations
J. Vac. Sci. Technol. A 41, 042601 (2023)
https://doi.org/10.1116/6.0002719
Comparison of BCl3, TiCl4, and SOCl2 chlorinating agents for atomic layer etching of TiO2 and ZrO2 using tungsten hexafluoride
In Special Collection:
Celebrating the Achievements and Life of Joe Greene
J. Vac. Sci. Technol. A 41, 042602 (2023)
https://doi.org/10.1116/6.0002708
Exploring the self-limiting atomic layer etching of AlGaN: A study of O2-BCl3 and chlorinate-argon systems
In Special Collection:
Atomic Layer Etching (ALE)
J. Vac. Sci. Technol. A 41, 042603 (2023)
https://doi.org/10.1116/6.0002647
Epitaxial Growth of Materials
Why thermal laser epitaxy aluminum sources yield reproducible fluxes in oxidizing environments
In Special Collection:
Papers from the 36th North American Conference on Molecular Beam Epitaxy (NAMBE 2022)
Thomas J. Smart; Felix V. E. Hensling; Dong Yeong Kim; Lena N. Majer; Y. Eren Suyolcu; Dominik Dereh; Darrell G. Schlom; Debdeep Jena; Jochen Mannhart; Wolfgang Braun
J. Vac. Sci. Technol. A 41, 042701 (2023)
https://doi.org/10.1116/6.0002632
Correlating elemental compositions and charge carrier profiles in ultra-pure GaN/AlGaN stacks grown by molecular beam epitaxy
In Special Collection:
Papers from the 36th North American Conference on Molecular Beam Epitaxy (NAMBE 2022)
Stefan Schmult; Pascal Appelt; Claudia Silva; Steffen Wirth; Andre Wachowiak; Andreas Großer; Thomas Mikolajick
J. Vac. Sci. Technol. A 41, 042702 (2023)
https://doi.org/10.1116/6.0002652
Nitrogen centers in single crystal diamond grown by chemical vapor deposition
J. Vac. Sci. Technol. A 41, 042703 (2023)
https://doi.org/10.1116/6.0002622
Comparison of triethylgallium and diethylgallium ethoxide for β-Ga2O3 growth by metalorganic vapor phase epitaxy
In Special Collection:
Gallium Oxide Materials and Devices
Ken Goto; Taro Nishimura; Masato Ishikawa; Takahito Okuyama; Haruka Tozato; Shogo Sasaki; Kazutada Ikenaga; Yoshihiko Takinami; Hideaki Machida; Yoshinao Kumagai
J. Vac. Sci. Technol. A 41, 042704 (2023)
https://doi.org/10.1116/6.0002732
Large redshift in photoluminescence of InAs/AlAs short-period superlattices due to highly ordered lateral composition modulation
Jinshan Yao; Jiayi Li; Qihang Zhang; Zongyan Zuo; Weiwei Zhang; Wenyang Wang; Chen Li; Baile Chen; Yu Deng; Xuejin Zhang; Hong Lu; Yan-Feng Chen
J. Vac. Sci. Technol. A 41, 042705 (2023)
https://doi.org/10.1116/6.0002748
Structural characterization of epitaxial γ-Ta2N thin films and AlN/γ-Ta2N heterostructures on SiC substrates
J. Vac. Sci. Technol. A 41, 042706 (2023)
https://doi.org/10.1116/6.0002530
The growth of self-intercalated Nb1+xSe2 by molecular beam epitaxy: The effect of processing conditions on the structure and electrical resistivity
Peter M. Litwin; Samantha T. Jaszewski; Wendy L. Sarney; Asher C. Leff; Sergiy Krylyuk; Albert V. Davydov; Jon F. Ihlefeld; Stephen J. McDonnell
J. Vac. Sci. Technol. A 41, 042707 (2023)
https://doi.org/10.1116/6.0002593
Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices
In Special Collection:
Gallium Oxide Materials and Devices
Fedor Hrubišák; Kristína Hušeková; Xiang Zheng; Alica Rosová; Edmund Dobročka; Milan Ťapajna; Matej Mičušík; Peter Nádaždy; Fridrich Egyenes; Javad Keshtkar; Eva Kováčová; James W. Pomeroy; Martin Kuball; Filip Gucmann
J. Vac. Sci. Technol. A 41, 042708 (2023)
https://doi.org/10.1116/6.0002649
N2O grown high Al composition nitrogen doped β-(AlGa)2O3/β-Ga2O3 using MOCVD
In Special Collection:
Gallium Oxide Materials and Devices
J. Vac. Sci. Technol. A 41, 042709 (2023)
https://doi.org/10.1116/6.0002594
Molecular beam epitaxy and crystal structure of majority a-plane-oriented and substrate-strained Mn3Sn thin films grown directly on sapphire (0001)
Sneha Upadhyay; Tyler Erickson; Hannah Hall; Ashok Shrestha; David C. Ingram; Kai Sun; Juan Carlos Moreno Hernandez; Gregorio Hernandez Cocoletzi; Noboru Takeuchi; Arthur R. Smith
J. Vac. Sci. Technol. A 41, 042710 (2023)
https://doi.org/10.1116/6.0002535
Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy
In Special Collection:
Papers from the 36th North American Conference on Molecular Beam Epitaxy (NAMBE 2022)
Malak Refaei; Andrian Kuchuk; Rohith Allaparthi; Mirsaeid Sarollahia; Md Helal Uddin Maruf; Morgan E. Ware
J. Vac. Sci. Technol. A 41, 042711 (2023)
https://doi.org/10.1116/6.0002679
Crystallinity degradation and defect development in (AlxGa1−x)2O3 thin films with increased Al composition
In Special Collection:
Gallium Oxide Materials and Devices
J. Vac. Sci. Technol. A 41, 042712 (2023)
https://doi.org/10.1116/6.0002625
Size distribution of clusters and nucleation preference of trimers during SiC (0001) surface epitaxial growth under low coverage
J. Vac. Sci. Technol. A 41, 042713 (2023)
https://doi.org/10.1116/6.0002686
Band structure and strain distribution of InAs quantum dots encapsulated in (Al)GaAs asymmetric matrixes
In Special Collection:
Papers from the 36th North American Conference on Molecular Beam Epitaxy (NAMBE 2022)
J. P. Olvera-Enríquez; L. I. Espinosa-Vega; I. E. Cortés-Mestizo; C. A. Mercado-Ornelas; F. E. Perea-Parrales; A. Belio-Manzano; C. M. Yee-Rendón; V. H. Méndez-García
J. Vac. Sci. Technol. A 41, 042714 (2023)
https://doi.org/10.1116/6.0002674
Plasma Science and Technology
Selective generation of reactive oxygen species in plasma-activated water using CO2 plasma
J. Vac. Sci. Technol. A 41, 043001 (2023)
https://doi.org/10.1116/6.0002460
Long and flexible atmospheric pressure plasma jet probes for operation in humid environments
In Special Collection:
Papers from the Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2022)
J. Vac. Sci. Technol. A 41, 043002 (2023)
https://doi.org/10.1116/6.0002710
Surface Engineering and Coatings
Influence of boron contents on mechanical properties and high-temperature tribological behavior in (AlCrNbTiB)N coatings
In Special Collection:
Celebrating the Achievements and Life of Joe Greene
Tzu-Ling Chen; Sheng-Yu Hsu; Yuan-Tai Lai; Shou-Yi Chang; Hsueh-Hsing Hung; Su-Yueh Tsai; Jenq-Gong Duh
J. Vac. Sci. Technol. A 41, 043101 (2023)
https://doi.org/10.1116/6.0002538
Ge-ion implantation and activation in (100) β-Ga2O3 for ohmic contact improvement using pulsed rapid thermal annealing
In Special Collection:
Gallium Oxide Materials and Devices
Kornelius Tetzner; Andreas Thies; Palvan Seyidov; Ta-Shun Chou; Jana Rehm; Ina Ostermay; Zbigniew Galazka; Andreas Fiedler; Andreas Popp; Joachim Würfl; Oliver Hilt
J. Vac. Sci. Technol. A 41, 043102 (2023)
https://doi.org/10.1116/6.0002642
Studies on the growth mechanism of aluminide coating on K444 alloy surface by chemical vapor deposition
J. Vac. Sci. Technol. A 41, 043103 (2023)
https://doi.org/10.1116/6.0002654
Highly elastic hard PECVD TiSiC:H/a-SiC:H coatings with enhanced erosion and corrosion resistance: The trampoline effect
In Special Collection:
Functional Coatings
J. Vac. Sci. Technol. A 41, 043105 (2023)
https://doi.org/10.1116/6.0002423
Surfaces and Interfaces
Insufficient reporting of x-ray photoelectron spectroscopy instrumental and peak fitting parameters (metadata) in the scientific literature
In Special Collection:
Reproducibility Challenges and Solutions II with a Focus on Surface and Interface Analysis
George H. Major; B. Maxwell Clark; Kevin Cayabyab; Nathan Engel; Christopher D. Easton; Jan Čechal; Donald R. Baer; Jeff Terry; Matthew R. Linford
J. Vac. Sci. Technol. A 41, 043201 (2023)
https://doi.org/10.1116/6.0002714
XPS investigation of monoatomic and cluster argon sputtering of zirconium dioxide
J. Vac. Sci. Technol. A 41, 043202 (2023)
https://doi.org/10.1116/6.0002630
Resolving buried interfaces with low energy ion scattering
J. Vac. Sci. Technol. A 41, 043203 (2023)
https://doi.org/10.1116/6.0002567
Modulation of the LaFeO3 film growth by the terrace width of SrTiO3 substrates
In Special Collection:
Special Topic Collection Commemorating the Career of Frederick J. Walker
J. Vac. Sci. Technol. A 41, 043204 (2023)
https://doi.org/10.1116/6.0002579
Surface structural analysis of CaF2(111) using low-energy atom scattering spectroscopy
J. Vac. Sci. Technol. A 41, 043205 (2023)
https://doi.org/10.1116/6.0002392
Theoretical analysis of thermal spikes during ion bombardment of amorphous silicon nitride surfaces
J. Vac. Sci. Technol. A 41, 043207 (2023)
https://doi.org/10.1116/6.0002656
Double Lorentzian lineshape for asymmetric peaks in photoelectron spectroscopy
In Special Collection:
Reproducibility Challenges and Solutions II with a Focus on Surface and Interface Analysis
Alberto Herrera-Gomez; Dulce Maria Guzman-Bucio; Abraham Jorge Carmona-Carmona; Orlando Cortazar-Martinez; Marisol Mayorga-Garay; Dagoberto Cabrera-German; Carlos Alberto Ospina-Ocampo; B. Vincent Crist; Joaquín Raboño-Borbolla
J. Vac. Sci. Technol. A 41, 043208 (2023)
https://doi.org/10.1116/6.0002602
Peak intensities in Auger electron spectroscopy for quantification: Relationship between differentiated spectral intensities and direct peak areas
Katsumi Watanabe; Daisuke Watanabe; Kazutoshi Mamiya; Seiji Koizumi; Noriaki Sanada; Mineharu Suzuki
J. Vac. Sci. Technol. A 41, 043209 (2023)
https://doi.org/10.1116/6.0002487
Insight into the effect of coexistence of CO2 and H2 on stoichiometric and defective PuO2 surfaces hydriding from first-principles study
J. Vac. Sci. Technol. A 41, 043210 (2023)
https://doi.org/10.1116/6.0002617
Ultrathin stable Ohmic contacts for high-temperature operation of β-Ga2O3 devices
In Special Collection:
Gallium Oxide Materials and Devices
William A. Callahan; Edwin Supple; David Ginley; Michael Sanders; Brian P. Gorman; Ryan O’Hayre; Andriy Zakutayev
J. Vac. Sci. Technol. A 41, 043211 (2023)
https://doi.org/10.1116/6.0002645
Study of the surface and interface properties of ultrathin nickel film on cerium layer by in situ magnetic sputtering
Tianzuo Fu; Yiqiang Zhong; Lihua Zhou; Shuwen Meng; Zhengang Tian; Yiwu Chen; Tianfu Li; Xiaoyu Zou; Zhengcao Li; Tinggui Yang
J. Vac. Sci. Technol. A 41, 043212 (2023)
https://doi.org/10.1116/6.0002455
Thin Films
Determination of stress in thin films using micro-machined buckled membranes
J. Vac. Sci. Technol. A 41, 043401 (2023)
https://doi.org/10.1116/6.0002590
Effect of tilted closed-field magnetron design on the microstructure and mechanical properties of TiZrNbTaN coatings
In Special Collection:
Celebrating the Achievements and Life of Joe Greene
Sanath Kumar Honnali; Charlotte Poterie; Arnaud le Febvrier; Daniel Lundin; Grzegorz Greczynski; Per Eklund
J. Vac. Sci. Technol. A 41, 043402 (2023)
https://doi.org/10.1116/6.0002752
Thermal stability of HVPE-grown (0001) α-Ga2O3 on sapphire template under vacuum and atmospheric environments
In Special Collection:
Gallium Oxide Materials and Devices
J. Vac. Sci. Technol. A 41, 043403 (2023)
https://doi.org/10.1116/6.0002559
Effect of drift layer doping and NiO parameters in achieving 8.9 kV breakdown in 100 μm diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga2O3 rectifiers
In Special Collection:
Gallium Oxide Materials and Devices
J. Vac. Sci. Technol. A 41, 043404 (2023)
https://doi.org/10.1116/6.0002722
Effect of structure on semiconducting properties of a small molecule n-type organic semiconductor: Phenyl-C61-butyric acid methyl ester
In Special Collection:
Functional Coatings
J. Vac. Sci. Technol. A 41, 043405 (2023)
https://doi.org/10.1116/6.0002410
Nucleation and quantum confinement of nano-platelet Bi2–Bi2Se3
Margaret M. Brown; Ricardo Ruvalcaba; Katherine M. Burzynski; Derek Winner; Krishnamurthy Mahalingam; Venkata S. Puli; Ryan P. Laing; Tobin C. Muratore; Jeff L. Brown; Kurt G. Eyink; Said Elhamri; Aldo H. Romero; Jonathan Guerrero-Sanchez; Joseph P. Corbett; Amber Reed
J. Vac. Sci. Technol. A 41, 043406 (2023)
https://doi.org/10.1116/6.0002655
Microstructure evolution in the self-propagating reaction in Al/Ru bilayers by phase-field simulations and experiments
In Special Collection:
Celebrating the Achievements and Life of Joe Greene
Kaveh Dargahi Noubary; Christian Schäfer; Christoph Pauly; Michael Kellner; Vincent Ott; Michael Stüber; Frank Mücklich; Britta Nestler
J. Vac. Sci. Technol. A 41, 043407 (2023)
https://doi.org/10.1116/6.0002587
Ru thin films prepared by RF magnetron sputtering with Ru targets of different microstructures
J. Vac. Sci. Technol. A 41, 043408 (2023)
https://doi.org/10.1116/6.0002583
Structural evolution and thermoelectric properties of Mg3SbxBi2−x thin films deposited by magnetron sputtering
In Special Collection:
Celebrating the Achievements and Life of Joe Greene
J. Vac. Sci. Technol. A 41, 043409 (2023)
https://doi.org/10.1116/6.0002635
Dependence of persistent photoconductivity on the thickness of β-Ga2O3 thin film photodetectors on c-plane sapphire via magnetron sputtering
In Special Collection:
Gallium Oxide Materials and Devices
J. Vac. Sci. Technol. A 41, 043410 (2023)
https://doi.org/10.1116/6.0002646
Properties of Schottky barrier diodes on heteroeptixial α-Ga2O3 thin films
In Special Collection:
Gallium Oxide Materials and Devices
J. Vac. Sci. Technol. A 41, 043411 (2023)
https://doi.org/10.1116/6.0002651
Amorphous carbon thin films: Mechanisms of hydrogen incorporation during magnetron sputtering and consequences for the secondary electron emission
C. F. Adame; E. Alves; N. P. Barradas; P. Costa Pinto; Y. Delaup; I. M. M. Ferreira; H. Neupert; M. Himmerlich; S. Pfeiffer; M. Rimoldi; M. Taborelli; O. M. N. D. Teodoro; N. Bundaleski
J. Vac. Sci. Technol. A 41, 043412 (2023)
https://doi.org/10.1116/6.0002759
Foldable electrochromic NiO films
J. Vac. Sci. Technol. A 41, 043414 (2023)
https://doi.org/10.1116/6.0002742
Errata
Atomic layer deposition of transition metal chalcogenide TaSx using Ta[N(CH3)2]3[NC(CH3)3] precursor and H2S plasma
J. H. Deijkers, H. Thepass, et al.
Low-resistivity molybdenum obtained by atomic layer deposition
Kees van der Zouw, Bernhard Y. van der Wel, et al.