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Photoelectron spectroscopic studies on metal halide perovskite materials
Critical review of Ohmic and Schottky contacts to β-Ga2O3
Hydrogen permeation barriers and preparation techniques: A review
Variability of band alignment between WS2 and SiO2: Intrinsic versus extrinsic contributions
Nucleation and growth of molybdenum disulfide grown by thermal atomic layer deposition on metal oxides
Simple thermal vapor deposition process for and characterization of n-type indium oxysulfide thin films
In situ spectroscopic ellipsometry and rigorous coupled wave analysis for real time profile evolution of atomic layer deposited films inside SiO2 nanotrenches
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Low temperature, area-selective atomic layer deposition of NiO and Ni
Machine learning and atomic layer deposition: Predicting saturation times from reactor growth profiles using artificial neural networks
Packing of inhibitor molecules during area-selective atomic layer deposition studied using random sequential adsorption simulations
Area selective deposition of ruthenium on 3D structures
Epitaxial growth of the first two members of the Ban+1InnO2.5n+1 Ruddlesden–Popper homologous series
Quantitative x-ray diffraction analysis of strain and interdiffusion in β-Ga2O3 superlattices of μ-Fe2O3 and β-(AlxGa1−x)2O3
Electric discharge initiation in water with gas bubbles: A time scale approach
SiO2 etching and surface evolution using combined exposure to CF4/O2 remote plasma and electron beam
Guide to XPS data analysis: Applying appropriate constraints to synthetic peaks in XPS peak fitting
Modification of a force field for molecular dynamics simulations of silicon etching by chlorine atoms
Practical guide on chemometrics/informatics in x-ray photoelectron spectroscopy (XPS). II. Example applications of multiple methods to the degradation of cellulose and tartaric acid
Practical guide on chemometrics/informatics in x-ray photoelectron spectroscopy (XPS). I. Introduction to methods useful for large or complex datasets
Growth behavior and substrate selective deposition of polypyrrole, polythiophene, and polyaniline by oxidative chemical vapor deposition and molecular layer deposition
Zn dots coherently grown as the seed and buffer layers on Si(111) for ZnO thin film: Mechanism, in situ analysis, and simulation
Letters
Diffusion-assisted molecular beam epitaxy of CuCrO2 thin films
In Special Collection:
Thin Film Deposition for Materials Discovery
J. Vac. Sci. Technol. A 40, 060401 (2022)
https://doi.org/10.1116/6.0002151
Homogeneous high In content InxGa1−x N films by supercycle atomic layer deposition
In Special Collection:
Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 40, 060402 (2022)
https://doi.org/10.1116/6.0002079
Review Articles
Photoelectron spectroscopic studies on metal halide perovskite materials
In Special Collection:
Commemorating the Career of David Arthur Shirley
J. Vac. Sci. Technol. A 40, 060801 (2022)
https://doi.org/10.1116/6.0001903
Critical review of Ohmic and Schottky contacts to β-Ga2O3
In Special Collection:
Gallium Oxide Materials and Devices
J. Vac. Sci. Technol. A 40, 060802 (2022)
https://doi.org/10.1116/6.0002144
Hydrogen permeation barriers and preparation techniques: A review
In Special Collection:
Functional Coatings
J. Vac. Sci. Technol. A 40, 060803 (2022)
https://doi.org/10.1116/6.0002178
ARTICLES
2-D Materials
Variability of band alignment between WS2 and SiO2: Intrinsic versus extrinsic contributions
J. Vac. Sci. Technol. A 40, 062201 (2022)
https://doi.org/10.1116/6.0001987
Nucleation and growth of molybdenum disulfide grown by thermal atomic layer deposition on metal oxides
J. Vac. Sci. Technol. A 40, 062202 (2022)
https://doi.org/10.1116/6.0002024
Atomic Layer Deposition (ALD)
Synthesis and characteristics of Sn-doped SiO2 via plasma-enhanced atomic layer deposition for self-aligned patterning
In Special Collection:
Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 40, 062401 (2022)
https://doi.org/10.1116/6.0001895
Simple thermal vapor deposition process for and characterization of n-type indium oxysulfide thin films
J. Vac. Sci. Technol. A 40, 062402 (2022)
https://doi.org/10.1116/6.0001997
In situ spectroscopic ellipsometry and rigorous coupled wave analysis for real time profile evolution of atomic layer deposited films inside SiO2 nanotrenches
In Special Collection:
Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 40, 062403 (2022)
https://doi.org/10.1116/6.0001937
Fluidized-bed plasma enhanced atomic layer deposition of Pd catalyst for low-temperature CO oxidation
J. Vac. Sci. Technol. A 40, 062404 (2022)
https://doi.org/10.1116/6.0001946
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
J. Vac. Sci. Technol. A 40, 062405 (2022)
https://doi.org/10.1116/6.0002021
Low temperature, area-selective atomic layer deposition of NiO and Ni
In Special Collection:
Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 40, 062406 (2022)
https://doi.org/10.1116/6.0002068
Temperature study of atmospheric-pressure plasma-enhanced spatial ALD of Al2O3 using infrared and optical emission spectroscopy
In Special Collection:
Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 40, 062407 (2022)
https://doi.org/10.1116/6.0002158
Machine learning and atomic layer deposition: Predicting saturation times from reactor growth profiles using artificial neural networks
In Special Collection:
Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 40, 062408 (2022)
https://doi.org/10.1116/6.0001973
Packing of inhibitor molecules during area-selective atomic layer deposition studied using random sequential adsorption simulations
In Special Collection:
Area Selective Deposition
J. Vac. Sci. Technol. A 40, 062409 (2022)
https://doi.org/10.1116/6.0002096
Moisture barrier coating of AlN and Al2O3 multilayer film prepared by low-temperature atomic layer deposition
In Special Collection:
Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 40, 062410 (2022)
https://doi.org/10.1116/6.0002057
Atomic layer deposition of MoNx thin films using a newly synthesized liquid Mo precursor
In Special Collection:
Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 40, 062411 (2022)
https://doi.org/10.1116/6.0002154
Area selective deposition of ruthenium on 3D structures
In Special Collection:
Area Selective Deposition
J. Vac. Sci. Technol. A 40, 062412 (2022)
https://doi.org/10.1116/6.0002148
Role of ZnO and MgO interfaces on the growth and optoelectronic properties of atomic layer deposited Zn1−xMgxO films
In Special Collection:
Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 40, 062413 (2022)
https://doi.org/10.1116/6.0001925
Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition
In Special Collection:
Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 40, 062414 (2022)
https://doi.org/10.1116/6.0002095
Atomic Layer Etching (ALE)
Area-selective plasma-enhanced atomic layer etching (PE-ALE) of silicon dioxide using a silane coupling agent
In Special Collection:
Atomic Layer Etching (ALE)
J. Vac. Sci. Technol. A 40, 062601 (2022)
https://doi.org/10.1116/6.0002044
Epitaxial Growth of Materials
Growth of (SmxGa1−x)2O3 by molecular beam epitaxy
J. Vac. Sci. Technol. A 40, 062701 (2022)
https://doi.org/10.1116/6.0002135
High thickness uniformity of 2-in. wafer-scale β-Ga2O3 films grown by MOCVD and photoelectrical properties
J. Vac. Sci. Technol. A 40, 062702 (2022)
https://doi.org/10.1116/6.0002069
Growth and characterization of α-Ga2O3 on sapphire and nanocrystalline β-Ga2O3 on diamond substrates by halide vapor phase epitaxy
In Special Collection:
Gallium Oxide Materials and Devices
J. Vac. Sci. Technol. A 40, 062703 (2022)
https://doi.org/10.1116/6.0002115
MOCVD growth and band offsets of κ-phase Ga2O3 on c-plane sapphire, GaN- and AlN-on-sapphire, and (100) YSZ substrates
In Special Collection:
Gallium Oxide Materials and Devices
J. Vac. Sci. Technol. A 40, 062704 (2022)
https://doi.org/10.1116/6.0002106
Mechanistic insights into low-temperature epitaxial growth of aluminum nitride films on layered transition metal dichalcogenides
J. Vac. Sci. Technol. A 40, 062705 (2022)
https://doi.org/10.1116/6.0002137
Metalorganic chemical vapor deposition of (100) β-Ga2O3 on on-axis Ga2O3 substrates
In Special Collection:
Gallium Oxide Materials and Devices
J. Vac. Sci. Technol. A 40, 062706 (2022)
https://doi.org/10.1116/6.0002179
Epitaxial growth of the first two members of the Ban+1InnO2.5n+1 Ruddlesden–Popper homologous series
In Special Collection:
Thin Film Deposition for Materials Discovery
J. Vac. Sci. Technol. A 40, 062707 (2022)
https://doi.org/10.1116/6.0002205
Quantitative x-ray diffraction analysis of strain and interdiffusion in β-Ga2O3 superlattices of μ-Fe2O3 and β-(AlxGa1−x)2O3
In Special Collection:
Thin Film Deposition for Materials Discovery
J. Vac. Sci. Technol. A 40, 062708 (2022)
https://doi.org/10.1116/6.0002207
Plasma Science and Technology
Effects of frequency and pulse width on electron density, hydrogen peroxide generation, and perfluorooctanoic acid mineralization in a nanosecond pulsed discharge gas-liquid plasma reactor
In Special Collection:
Atmospheric Plasma-Liquid Interfaces
J. Vac. Sci. Technol. A 40, 063001 (2022)
https://doi.org/10.1116/6.0001992
Electric discharge initiation in water with gas bubbles: A time scale approach
In Special Collection:
Atmospheric Plasma-Liquid Interfaces
J. Vac. Sci. Technol. A 40, 063002 (2022)
https://doi.org/10.1116/6.0001990
Harmonic suppression and uniformity improvement of plasma density in capacitively coupled plasma
J. Vac. Sci. Technol. A 40, 063003 (2022)
https://doi.org/10.1116/6.0002016
SiO2 etching and surface evolution using combined exposure to CF4/O2 remote plasma and electron beam
J. Vac. Sci. Technol. A 40, 063004 (2022)
https://doi.org/10.1116/6.0002038
Inner surface modification of polyethylene tubing induced by dielectric barrier discharge plasma
J. Vac. Sci. Technol. A 40, 063005 (2022)
https://doi.org/10.1116/5.0119895
Molecular dynamics simulation of oxide-nitride bilayer etching with energetic fluorocarbon ions
J. Vac. Sci. Technol. A 40, 063006 (2022)
https://doi.org/10.1116/6.0002182
Comprehensive ion-molecule reactive collision model for processing plasmas
J. Vac. Sci. Technol. A 40, 063007 (2022)
https://doi.org/10.1116/6.0002098
Effect of ozone and humidity addition on hydrogen peroxide generation characteristics of plasmas in oxygen bubbles
In Special Collection:
Atmospheric Plasma-Liquid Interfaces
J. Vac. Sci. Technol. A 40, 063008 (2022)
https://doi.org/10.1116/6.0001861
Effects of metal redeposition in plasma sputtering
J. Vac. Sci. Technol. A 40, 063009 (2022)
https://doi.org/10.1116/6.0002204
Surface Engineering and Coatings
Flexible multifunctional hard coatings based on chromium oxynitride for pressure-sensing applications
In Special Collection:
Functional Coatings
J. Vac. Sci. Technol. A 40, 063101 (2022)
https://doi.org/10.1116/6.0002060
Bandgap engineering of indium gallium nitride layers grown by plasma-enhanced chemical vapor deposition
J. Vac. Sci. Technol. A 40, 063102 (2022)
https://doi.org/10.1116/6.0002039
Morphological changes of nanostructures on silicon induced by C60-ion irradiation
J. Vac. Sci. Technol. A 40, 063103 (2022)
https://doi.org/10.1116/6.0002073
Surfaces and Interfaces
Guide to XPS data analysis: Applying appropriate constraints to synthetic peaks in XPS peak fitting
In Special Collection:
Reproducibility Challenges and Solutions II with a Focus on Surface and Interface Analysis
J. Vac. Sci. Technol. A 40, 063201 (2022)
https://doi.org/10.1116/6.0001975
Characterization of vacuum ultraviolet-irradiated surface modification of CoO(111) crystal by low-energy atom scattering spectroscopy
J. Vac. Sci. Technol. A 40, 063202 (2022)
https://doi.org/10.1116/6.0001971
Modification of a force field for molecular dynamics simulations of silicon etching by chlorine atoms
J. Vac. Sci. Technol. A 40, 063203 (2022)
https://doi.org/10.1116/6.0002027
Nanometer-scale depth-resolved hard x-ray absorption spectroscopy based on the detection of energy-loss Auger electrons with low energies
J. Vac. Sci. Technol. A 40, 063204 (2022)
https://doi.org/10.1116/6.0002131
Practical guide on chemometrics/informatics in x-ray photoelectron spectroscopy (XPS). II. Example applications of multiple methods to the degradation of cellulose and tartaric acid
In Special Collection:
Reproducibility Challenges and Solutions II with a Focus on Surface and Interface Analysis
J. Vac. Sci. Technol. A 40, 063205 (2022)
https://doi.org/10.1116/6.0001969
Practical guide on chemometrics/informatics in x-ray photoelectron spectroscopy (XPS). I. Introduction to methods useful for large or complex datasets
In Special Collection:
Reproducibility Challenges and Solutions II with a Focus on Surface and Interface Analysis
J. Vac. Sci. Technol. A 40, 063206 (2022)
https://doi.org/10.1116/6.0002082
Thin Films
Growth behavior and substrate selective deposition of polypyrrole, polythiophene, and polyaniline by oxidative chemical vapor deposition and molecular layer deposition
In Special Collection:
Area Selective Deposition
J. Vac. Sci. Technol. A 40, 063401 (2022)
https://doi.org/10.1116/6.0002036
Deposition of tungsten oxide films by reactive magnetron sputtering on different substrates
J. Vac. Sci. Technol. A 40, 063402 (2022)
https://doi.org/10.1116/6.0002012
Zn dots coherently grown as the seed and buffer layers on Si(111) for ZnO thin film: Mechanism, in situ analysis, and simulation
J. Vac. Sci. Technol. A 40, 063403 (2022)
https://doi.org/10.1116/5.0106583
Effect of SiO2 buffer layer on phase transition properties of VO2 films fabricated by low-pressure chemical vapor deposition
J. Vac. Sci. Technol. A 40, 063404 (2022)
https://doi.org/10.1116/6.0002146
Physicochemically reformed tin oxide film fabricated for self-alignment of liquid crystals
J. Vac. Sci. Technol. A 40, 063406 (2022)
https://doi.org/10.1116/6.0002072
Temperature dependence of on–off ratio and reverse recovery time in NiO/β-Ga2O3 heterojunction rectifiers
J. Vac. Sci. Technol. A 40, 063407 (2022)
https://doi.org/10.1116/6.0002186
Type II band alignment of NiO/α-Ga2O3 for annealing temperatures up to 600 °C
In Special Collection:
Gallium Oxide Materials and Devices
J. Vac. Sci. Technol. A 40, 063408 (2022)
https://doi.org/10.1116/6.0002257
