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Chemically assisted sputter etching of permalloy using CO or CL₂

M. J. Vasile; C. J. Mogab

J. Vac. Sci. Technol. A 4, 1841–1849 (1986) https://doi.org/10.1116/1.573775

Abstract

View articletitled, Chemically assisted sputter etching of permalloy using CO or CL2

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Bias‐induced stress transitions in sputtered TiN films

H. P. Kattelus; J. L. Tandon; C. Sala; M.‐A. Nicolet

J. Vac. Sci. Technol. A 4, 1850–1854 (1986) https://doi.org/10.1116/1.573776

Abstract

View articletitled, Bias‐induced stress transitions in sputtered TiN films

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Characterization of reactively magnetron sputtered hydrogenated amorphous silicon films

H. Rübel; B. Schröder; J. Geiger

J. Vac. Sci. Technol. A 4, 1855–1860 (1986) https://doi.org/10.1116/1.573777

Abstract

View articletitled, Characterization of reactively magnetron sputtered hydrogenated amorphous silicon films

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Surface topography development on Teflon under keV Xe atom bombardment

R. Michael; D. Stulik

J. Vac. Sci. Technol. A 4, 1861–1865 (1986) https://doi.org/10.1116/1.573778

Abstract

View articletitled, Surface topography development on Teflon under keV Xe atom bombardment

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Studies of initial oxidation of nickel–chromium alloys: Surface annealing by hydrogen ion bombardment

N. S. McIntyre; L. Kover; T. C. Chan

J. Vac. Sci. Technol. A 4, 1866–1874 (1986) https://doi.org/10.1116/1.573737

Abstract

View articletitled, Studies of initial oxidation of nickel–chromium alloys: Surface annealing by hydrogen ion bombardment

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Reflection anisotropy in evaporated aluminum: Consequences for telescope mirror coatings

J. R. Gee; I. J. Hodgkinson; P. W. Wilson

J. Vac. Sci. Technol. A 4, 1875–1878 (1986) https://doi.org/10.1116/1.573738

Abstract

View articletitled, Reflection anisotropy in evaporated aluminum: Consequences for telescope mirror coatings

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Ejection of neutral and charged particles from CdTe and Cd_0.96Mn_0.04Te induced by pulsed laser irradiation

J. J. Dubowski; P. K. Bhat; D. F. Williams; P. Becla

J. Vac. Sci. Technol. A 4, 1879–1883 (1986) https://doi.org/10.1116/1.573739

Abstract

View articletitled, Ejection of neutral and charged particles from CdTe and Cd0.96Mn0.04Te induced by pulsed laser irradiation

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Two‐grid Auger–low energy electron diffraction system

Yoshikatsu Namba; Toshio Mōri

J. Vac. Sci. Technol. A 4, 1884–1887 (1986) https://doi.org/10.1116/1.573740

Abstract

View articletitled, Two‐grid Auger–low energy electron diffraction system

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A scanned microfocused neutral beam for use in secondary ion mass spectrometry

A. J. Eccles; J. A. van den Berg; A. Brown; J. C. Vickerman

J. Vac. Sci. Technol. A 4, 1888–1892 (1986) https://doi.org/10.1116/1.573741

Abstract

View articletitled, A scanned microfocused neutral beam for use in secondary ion mass spectrometry

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Secondary ion mass spectroscopy analysis of moisture penetration of dielectric films

Edward Barocela

J. Vac. Sci. Technol. A 4, 1893–1896 (1986) https://doi.org/10.1116/1.573742

Abstract

View articletitled, Secondary ion mass spectroscopy analysis of moisture penetration of dielectric films

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Secondary ion mass spectrometry and Auger study of lithium niobate processing for integrated optics

D. Landheer; D. F. Mitchell; G. I. Sproule

J. Vac. Sci. Technol. A 4, 1897–1900 (1986) https://doi.org/10.1116/1.573743

Abstract

View articletitled, Secondary ion mass spectrometry and Auger study of lithium niobate processing for integrated optics

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Relation between flow, power, and presence of carrier gas during plasma deposition of thin films

G. Kaganowicz; J. W. Robinson

J. Vac. Sci. Technol. A 4, 1901–1904 (1986) https://doi.org/10.1116/1.573744

Abstract

View articletitled, Relation between flow, power, and presence of carrier gas during plasma deposition of thin films

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A solution to boron contamination at the substrate/epilayer interface of silicon grown by molecular beam epitaxy

R. A. A. Kubiak; W. Y. Leong; M. G. Dowsett; D. S. McPhail; R. Houghton; E. H. C. Parker

J. Vac. Sci. Technol. A 4, 1905–1907 (1986) https://doi.org/10.1116/1.573745

Abstract

View articletitled, A solution to boron contamination at the substrate/epilayer interface of silicon grown by molecular beam epitaxy

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Statistical treatment of anomalous energy spread in a charged particle beam

Y. Furukawa

J. Vac. Sci. Technol. A 4, 1908–1912 (1986) https://doi.org/10.1116/1.573746

Abstract

View articletitled, Statistical treatment of anomalous energy spread in a charged particle beam

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Electron ray tracing with high accuracy

Kenichi Saito; Tsuneo Okubo; Kiichi Takamoto; Yasumichi Uno; Mamoru Kondo

J. Vac. Sci. Technol. A 4, 1913–1917 (1986) https://doi.org/10.1116/1.573747

Abstract

View articletitled, Electron ray tracing with high accuracy

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Particle and impurity control in toroidal fusion devices

A. J. Wootton

J. Vac. Sci. Technol. A 4, 1918–1932 (1986) https://doi.org/10.1116/1.573748

Abstract

View articletitled, Particle and impurity control in toroidal fusion devices

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Cleanup and gettering during the Beryllium Limiter Experiment in Impurity Study Experiment‐B

R. E. Clausing; L. Heatherly; J. von Seggern; K. G. Tschersich; R. C. Isler; P. K. Mioduszewski; J. E. Simpkins; R. A. Zuhr

J. Vac. Sci. Technol. A 4, 1933–1938 (1986) https://doi.org/10.1116/1.573749

Abstract

View articletitled, Cleanup and gettering during the Beryllium Limiter Experiment in Impurity Study Experiment‐B

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Bakeout controller for the use of helium closed‐cycle refrigerators in ultrahigh vacuum applications

Francis G. Celii; Paul M. Whitmore; Kenneth C. Janda

J. Vac. Sci. Technol. A 4, 1939–1941 (1986) https://doi.org/10.1116/1.573750

Abstract

View articletitled, Bakeout controller for the use of helium closed‐cycle refrigerators in ultrahigh vacuum applications

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A variable temperature sample stage for the Cameca IMS 3F secondary ion microanalyzer

Steven M. Hues; Peter Williams

J. Vac. Sci. Technol. A 4, 1942–1943 (1986) https://doi.org/10.1116/1.573751

View articletitled, A variable temperature sample stage for the Cameca IMS 3F secondary ion microanalyzer

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A fast entry air‐lock‐compatible hot stage for the collection of Auger electron spectra at elevated temperatures

P. R. Underhill; K. A. Ellison; W. W. Smeltzer

J. Vac. Sci. Technol. A 4, 1944–1945 (1986) https://doi.org/10.1116/1.573752

Abstract

View articletitled, A fast entry air‐lock‐compatible hot stage for the collection of Auger electron spectra at elevated temperatures

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An ultrahigh vacuum compatible fluorine atom source for gas–surface reaction studies

C. D. Stinespring; A. Freedman; C. E. Kolb

J. Vac. Sci. Technol. A 4, 1946–1947 (1986) https://doi.org/10.1116/1.573753

View articletitled, An ultrahigh vacuum compatible fluorine atom source for gas–surface reaction studies

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Improved method for vacuum deposition of insulating films

R. C. Blanchet; C. A. Santinelli

J. Vac. Sci. Technol. A 4, 1948–1949 (1986) https://doi.org/10.1116/1.573754

View articletitled, Improved method for vacuum deposition of insulating films

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Design of an ultralow coverage metal evaporator based on a geometric factor

K. K. Chin; P. McKernan; I. Lindau

J. Vac. Sci. Technol. A 4, 1949–1951 (1986) https://doi.org/10.1116/1.573755

Abstract

View articletitled, Design of an ultralow coverage metal evaporator based on a geometric factor

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The use of polytetrafluoroethylene bearings in ultrahigh vacuum

R. A. A. Kubiak; P. Driscoll; V. Manning; R. Houghton

J. Vac. Sci. Technol. A 4, 1951–1952 (1986) https://doi.org/10.1116/1.573756

Abstract

View articletitled, The use of polytetrafluoroethylene bearings in ultrahigh vacuum

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Erratum: Hydrogen vibrational population distributions and negative ion generation in tandem high density hydrogen discharges [J. Vac. Sci. Technol. A 3, 1229 (1985)]

J. R. Hiskes; A. M. Karo; P. A. Willmann

J. Vac. Sci. Technol. A 4, 1953 (1986) https://doi.org/10.1116/1.573757

View articletitled, Erratum: Hydrogen vibrational population distributions and negative ion generation in tandem high density hydrogen discharges [J. Vac. Sci. Technol. A 3, 1229 (1985)]

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Correlations in pseudobinary alloys

Arden Sher; An‐Ban Chen; Mark van Schilfgaarde

J. Vac. Sci. Technol. A 4, 1965–1970 (1986) https://doi.org/10.1116/1.574008

Abstract

View articletitled, Correlations in pseudobinary alloys

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Structural studies of Cd_0.95Zn_0.05Te and Cd_0.90Mn_0.10Te under pressure

S. B. Qadri; E. F. Skelton; A. W. Webb; J. Kennedy

J. Vac. Sci. Technol. A 4, 1971–1973 (1986) https://doi.org/10.1116/1.574009

Abstract

View articletitled, Structural studies of Cd0.95Zn0.05Te and Cd0.90Mn0.10Te under pressure

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High pressure studies of Hg_0.8Cd_0.2Te

S. B. Qadri; E. F. Skelton; A. W. Webb; J. Dinan

J. Vac. Sci. Technol. A 4, 1974–1976 (1986) https://doi.org/10.1116/1.574010

Abstract

View articletitled, High pressure studies of Hg0.8Cd0.2Te

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The Ag/(Hg,Cd)Te and Al/(Hg,Cd)Te interfaces

D. J. Friedman; G. P. Carey; C. K. Shih; I. Lindau; W. E. Spicer; J. A. Wilson

J. Vac. Sci. Technol. A 4, 1977–1982 (1986) https://doi.org/10.1116/1.574011

Abstract

View articletitled, The Ag/(Hg,Cd)Te and Al/(Hg,Cd)Te interfaces

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Summary Abstract: State characterization of the Hg_1−xCd_xTe/Photox SiO₂ interface

G.‐H. Tsau; A. Sher; M. Madou; J. A. Wilson; V. A. Cotton; C. E. Jones

J. Vac. Sci. Technol. A 4, 1983–1985 (1986) https://doi.org/10.1116/1.574012

View articletitled, Summary Abstract: State characterization of the Hg1−xCdxTe/Photox SiO2 interface

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Gate‐controlled Hg_1−xCd_xTe photodiodes passivated with native sulfides

Y. Nemirovsky; R. Adar; A. Kornfeld; I. Kidron

J. Vac. Sci. Technol. A 4, 1986–1991 (1986) https://doi.org/10.1116/1.574013

Abstract

View articletitled, Gate‐controlled Hg1−xCdxTe photodiodes passivated with native sulfides

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Composition and growth mechanism of anodic oxide on Hg_(1−x)Cd_xTe

R. L. Strong; J. M. Anthony; B. E. Gnade; J. A. Keenan; E. Norbeck; L. W. Li; C. R. Helms

J. Vac. Sci. Technol. A 4, 1992–1996 (1986) https://doi.org/10.1116/1.574014

Abstract

View articletitled, Composition and growth mechanism of anodic oxide on Hg(1−x)CdxTe

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Electron beam induced Hg desorption and the electronic structure of the Hg depleted surface of Hg₁_−xCd_xTe

C. K. Shih; D. J. Friedman; K. A. Bertness; I. Lindau; W. E. Spicer; J. A. Wilson

J. Vac. Sci. Technol. A 4, 1997–2001 (1986) https://doi.org/10.1116/1.574015

Abstract

View articletitled, Electron beam induced Hg desorption and the electronic structure of the Hg depleted surface of Hg1−xCdxTe

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Diluted magnetic semiconductors: Issues and opportunities

J. K. Furdyna

J. Vac. Sci. Technol. A 4, 2002–2009 (1986) https://doi.org/10.1116/1.574016

Abstract

View articletitled, Diluted magnetic semiconductors: Issues and opportunities

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Bonding and stability in narrow‐gap ternary semiconductors for infrared applications

A. Wall; C. Caprile; A. Franciosi; M. Vaziri; R. Reifenberger; J. K. Furdyna

J. Vac. Sci. Technol. A 4, 2010–2013 (1986) https://doi.org/10.1116/1.574017

Abstract

View articletitled, Bonding and stability in narrow‐gap ternary semiconductors for infrared applications

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Infrared photovoltaic detectors utilizing Hg_1−xMn_xTe and Hg_1−x−yCd_xMn_yTe alloys

P. Becla

J. Vac. Sci. Technol. A 4, 2014–2018 (1986) https://doi.org/10.1116/1.574018

Abstract

View articletitled, Infrared photovoltaic detectors utilizing Hg1−xMnxTe and Hg1−x−yCdxMnyTe alloys

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The magnetic field influence on the photovoltaic effect in Mn alloyed semiconductors

S. Wong; P. Becla

J. Vac. Sci. Technol. A 4, 2019–2023 (1986) https://doi.org/10.1116/1.574019

Abstract

View articletitled, The magnetic field influence on the photovoltaic effect in Mn alloyed semiconductors

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Properties of Hg_1−xZn_xTe grown by liquid‐phase epitaxy

Ariel Sher; D. Eger; A. Zemel; H. Feldstein; A. Raizman

J. Vac. Sci. Technol. A 4, 2024–2027 (1986) https://doi.org/10.1116/1.574020

Abstract

View articletitled, Properties of Hg1−xZnxTe grown by liquid‐phase epitaxy

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Photoreflectance study of Hg_0.7Cd_0.3Te and Cd_1−xZn_xTe: E₁ transition

P. M. Amirtharaj; J. H. Dinan; J. J. Kennedy; P. R. Boyd; O. J. Glembocki

J. Vac. Sci. Technol. A 4, 2028–2033 (1986) https://doi.org/10.1116/1.574021

Abstract

View articletitled, Photoreflectance study of Hg0.7Cd0.3Te and Cd1−xZnxTe: E1 transition

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Nonlinear optical characterization of Hg_1−xCd_xTe using two‐photon absorption techniques

D. G. Seiler; S. W. McClure; R. J. Justice; M. R. Loloee; D. A. Nelson

J. Vac. Sci. Technol. A 4, 2034–2039 (1986) https://doi.org/10.1116/1.574022

Abstract

View articletitled, Nonlinear optical characterization of Hg1−xCdxTe using two‐photon absorption techniques

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Variable magnetic field Hall effect measurements and analyses of high purity, Hg vacancy (p‐type) HgCdTe

M. C. Gold; D. A. Nelson

J. Vac. Sci. Technol. A 4, 2040–2046 (1986) https://doi.org/10.1116/1.574023

Abstract

View articletitled, Variable magnetic field Hall effect measurements and analyses of high purity, Hg vacancy (p‐type) HgCdTe

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Characterization of impurities in p‐type HgCdTe by photo‐Hall techniques

F. J. Bartoli; C. A. Hoffman; J. R. Meyer

J. Vac. Sci. Technol. A 4, 2047–2050 (1986) https://doi.org/10.1116/1.574024

Abstract

View articletitled, Characterization of impurities in p‐type HgCdTe by photo‐Hall techniques

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Infrared absorption spectroscopy of pure and Cu doped CdTe

J. Bajaj; S. H. Shin; P. R. Newman; J. E. Huffman; M. G. Stapelbroek

J. Vac. Sci. Technol. A 4, 2051–2055 (1986) https://doi.org/10.1116/1.574025

Abstract

View articletitled, Infrared absorption spectroscopy of pure and Cu doped CdTe

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Noncontact electrical characterization of epitaxial HgCdTe

C. E. Jones; M. E. Boyd; W. H. Konkel; S. Perkowitz; R. Braunstein

J. Vac. Sci. Technol. A 4, 2056–2060 (1986) https://doi.org/10.1116/1.574026

Abstract

View articletitled, Noncontact electrical characterization of epitaxial HgCdTe

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Growth of HgCdTe and other Hg‐based films and multilayers by molecular beam epitaxy

K. A. Harris; S. Hwang; D. K. Blanks; J. W. Cook, Jr.; J. F. Schetzina; N. Otsuka

J. Vac. Sci. Technol. A 4, 2061–2066 (1986) https://doi.org/10.1116/1.574027

Abstract

View articletitled, Growth of HgCdTe and other Hg‐based films and multilayers by molecular beam epitaxy

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Molecular beam epitaxial growth and characterization of HgCdTe, HgZnTe, and HgMnTe on GaAs(100)

J. P. Faurie; J. Reno; S. Sivananthan; I. K. Sou; X. Chu; M. Boukerche; P. S. Wijewarnasuriya

J. Vac. Sci. Technol. A 4, 2067–2071 (1986) https://doi.org/10.1116/1.574028

Abstract

View articletitled, Molecular beam epitaxial growth and characterization of HgCdTe, HgZnTe, and HgMnTe on GaAs(100)

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Electrical properties of molecular beam epitaxy produced HgCdTe layers doped during growth

M. Boukerche; P. S. Wijewarnasuriya; J. Reno; I. K. Sou; J. P. Faurie

J. Vac. Sci. Technol. A 4, 2072–2076 (1986) https://doi.org/10.1116/1.574029

Abstract

View articletitled, Electrical properties of molecular beam epitaxy produced HgCdTe layers doped during growth

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Hall and electroreflectance studies of the effects of doping in mercury–cadmium telluride grown by molecular‐beam epitaxy

Paul M. Raccah; J. W. Garland; Z. Zhang; Amy H. M. Chu; J. Reno; I. K. Sou; M. Boukerche; J. P. Faurie

J. Vac. Sci. Technol. A 4, 2077–2080 (1986) https://doi.org/10.1116/1.574030

Abstract

View articletitled, Hall and electroreflectance studies of the effects of doping in mercury–cadmium telluride grown by molecular‐beam epitaxy

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Characterization of molecular beam epitaxially grown HgCdTe on CdTe and InSb buffer layers

A. J. Noreika; R. F. C. Farrow; F. A. Shirland; W. J. Takei; J. Greggi, Jr.; S. Wood; W. J. Choyke

J. Vac. Sci. Technol. A 4, 2081–2085 (1986) https://doi.org/10.1116/1.574031

Abstract

View articletitled, Characterization of molecular beam epitaxially grown HgCdTe on CdTe and InSb buffer layers

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HgTe and CdTe epitaxial layers and HgTe–CdTe superlattices grown by laser molecular beam epitaxy

J. T. Cheung; G. Niizawa; J. Moyle; N. P. Ong; B. M. Paine; T. Vreeland, Jr.

J. Vac. Sci. Technol. A 4, 2086–2090 (1986) https://doi.org/10.1116/1.574032

Abstract

View articletitled, HgTe and CdTe epitaxial layers and HgTe–CdTe superlattices grown by laser molecular beam epitaxy

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Superlattices: Progress and prospects

T. C. McGill; G. Y. Wu; S. R. Hetzler

J. Vac. Sci. Technol. A 4, 2091–2095 (1986) https://doi.org/10.1116/1.574033

Abstract

View articletitled, Superlattices: Progress and prospects

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Present status of molecular beam epitaxial growth and properties of HgTe–CdTe superlattices

J. P. Faurie; S. Sivananthan; J. Reno

J. Vac. Sci. Technol. A 4, 2096–2100 (1986) https://doi.org/10.1116/1.574034

Abstract

View articletitled, Present status of molecular beam epitaxial growth and properties of HgTe–CdTe superlattices

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Interdiffusion in HgTe–CdTe superlattices

David K. Arch; J. P. Faurie; J.‐L. Staudenmann; Mary Hibbs‐Brenner; Peter Chow

J. Vac. Sci. Technol. A 4, 2101–2105 (1986) https://doi.org/10.1116/1.574035

Abstract

View articletitled, Interdiffusion in HgTe–CdTe superlattices

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The effect of interdiffusion on the shape of HgTe/CdTe superlattices

K. R. Zanio

J. Vac. Sci. Technol. A 4, 2106–2109 (1986) https://doi.org/10.1116/1.574036

Abstract

View articletitled, The effect of interdiffusion on the shape of HgTe/CdTe superlattices

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Infrared absorption measurement and analysis of HgTe–CdTe superlattices

J. P. Baukus; A. T. Hunter; O. J. Marsh; C. E. Jones; G. Y. Wu; S. R. Hetzler; T. C. McGill; J. P. Faurie

J. Vac. Sci. Technol. A 4, 2110–2113 (1986) https://doi.org/10.1116/1.574037

Abstract

View articletitled, Infrared absorption measurement and analysis of HgTe–CdTe superlattices

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Summary Abstract: HgTe–CdTe: A type‐III superlattice?

J. N. Schulman; Yia‐Chung Chang

J. Vac. Sci. Technol. A 4, 2114–2116 (1986) https://doi.org/10.1116/1.574038

View articletitled, Summary Abstract: HgTe–CdTe: A type‐III superlattice?

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(100) and (111) oriented superlattices of (Cd,Mn)Te on (100)GaAs

R. L. Gunshor; L. A. Kolodziejski; N. Otsuka; S. K. Chang; A. V. Nurmikko

J. Vac. Sci. Technol. A 4, 2117–2119 (1986) https://doi.org/10.1116/1.574039

Abstract

View articletitled, (100) and (111) oriented superlattices of (Cd,Mn)Te on (100)GaAs

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Strain effects in Cd_1−xMn_xTe–CdTe superlattices

D. K. Blanks; R. N. Bicknell; N. C. Giles‐Taylor; J. F. Schetzina; A. Petrou; J. Warnock

J. Vac. Sci. Technol. A 4, 2120–2125 (1986) https://doi.org/10.1116/1.574040

Abstract

View articletitled, Strain effects in Cd1−xMnxTe–CdTe superlattices

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Stimulated emission from Cd_1−xMn_xTe–CdTe heterostructures and Cd_1−xMn_xTe–Cd_1−yMn_yTe multiple quantum well structures

R. N. Bicknell; N. C. Giles‐Taylor; J. F. Schetzina; N. G. Anderson; W. D. Laidig

J. Vac. Sci. Technol. A 4, 2126–2131 (1986) https://doi.org/10.1116/1.574041

Abstract

View articletitled, Stimulated emission from Cd1−xMnxTe–CdTe heterostructures and Cd1−xMnxTe–Cd1−yMnyTe multiple quantum well structures

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Investigation of the two‐dimensional electron gas in HgCdTe by quantum Hall effect measurements

W. P. Kirk; P. S. Kobiela; R. A. Schiebel; M. A. Reed

J. Vac. Sci. Technol. A 4, 2132–2136 (1986) https://doi.org/10.1116/1.574042

Abstract

View articletitled, Investigation of the two‐dimensional electron gas in HgCdTe by quantum Hall effect measurements

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Crystal orientation of CdTe film on GaAs by metal–organic chemical vapor deposition

P.‐Y. Lu; L. M. Williams; S. N. G. Chu

J. Vac. Sci. Technol. A 4, 2137–2140 (1986) https://doi.org/10.1116/1.574043

Abstract

View articletitled, Crystal orientation of CdTe film on GaAs by metal–organic chemical vapor deposition

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Metal–organic chemical vapor deposition hybrid substrates for HgCdTe

J. L. Schmit

J. Vac. Sci. Technol. A 4, 2141–2149 (1986) https://doi.org/10.1116/1.574044

Abstract

View articletitled, Metal–organic chemical vapor deposition hybrid substrates for HgCdTe

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Epitaxial growth of CdTe on GaAs by molecular beam epitaxy

L. A. Kolodziejski; R. L. Gunshor; N. Otsuka; C. Choi

J. Vac. Sci. Technol. A 4, 2150–2152 (1986) https://doi.org/10.1116/1.574045

Abstract

View articletitled, Epitaxial growth of CdTe on GaAs by molecular beam epitaxy

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Epitaxial CdTe films on GaAs/Si and GaAs substrates

R. C. Bean; K. R. Zanio; K. A. Hay; J. M. Wright; E. J. Saller; R. Fischer; H. Morkoç

J. Vac. Sci. Technol. A 4, 2153–2157 (1986) https://doi.org/10.1116/1.574046

Abstract

View articletitled, Epitaxial CdTe films on GaAs/Si and GaAs substrates

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Evaluation of substrates for growth of HgCdTe by molecular beam epitaxy

J. H. Dinan; S. B. Qadri

J. Vac. Sci. Technol. A 4, 2158–2161 (1986) https://doi.org/10.1116/1.574047

Abstract

View articletitled, Evaluation of substrates for growth of HgCdTe by molecular beam epitaxy

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The growth of CdTe/GaAs heteroepitaxial films by metal–organic chemical vapor deposition

Philip L. Anderson

J. Vac. Sci. Technol. A 4, 2162–2168 (1986) https://doi.org/10.1116/1.574048

Abstract

View articletitled, The growth of CdTe/GaAs heteroepitaxial films by metal–organic chemical vapor deposition

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Boron and indium ion‐implanted junctions in HgCdTe grown on CdTe and CdTe/Al₂O₃

L. O. Bubulac; D. S. Lo; W. E. Tennant; D. D. Edwall; J. C. Robinson

J. Vac. Sci. Technol. A 4, 2169–2173 (1986) https://doi.org/10.1116/1.574049

Abstract

View articletitled, Boron and indium ion‐implanted junctions in HgCdTe grown on CdTe and CdTe/Al2O3

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Ion implantation damage in Hg_0.8Cd_0.2Te

H. F. Schaake

J. Vac. Sci. Technol. A 4, 2174–2176 (1986) https://doi.org/10.1116/1.574050

Abstract

View articletitled, Ion implantation damage in Hg0.8Cd0.2Te

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Effects of ion implantation on deep electron traps in Hg_0.7Cd_0.3Te

V. A. Cotton; J. A. Wilson

J. Vac. Sci. Technol. A 4, 2177–2180 (1986) https://doi.org/10.1116/1.574051

Abstract

View articletitled, Effects of ion implantation on deep electron traps in Hg0.7Cd0.3Te

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The kinetics of tellurium precipitation in Hg_0.8Cd_0.2Te

H. F. Schaake; J. H. Tregilgas

J. Vac. Sci. Technol. A 4, 2181–2183 (1986) https://doi.org/10.1116/1.574052

Abstract

View articletitled, The kinetics of tellurium precipitation in Hg0.8Cd0.2Te

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Tellurium precipitation in bulk‐grown Cd_xHg_1−xTe

D. J. Williams; A. W. Vere

J. Vac. Sci. Technol. A 4, 2184–2189 (1986) https://doi.org/10.1116/1.574053

Abstract

View articletitled, Tellurium precipitation in bulk‐grown CdxHg1−xTe

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A study of the defect structures in CdTe crystals using synchrotron x‐ray topography

Y.‐C. Lu; R. S. Feigelson; R. K. Route; Z. U. Rek

J. Vac. Sci. Technol. A 4, 2190–2194 (1986) https://doi.org/10.1116/1.574054

Abstract

View articletitled, A study of the defect structures in CdTe crystals using synchrotron x‐ray topography

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Effect of alloy disorder on deep levels in Hg₁₋_xCd_xTe

Charles W. Myles; William C. Ford

J. Vac. Sci. Technol. A 4, 2195–2199 (1986) https://doi.org/10.1116/1.574055

Abstract

View articletitled, Effect of alloy disorder on deep levels in Hg1−xCdxTe

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Misfit and threading dislocations in HgCdTe epitaxy

Andrei Szilagyi; Michael N. Grimbergen

J. Vac. Sci. Technol. A 4, 2200–2204 (1986) https://doi.org/10.1116/1.574056

Abstract

View articletitled, Misfit and threading dislocations in HgCdTe epitaxy

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Review of the status of quantum 1/ f noise in n⁺–p HgCdTe photodetectors and other devices

A. van der Ziel; P. H. Handel; X. L. Wu; J. B. Anderson

J. Vac. Sci. Technol. A 4, 2205–2216 (1986) https://doi.org/10.1116/1.574057

Abstract

View articletitled, Review of the status of quantum 1/ f noise in n+–p HgCdTe photodetectors and other devices

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Metal–organic chemical vapor deposition of mercury cadmium telluride epitaxial films

M. J. Hyliands; J. Thompson; M. J. Bevan; K. T. Woodhouse; V. Vincent

J. Vac. Sci. Technol. A 4, 2217–2225 (1986) https://doi.org/10.1116/1.574058

Abstract

View articletitled, Metal–organic chemical vapor deposition of mercury cadmium telluride epitaxial films

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Influence of layer thickness on the quality of mercury cadmium telluride epilayers grown by the interdiffused multilayer process

Paul M. Raccah; Z. Zhang; J. W. Garland; Amy H. M. Chu; M. J. Bevan; J. Thompson; K. T. Woodhouse

J. Vac. Sci. Technol. A 4, 2226–2229 (1986) https://doi.org/10.1116/1.574059

Abstract

View articletitled, Influence of layer thickness on the quality of mercury cadmium telluride epilayers grown by the interdiffused multilayer process

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The organometallic heteroepitaxy of CdTe and HgCdTe on GaAs substrates

Ishwara B. Bhat; Nikhil R. Taskar; Sorab K. Ghandhi

J. Vac. Sci. Technol. A 4, 2230–2233 (1986) https://doi.org/10.1116/1.574060

Abstract

View articletitled, The organometallic heteroepitaxy of CdTe and HgCdTe on GaAs substrates

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A comparison of CdTe grown on GaAs by molecular beam and organometallic vapor phase epitaxy

R. D. Feldman; D. W. Kisker; R. F. Austin; K. S. Jeffers; P. M. Bridenbaugh

J. Vac. Sci. Technol. A 4, 2234–2238 (1986) https://doi.org/10.1116/1.574061

Abstract

View articletitled, A comparison of CdTe grown on GaAs by molecular beam and organometallic vapor phase epitaxy

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