Issues

Letters

Gas-phase surface functionalization of SiN_x with benzaldehyde to increase SiO₂ to SiN_x etch selectivity in atomic layer etching

In Special Collection: Atomic Layer Etching (ALE)

Ryan J. Gasvoda; Zhonghao Zhang; Eric A. Hudson; Sumit Agarwal

J. Vac. Sci. Technol. A 39, 040401 (2021) https://doi.org/10.1116/6.0001046

Abstract

View articletitled, Gas-phase surface functionalization of SiN<em>_x</em> with benzaldehyde to increase SiO₂ to SiN<em>_x</em> etch selectivity in atomic layer etching

Supplementary Material

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Performance and reliability of β-Ga₂O₃ Schottky barrier diodes at high temperature

In Special Collection: Gallium Oxide Materials and Devices

Karen Heinselman; Patrick Walker; Andrew Norman; Philip Parilla; David Ginley; Andriy Zakutayev

J. Vac. Sci. Technol. A 39, 040402 (2021) https://doi.org/10.1116/6.0001003

Abstract

View articletitled, Performance and reliability of β-Ga₂O₃ Schottky barrier diodes at high temperature

Supplementary Material

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Titanium infiltration into ultrathin PMMA brushes

Pierre Giovanni Mani-Gonzalez; Caitlin McFeely; Matthew Snelgrove; Kyle Shiel; Jesus Alfredo Hernandez Marquez; Robert O’Connor

J. Vac. Sci. Technol. A 39, 040403 (2021) https://doi.org/10.1116/6.0001061

Abstract

View articletitled, Titanium infiltration into ultrathin PMMA brushes

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Hybrid molecular beam epitaxy growth of BaTiO₃ films

In Special Collection: Honoring Dr. Scott Chambers&#x2019; 70th Birthday and His Leadership in the Science and Technology of Oxide Thin Films

William Nunn; Sara Sandlass; Maike Wegner; Ryan Haislmaier; Abinash Kumar; Malleswararao Tangi; James LeBeau; Eckhard Quandt; Richard D. James; Bharat Jalan

J. Vac. Sci. Technol. A 39, 040404 (2021) https://doi.org/10.1116/6.0001140

Abstract

View articletitled, Hybrid molecular beam epitaxy growth of BaTiO₃ films

Supplementary Material

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CHORUS

Van der Waals epitaxy and remote epitaxy of LiNbO₃ thin films by pulsed laser deposition

Ru Jia; Hyun S. Kum; Xin Sun; Yuwei Guo; Baiwei Wang; Peijiao Fang; Jie Jiang; Daniel Gall; Toh-Ming Lu; Morris Washington; Jeehwan Kim; Jian Shi

J. Vac. Sci. Technol. A 39, 040405 (2021) https://doi.org/10.1116/6.0001109

Abstract

View articletitled, Van der Waals epitaxy and remote epitaxy of LiNbO₃ thin films by pulsed laser deposition

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Review Articles

Photoelectron diffraction: Early demonstrations and alternative modes

In Special Collection: Commemorating the Career of Charles S. Fadley

David Phil Woodruff

J. Vac. Sci. Technol. A 39, 040801 (2021) https://doi.org/10.1116/6.0001104

Abstract

View articletitled, Photoelectron diffraction: Early demonstrations and alternative modes

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X-ray and electron spectroscopy of (photo)electrocatalysts: Understanding activity through electronic structure and adsorbate coverage

Oliver Quinn Carvalho; Ethan J. Crumlin; Kelsey A. Stoerzinger

J. Vac. Sci. Technol. A 39, 040802 (2021) https://doi.org/10.1116/6.0001091

Abstract

View articletitled, X-ray and electron spectroscopy of (photo)electrocatalysts: Understanding activity through electronic structure and adsorbate coverage

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CHORUS

Honoring Dr. Art Gossard’s 85th Birthday and His Leadership in the Science and Technology of Molecular Beam Epitaxy

Preface

Preface for the special topic collection Honoring Dr. Art Gossard’s 85th Birthday and his Leadership in the Science and Technology of Molecular Beam Epitaxy

Joshua M. O. Zide

J. Vac. Sci. Technol. A 39, 041601 (2021) https://doi.org/10.1116/6.0001168

Extract

View articletitled, Preface for the special topic collection Honoring Dr. Art Gossard’s 85th Birthday and his Leadership in the Science and Technology of Molecular Beam Epitaxy

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ARTICLES

2-D Materials

Adsorption and reaction kinetics of SO₂ on graphene: An ultrahigh vacuum surface science study

Thomas Stach; Melody C. Johnson; Samuel Stevens; Uwe Burghaus

J. Vac. Sci. Technol. A 39, 042201 (2021) https://doi.org/10.1116/6.0001055

Abstract

View articletitled, Adsorption and reaction kinetics of SO₂ on graphene: An ultrahigh vacuum surface science study

Supplementary Material

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Role of sublimation kinetics of ammonia borane in chemical vapor deposition of uniform, large-area hexagonal boron nitride

Balaji Sompalle; Chun-Da Liao; Bin Wei; Maria de Fátima Cerqueira; Nicoleta Nicoara; Zhongchang Wang; Sascha Sadewasser; Pedro Alpuim

J. Vac. Sci. Technol. A 39, 042202 (2021) https://doi.org/10.1116/6.0000987

Abstract

View articletitled, Role of sublimation kinetics of ammonia borane in chemical vapor deposition of uniform, large-area hexagonal boron nitride

Supplementary Material

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Atomic Layer Deposition (ALD)

Engineering high quality and conformal ultrathin SiN_x films by PEALD for downscaled and advanced CMOS nodes

In Special Collection: Atomic Layer Deposition (ALD)

Antony Premkumar Peter; Takayama Tomomi; Ebisudani Taishi; Shiba Eiichiro; Alfonso Sepulveda; Timothee Blanquart; Yosuke Kimura; Sujith Subramanian; Sylvain Baudot; Briggs Basoene; Anshul Gupta; Anabela Veloso; Elena Capogreco; Hans Mertens; Johan Meersschaut; Thierry Conard; Praveen Dara; Jef Geypen; Gerardo Martinez; Dmitry Batuk; Steven Demuynck; Pierre Morin

J. Vac. Sci. Technol. A 39, 042401 (2021) https://doi.org/10.1116/6.0000821

Abstract

View articletitled, Engineering high quality and conformal ultrathin SiN_x films by PEALD for downscaled and advanced CMOS nodes

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Multilayer ultraviolet reflective coating based on atomic layer deposited aluminum oxide and fluoride

In Special Collection: Atomic Layer Deposition (ALD)

Zhiyu Huang; Daniel C. Messina; Brianna S. Eller; Franz A. Koeck; Paul A. Scowen; Robert J. Nemanich

J. Vac. Sci. Technol. A 39, 042402 (2021) https://doi.org/10.1116/6.0001010

Abstract

View articletitled, Multilayer ultraviolet reflective coating based on atomic layer deposited aluminum oxide and fluoride

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CHORUS

Hollow cathode plasma electron source for low temperature deposition of cobalt films by electron-enhanced atomic layer deposition

In Special Collection: Atomic Layer Deposition (ALD)

Zachary C. Sobell; Andrew S. Cavanagh; David R. Boris; Scott G. Walton; Steven M. George

J. Vac. Sci. Technol. A 39, 042403 (2021) https://doi.org/10.1116/6.0001033

Abstract

View articletitled, Hollow cathode plasma electron source for low temperature deposition of cobalt films by electron-enhanced atomic layer deposition

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Characteristics of carbon-containing low-k dielectric SiCN thin films deposited via remote plasma atomic layer deposition

In Special Collection: Atomic Layer Deposition (ALD)

Chanwon Jung; Seokhwi Song; Hyunwoo Park; Youngjoon Kim; Eun Jong Lee; Sung Gwon Lee; Hyeongtag Jeon

J. Vac. Sci. Technol. A 39, 042404 (2021) https://doi.org/10.1116/6.0000887

Abstract

View articletitled, Characteristics of carbon-containing low-k dielectric SiCN thin films deposited via remote plasma atomic layer deposition

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Atomic Layer Etching (ALE)

Selective atomic layer reaction between GaN and SiN in HBr neutral beam etching

Daisuke Ohori; Takahiro Sawada; Kenta Sugawara; Masaya Okada; Ken Nakata; Kazutaka Inoue; Daisuke Sato; Seiji Samukawa

J. Vac. Sci. Technol. A 39, 042601 (2021) https://doi.org/10.1116/6.0000867

Abstract

View articletitled, Selective atomic layer reaction between GaN and SiN in HBr neutral beam etching

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Thermal atomic layer etching of amorphous and crystalline Al₂O₃ films

In Special Collection: Atomic Layer Etching (ALE)

Jessica A. Murdzek; Adarsh Rajashekhar; Raghuveer S. Makala; Steven M. George

J. Vac. Sci. Technol. A 39, 042602 (2021) https://doi.org/10.1116/6.0000995

Abstract

View articletitled, Thermal atomic layer etching of amorphous and crystalline Al₂O₃ films

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CHORUS

Surface damage formation during atomic layer etching of silicon with chlorine adsorption

In Special Collection: Atomic Layer Etching (ALE)

Erin Joy Capdos Tinacba; Michiro Isobe; Satoshi Hamaguchi

J. Vac. Sci. Technol. A 39, 042603 (2021) https://doi.org/10.1116/6.0001117

Abstract

View articletitled, Surface damage formation during atomic layer etching of silicon with chlorine adsorption

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Plasma Science and Technology

Effect of nonvertical ion bombardment due to edge effects on polymer surface morphology evolution and etching uniformity

Adam Pranda; Chen Li; Youngsik Seo; Gottlieb S. Oehrlein

J. Vac. Sci. Technol. A 39, 043001 (2021) https://doi.org/10.1116/6.0001015

Abstract

View articletitled, Effect of nonvertical ion bombardment due to edge effects on polymer surface morphology evolution and etching uniformity

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Model analysis of the feature profile evolution during Si etching in HBr-containing plasmas

Masahito Mori; Shoki Irie; Yugo Osano; Koji Eriguchi; Kouichi Ono

J. Vac. Sci. Technol. A 39, 043002 (2021) https://doi.org/10.1116/6.0000970

Abstract

View articletitled, Model analysis of the feature profile evolution during Si etching in HBr-containing plasmas

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Postgrowth modification of monolayer graphene films by low-pressure diborane-argon plasma

Pierre Vinchon; Xavier Glad; Germain Robert Bigras; Andranik Sarkissian; Richard Martel; Luc Stafford

J. Vac. Sci. Technol. A 39, 043003 (2021) https://doi.org/10.1116/6.0000924

Abstract

View articletitled, Postgrowth modification of monolayer graphene films by low-pressure diborane-argon plasma

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A high-power impulse magnetron sputtering global model for argon plasma–chromium target interactions

Joelle Zgheib; Pierre Yves Jouan; Ahmed Rhallabi

J. Vac. Sci. Technol. A 39, 043004 (2021) https://doi.org/10.1116/6.0000865

Abstract

View articletitled, A high-power impulse magnetron sputtering global model for argon plasma–chromium target interactions

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Evaluation of nickel self-sputtering yields by molecular-dynamics simulation

Nicolas A. Mauchamp; Michiro Isobe; Satoshi Hamaguchi

J. Vac. Sci. Technol. A 39, 043005 (2021) https://doi.org/10.1116/6.0000979

Abstract

View articletitled, Evaluation of nickel self-sputtering yields by molecular-dynamics simulation

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Focus ring geometry influence on wafer edge voltage distribution for plasma processes

Yuhua Xiao; Yao Du; Carl Smith; Sang Ki Nam; Hoki Lee; Jang-Yeob Lee; Steven Shannon

J. Vac. Sci. Technol. A 39, 043006 (2021) https://doi.org/10.1116/6.0000981

Abstract

View articletitled, Focus ring geometry influence on wafer edge voltage distribution for plasma processes

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Direct current and high power impulse magnetron sputtering discharges with a positively biased anode

Rainer Hippler; Martin Cada; Zdenek Hubicka

J. Vac. Sci. Technol. A 39, 043007 (2021) https://doi.org/10.1116/6.0001054

Abstract

View articletitled, Direct current and high power impulse magnetron sputtering discharges with a positively biased anode

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Mechanism of highly selective etching of SiCN by using NF₃/Ar-based plasma

Miyako Matsui; Tatehito Usui; Kenichi Kuwahara

J. Vac. Sci. Technol. A 39, 043008 (2021) https://doi.org/10.1116/6.0000711

Abstract

View articletitled, Mechanism of highly selective etching of SiCN by using NF₃/Ar-based plasma

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Surfaces and Interfaces

Impact of chemical bonding difference of ALD Mo on SiO₂ and Al₂O₃ on the effective work function of the two gate stacks

In Special Collection: Atomic Layer Deposition (ALD)

Ekaterina Zoubenko; Sara Iacopetti; Kamira Weinfeld; Yaron Kauffmann; Patrick Van Cleemput; Moshe Eizenberg

J. Vac. Sci. Technol. A 39, 043201 (2021) https://doi.org/10.1116/6.0000964

Abstract

View articletitled, Impact of chemical bonding difference of ALD Mo on SiO₂ and Al₂O₃ on the effective work function of the two gate stacks

Supplementary Material

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Molecule deposition in mask-shielded regions revealed by selective Mg vapor deposition

Tsuyoshi Tsujioka; Hatsuka Kusaka; Arimi Shimotsu

J. Vac. Sci. Technol. A 39, 043202 (2021) https://doi.org/10.1116/6.0000994

Abstract

View articletitled, Molecule deposition in mask-shielded regions revealed by selective Mg vapor deposition

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Factors influencing surface carbon contamination in ambient-pressure x-ray photoelectron spectroscopy experiments

In Special Collection: Commemorating the Career of Charles S. Fadley

Nicolo’ Comini; Thomas Huthwelker; J. Trey Diulus; Jürg Osterwalder; Zbynek Novotny

J. Vac. Sci. Technol. A 39, 043203 (2021) https://doi.org/10.1116/6.0001013

Abstract

View articletitled, Factors influencing surface carbon contamination in ambient-pressure x-ray photoelectron spectroscopy experiments

Supplementary Material

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Highly selective and vertical etch of silicon dioxide using ruthenium films as an etch mask

William J. Mitchell; Brian J. Thibeault; Demis D. John; Thomas E. Reynolds

J. Vac. Sci. Technol. A 39, 043204 (2021) https://doi.org/10.1116/6.0001030

Abstract

View articletitled, Highly selective and vertical etch of silicon dioxide using ruthenium films as an etch mask

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Underlying simplicity of 5f unoccupied electronic structure

J. G. Tobin; S. Nowak; S.-W. Yu; P. Roussel; R. Alonso-Mori; T. Kroll; D. Nordlund; T.-C. Weng; D. Sokaras

J. Vac. Sci. Technol. A 39, 043205 (2021) https://doi.org/10.1116/6.0001007

Abstract

View articletitled, Underlying simplicity of 5f unoccupied electronic structure

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CHORUS

Surface plasmon resonance is possible in an optical fiber tapered to a point

Doryne Sunda-Meya; Hans D. Hallen

J. Vac. Sci. Technol. A 39, 043206 (2021) https://doi.org/10.1116/6.0000965

Abstract

View articletitled, Surface plasmon resonance is possible in an optical fiber tapered to a point

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CHORUS

Two-step model for reduction reaction of ultrathin nickel oxide by hydrogen

In Special Collection: Commemorating the Career of Charles S. Fadley

Shuichi Ogawa; Ryo Taga; Akitaka Yoshigoe; Yuji Takakuwa

J. Vac. Sci. Technol. A 39, 043207 (2021) https://doi.org/10.1116/6.0001056

Abstract

View articletitled, Two-step model for reduction reaction of ultrathin nickel oxide by hydrogen

Supplementary Material

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Determining valence band offsets in heterojunctions using a single core-level x-ray photoelectron spectrum

In Special Collection: Commemorating the Career of Charles S. Fadley

Le Wang; Yingge Du; Scott A. Chambers

J. Vac. Sci. Technol. A 39, 043208 (2021) https://doi.org/10.1116/6.0001103

Abstract

View articletitled, Determining valence band offsets in heterojunctions using a single core-level x-ray photoelectron spectrum

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Thin Films

Approaching ultrathin VO₂ films on sapphire (001) substrates by biased reactive sputtering: Characteristic morphology and its effect on the infrared-light switching

Kunio Okimura; Joe Sakai; Masashi Kuwahara; Mustapha Zaghrioui; Yoichi Uehara

J. Vac. Sci. Technol. A 39, 043401 (2021) https://doi.org/10.1116/6.0001023

Abstract

View articletitled, Approaching ultrathin VO₂ films on sapphire (001) substrates by biased reactive sputtering: Characteristic morphology and its effect on the infrared-light switching

Supplementary Material

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Effects of thickness and interlayer on optical properties of AlN films at room and high temperature

Yao Liu; Zhaolun Yang; Xianjian Long; Xiong Zhang; Minxin Yan; Dan Huang; Ian T. Ferguson; Zhe Chuan Feng

J. Vac. Sci. Technol. A 39, 043402 (2021) https://doi.org/10.1116/6.0000966

Abstract

View articletitled, Effects of thickness and interlayer on optical properties of AlN films at room and high temperature

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Effect of oxygen pressure on stoichiometric transfer in laser ablation of Pr³⁺ doped Gd₂O₃–Ga₂O₃ binary system

In Special Collection: Gallium Oxide Materials and Devices

Jan Lancok; Michal Novotny; Lenka Volfova; Joris More-Chevalier; Antonio Pereira

J. Vac. Sci. Technol. A 39, 043403 (2021) https://doi.org/10.1116/6.0001001

Abstract

View articletitled, Effect of oxygen pressure on stoichiometric transfer in laser ablation of Pr³⁺ doped Gd₂O₃–Ga₂O₃ binary system

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Design of line seeds for glancing angle deposition

Chuang Qu; Bruce Alphenaar; Shamus McNamara; Kevin Walsh

J. Vac. Sci. Technol. A 39, 043404 (2021) https://doi.org/10.1116/6.0000998

Abstract

View articletitled, Design of line seeds for glancing angle deposition

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CHORUS

{100}-textured piezoelectric Pb(Zr,Ti)O₃ films: Influence of Pb content in the Pb_xTiO₃ seed layer on the electrical properties of chemical solution deposited Pb(Zr,Ti)O₃

Sushma Kotru; Vaishali Batra; Jian Zhong

J. Vac. Sci. Technol. A 39, 043405 (2021) https://doi.org/10.1116/6.0000955

Abstract

View articletitled, {100}-textured piezoelectric Pb(Zr,Ti)O₃ films: Influence of Pb content in the Pb_xTiO₃ seed layer on the electrical properties of chemical solution deposited Pb(Zr,Ti)O₃

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MoO₃ films grown on stepped sapphire (0001) by molecular beam epitaxy

Petr Novotný; H. Henry Lamb

J. Vac. Sci. Technol. A 39, 043406 (2021) https://doi.org/10.1116/6.0000962

Abstract

View articletitled, MoO₃ films grown on stepped sapphire (0001) by molecular beam epitaxy

Supplementary Material

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CHORUS

Precise control of time-varying effusion cell flux in molecular beam epitaxy

Chris Deimert; Zbig R. Wasilewski

J. Vac. Sci. Technol. A 39, 043407 (2021) https://doi.org/10.1116/6.0001019

Abstract

View articletitled, Precise control of time-varying effusion cell flux in molecular beam epitaxy

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Thickness-dependent optical properties of aluminum nitride films for mid-infrared wavelengths

Leonid Yu. Beliaev; Evgeniy Shkondin; Andrei V. Lavrinenko; Osamu Takayama

J. Vac. Sci. Technol. A 39, 043408 (2021) https://doi.org/10.1116/6.0000884

Abstract

View articletitled, Thickness-dependent optical properties of aluminum nitride films for mid-infrared wavelengths

Supplementary Material

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Superconformal chemical vapor deposition using plasma-generated atomic species as a consumable growth inhibitor

Yu Yang; Kinsey L. Canova; Sreenivas Jayaraman; Do-Young Kim; Gregory S. Girolami; John R. Abelson

J. Vac. Sci. Technol. A 39, 043409 (2021) https://doi.org/10.1116/6.0001018

Abstract

View articletitled, Superconformal chemical vapor deposition using plasma-generated atomic species as a consumable growth inhibitor

Supplementary Material

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CHORUS

Investigations on Ba diffusion and SiO evaporation during BaSi₂ film formation on Si substrates by thermal evaporation

Daisuke Yazawa; Kosuke O. Hara; Junji Yamanaka; Keisuke Arimoto

J. Vac. Sci. Technol. A 39, 043410 (2021) https://doi.org/10.1116/6.0001081

Abstract

View articletitled, Investigations on Ba diffusion and SiO evaporation during BaSi₂ film formation on Si substrates by thermal evaporation

Supplementary Material

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Area selective deposition of iron films using temperature sensitive masking materials and plasma electrons as reducing agents

In Special Collection: Special Topic Collection on Area Selective Deposition

Hama Nadhom; Yusheng Yuan; Polla Rouf; Niclas Solin; Henrik Pedersen

J. Vac. Sci. Technol. A 39, 043411 (2021) https://doi.org/10.1116/6.0001076

Abstract

View articletitled, Area selective deposition of iron films using temperature sensitive masking materials and plasma electrons as reducing agents

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Retarded solid state dewetting of thin bismuth films with oxide capping layer

Constantin Wansorra; Wolfgang Donner

J. Vac. Sci. Technol. A 39, 043412 (2021) https://doi.org/10.1116/6.0001048

Abstract

View articletitled, Retarded solid state dewetting of thin bismuth films with oxide capping layer

Supplementary Material

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Silicon-ion implantation induced doping and nanoporosity in molecular beam epitaxy grown GaSb epitaxial films

Rakesh Kumar Pandey; Puspashree Mishra; Akhilesh Pandey; Shankar Dutta; Aman Arora; Shyama Rath

J. Vac. Sci. Technol. A 39, 043413 (2021) https://doi.org/10.1116/6.0000895

Abstract

View articletitled, Silicon-ion implantation induced doping and nanoporosity in molecular beam epitaxy grown GaSb epitaxial films

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Solid-phase epitaxial crystallization of β-Ga₂O₃ thin film by KrF excimer laser irradiation from backside of NiO (111)-buffered α-Al₂O₃ (0001) substrate at room temperature

In Special Collection: Gallium Oxide Materials and Devices

Hiroyuki Morita; Takumi Matsushima; Kisho Nakamura; Kenta Kaneko; Satoru Kaneko; Akifumi Matsuda; Mamoru Yoshimoto

J. Vac. Sci. Technol. A 39, 043414 (2021) https://doi.org/10.1116/6.0000996

Abstract

View articletitled, Solid-phase epitaxial crystallization of β-Ga₂O₃ thin film by KrF excimer laser irradiation from backside of NiO (111)-buffered α-Al₂O₃ (0001) substrate at room temperature

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Vapor deposition of CsPbBr₃ thin films by evaporation of CsBr and PbBr₂

In Special Collection: Organic, Inorganic, and Hybrid Halide Perovskite Thin Films

Iver J. Cleveland; Minh N. Tran; Anamika Dey; Eray S. Aydil

J. Vac. Sci. Technol. A 39, 043415 (2021) https://doi.org/10.1116/6.0000875

Abstract

View articletitled, Vapor deposition of CsPbBr₃ thin films by evaporation of CsBr and PbBr₂

Supplementary Material

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Zirconia-titania-doped tantala optical coatings for low mechanical loss Bragg mirrors

In Special Collection: Functional Coatings

Émile Lalande; Alexandre W. Lussier; Carl Lévesque; Marianne Ward; Bill Baloukas; Ludvik Martinu; Gabriele Vajente; Garilynn Billingsley; Alena Ananyeva; Riccardo Bassiri; Martin M. Fejer; François Schiettekatte

J. Vac. Sci. Technol. A 39, 043416 (2021) https://doi.org/10.1116/6.0001074

Abstract

View articletitled, Zirconia-titania-doped tantala optical coatings for low mechanical loss Bragg mirrors

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CHORUS

Errata