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Issues
Letters
Diffusion-assisted molecular beam epitaxy of CuCrO2 thin films
In Special Collection:
Thin Film Deposition for Materials Discovery
J. Vac. Sci. Technol. A 40, 060401 (2022)
https://doi.org/10.1116/6.0002151
Homogeneous high In content InxGa1−x N films by supercycle atomic layer deposition
In Special Collection:
Atomic Layer Deposition (ALD)
Chih-Wei Hsu; Ivan Martinovic; Roger Magnusson; Babak Bakhit; Justinas Palisaitis; Per. O. Å. Persson; Polla Rouf; Henrik Pedersen
J. Vac. Sci. Technol. A 40, 060402 (2022)
https://doi.org/10.1116/6.0002079
Review Articles
Photoelectron spectroscopic studies on metal halide perovskite materials
In Special Collection:
Commemorating the Career of David Arthur Shirley
J. Vac. Sci. Technol. A 40, 060801 (2022)
https://doi.org/10.1116/6.0001903
Critical review of Ohmic and Schottky contacts to β-Ga2O3
In Special Collection:
Gallium Oxide Materials and Devices
J. Vac. Sci. Technol. A 40, 060802 (2022)
https://doi.org/10.1116/6.0002144
Hydrogen permeation barriers and preparation techniques: A review
In Special Collection:
Functional Coatings
Shu Xiao; Xinyu Meng; Kejun Shi; Liangliang Liu; Hao Wu; Weiqi Lian; Chilou Zhou; Yunrong Lyu; Paul K. Chu
J. Vac. Sci. Technol. A 40, 060803 (2022)
https://doi.org/10.1116/6.0002178
ARTICLES
2-D Materials
Nucleation and growth of molybdenum disulfide grown by thermal atomic layer deposition on metal oxides
Jake Soares; Steven Letourneau; Matthew Lawson; Anil U. Mane; Yu Lu; Yaqiao Wu; Steven M. Hues; Lan Li; Jeffrey W. Elam; Elton Graugnard
J. Vac. Sci. Technol. A 40, 062202 (2022)
https://doi.org/10.1116/6.0002024
Atomic Layer Deposition (ALD)
Synthesis and characteristics of Sn-doped SiO2 via plasma-enhanced atomic layer deposition for self-aligned patterning
In Special Collection:
Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 40, 062401 (2022)
https://doi.org/10.1116/6.0001895
Simple thermal vapor deposition process for and characterization of n-type indium oxysulfide thin films
J. Vac. Sci. Technol. A 40, 062402 (2022)
https://doi.org/10.1116/6.0001997
In situ spectroscopic ellipsometry and rigorous coupled wave analysis for real time profile evolution of atomic layer deposited films inside SiO2 nanotrenches
In Special Collection:
Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 40, 062403 (2022)
https://doi.org/10.1116/6.0001937
Fluidized-bed plasma enhanced atomic layer deposition of Pd catalyst for low-temperature CO oxidation
J. Vac. Sci. Technol. A 40, 062404 (2022)
https://doi.org/10.1116/6.0001946
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Jeffrey M. Woodward; Samantha G. Rosenberg; David R. Boris; Michael J. Johnson; Scott G. Walton; Scooter D. Johnson; Zachary R. Robinson; Neeraj Nepal; Karl F. Ludwig, Jr.; Jennifer K. Hite; Charles R. Eddy, Jr.
J. Vac. Sci. Technol. A 40, 062405 (2022)
https://doi.org/10.1116/6.0002021
Low temperature, area-selective atomic layer deposition of NiO and Ni
In Special Collection:
Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 40, 062406 (2022)
https://doi.org/10.1116/6.0002068
Temperature study of atmospheric-pressure plasma-enhanced spatial ALD of Al2O3 using infrared and optical emission spectroscopy
In Special Collection:
Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 40, 062407 (2022)
https://doi.org/10.1116/6.0002158
Machine learning and atomic layer deposition: Predicting saturation times from reactor growth profiles using artificial neural networks
In Special Collection:
Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 40, 062408 (2022)
https://doi.org/10.1116/6.0001973
Packing of inhibitor molecules during area-selective atomic layer deposition studied using random sequential adsorption simulations
In Special Collection:
Area Selective Deposition
J. Li; I. Tezsevin; M. J. M. Merkx; J. F. W. Maas; W. M. M. Kessels; T. E. Sandoval; A. J. M. Mackus
J. Vac. Sci. Technol. A 40, 062409 (2022)
https://doi.org/10.1116/6.0002096
Moisture barrier coating of AlN and Al2O3 multilayer film prepared by low-temperature atomic layer deposition
In Special Collection:
Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 40, 062410 (2022)
https://doi.org/10.1116/6.0002057
Atomic layer deposition of MoNx thin films using a newly synthesized liquid Mo precursor
In Special Collection:
Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 40, 062411 (2022)
https://doi.org/10.1116/6.0002154
Area selective deposition of ruthenium on 3D structures
In Special Collection:
Area Selective Deposition
Kartik Sondhi; Rahul Sharangpani; Ramy Nashed Bassely Said; Joyeeta Nag; Michael Gribelyuk; Senaka Kanakamedala; Raghuveer S. Makala
J. Vac. Sci. Technol. A 40, 062412 (2022)
https://doi.org/10.1116/6.0002148
Role of ZnO and MgO interfaces on the growth and optoelectronic properties of atomic layer deposited Zn1−xMgxO films
In Special Collection:
Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 40, 062413 (2022)
https://doi.org/10.1116/6.0001925
Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition
In Special Collection:
Atomic Layer Deposition (ALD)
Oili M. E. Ylivaara; Andreas Langner; Satu Ek; Jari Malm; Jaakko Julin; Mikko Laitinen; Saima Ali; Sakari Sintonen; Harri Lipsanen; Timo Sajavaara; Riikka L. Puurunen
J. Vac. Sci. Technol. A 40, 062414 (2022)
https://doi.org/10.1116/6.0002095
Atomic Layer Etching (ALE)
Area-selective plasma-enhanced atomic layer etching (PE-ALE) of silicon dioxide using a silane coupling agent
In Special Collection:
Atomic Layer Etching (ALE)
Airah P. Osonio; Takayoshi Tsutsumi; Yoshinari Oda; Bablu Mukherjee; Ranjit Borude; Nobuyoshi Kobayashi; Masaru Hori
J. Vac. Sci. Technol. A 40, 062601 (2022)
https://doi.org/10.1116/6.0002044
Epitaxial Growth of Materials
Growth of (SmxGa1−x)2O3 by molecular beam epitaxy
J. Vac. Sci. Technol. A 40, 062701 (2022)
https://doi.org/10.1116/6.0002135
High thickness uniformity of 2-in. wafer-scale β-Ga2O3 films grown by MOCVD and photoelectrical properties
J. Vac. Sci. Technol. A 40, 062702 (2022)
https://doi.org/10.1116/6.0002069
Growth and characterization of α-Ga2O3 on sapphire and nanocrystalline β-Ga2O3 on diamond substrates by halide vapor phase epitaxy
In Special Collection:
Gallium Oxide Materials and Devices
Sushrut Modak; James Spencer Lundh; Nahid Sultan Al-Mamun; Leonid Chernyak; Aman Haque; Thieu Quang Tu; Akito Kuramata; Marko J. Tadjer; Stephen J. Pearton
J. Vac. Sci. Technol. A 40, 062703 (2022)
https://doi.org/10.1116/6.0002115
MOCVD growth and band offsets of κ-phase Ga2O3 on c-plane sapphire, GaN- and AlN-on-sapphire, and (100) YSZ substrates
In Special Collection:
Gallium Oxide Materials and Devices
J. Vac. Sci. Technol. A 40, 062704 (2022)
https://doi.org/10.1116/6.0002106
Mechanistic insights into low-temperature epitaxial growth of aluminum nitride films on layered transition metal dichalcogenides
Tung Chen Hsieh; Yu-Ming Liao; Wei-Fan Hsu; Hui-Ling Kao; Yu-Che Huang; Shu-Jui Chang; Yu-Shian Chen; Ya-Ping Hsieh
J. Vac. Sci. Technol. A 40, 062705 (2022)
https://doi.org/10.1116/6.0002137
Metalorganic chemical vapor deposition of (100) β-Ga2O3 on on-axis Ga2O3 substrates
In Special Collection:
Gallium Oxide Materials and Devices
J. Vac. Sci. Technol. A 40, 062706 (2022)
https://doi.org/10.1116/6.0002179
Epitaxial growth of the first two members of the Ban+1InnO2.5n+1 Ruddlesden–Popper homologous series
In Special Collection:
Thin Film Deposition for Materials Discovery
Felix V. E. Hensling; Michelle A. Smeaton; Veronica Show; Kathy Azizie; Matthew R. Barone; Lena F. Kourkoutis; Darrell G. Schlom
J. Vac. Sci. Technol. A 40, 062707 (2022)
https://doi.org/10.1116/6.0002205
Quantitative x-ray diffraction analysis of strain and interdiffusion in β-Ga2O3 superlattices of μ-Fe2O3 and β-(AlxGa1−x)2O3
In Special Collection:
Thin Film Deposition for Materials Discovery
Elline C. Hettiaratchy; Binbin Wang; Ashok Dheenan; Joe McGlone; Nidhin Kurian Kalarickal; Núria Bagués; Steven Ringel; David W. McComb; Siddharth Rajan; Roberto C. Myers
J. Vac. Sci. Technol. A 40, 062708 (2022)
https://doi.org/10.1116/6.0002207
Plasma Science and Technology
Effects of frequency and pulse width on electron density, hydrogen peroxide generation, and perfluorooctanoic acid mineralization in a nanosecond pulsed discharge gas-liquid plasma reactor
In Special Collection:
Atmospheric Plasma-Liquid Interfaces
Radha Krishna Murthy Bulusu; Shurik Yatom; Christopher W. Patterson; Robert J. Wandell; Bruce R. Locke
J. Vac. Sci. Technol. A 40, 063001 (2022)
https://doi.org/10.1116/6.0001992
Electric discharge initiation in water with gas bubbles: A time scale approach
In Special Collection:
Atmospheric Plasma-Liquid Interfaces
J. Vac. Sci. Technol. A 40, 063002 (2022)
https://doi.org/10.1116/6.0001990
Harmonic suppression and uniformity improvement of plasma density in capacitively coupled plasma
J. Vac. Sci. Technol. A 40, 063003 (2022)
https://doi.org/10.1116/6.0002016
SiO2 etching and surface evolution using combined exposure to CF4/O2 remote plasma and electron beam
Kang-Yi Lin; Christian Preischl; Christian Felix Hermanns; Daniel Rhinow; Hans-Michael Solowan; Michael Budach; Klaus Edinger; G. S. Oehrlein
J. Vac. Sci. Technol. A 40, 063004 (2022)
https://doi.org/10.1116/6.0002038
Inner surface modification of polyethylene tubing induced by dielectric barrier discharge plasma
Lee Organski; Xingxing Wang; Andrew Myers; Yun-Chu Chen; Kinam Park; Sarena D. Horava; Coralie A. Richard; Yoon Yeo; Alexey Shashurin
J. Vac. Sci. Technol. A 40, 063005 (2022)
https://doi.org/10.1116/5.0119895
Molecular dynamics simulation of oxide-nitride bilayer etching with energetic fluorocarbon ions
J. Vac. Sci. Technol. A 40, 063006 (2022)
https://doi.org/10.1116/6.0002182
Comprehensive ion-molecule reactive collision model for processing plasmas
J. Vac. Sci. Technol. A 40, 063007 (2022)
https://doi.org/10.1116/6.0002098
Effect of ozone and humidity addition on hydrogen peroxide generation characteristics of plasmas in oxygen bubbles
In Special Collection:
Atmospheric Plasma-Liquid Interfaces
J. Vac. Sci. Technol. A 40, 063008 (2022)
https://doi.org/10.1116/6.0001861
Effects of metal redeposition in plasma sputtering
J. Vac. Sci. Technol. A 40, 063009 (2022)
https://doi.org/10.1116/6.0002204
Surface Engineering and Coatings
Flexible multifunctional hard coatings based on chromium oxynitride for pressure-sensing applications
In Special Collection:
Functional Coatings
J. Vac. Sci. Technol. A 40, 063101 (2022)
https://doi.org/10.1116/6.0002060
Bandgap engineering of indium gallium nitride layers grown by plasma-enhanced chemical vapor deposition
Jonathan Emanuel Thomet; Aman Kamlesh Singh; Mélanie Nelly Rouèche; Nils Toggwyler; Franz-Josef Haug; Gabriel Christmann; Sylvain Nicolay; Christophe Ballif; Nicolas Wyrsch; Aïcha Hessler-Wyser; Mathieu Boccard
J. Vac. Sci. Technol. A 40, 063102 (2022)
https://doi.org/10.1116/6.0002039
Morphological changes of nanostructures on silicon induced by C60-ion irradiation
Naoto Oishi; Yoshiki Murao; Noriko Nitta; Hidetsugu Tsuchida; Shigeo Tomita; Kimikazu Sasa; Kouichi Hirata; Hiromi Shibata; Yoshimi Hirano; Keisuke Yamada; Atsuya Chiba; Yuichi Saitoh; Kazumasa Narumi; Yasushi Hoshino
J. Vac. Sci. Technol. A 40, 063103 (2022)
https://doi.org/10.1116/6.0002073
Surfaces and Interfaces
Guide to XPS data analysis: Applying appropriate constraints to synthetic peaks in XPS peak fitting
In Special Collection:
Reproducibility Challenges and Solutions II with a Focus on Surface and Interface Analysis
J. Vac. Sci. Technol. A 40, 063201 (2022)
https://doi.org/10.1116/6.0001975
Characterization of vacuum ultraviolet-irradiated surface modification of CoO(111) crystal by low-energy atom scattering spectroscopy
J. Vac. Sci. Technol. A 40, 063202 (2022)
https://doi.org/10.1116/6.0001971
Modification of a force field for molecular dynamics simulations of silicon etching by chlorine atoms
J. Vac. Sci. Technol. A 40, 063203 (2022)
https://doi.org/10.1116/6.0002027
Nanometer-scale depth-resolved hard x-ray absorption spectroscopy based on the detection of energy-loss Auger electrons with low energies
J. Vac. Sci. Technol. A 40, 063204 (2022)
https://doi.org/10.1116/6.0002131
Practical guide on chemometrics/informatics in x-ray photoelectron spectroscopy (XPS). II. Example applications of multiple methods to the degradation of cellulose and tartaric acid
In Special Collection:
Reproducibility Challenges and Solutions II with a Focus on Surface and Interface Analysis
Tahereh G. Avval; Hyrum Haack; Neal Gallagher; David Morgan; Pascal Bargiela; Neal Fairley; Vincent Fernandez; Matthew R. Linford
J. Vac. Sci. Technol. A 40, 063205 (2022)
https://doi.org/10.1116/6.0001969
Practical guide on chemometrics/informatics in x-ray photoelectron spectroscopy (XPS). I. Introduction to methods useful for large or complex datasets
In Special Collection:
Reproducibility Challenges and Solutions II with a Focus on Surface and Interface Analysis
Tahereh G. Avval; Neal Gallagher; David Morgan; Pascal Bargiela; Neal Fairley; Vincent Fernandez; Matthew R. Linford
J. Vac. Sci. Technol. A 40, 063206 (2022)
https://doi.org/10.1116/6.0002082
Thin Films
Growth behavior and substrate selective deposition of polypyrrole, polythiophene, and polyaniline by oxidative chemical vapor deposition and molecular layer deposition
In Special Collection:
Area Selective Deposition
J. Vac. Sci. Technol. A 40, 063401 (2022)
https://doi.org/10.1116/6.0002036
Deposition of tungsten oxide films by reactive magnetron sputtering on different substrates
A. Hrubantova; R. Hippler; H. Wulff; M. Cada; J. Olejnicek; N. Nepomniashchaia; C. A. Helm; Z. Hubicka
J. Vac. Sci. Technol. A 40, 063402 (2022)
https://doi.org/10.1116/6.0002012
Zn dots coherently grown as the seed and buffer layers on Si(111) for ZnO thin film: Mechanism, in situ analysis, and simulation
Wei-Ting Chen; Pei-Cheng Fang; Yen-Wei Chen; Shang-Jui Chiu; Ching-Shun Ku; Sanjaya Brahma; Kuang-Yao Lo
J. Vac. Sci. Technol. A 40, 063403 (2022)
https://doi.org/10.1116/5.0106583
Effect of SiO2 buffer layer on phase transition properties of VO2 films fabricated by low-pressure chemical vapor deposition
J. Vac. Sci. Technol. A 40, 063404 (2022)
https://doi.org/10.1116/6.0002146
Physicochemically reformed tin oxide film fabricated for self-alignment of liquid crystals
Dong Hyun Kim; Dong Wook Lee; Jin Young Oh; Jonghoon Won; Dae-Hyun Kim; Hae-Chang Jeong; Dae-Shik Seo
J. Vac. Sci. Technol. A 40, 063406 (2022)
https://doi.org/10.1116/6.0002072
Temperature dependence of on–off ratio and reverse recovery time in NiO/β-Ga2O3 heterojunction rectifiers
J. Vac. Sci. Technol. A 40, 063407 (2022)
https://doi.org/10.1116/6.0002186
Type II band alignment of NiO/α-Ga2O3 for annealing temperatures up to 600 °C
In Special Collection:
Gallium Oxide Materials and Devices
Xinyi Xia; Jian-Sian Li; Chao-Ching Chiang; Timothy Jinsoo Yoo; Eitan Hershkovitz; Fan Ren; Honggyu Kim; Jihyun Kim; Dae-Woo Jeon; Ji-Hyeon Park; S. J. Pearton
J. Vac. Sci. Technol. A 40, 063408 (2022)
https://doi.org/10.1116/6.0002257