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Gas-phase surface functionalization of SiNx with benzaldehyde to increase SiO2 to SiNx etch selectivity in atomic layer etching
Performance and reliability of β-Ga2O3 Schottky barrier diodes at high temperature
Hybrid molecular beam epitaxy growth of BaTiO3 films
Van der Waals epitaxy and remote epitaxy of LiNbO3 thin films by pulsed laser deposition
Multilayer ultraviolet reflective coating based on atomic layer deposited aluminum oxide and fluoride
Factors influencing surface carbon contamination in ambient-pressure x-ray photoelectron spectroscopy experiments
Determining valence band offsets in heterojunctions using a single core-level x-ray photoelectron spectrum
MoO3 films grown on stepped sapphire (0001) by molecular beam epitaxy
Issues
Letters
Gas-phase surface functionalization of SiNx with benzaldehyde to increase SiO2 to SiNx etch selectivity in atomic layer etching
In Special Collection:
Atomic Layer Etching (ALE)
J. Vac. Sci. Technol. A 39, 040401 (2021)
https://doi.org/10.1116/6.0001046
Performance and reliability of β-Ga2O3 Schottky barrier diodes at high temperature
In Special Collection:
Gallium Oxide Materials and Devices
J. Vac. Sci. Technol. A 39, 040402 (2021)
https://doi.org/10.1116/6.0001003
Titanium infiltration into ultrathin PMMA brushes
Pierre Giovanni Mani-Gonzalez; Caitlin McFeely; Matthew Snelgrove; Kyle Shiel; Jesus Alfredo Hernandez Marquez; Robert O’Connor
J. Vac. Sci. Technol. A 39, 040403 (2021)
https://doi.org/10.1116/6.0001061
Hybrid molecular beam epitaxy growth of BaTiO3 films
William Nunn; Sara Sandlass; Maike Wegner; Ryan Haislmaier; Abinash Kumar; Malleswararao Tangi; James LeBeau; Eckhard Quandt; Richard D. James; Bharat Jalan
J. Vac. Sci. Technol. A 39, 040404 (2021)
https://doi.org/10.1116/6.0001140
Van der Waals epitaxy and remote epitaxy of LiNbO3 thin films by pulsed laser deposition
Ru Jia; Hyun S. Kum; Xin Sun; Yuwei Guo; Baiwei Wang; Peijiao Fang; Jie Jiang; Daniel Gall; Toh-Ming Lu; Morris Washington; Jeehwan Kim; Jian Shi
J. Vac. Sci. Technol. A 39, 040405 (2021)
https://doi.org/10.1116/6.0001109
Review Articles
Photoelectron diffraction: Early demonstrations and alternative modes
In Special Collection:
Commemorating the Career of Charles S. Fadley
J. Vac. Sci. Technol. A 39, 040801 (2021)
https://doi.org/10.1116/6.0001104
X-ray and electron spectroscopy of (photo)electrocatalysts: Understanding activity through electronic structure and adsorbate coverage
J. Vac. Sci. Technol. A 39, 040802 (2021)
https://doi.org/10.1116/6.0001091
Honoring Dr. Art Gossard’s 85th Birthday and His Leadership in the Science and Technology of Molecular Beam Epitaxy
Preface
ARTICLES
2-D Materials
Adsorption and reaction kinetics of SO2 on graphene: An ultrahigh vacuum surface science study
J. Vac. Sci. Technol. A 39, 042201 (2021)
https://doi.org/10.1116/6.0001055
Role of sublimation kinetics of ammonia borane in chemical vapor deposition of uniform, large-area hexagonal boron nitride
Balaji Sompalle; Chun-Da Liao; Bin Wei; Maria de Fátima Cerqueira; Nicoleta Nicoara; Zhongchang Wang; Sascha Sadewasser; Pedro Alpuim
J. Vac. Sci. Technol. A 39, 042202 (2021)
https://doi.org/10.1116/6.0000987
Atomic Layer Deposition (ALD)
Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
In Special Collection:
Atomic Layer Deposition (ALD)
Antony Premkumar Peter; Takayama Tomomi; Ebisudani Taishi; Shiba Eiichiro; Alfonso Sepulveda; Timothee Blanquart; Yosuke Kimura; Sujith Subramanian; Sylvain Baudot; Briggs Basoene; Anshul Gupta; Anabela Veloso; Elena Capogreco; Hans Mertens; Johan Meersschaut; Thierry Conard; Praveen Dara; Jef Geypen; Gerardo Martinez; Dmitry Batuk; Steven Demuynck; Pierre Morin
J. Vac. Sci. Technol. A 39, 042401 (2021)
https://doi.org/10.1116/6.0000821
Multilayer ultraviolet reflective coating based on atomic layer deposited aluminum oxide and fluoride
In Special Collection:
Atomic Layer Deposition (ALD)
Zhiyu Huang; Daniel C. Messina; Brianna S. Eller; Franz A. Koeck; Paul A. Scowen; Robert J. Nemanich
J. Vac. Sci. Technol. A 39, 042402 (2021)
https://doi.org/10.1116/6.0001010
Hollow cathode plasma electron source for low temperature deposition of cobalt films by electron-enhanced atomic layer deposition
In Special Collection:
Atomic Layer Deposition (ALD)
J. Vac. Sci. Technol. A 39, 042403 (2021)
https://doi.org/10.1116/6.0001033
Characteristics of carbon-containing low-k dielectric SiCN thin films deposited via remote plasma atomic layer deposition
In Special Collection:
Atomic Layer Deposition (ALD)
Chanwon Jung; Seokhwi Song; Hyunwoo Park; Youngjoon Kim; Eun Jong Lee; Sung Gwon Lee; Hyeongtag Jeon
J. Vac. Sci. Technol. A 39, 042404 (2021)
https://doi.org/10.1116/6.0000887
Atomic Layer Etching (ALE)
Selective atomic layer reaction between GaN and SiN in HBr neutral beam etching
Daisuke Ohori; Takahiro Sawada; Kenta Sugawara; Masaya Okada; Ken Nakata; Kazutaka Inoue; Daisuke Sato; Seiji Samukawa
J. Vac. Sci. Technol. A 39, 042601 (2021)
https://doi.org/10.1116/6.0000867
Thermal atomic layer etching of amorphous and crystalline Al2O3 films
In Special Collection:
Atomic Layer Etching (ALE)
J. Vac. Sci. Technol. A 39, 042602 (2021)
https://doi.org/10.1116/6.0000995
Surface damage formation during atomic layer etching of silicon with chlorine adsorption
In Special Collection:
Atomic Layer Etching (ALE)
J. Vac. Sci. Technol. A 39, 042603 (2021)
https://doi.org/10.1116/6.0001117
Plasma Science and Technology
Effect of nonvertical ion bombardment due to edge effects on polymer surface morphology evolution and etching uniformity
J. Vac. Sci. Technol. A 39, 043001 (2021)
https://doi.org/10.1116/6.0001015
Model analysis of the feature profile evolution during Si etching in HBr-containing plasmas
J. Vac. Sci. Technol. A 39, 043002 (2021)
https://doi.org/10.1116/6.0000970
Postgrowth modification of monolayer graphene films by low-pressure diborane-argon plasma
Pierre Vinchon; Xavier Glad; Germain Robert Bigras; Andranik Sarkissian; Richard Martel; Luc Stafford
J. Vac. Sci. Technol. A 39, 043003 (2021)
https://doi.org/10.1116/6.0000924
A high-power impulse magnetron sputtering global model for argon plasma–chromium target interactions
J. Vac. Sci. Technol. A 39, 043004 (2021)
https://doi.org/10.1116/6.0000865
Evaluation of nickel self-sputtering yields by molecular-dynamics simulation
J. Vac. Sci. Technol. A 39, 043005 (2021)
https://doi.org/10.1116/6.0000979
Focus ring geometry influence on wafer edge voltage distribution for plasma processes
J. Vac. Sci. Technol. A 39, 043006 (2021)
https://doi.org/10.1116/6.0000981
Direct current and high power impulse magnetron sputtering discharges with a positively biased anode
J. Vac. Sci. Technol. A 39, 043007 (2021)
https://doi.org/10.1116/6.0001054
Mechanism of highly selective etching of SiCN by using NF3/Ar-based plasma
J. Vac. Sci. Technol. A 39, 043008 (2021)
https://doi.org/10.1116/6.0000711
Surfaces and Interfaces
Impact of chemical bonding difference of ALD Mo on SiO2 and Al2O3 on the effective work function of the two gate stacks
In Special Collection:
Atomic Layer Deposition (ALD)
Ekaterina Zoubenko; Sara Iacopetti; Kamira Weinfeld; Yaron Kauffmann; Patrick Van Cleemput; Moshe Eizenberg
J. Vac. Sci. Technol. A 39, 043201 (2021)
https://doi.org/10.1116/6.0000964
Molecule deposition in mask-shielded regions revealed by selective Mg vapor deposition
J. Vac. Sci. Technol. A 39, 043202 (2021)
https://doi.org/10.1116/6.0000994
Factors influencing surface carbon contamination in ambient-pressure x-ray photoelectron spectroscopy experiments
In Special Collection:
Commemorating the Career of Charles S. Fadley
J. Vac. Sci. Technol. A 39, 043203 (2021)
https://doi.org/10.1116/6.0001013
Highly selective and vertical etch of silicon dioxide using ruthenium films as an etch mask
J. Vac. Sci. Technol. A 39, 043204 (2021)
https://doi.org/10.1116/6.0001030
Underlying simplicity of 5f unoccupied electronic structure
J. G. Tobin; S. Nowak; S.-W. Yu; P. Roussel; R. Alonso-Mori; T. Kroll; D. Nordlund; T.-C. Weng; D. Sokaras
J. Vac. Sci. Technol. A 39, 043205 (2021)
https://doi.org/10.1116/6.0001007
Surface plasmon resonance is possible in an optical fiber tapered to a point
J. Vac. Sci. Technol. A 39, 043206 (2021)
https://doi.org/10.1116/6.0000965
Two-step model for reduction reaction of ultrathin nickel oxide by hydrogen
In Special Collection:
Commemorating the Career of Charles S. Fadley
J. Vac. Sci. Technol. A 39, 043207 (2021)
https://doi.org/10.1116/6.0001056
Determining valence band offsets in heterojunctions using a single core-level x-ray photoelectron spectrum
In Special Collection:
Commemorating the Career of Charles S. Fadley
J. Vac. Sci. Technol. A 39, 043208 (2021)
https://doi.org/10.1116/6.0001103
Thin Films
Effects of thickness and interlayer on optical properties of AlN films at room and high temperature
Yao Liu; Zhaolun Yang; Xianjian Long; Xiong Zhang; Minxin Yan; Dan Huang; Ian T. Ferguson; Zhe Chuan Feng
J. Vac. Sci. Technol. A 39, 043402 (2021)
https://doi.org/10.1116/6.0000966
Effect of oxygen pressure on stoichiometric transfer in laser ablation of Pr3+ doped Gd2O3–Ga2O3 binary system
In Special Collection:
Gallium Oxide Materials and Devices
J. Vac. Sci. Technol. A 39, 043403 (2021)
https://doi.org/10.1116/6.0001001
Design of line seeds for glancing angle deposition
J. Vac. Sci. Technol. A 39, 043404 (2021)
https://doi.org/10.1116/6.0000998
MoO3 films grown on stepped sapphire (0001) by molecular beam epitaxy
J. Vac. Sci. Technol. A 39, 043406 (2021)
https://doi.org/10.1116/6.0000962
Precise control of time-varying effusion cell flux in molecular beam epitaxy
J. Vac. Sci. Technol. A 39, 043407 (2021)
https://doi.org/10.1116/6.0001019
Thickness-dependent optical properties of aluminum nitride films for mid-infrared wavelengths
J. Vac. Sci. Technol. A 39, 043408 (2021)
https://doi.org/10.1116/6.0000884
Superconformal chemical vapor deposition using plasma-generated atomic species as a consumable growth inhibitor
J. Vac. Sci. Technol. A 39, 043409 (2021)
https://doi.org/10.1116/6.0001018
Investigations on Ba diffusion and SiO evaporation during BaSi2 film formation on Si substrates by thermal evaporation
J. Vac. Sci. Technol. A 39, 043410 (2021)
https://doi.org/10.1116/6.0001081
Area selective deposition of iron films using temperature sensitive masking materials and plasma electrons as reducing agents
In Special Collection:
Special Topic Collection on Area Selective Deposition
J. Vac. Sci. Technol. A 39, 043411 (2021)
https://doi.org/10.1116/6.0001076
Retarded solid state dewetting of thin bismuth films with oxide capping layer
J. Vac. Sci. Technol. A 39, 043412 (2021)
https://doi.org/10.1116/6.0001048
Silicon-ion implantation induced doping and nanoporosity in molecular beam epitaxy grown GaSb epitaxial films
J. Vac. Sci. Technol. A 39, 043413 (2021)
https://doi.org/10.1116/6.0000895
Solid-phase epitaxial crystallization of β-Ga2O3 thin film by KrF excimer laser irradiation from backside of NiO (111)-buffered α-Al2O3 (0001) substrate at room temperature
In Special Collection:
Gallium Oxide Materials and Devices
Hiroyuki Morita; Takumi Matsushima; Kisho Nakamura; Kenta Kaneko; Satoru Kaneko; Akifumi Matsuda; Mamoru Yoshimoto
J. Vac. Sci. Technol. A 39, 043414 (2021)
https://doi.org/10.1116/6.0000996
Vapor deposition of CsPbBr3 thin films by evaporation of CsBr and PbBr2
In Special Collection:
Organic, Inorganic, and Hybrid Halide Perovskite Thin Films
J. Vac. Sci. Technol. A 39, 043415 (2021)
https://doi.org/10.1116/6.0000875
Zirconia-titania-doped tantala optical coatings for low mechanical loss Bragg mirrors
In Special Collection:
Functional Coatings
Émile Lalande; Alexandre W. Lussier; Carl Lévesque; Marianne Ward; Bill Baloukas; Ludvik Martinu; Gabriele Vajente; Garilynn Billingsley; Alena Ananyeva; Riccardo Bassiri; Martin M. Fejer; François Schiettekatte
J. Vac. Sci. Technol. A 39, 043416 (2021)
https://doi.org/10.1116/6.0001074
Errata
Low-temperature etching of silicon oxide and silicon nitride with hydrogen fluoride
Thorsten Lill, Mingmei Wang, et al.
Atomic layer deposition of nanofilms on porous polymer substrates: Strategies for success
Brian C. Welch, Jeanne Casetta, et al.
Surface passivation approaches for silicon, germanium, and III–V semiconductors
Roel J. Theeuwes, Wilhelmus M. M. Kessels, et al.