Issues

Letters

Stoichiometry controlled homogeneous ternary oxide growth in showerhead atomic layer deposition reactor and application for Zr_xHf_1−xO₂

In Special Collection: Atomic Layer Deposition (ALD)

Triratna Muneshwar; Doug Barlage; Ken Cadien

J. Vac. Sci. Technol. A 39, 030401 (2021) https://doi.org/10.1116/6.0000856

Abstract

View articletitled, Stoichiometry controlled homogeneous ternary oxide growth in showerhead atomic layer deposition reactor and application for Zr_xHf_1−xO₂

Supplementary Material

Open the PDF for in another window

Topographical selective deposition: A comparison between plasma-enhanced atomic layer deposition/sputtering and plasma-enhanced atomic layer deposition/quasi-atomic layer etching approaches

In Special Collection: Special Topic Collection on Area Selective Deposition

Moustapha Jaffal; Taguhi Yeghoyan; Gauthier Lefèvre; Rémy Gassilloud; Nicolas Possémé; Christophe Vallée; Marceline Bonvalot

J. Vac. Sci. Technol. A 39, 030402 (2021) https://doi.org/10.1116/6.0000969

Abstract

View articletitled, Topographical selective deposition: A comparison between plasma-enhanced atomic layer deposition/sputtering and plasma-enhanced atomic layer deposition/quasi-atomic layer etching approaches

Open the PDF for in another window

Band alignment modulation of atomic layer deposition-prepared Al₂O₃/β-Ga₂O₃ heterojunction interface by deposition temperature

In Special Collection: Gallium Oxide Materials and Devices

Shun Zhou; Hao Liu; Linpeng Dong; Weiguo Liu; Shigeng Song; Wenjun Liu

J. Vac. Sci. Technol. A 39, 030403 (2021) https://doi.org/10.1116/6.0000951

Abstract

View articletitled, Band alignment modulation of atomic layer deposition-prepared Al₂O₃/<em>β</em>-Ga₂O₃ heterojunction interface by deposition temperature

Open the PDF for in another window

N-type doping of low-pressure chemical vapor deposition grown β-Ga₂O₃ thin films using solid-source germanium

In Special Collection: Gallium Oxide Materials and Devices

Praneeth Ranga; Arkka Bhattacharyya; Luisa Whittaker-Brooks; Michael A. Scarpulla; Sriram Krishnamoorthy

J. Vac. Sci. Technol. A 39, 030404 (2021) https://doi.org/10.1116/6.0001004

Abstract

View articletitled, N-type doping of low-pressure chemical vapor deposition grown β-Ga₂O₃ thin films using solid-source germanium

Open the PDF for in another window

Review Articles

Thermal atomic layer etching: A review

In Special Collection: Atomic Layer Etching (ALE)

Andreas Fischer; Aaron Routzahn; Steven M. George; Thorsten Lill

J. Vac. Sci. Technol. A 39, 030801 (2021) https://doi.org/10.1116/6.0000894

Abstract

View articletitled, Thermal atomic layer etching: A review

Open the PDF for in another window

Ion implantation in β-Ga₂O₃: Physics and technology

In Special Collection: Gallium Oxide Materials and Devices

Alena Nikolskaya; Evgenia Okulich; Dmitry Korolev; Anton Stepanov; Dmitry Nikolichev; Alexey Mikhaylov; David Tetelbaum; Aleksei Almaev; Charles Airton Bolzan; Antônio Buaczik, Jr.; Raquel Giulian; Pedro Luis Grande; Ashok Kumar; Mahesh Kumar; Daniela Gogova

J. Vac. Sci. Technol. A 39, 030802 (2021) https://doi.org/10.1116/6.0000928

Abstract

View articletitled, Ion implantation in β-Ga₂O₃: Physics and technology

Open the PDF for in another window

Heterovalent semiconductor structures and devices grown by molecular beam epitaxy

In Special Collection: Honoring Dr. Art Gossard's 85th Birthday and His Leadership in the Science and Technology of Molecular Beam Epitaxy

Yong-Hang Zhang; David J. Smith

J. Vac. Sci. Technol. A 39, 030803 (2021) https://doi.org/10.1116/6.0000802

Abstract

View articletitled, Heterovalent semiconductor structures and devices grown by molecular beam epitaxy

Open the PDF for in another window

CHORUS

Epitaxial integration of BaTiO₃ on Si for electro-optic applications

Wei Guo; Agham B. Posadas; Alexander A. Demkov

J. Vac. Sci. Technol. A 39, 030804 (2021) https://doi.org/10.1116/6.0000923

Abstract

View articletitled, Epitaxial integration of BaTiO₃ on Si for electro-optic applications

Open the PDF for in another window

Celebrating 40 Years of the AVS Peter Mark Award

Preface

Preface for the AVS Peter Mark award 40th anniversary collection

In Special Collection: Celebrating 40 Years of the AVS Peter Mark Award

Eray S. Aydil; Wilhelmus M. M. Kessels; Stephanie Law; Mohan Sankaran; Joshua M. O. Zide

J. Vac. Sci. Technol. A 39, 031601 (2021) https://doi.org/10.1116/6.0001005

Extract

View articletitled, Preface for the AVS Peter Mark award 40th anniversary collection

Open the PDF for in another window

ARTICLES

2-D Materials

Efficacy of boron nitride encapsulation against plasma-processing of 2D semiconductor layers

Pawan Kumar; Kelotchi S. Figueroa; Alexandre C. Foucher; Kiyoung Jo; Natalia Acero; Eric A. Stach; Deep Jariwala

J. Vac. Sci. Technol. A 39, 032201 (2021) https://doi.org/10.1116/6.0000874

Abstract

View articletitled, Efficacy of boron nitride encapsulation against plasma-processing of 2D semiconductor layers

Supplementary Material

Open the PDF for in another window

CHORUS

Atomic Layer Deposition (ALD)

Epitaxial growth of highly textured ZnO thin films on Si using an AlN buffer layer by atomic layer deposition

In Special Collection: Atomic Layer Deposition (ALD)

Maximilian Kolhep; Cheng Sun; Jürgen Bläsing; Björn Christian; Margit Zacharias

J. Vac. Sci. Technol. A 39, 032401 (2021) https://doi.org/10.1116/6.0000793

Abstract

View articletitled, Epitaxial growth of highly textured ZnO thin films on Si using an AlN buffer layer by atomic layer deposition

Supplementary Material

Open the PDF for in another window

Mechanism for growth initiation on aminosilane-functionalized SiO₂ during area-selective atomic layer deposition of ZrO₂

In Special Collection: Atomic Layer Deposition (ALD)

Wanxing Xu; Paul C. Lemaire; Kashish Sharma; Ryan J. Gasvoda; Dennis M. Hausmann; Sumit Agarwal

J. Vac. Sci. Technol. A 39, 032402 (2021) https://doi.org/10.1116/6.0000699

Abstract

View articletitled, Mechanism for growth initiation on aminosilane-functionalized SiO₂ during area-selective atomic layer deposition of ZrO₂

Open the PDF for in another window

Atomic layer deposition of AlN using atomic layer annealing—Towards high-quality AlN on vertical sidewalls

In Special Collection: Atomic Layer Deposition (ALD)

Elmeri Österlund; Heli Seppänen; Kristina Bespalova; Ville Miikkulainen; Mervi Paulasto-Kröckel

J. Vac. Sci. Technol. A 39, 032403 (2021) https://doi.org/10.1116/6.0000724

Abstract

View articletitled, Atomic layer deposition of AlN using atomic layer annealing—Towards high-quality AlN on vertical sidewalls

Supplementary Material

Open the PDF for in another window

Phosphites as precursors in atomic layer deposition thin film synthesis

In Special Collection: Atomic Layer Deposition (ALD)

Kristian B. Kvamme; Amund Ruud; Kristian Weibye; Timo Sajavaara; Ola Nilsen

J. Vac. Sci. Technol. A 39, 032404 (2021) https://doi.org/10.1116/6.0000844

Abstract

View articletitled, Phosphites as precursors in atomic layer deposition thin film synthesis

Open the PDF for in another window

Atomic layer deposition of sodium fluoride thin films

In Special Collection: Atomic Layer Deposition (ALD)

Sara Kuraitis; Donghyeon Kang; Anil U. Mane; Hua Zhou; Jake Soares; Jeffrey W. Elam; Elton Graugnard

J. Vac. Sci. Technol. A 39, 032405 (2021) https://doi.org/10.1116/6.0000847

Abstract

View articletitled, Atomic layer deposition of sodium fluoride thin films

Supplementary Material

Open the PDF for in another window

CHORUS

Plasma-enhanced atomic layer deposited indium oxide film using a novel dimethylbutylamino-trimethylindium precursor for thin film transistors

In Special Collection: Atomic Layer Deposition (ALD)

Su-Hwan Choi; Hyun-Jun Jeong; TaeHyun Hong; Yong Hwan Na; Chi Kwon Park; Myung Yong Lim; Seong Hoon Jeong; Jun Hyung Lim; Jin-Seong Park

J. Vac. Sci. Technol. A 39, 032406 (2021) https://doi.org/10.1116/6.0000842

Abstract

View articletitled, Plasma-enhanced atomic layer deposited indium oxide film using a novel dimethylbutylamino-trimethylindium precursor for thin film transistors

Open the PDF for in another window

Hf_1−xZr_xO₂ and HfO₂/ZrO₂ gate dielectrics with extremely low density of interfacial defects using low temperature atomic layer deposition on GaN and InP

Kaveh Ahadi; Ken Cadien

J. Vac. Sci. Technol. A 39, 032407 (2021) https://doi.org/10.1116/6.0000914

Abstract

View articletitled, Hf_1−xZr_xO₂ and HfO₂/ZrO₂ gate dielectrics with extremely low density of interfacial defects using low temperature atomic layer deposition on GaN and InP

Open the PDF for in another window

Influence of quantum-confined device fabrication on semiconductor-laser theory

In Special Collection: Honoring Dr. Art Gossard's 85th Birthday and His Leadership in the Science and Technology of Molecular Beam Epitaxy

Weng W. Chow; Frank Jahnke

J. Vac. Sci. Technol. A 39, 032408 (2021) https://doi.org/10.1116/6.0000767

Abstract

View articletitled, Influence of quantum-confined device fabrication on semiconductor-laser theory

Open the PDF for in another window

(^tBuN)SiMe₂NMe₂—A new N,N′-κ₂-monoanionic ligand for atomic layer deposition precursors

In Special Collection: Atomic Layer Deposition (ALD)

Matthew B. E. Griffiths; David Zanders; Michael A. Land; Jason D. Masuda; Anjana Devi; Seán T. Barry

J. Vac. Sci. Technol. A 39, 032409 (2021) https://doi.org/10.1116/6.0000795

Abstract

View articletitled, (^tBuN)SiMe₂NMe₂—A new <em>N,N</em>′-<em>κ</em>₂-monoanionic ligand for atomic layer deposition precursors

Supplementary Material

Open the PDF for in another window

Surface reaction of the hafnium precursor with a linked amido-cyclopentadienyl ligand: A density functional theory study

In Special Collection: Atomic Layer Deposition (ALD)

Romel Hidayat; Hye-Lee Kim; Hohoon Kim; Younghun Byun; Jongsoo Lee; Won-Jun Lee

J. Vac. Sci. Technol. A 39, 032410 (2021) https://doi.org/10.1116/6.0000796

Abstract

View articletitled, Surface reaction of the hafnium precursor with a linked amido-cyclopentadienyl ligand: A density functional theory study

Supplementary Material

Open the PDF for in another window

Atomic layer deposition and characterization of Zn-doped Ga₂O₃ films

In Special Collection: Atomic Layer Deposition (ALD)

Zsófia Baji; Ildikó Cora; Zsolt Endre Horváth; Emil Agócs; Zoltán Szabó

J. Vac. Sci. Technol. A 39, 032411 (2021) https://doi.org/10.1116/6.0000838

Abstract

View articletitled, Atomic layer deposition and characterization of Zn-doped Ga₂O₃ films

Open the PDF for in another window

Atomic layer deposition and selective etching of ruthenium for area-selective deposition: Temperature dependence and supercycle design

In Special Collection: Special Topic Collection on Area Selective Deposition

Martijn F. J. Vos; Sonali N. Chopra; John G. Ekerdt; Sumit Agarwal; Wilhelmus M. M. (Erwin) Kessels; Adriaan J. M. Mackus

J. Vac. Sci. Technol. A 39, 032412 (2021) https://doi.org/10.1116/6.0000912

Abstract

View articletitled, Atomic layer deposition and selective etching of ruthenium for area-selective deposition: Temperature dependence and supercycle design

Supplementary Material

Open the PDF for in another window

CHORUS

Oxidative molecular layer deposition of PEDOT using volatile antimony(V) chloride oxidant

In Special Collection: Atomic Layer Deposition (ALD)

Amanda A. Volk; Jung-Sik Kim; Jovenal Jamir; Elizabeth C. Dickey; Gregory N. Parsons

J. Vac. Sci. Technol. A 39, 032413 (2021) https://doi.org/10.1116/6.0000791

Abstract

View articletitled, Oxidative molecular layer deposition of PEDOT using volatile antimony(V) chloride oxidant

Open the PDF for in another window

Atomic layer deposition of chromium oxide—An interplay between deposition and etching

In Special Collection: Atomic Layer Deposition (ALD)

Bireswar Mandol; Neha Mahuli; Kenichi Ohno; Lance Scudder; Shaibal K. Sarkar

J. Vac. Sci. Technol. A 39, 032414 (2021) https://doi.org/10.1116/6.0000896

Abstract

View articletitled, Atomic layer deposition of chromium oxide—An interplay between deposition and etching

Open the PDF for in another window

Influence of plasma power on deposition mechanism and structural properties of MoO_x thin films by plasma enhanced atomic layer deposition

In Special Collection: Atomic Layer Deposition (ALD)

Chen Wang; Chun-Hui Bao; Wan-Yu Wu; Chia-Hsun Hsu; Ming-Jie Zhao; Shui-Yang Lien; Wen-Zhang Zhu

J. Vac. Sci. Technol. A 39, 032415 (2021) https://doi.org/10.1116/6.0000968

Abstract

View articletitled, Influence of plasma power on deposition mechanism and structural properties of MoO<em>_x</em> thin films by plasma enhanced atomic layer deposition

Open the PDF for in another window

Low temperature Topographically Selective Deposition by Plasma Enhanced Atomic Layer Deposition with ion bombardment assistance

In Special Collection: Special Topic Collection on Area Selective Deposition

Taguhi Yeghoyan; Vincent Pesce; Moustapha Jaffal; Gauthier Lefevre; Rémy Gassilloud; Nicolas Posseme; Marceline Bonvalot; Christophe Vallée

J. Vac. Sci. Technol. A 39, 032416 (2021) https://doi.org/10.1116/6.0000649

Abstract

View articletitled, Low temperature Topographically Selective Deposition by Plasma Enhanced Atomic Layer Deposition with ion bombardment assistance

Open the PDF for in another window

Photovoltaics and Energy

Impact of precursor concentration on the properties of perovskite solar cells obtained from the dehydrated lead acetate precursors

In Special Collection: Organic, Inorganic, and Hybrid Halide Perovskite Thin Films

Dahiru M. Sanni; Aditya S. Yerramilli; Esidor Ntsoenzok; Sharafadeen A. Adeniji; Omolara V. Oyelade; Richard K. Koech; Adebayo A. Fashina; Terry L. Alford

J. Vac. Sci. Technol. A 39, 032801 (2021) https://doi.org/10.1116/6.0000714

Abstract

View articletitled, Impact of precursor concentration on the properties of perovskite solar cells obtained from the dehydrated lead acetate precursors

Supplementary Material

Open the PDF for in another window

Effect of anti-reflection coating on the performance of silicon solar cells with nanocrystalline quantum dots downshifting film

Ala H. Sabeeh; Alyssa N. Brigman; Jerzy Ruzyllo

J. Vac. Sci. Technol. A 39, 032802 (2021) https://doi.org/10.1116/6.0000833

Abstract

View articletitled, Effect of anti-reflection coating on the performance of silicon solar cells with nanocrystalline quantum dots downshifting film

Open the PDF for in another window

Plasma Science and Technology

Plasma-jet sterilization enhanced by ion wind

Hongcheng Zhu; Linxiu Jiang; Shouru Xie; Yongrong Jiang; Hua Li

J. Vac. Sci. Technol. A 39, 033001 (2021) https://doi.org/10.1116/6.0000703

Abstract

View articletitled, Plasma-jet sterilization enhanced by ion wind

Open the PDF for in another window

Etching with electron beam-generated plasmas: Selectivity versus ion energy in silicon-based films

S. G. Walton; D. R. Boris; S. G. Rosenberg; H. Miyazoe; E. A. Joseph; S. U. Engelmann

J. Vac. Sci. Technol. A 39, 033002 (2021) https://doi.org/10.1116/6.0000868

Abstract

View articletitled, Etching with electron beam-generated plasmas: Selectivity versus ion energy in silicon-based films

Open the PDF for in another window

Scaling of atomic layer etching of SiO₂ in fluorocarbon plasmas: Transient etching and surface roughness

In Special Collection: Atomic Layer Etching (ALE)

Xifeng Wang; Mingmei Wang; Peter Biolsi; Mark J. Kushner

J. Vac. Sci. Technol. A 39, 033003 (2021) https://doi.org/10.1116/6.0000941

Abstract

View articletitled, Scaling of atomic layer etching of SiO₂ in fluorocarbon plasmas: Transient etching and surface roughness

Open the PDF for in another window

CHORUS

Study of plasma etching impact on chemoepitaxy directed self-assembly

Maria Gabriela Gusmão Cacho; Khatia Benotmane; Aurélie Le Pennec; Charlotte Bouet; Patricia Pimenta-Barros; Guido Rademaker; Maxime Argoud; Raluca Tiron; Nicolas Possémé

J. Vac. Sci. Technol. A 39, 033004 (2021) https://doi.org/10.1116/6.0000850

Abstract

View articletitled, Study of plasma etching impact on chemoepitaxy directed self-assembly

Open the PDF for in another window

Gate spacers etching of Si₃N₄ using cyclic approach for 3D CMOS devices

Valentin Bacquié; Aurélien Tavernier; François Boulard; Olivier Pollet; Nicolas Possémé

J. Vac. Sci. Technol. A 39, 033005 (2021) https://doi.org/10.1116/6.0000871

Abstract

View articletitled, Gate spacers etching of Si₃N₄ using cyclic approach for 3D CMOS devices

Open the PDF for in another window

Surfaces and Interfaces

Correlation between electrical conductivity and luminescence properties in β-Ga₂O₃:Cr³⁺ and β-Ga₂O₃:Cr,Mg single crystals

In Special Collection: Gallium Oxide Materials and Devices

Vyacheslav Vasyltsiv; Andriy Luchechko; Yaroslav Zhydachevskyy; Lyudmyla Kostyk; Roman Lys; Dmytro Slobodzyan; Rafał Jakieła; Bohdan Pavlyk; Andrzej Suchocki

J. Vac. Sci. Technol. A 39, 033201 (2021) https://doi.org/10.1116/6.0000859

Abstract

View articletitled, Correlation between electrical conductivity and luminescence properties in β-Ga₂O₃:Cr³⁺ and β-Ga₂O₃:Cr,Mg single crystals

Open the PDF for in another window

Effect of metal contacts on (100) β-Ga₂O₃ Schottky barriers

In Special Collection: Gallium Oxide Materials and Devices

Luke A. M. Lyle; Kunyao Jiang; Elizabeth V. Favela; Kalyan Das; Andreas Popp; Zbigniew Galazka; Guenter Wagner; Lisa M. Porter

J. Vac. Sci. Technol. A 39, 033202 (2021) https://doi.org/10.1116/6.0000877

Abstract

View articletitled, Effect of metal contacts on (100) β-Ga₂O₃ Schottky barriers

Supplementary Material

Open the PDF for in another window

Substrate orientation dependent current transport mechanisms in β-Ga₂O₃/Si based Schottky barrier diodes

In Special Collection: Gallium Oxide Materials and Devices

Manoj K Yadav; Arnab Mondal; Satinder K. Sharma; Ankush Bag

J. Vac. Sci. Technol. A 39, 033203 (2021) https://doi.org/10.1116/6.0000858

Abstract

View articletitled, Substrate orientation dependent current transport mechanisms in <em>β</em>-Ga₂O₃/Si based Schottky barrier diodes

Open the PDF for in another window

Quantitative depth profiling of Al in SiC using time of flight–secondary ion mass spectroscopy

Vincent S. Smentkowski; Shubhodeep Goswami

J. Vac. Sci. Technol. A 39, 033204 (2021) https://doi.org/10.1116/6.0000905

Abstract

View articletitled, Quantitative depth profiling of Al in SiC using time of flight–secondary ion mass spectroscopy

Open the PDF for in another window

Growth and characterization of II-VI semiconductor multilayer quantum-well structures for two-color quantum well infrared photodetector applications

Luis Hernandez-Mainet; Guopeng Chen; Amir Zangiabadi; Aidong Shen; Maria C. Tamargo

J. Vac. Sci. Technol. A 39, 033205 (2021) https://doi.org/10.1116/6.0000947

Abstract

View articletitled, Growth and characterization of II-VI semiconductor multilayer quantum-well structures for two-color quantum well infrared photodetector applications

Open the PDF for in another window

CHORUS

Thin Films

Self-assembled nanocolumns in Bi₂Se₃ grown by molecular beam epitaxy

Theresa P. Ginley; Stephanie Law

J. Vac. Sci. Technol. A 39, 033401 (2021) https://doi.org/10.1116/6.0000831

Abstract

View articletitled, Self-assembled nanocolumns in Bi₂Se₃ grown by molecular beam epitaxy

Open the PDF for in another window

Delta-doped β-(Al_xGa_1−x)₂O₃/Ga₂O₃ heterostructure field-effect transistors by ozone molecular beam epitaxy

In Special Collection: Gallium Oxide Materials and Devices

Marko J. Tadjer; Kohei Sasaki; Daiki Wakimoto; Travis J. Anderson; Michael A. Mastro; James C. Gallagher; Alan G. Jacobs; Alyssa L. Mock; Andrew D. Koehler; Mona Ebrish; Karl D. Hobart; Akito Kuramata

J. Vac. Sci. Technol. A 39, 033402 (2021) https://doi.org/10.1116/6.0000932

Abstract

View articletitled, Delta-doped β-(Al_xGa_1−x)₂O₃/Ga₂O₃ heterostructure field-effect transistors by ozone molecular beam epitaxy

Supplementary Material

Open the PDF for in another window

Topotactic crystal structure transformation from spinel ferrite to wüstite in epitaxial Fe₃O₄ films via Kr ion irradiation

Yang Liu; Yuki Hisamatsu; Sonia Sharmin; Daiki Oshima; Satoshi Iwata; Takeshi Kato; Daiichiro Sekiba; Eiji Kita; Hideto Yanagihara

J. Vac. Sci. Technol. A 39, 033403 (2021) https://doi.org/10.1116/6.0000885

Abstract

View articletitled, Topotactic crystal structure transformation from spinel ferrite to wüstite in epitaxial Fe₃O₄ films via Kr ion irradiation

Open the PDF for in another window

Enhancement in the tribological performance of WS_x/a-C multilayer films with Al sublayers in vacuum

Fang-er Yang; Wan-kun Zhang; Gong-qi Wang; Tao Wang; Xiao-hua Zheng

J. Vac. Sci. Technol. A 39, 033404 (2021) https://doi.org/10.1116/6.0000785

Abstract

View articletitled, Enhancement in the tribological performance of WS<em>_x</em>/a-C multilayer films with Al sublayers in vacuum

Open the PDF for in another window

Influence of W content on microstructure and surface morphology of hard Ni-W films fabricated by magnetron co-sputtering

Amir R. Esmaeili; Noshin Mir; Reza Mohammadi

J. Vac. Sci. Technol. A 39, 033405 (2021) https://doi.org/10.1116/6.0000915

Abstract

View articletitled, Influence of W content on microstructure and surface morphology of hard Ni-W films fabricated by magnetron co-sputtering

Supplementary Material

Open the PDF for in another window

Properties of indium tin oxide thin films grown by Ar ion beam sputter deposition

Carsten Bundesmann; Jens Bauer; Annemarie Finzel; Jürgen W. Gerlach; Wolfgang Knolle; Anke Hellmich; Ron Synowicki

J. Vac. Sci. Technol. A 39, 033406 (2021) https://doi.org/10.1116/6.0000917

Abstract

View articletitled, Properties of indium tin oxide thin films grown by Ar ion beam sputter deposition

Open the PDF for in another window

Epitaxial superconductor-semiconductor two-dimensional systems for superconducting quantum circuits

In Special Collection: Honoring Dr. Art Gossard's 85th Birthday and His Leadership in the Science and Technology of Molecular Beam Epitaxy

Joseph O’Connell Yuan; Kaushini S. Wickramasinghe; William M. Strickland; Matthieu C. Dartiailh; Kasra Sardashti; Mehdi Hatefipour; Javad Shabani

J. Vac. Sci. Technol. A 39, 033407 (2021) https://doi.org/10.1116/6.0000918

Abstract

View articletitled, Epitaxial superconductor-semiconductor two-dimensional systems for superconducting quantum circuits

Open the PDF for in another window

Multiple carrier transport in high-quality α-Sn films grown on CdTe (001) by molecular beam epitaxy

In Special Collection: Honoring Dr. Art Gossard's 85th Birthday and His Leadership in the Science and Technology of Molecular Beam Epitaxy

Yuanfeng Ding; Jinshan Yao; Ziyuan Yuan; Chen Li; Ming-Hui Lu; Hong Lu; Yan-Feng Chen

J. Vac. Sci. Technol. A 39, 033408 (2021) https://doi.org/10.1116/6.0000756

Abstract

View articletitled, Multiple carrier transport in high-quality α-Sn films grown on CdTe (001) by molecular beam epitaxy

Open the PDF for in another window

Large-scale synthesis of atomically thin ultrawide bandgap β-Ga₂O₃ using a liquid gallium squeezing technique

In Special Collection: Gallium Oxide Materials and Devices

Hyunik Park; Yongha Choi; Sujung Yang; Jinho Bae; Jihyun Kim

J. Vac. Sci. Technol. A 39, 033409 (2021) https://doi.org/10.1116/6.0000927

Abstract

View articletitled, Large-scale synthesis of atomically thin ultrawide bandgap β-Ga₂O₃ using a liquid gallium squeezing technique

Supplementary Material

Open the PDF for in another window

High responsivity solar-blind metal-semiconductor-metal photodetector based on α-Ga₂O₃

In Special Collection: Gallium Oxide Materials and Devices

Jinho Bae; Dae-Woo Jeon; Ji-Hyeon Park; Jihyun Kim

J. Vac. Sci. Technol. A 39, 033410 (2021) https://doi.org/10.1116/6.0000940

Abstract

View articletitled, High responsivity solar-blind metal-semiconductor-metal photodetector based on α-Ga₂O₃

Open the PDF for in another window

Defect species in Ga-doped ZnO films characterized by photoluminescence

Housei Akazawa

J. Vac. Sci. Technol. A 39, 033411 (2021) https://doi.org/10.1116/6.0000937

Abstract

View articletitled, Defect species in Ga-doped ZnO films characterized by photoluminescence

Open the PDF for in another window

Microstructure and optical properties of sputter-deposited Ga₂O₃ films

In Special Collection: Gallium Oxide Materials and Devices

Eduardo Vega; Sundar B. Isukapati; Tom N. Oder

J. Vac. Sci. Technol. A 39, 033412 (2021) https://doi.org/10.1116/6.0000938

Abstract

View articletitled, Microstructure and optical properties of sputter-deposited Ga₂O₃ films

Open the PDF for in another window

CHORUS

In situ compositional mapping of combinatorial materials libraries by scanning low-angle x-ray spectroscopy

Jeonggoo Kim; Mikhail D. Strikovski; Steven L. Garrahan; Richard Mozelack; Jonathan E. Parkinson; Solomon H. Kolagani

J. Vac. Sci. Technol. A 39, 033413 (2021) https://doi.org/10.1116/6.0000862

Abstract

View articletitled, <em>In situ</em> compositional mapping of combinatorial materials libraries by scanning low-angle x-ray spectroscopy

Open the PDF for in another window

Influence of oxygen partial pressure on properties of monoclinic Ga₂O₃ deposited on sapphire substrates

In Special Collection: Gallium Oxide Materials and Devices

Jaime A. Freitas, Jr.; James C. Culbertson; Neeraj Nepal; Alyssa L. Mock; Marko J. Tadjer; Zixuan Feng; Hongping Zhao

J. Vac. Sci. Technol. A 39, 033414 (2021) https://doi.org/10.1116/6.0000851

Abstract

View articletitled, Influence of oxygen partial pressure on properties of monoclinic Ga₂O₃ deposited on sapphire substrates

Open the PDF for in another window

Errata