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2-D Materials

Effects on graphene of electron irradiation at 25 keV and dosages up to 10¹⁸ electrons/cm²

I. A. Ojo; E. Hathaway; R. R. Gonzalez; P. R. Adhikari; V. Sathish; B. Kunam; Y. Khalid; J. Cui; W. Choi; J. M. Perez

J. Vac. Sci. Technol. A 41, 012201 (2023) https://doi.org/10.1116/6.0002209

Abstract

View articletitled, Effects on graphene of electron irradiation at 25 keV and dosages up to 1018 electrons/cm2

Supplementary Material

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Growth of ultrathin Bi₂Se₃ films by molecular beam epitaxy

In Special Collection: Papers from the 36th North American Conference on Molecular Beam Epitaxy (NAMBE 2022)

Saadia Nasir; Walter J. Smith; Thomas E. Beechem; Stephanie Law

J. Vac. Sci. Technol. A 41, 012202 (2023) https://doi.org/10.1116/6.0002299

Abstract

View articletitled, Growth of ultrathin Bi2Se3 films by molecular beam epitaxy

Supplementary Material

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Atomic Layer Deposition (ALD)

Molecular layer deposition of alucone in high aspect ratio trenches: The effect of TMA outgassing on step-coverage

In Special Collection: Atomic Layer Deposition (ALD)

Hardik Jain; Mariadriana Creatore; Paul Poodt

J. Vac. Sci. Technol. A 41, 012401 (2023) https://doi.org/10.1116/6.0002249

Abstract

View articletitled, Molecular layer deposition of alucone in high aspect ratio trenches: The effect of TMA outgassing on step-coverage

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Selectivity dependence of atomic layer deposited manganese oxide on the precursor ligands on platinum facets

In Special Collection: Area Selective Deposition

Yuxiao Lan; Yanwei Wen; Yicheng Li; Jiaqiang Yang; Kun Cao; Bin Shan; Rong Chen

J. Vac. Sci. Technol. A 41, 012402 (2023) https://doi.org/10.1116/6.0002173

Abstract

View articletitled, Selectivity dependence of atomic layer deposited manganese oxide on the precursor ligands on platinum facets

Supplementary Material

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Cut-and-pasting ligands: The structure/function relationships of a thermally robust Mo(VI) precursor

In Special Collection: Atomic Layer Deposition (ALD)

Michael A. Land; Dexter A. Dimova; Katherine N. Robertson; Seán T. Barry

J. Vac. Sci. Technol. A 41, 012403 (2023) https://doi.org/10.1116/6.0002254

Abstract

View articletitled, Cut-and-pasting ligands: The structure/function relationships of a thermally robust Mo(VI) precursor

Supplementary Material

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Inhibition of the atomic layer deposition of ZnO and SnO₂ using a vapor-based polymer thin film

In Special Collection: Area Selective Deposition

Raphaël Feougier; Chloe Guerin; Vincent Jousseaume

J. Vac. Sci. Technol. A 41, 012404 (2023) https://doi.org/10.1116/6.0002248

Abstract

View articletitled, Inhibition of the atomic layer deposition of ZnO and SnO2 using a vapor-based polymer thin film

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Thermal atomic layer deposition of molybdenum carbide films using bis(ethylbenzene)molybdenum and H₂

Ji Sang Ahn; Wangu Kang; Jeong Hwan Han

J. Vac. Sci. Technol. A 41, 012405 (2023) https://doi.org/10.1116/6.0002308

Abstract

View articletitled, Thermal atomic layer deposition of molybdenum carbide films using bis(ethylbenzene)molybdenum and H2

Supplementary Material

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Plasma-enhanced atomic layer deposition of WO₃-SiO₂ films using a heteronuclear precursor

In Special Collection: Atomic Layer Deposition (ALD)

Kamesh Mullapudi; Konner E. K. Holden; Jessica L. Peterson; Charles L. Dezelah; Daniel F. Moser; Ravindra K. Kanjolia; Douglas J. Tweet; John F. Conley, Jr

J. Vac. Sci. Technol. A 41, 012406 (2023) https://doi.org/10.1116/6.0002214

Abstract

View articletitled, Plasma-enhanced atomic layer deposition of WO3-SiO2 films using a heteronuclear precursor

Supplementary Material

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Atomic Layer Etching (ALE)

Surface reaction modelling of thermal atomic layer etching on blanket hafnium oxide and its application on high aspect ratio structures

Andreas Fischer; David Mui; Aaron Routzahn; Ryan Gasvoda; Jim Sims; Thorsten Lill

J. Vac. Sci. Technol. A 41, 012601 (2023) https://doi.org/10.1116/6.0002244

Abstract

View articletitled, Surface reaction modelling of thermal atomic layer etching on blanket hafnium oxide and its application on high aspect ratio structures

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CF₄ plasma-based atomic layer etching of Al₂O₃ and surface smoothing effect

In Special Collection: Atomic Layer Etching (ALE)

Chien-Wei Chen; Wen-Hao Cho; Chan-Yuen Chang; Chien-Ying Su; Nien-Nan Chu; Chi-Chung Kei; Bor-Ran Li

J. Vac. Sci. Technol. A 41, 012602 (2023) https://doi.org/10.1116/6.0002210

Abstract

View articletitled, CF4 plasma-based atomic layer etching of Al2O3 and surface smoothing effect

Supplementary Material

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Thermal atomic layer etching of VO₂ using sequential BCl₃ and SF₄ exposures: Observation of conversion, ligand-exchange, and oxidation state changes

In Special Collection: Atomic Layer Etching (ALE)

Jonas C. Gertsch; Jonathan L. Partridge; Austin M. Cano; Joel W. Clancey; Victor M. Bright; Steven M. George

J. Vac. Sci. Technol. A 41, 012603 (2023) https://doi.org/10.1116/6.0002149

Abstract

View articletitled, Thermal atomic layer etching of VO2 using sequential BCl3 and SF4 exposures: Observation of conversion, ligand-exchange, and oxidation state changes

Supplementary Material

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Plasma Science and Technology

Nanosecond pulsed plasma discharge for remediation of simulated wastewater containing thiazine and azo dyes as model pollutants

In Special Collection: Atmospheric Plasma-Liquid Interfaces

Muhammad Farooq; Siddiqa Ismail; N. U. Rehman

J. Vac. Sci. Technol. A 41, 013001 (2023) https://doi.org/10.1116/6.0002064

Abstract

View articletitled, Nanosecond pulsed plasma discharge for remediation of simulated wastewater containing thiazine and azo dyes as model pollutants

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Target ion and neutral spread in high power impulse magnetron sputtering

H. Hajihoseini; N. Brenning; M. Rudolph; M. A. Raadu; D. Lundin; J. Fischer; T. M. Minea; J. T. Gudmundsson

J. Vac. Sci. Technol. A 41, 013002 (2023) https://doi.org/10.1116/6.0002292

Abstract

View articletitled, Target ion and neutral spread in high power impulse magnetron sputtering

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Investigation of the magnetron balancing effect on the ionized flux fraction and deposition rate of sputtered titanium species for the high-power impulse magnetron sputtering pulses of different lengths

Anna Kapran; Vinicius G. Antunes; Zdeněk Hubička; Charles Ballage; Tiberiu Minea

J. Vac. Sci. Technol. A 41, 013003 (2023) https://doi.org/10.1116/6.0002309

Abstract

View articletitled, Investigation of the magnetron balancing effect on the ionized flux fraction and deposition rate of sputtered titanium species for the high-power impulse magnetron sputtering pulses of different lengths

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Electron beam-induced etching of SiO₂, Si₃N₄, and poly-Si assisted by CF₄/O₂ remote plasma

Kang-Yi Lin; Christian Preischl; Christian Felix Hermanns; Daniel Rhinow; Hans-Michael Solowan; Michael Budach; Hubertus Marbach; Klaus Edinger; G. S. Oehrlein

J. Vac. Sci. Technol. A 41, 013004 (2023) https://doi.org/10.1116/6.0002234

Abstract

View articletitled, Electron beam-induced etching of SiO2, Si3N4, and poly-Si assisted by CF4/O2 remote plasma

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Highly efficient plasma generation in inductively coupled plasmas using a parallel capacitor

Yeong-Min Lim; Young-Hun Hong; Gil-Ho Kang; Chin-Wook Chung

J. Vac. Sci. Technol. A 41, 013005 (2023) https://doi.org/10.1116/6.0002180

Abstract

View articletitled, Highly efficient plasma generation in inductively coupled plasmas using a parallel capacitor

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Voltage waveform tailoring for high aspect ratio plasma etching of SiO₂ using Ar/CF₄/O₂ mixtures: Consequences of ion and electron distributions on etch profiles

Florian Krüger; Hyunjae Lee; Sang Ki Nam; Mark J. Kushner

J. Vac. Sci. Technol. A 41, 013006 (2023) https://doi.org/10.1116/6.0002290

Abstract

View articletitled, Voltage waveform tailoring for high aspect ratio plasma etching of SiO2 using Ar/CF4/O2 mixtures: Consequences of ion and electron distributions on etch profiles

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Surface Engineering and Coatings

Effect of bias voltage and nitrogen content on the morphological, structural, mechanical, and corrosion resistance properties of micro-alloyed Ti_1−xAl_0.8xP_0.2XN_y films deposited by high power impulse magnetron sputtering

Olayinka O. Abegunde; Mohammed Makha; Hicham Larhlimi; Mohamed Lahouij; Youssef Samih; Heinz Busch; Jones Alami

J. Vac. Sci. Technol. A 41, 013101 (2023) https://doi.org/10.1116/6.0002232

Abstract

View articletitled, Effect of bias voltage and nitrogen content on the morphological, structural, mechanical, and corrosion resistance properties of micro-alloyed Ti1−xAl0.8xP0.2XNy films deposited by high power impulse magnetron sputtering

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Surfaces and Interfaces

Nucleation and growth mechanism for atomic layer deposition of Al₂O₃ on two-dimensional WS₂ monolayer

In Special Collection: Atomic Layer Deposition (ALD)

Tsu-Ting Lee; Kashi Chiranjeevulu; Sireesha Pedaballi; Daire Cott; Annelies Delabie; Chang-Fu Dee; Edward Yi Chang

J. Vac. Sci. Technol. A 41, 013201 (2023) https://doi.org/10.1116/6.0001913

Abstract

View articletitled, Nucleation and growth mechanism for atomic layer deposition of Al2O3 on two-dimensional WS2 monolayer

Supplementary Material

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Deep UV AlGaN LED reliability for long duration space missions

Benjamin C. Letson; Simon Barke; Peter Wass; Guido Mueller; Fan Ren; Stephen J. Pearton; John W. Conklin

J. Vac. Sci. Technol. A 41, 013202 (2023) https://doi.org/10.1116/6.0002199

Abstract

View articletitled, Deep UV AlGaN LED reliability for long duration space missions

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Practical guide to understanding goodness-of-fit metrics used in chemical state modeling of x-ray photoelectron spectroscopy data by synthetic line shapes using nylon as an example

In Special Collection: Reproducibility Challenges and Solutions II with a Focus on Surface and Interface Analysis

Neal Fairley; Pascal Bargiela; Adam Roberts; Vincent Fernandez; Jonas Baltrusaitis

J. Vac. Sci. Technol. A 41, 013203 (2023) https://doi.org/10.1116/6.0002196

Abstract

View articletitled, Practical guide to understanding goodness-of-fit metrics used in chemical state modeling of x-ray photoelectron spectroscopy data by synthetic line shapes using nylon as an example

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Aluminum nitride crystal-based photodetector with bias polarity-dependent spectral selectivity

Zelong Fan; Zuoyan Qin; Lei Jin; Yuan Cao; Zhongyu Yue; Baikui Li; Honglei Wu; Zhenhua Sun

J. Vac. Sci. Technol. A 41, 013204 (2023) https://doi.org/10.1116/5.0133162

Abstract

View articletitled, Aluminum nitride crystal-based photodetector with bias polarity-dependent spectral selectivity

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Optimization of chemical mechanical polishing of (010) β-Ga₂O₃

In Special Collection: Gallium Oxide Materials and Devices

Michael E. Liao; Kenny Huynh; Lezli Matto; Dorian P. Luccioni; Mark S. Goorsky

J. Vac. Sci. Technol. A 41, 013205 (2023) https://doi.org/10.1116/6.0002241

Abstract

View articletitled, Optimization of chemical mechanical polishing of (010) β-Ga2O3

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Thin Films

Conformal chemical vapor deposition of boron-rich boron carbide thin films from triethylboron

Arun Haridas Choolakkal; Hans Högberg; Jens Birch; Henrik Pedersen

J. Vac. Sci. Technol. A 41, 013401 (2023) https://doi.org/10.1116/6.0002203

Abstract

View articletitled, Conformal chemical vapor deposition of boron-rich boron carbide thin films from triethylboron

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Numerical ellipsometry: A method for selecting a single β-gallium oxide monoclinic crystal orientation able to determine the complete permittivity tensor

F. K. Urban, III; D. Barton; M. Schubert

J. Vac. Sci. Technol. A 41, 013402 (2023) https://doi.org/10.1116/6.0002235

Abstract

View articletitled, Numerical ellipsometry: A method for selecting a single β-gallium oxide monoclinic crystal orientation able to determine the complete permittivity tensor

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Dielectric spectroscopy and magnetoelectric coupling in dilute Fe substituted quasi-one-dimensional spin chain calcium cobalt manganite films

Nisha Thankachen; Bhargav Y. Pathak; Rutvi J. Pandya; U. V. Chhaya; A. K. Debnath; U. S. Joshi

J. Vac. Sci. Technol. A 41, 013403 (2023) https://doi.org/10.1116/5.0118975

Abstract

View articletitled, Dielectric spectroscopy and magnetoelectric coupling in dilute Fe substituted quasi-one-dimensional spin chain calcium cobalt manganite films

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Magnetic properties and magnetocaloric effect of (Fe₇₀Ni₃₀)₉₆Mo₄ thin films grown by molecular beam epitaxy

Raghad S. H. Saqat; Andrew W. Forbes; Niraj Bhattarai; Ian L. Pegg; John Philip

J. Vac. Sci. Technol. A 41, 013404 (2023) https://doi.org/10.1116/6.0002213

Abstract

View articletitled, Magnetic properties and magnetocaloric effect of (Fe70Ni30)96Mo4 thin films grown by molecular beam epitaxy

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Deposition of sputtered NiO as a p-type layer for heterojunction diodes with Ga₂O₃

In Special Collection: Gallium Oxide Materials and Devices

Jian-Sian Li; Xinyi Xia; Chao-Ching Chiang; David C. Hays; Brent P. Gila; Valentin Craciun; Fan Ren; S. J. Pearton

J. Vac. Sci. Technol. A 41, 013405 (2023) https://doi.org/10.1116/6.0002250

Abstract

View articletitled, Deposition of sputtered NiO as a p-type layer for heterojunction diodes with Ga2O3

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Sympetalous defects in metalorganic vapor phase epitaxy (MOVPE)-grown homoepitaxial β-Ga₂O₃ films

In Special Collection: Gallium Oxide Materials and Devices

Jacqueline Cooke; Praneeth Ranga; Arkka Bhattacharyya; Xueling Cheng; Yunshan Wang; Sriram Krishnamoorthy; Michael A. Scarpulla; Berardi Sensale-Rodriguez

J. Vac. Sci. Technol. A 41, 013406 (2023) https://doi.org/10.1116/6.0002303

Abstract

View articletitled, Sympetalous defects in metalorganic vapor phase epitaxy (MOVPE)-grown homoepitaxial β-Ga2O3 films

Supplementary Material

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Determining role of W⁺ ions in the densification of TiAlWN thin films grown by hybrid HiPIMS/DCMS technique with no external heating

In Special Collection: Functional Coatings

Xiao Li; Ivan Petrov; Lars Hultman; Grzegorz Greczynski

J. Vac. Sci. Technol. A 41, 013407 (2023) https://doi.org/10.1116/6.0002320

Abstract

View articletitled, Determining role of W+ ions in the densification of TiAlWN thin films grown by hybrid HiPIMS/DCMS technique with no external heating

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Dynamic character of compositional sputter depth profiling by SIMS: A comparison of different models for quantitative profile evaluation

Siegfried Hofmann; Feng-Min Zhong; Hao Yang; Jiang-Yong Wang; Cong-Kang Xu

J. Vac. Sci. Technol. A 41, 013408 (2023) https://doi.org/10.1116/6.0002233

Abstract

View articletitled, Dynamic character of compositional sputter depth profiling by SIMS: A comparison of different models for quantitative profile evaluation

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ARTICLES

2-D Materials

Atomic Layer Deposition (ALD)

Atomic Layer Etching (ALE)

Plasma Science and Technology

Surface Engineering and Coatings

Surfaces and Interfaces

Thin Films

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