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Issues
Letters
Selective functionalization of partially etched SiNx to enhance SiO2 to SiNx etch selectivity
J. Vac. Sci. Technol. A 39, 050401 (2021)
https://doi.org/10.1116/6.0001110
Review Articles
Functional plasma-sprayed hydroxylapatite coatings for medical application: Clinical performance requirements and key property enhancement
In Special Collection:
Functional Coatings
J. Vac. Sci. Technol. A 39, 050801 (2021)
https://doi.org/10.1116/6.0001132
Perspectives
Green CVD—Toward a sustainable philosophy for thin film deposition by chemical vapor deposition
J. Vac. Sci. Technol. A 39, 051001 (2021)
https://doi.org/10.1116/6.0001125
ARTICLES
2-D Materials
Preparation and electronic structure of the WSe2/graphene/NiSex/Ni(111) heterostructure
In Special Collection:
Commemorating the Career of Charles S. Fadley
J. Vac. Sci. Technol. A 39, 052201 (2021)
https://doi.org/10.1116/6.0001134
Atomic Layer Deposition (ALD)
Wafer-level uniformity of atomic-layer-deposited niobium nitride thin films for quantum devices
In Special Collection:
Atomic Layer Deposition (ALD)
Emanuel Knehr; Mario Ziegler; Sven Linzen; Konstantin Ilin; Patrick Schanz; Jonathan Plentz; Marco Diegel; Heidemarie Schmidt; Evgeni Il’ichev; Michael Siegel
J. Vac. Sci. Technol. A 39, 052401 (2021)
https://doi.org/10.1116/6.0001126
Improved properties of atomic layer deposited ruthenium via postdeposition annealing
In Special Collection:
Atomic Layer Deposition (ALD)
Michael Hayes; Melanie A. Jenkins; Jacob Woodruff; Daniel F. Moser; Charles L. Dezelah; John F. Conley, Jr.
J. Vac. Sci. Technol. A 39, 052402 (2021)
https://doi.org/10.1116/6.0001078
Plasma-enhanced atomic layer deposition of SiO2 film using capacitively coupled Ar/O2 plasmas: A computational investigation
In Special Collection:
Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 39, 052403 (2021)
https://doi.org/10.1116/6.0001121
Direct-simulation Monte Carlo modeling of reactor-scale gas-dynamic phenomena in a multiwafer atomic-layer deposition batch reactor
In Special Collection:
Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 39, 052404 (2021)
https://doi.org/10.1116/6.0000993
Molecular layer deposition of Nylon 2,6 polyamide polymer on flat and particle substrates in an isothermal enclosure containing a rotary reactor
In Special Collection:
Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 39, 052405 (2021)
https://doi.org/10.1116/6.0001162
Atomic layer deposition onto fabrics of carbon and silicon carbide fibers: Preparation of multilayers comprising alumina, titania-furfuryl alcohol hybrid, and titanium phosphate
In Special Collection:
Atomic Layer Deposition (ALD)
Pauline Dill; Florian Pachel; Christian Militzer; Alexander Held; Georg Puchas; Stefan Knohl; Walter Krenkel; Christoph Tegenkamp; Werner Andreas Goedel
J. Vac. Sci. Technol. A 39, 052406 (2021)
https://doi.org/10.1116/6.0001193
Impact of trimethylaluminum exposure time on the mechanical properties of single-cycle atomic layer deposition modified cellulosic nanopaper
In Special Collection:
Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 39, 052407 (2021)
https://doi.org/10.1116/6.0001198
Effect of O2 plasma exposure time during atomic layer deposition of amorphous gallium oxide
In Special Collection:
Atomic Layer Deposition (ALD)
Hanno Kröncke; Florian Maudet; Sourish Banerjee; Jürgen Albert; Sven Wiesner; Veeresh Deshpande; Catherine Dubourdieu
J. Vac. Sci. Technol. A 39, 052408 (2021)
https://doi.org/10.1116/6.0001207
Atomic Layer Etching (ALE)
Atomic layer etching of Si3N4 with high selectivity to SiO2 and poly-Si
In Special Collection:
Atomic Layer Etching (ALE)
J. Vac. Sci. Technol. A 39, 052601 (2021)
https://doi.org/10.1116/6.0001179
Photovoltaics and Energy
Numerical ellipsometry: A method for selecting a near-minimal infrared measurement set for β-gallium oxide
In Special Collection:
Gallium Oxide Materials and Devices
J. Vac. Sci. Technol. A 39, 052801 (2021)
https://doi.org/10.1116/6.0001002
Plasma Science and Technology
Elucidating energetics and kinetics in environmentally relevant mixed gas plasmas
J. Vac. Sci. Technol. A 39, 053001 (2021)
https://doi.org/10.1116/6.0001080
Impact of carrier wafer on etch rate, selectivity, morphology, and passivation during GaN plasma etching
J. Vac. Sci. Technol. A 39, 053002 (2021)
https://doi.org/10.1116/6.0001123
Surfaces and Interfaces
Oxygen-induced surface reconstructions on curved Ag(111)
In Special Collection:
Commemorating the Career of Pat Thiel
Marie E. Turano; Ludo B. F. Juurlink; Maxwell Z. Gillum; Elizabeth A. Jamka; George Hildebrandt; Faith Lewis; Daniel R. Killelea
J. Vac. Sci. Technol. A 39, 053201 (2021)
https://doi.org/10.1116/6.0001167
Operando study of the preferential growth of SiO2 during the dry thermal oxidation of Si0.60Ge0.40(001) by ambient pressure x-ray photoelectron spectroscopy
In Special Collection:
Commemorating the Career of Charles S. Fadley
J. Vac. Sci. Technol. A 39, 053202 (2021)
https://doi.org/10.1116/6.0001174
Correlating surface stoichiometry and termination in SrTiO3 films grown by hybrid molecular beam epitaxy
Suresh Thapa; Sydney R. Provence; Devin Jessup; Jason Lapano; Matthew Brahlek; Jerzy T. Sadowski; Petra Reinke; Wencan Jin; Ryan B. Comes
J. Vac. Sci. Technol. A 39, 053203 (2021)
https://doi.org/10.1116/6.0001159
Depth profile reconstruction of YCrO3/CaMnO3 superlattices by near total reflection hard x-ray photoelectron spectroscopy
In Special Collection:
Commemorating the Career of Charles S. Fadley
J. Vac. Sci. Technol. A 39, 053204 (2021)
https://doi.org/10.1116/6.0001113
Cinnamaldehyde adsorption and thermal decomposition on copper surfaces
In Special Collection:
Commemorating the Career of Pat Thiel
J. Vac. Sci. Technol. A 39, 053205 (2021)
https://doi.org/10.1116/6.0001192
Nonadiabatic localization of H2 in the field of two external positive tip charges
In Special Collection:
Commemorating the Career of Charles S. Fadley
J. Vac. Sci. Technol. A 39, 053206 (2021)
https://doi.org/10.1116/6.0001138
Observations of the Ag(3 × 1) phase on Ge(111)
In Special Collection:
Commemorating the Career of Charles S. Fadley
J. Vac. Sci. Technol. A 39, 053207 (2021)
https://doi.org/10.1116/6.0001183
X-ray spectroscopic identification of strain and structure-based resonances in a series of saturated carbon-cage molecules: Adamantane, twistane, octahedrane, and cubane
In Special Collection:
Commemorating the Career of Charles S. Fadley
Trevor M. Willey; Jonathan R. I. Lee; Daniel Brehmer; Oscar A. Paredes Mellone; Lasse Landt; Peter R. Schreiner; Andrey A. Fokin; Boryslav A. Tkachenko; Armin de Meijere; Sergei Kozhushkov; Anthony W. van Buuren
J. Vac. Sci. Technol. A 39, 053208 (2021)
https://doi.org/10.1116/6.0001150
Hierarchical colloid-based lithography for wettability tuning of semiconductor surfaces
J. Vac. Sci. Technol. A 39, 053209 (2021)
https://doi.org/10.1116/6.0001122
Correlating chemical and electronic states from quantitative photoemission electron microscopy of transition-metal dichalcogenide heterostructures
In Special Collection:
Commemorating the Career of Charles S. Fadley
Olivier Renault; Hokwon Kim; Dumitru Dumcenco; Dmitrii Unuchek; Nicolas Chevalier; Maxime Gay; Andras Kis; Neal Fairley
J. Vac. Sci. Technol. A 39, 053210 (2021)
https://doi.org/10.1116/6.0001135
Surface study of Pt-3d transition metal alloys, Pt3M (M = Ti, V), under CO oxidation reaction with ambient pressure x-ray photoelectron spectroscopy
In Special Collection:
Commemorating the Career of Charles S. Fadley
Moonjung Jung; Dongwoo Kim; Hojoon Lim; Minsik Seo; Geonhwa Kim; Lucía Pérez Ramírez; Fabrice Bournel; Jean-Jacques Gallet; Ki-Jeong Kim; Bongjin Simon Mun
J. Vac. Sci. Technol. A 39, 053211 (2021)
https://doi.org/10.1116/6.0001194
Homoepitaxial GaN micropillar array by plasma-free photo-enhanced metal-assisted chemical etching
J. Vac. Sci. Technol. A 39, 053212 (2021)
https://doi.org/10.1116/6.0001231
Thin Films
Role of hydrogen species in promoting photoluminescence from Eu3+-doped ZnO thin films via bandgap excitation
J. Vac. Sci. Technol. A 39, 053401 (2021)
https://doi.org/10.1116/6.0001141
Localized phase transition of TiO2 thin films induced by sub-bandgap laser irradiation
J. Vac. Sci. Technol. A 39, 053402 (2021)
https://doi.org/10.1116/6.0001088
Synthesis of model sodium sulfide films
Rebecca D. McAuliffe; Victoria Petrova; Matthew J. McDermott; Jameson Landon Tyler; Ethan C. Self; Kristin A. Persson; Ping Liu; Gabriel M. Veith
J. Vac. Sci. Technol. A 39, 053404 (2021)
https://doi.org/10.1116/6.0001069
Temperature dependent performance of ITO Schottky contacts on β-Ga2O3
In Special Collection:
Gallium Oxide Materials and Devices
J. Vac. Sci. Technol. A 39, 053405 (2021)
https://doi.org/10.1116/6.0001211
Epitaxial film growth by thermal laser evaporation
J. Vac. Sci. Technol. A 39, 053406 (2021)
https://doi.org/10.1116/6.0001177
Growth of topological insulator Bi2Se3 particles on GaAs via droplet epitaxy
J. Vac. Sci. Technol. A 39, 053407 (2021)
https://doi.org/10.1116/6.0001157
Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure
In Special Collection:
Atomic Layer Deposition (ALD)
Md. Istiaque Chowdhury; Mark Sowa; Kylie E. Van Meter; Tomas F. Babuska; Tomas Grejtak; Alexander C. Kozen; Brandon A. Krick; Nicholas C. Strandwitz
J. Vac. Sci. Technol. A 39, 053408 (2021)
https://doi.org/10.1116/6.0001175
Properties of secondary ions in ion beam sputtering of Ga2O3
In Special Collection:
Gallium Oxide Materials and Devices
J. Vac. Sci. Technol. A 39, 053409 (2021)
https://doi.org/10.1116/6.0001204
Chirality-induced zigzag domain wall in in-plane magnetized ultrathin films
In Special Collection:
Commemorating the Career of Charles S. Fadley
J. Vac. Sci. Technol. A 39, 053410 (2021)
https://doi.org/10.1116/6.0001170
In-line electronic and structural characterization of reactively sputtered Cu-Co-Mn black spinel oxides
J. Vac. Sci. Technol. A 39, 053411 (2021)
https://doi.org/10.1116/6.0001120
Capacitive β-Ga2O3 solar-blind photodetector with graphene electrode
In Special Collection:
Gallium Oxide Materials and Devices
J. Vac. Sci. Technol. A 39, 053412 (2021)
https://doi.org/10.1116/6.0001217
Errata
Erratum: “Formation and desorption of nickel hexafluoroacetylacetonate Ni(hfac)2 on a nickel oxide surface in atomic layer etching processes” [J. Vac. Sci. Technol. A 38, 052602 (2020)]
Abdulrahman H. Basher; Marjan Krstić; Karin Fink; Tomoko Ito; Kazuhiro Karahashi; Wolfgang Wenzel; Satoshi Hamaguchi
J. Vac. Sci. Technol. A 39, 057001 (2021)
https://doi.org/10.1116/6.0001319
Low-resistivity molybdenum obtained by atomic layer deposition
Kees van der Zouw, Bernhard Y. van der Wel, et al.
Many routes to ferroelectric HfO2: A review of current deposition methods
Hanan Alexandra Hsain, Younghwan Lee, et al.
Observation of an abrupt 3D-2D morphological transition in thin Al layers grown by MBE on InGaAs surface
A. Elbaroudy, B. Khromets, et al.