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Letters

Universal scaling relationship for atomic layer etching

In Special Collection: Celebrating 40 Years of the AVS Peter Mark Award

Keren J. Kanarik; Samantha Tan; Wenbing Yang; Ivan L. Berry; Yang Pan; Richard A. Gottscho

J. Vac. Sci. Technol. A 39, 010401 (2021) https://doi.org/10.1116/6.0000762

Abstract

View articletitled, Universal scaling relationship for atomic layer etching

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Review Articles

Review of key vertical-cavity laser and modulator advances enabled by advanced MBE technology

In Special Collection: Honoring Dr. Art Gossard's 85th Birthday and His Leadership in the Science and Technology of Molecular Beam Epitaxy

Larry A. Coldren

J. Vac. Sci. Technol. A 39, 010801 (2021) https://doi.org/10.1116/6.0000574

Abstract

View articletitled, Review of key vertical-cavity laser and modulator advances enabled by advanced MBE technology

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CHORUS

Techniques for epitaxial site-selective growth of quantum dots

In Special Collection: Honoring Dr. Art Gossard's 85th Birthday and His Leadership in the Science and Technology of Molecular Beam Epitaxy

Lauren N. McCabe; Joshua M. O. Zide

J. Vac. Sci. Technol. A 39, 010802 (2021) https://doi.org/10.1116/6.0000623

Abstract

View articletitled, Techniques for epitaxial site-selective growth of quantum dots

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CHORUS

Perspectives

Acquisition and analysis of scanning tunneling spectroscopy data—WSe₂ monolayer

In Special Collection: Celebrating 40 Years of the AVS Peter Mark Award

Randall M. Feenstra; Grayson R. Frazier; Yi Pan; Stefan Fölsch; Yu-Chuan Lin; Bhakti Jariwala; Kehao Zhang; Joshua A. Robinson

J. Vac. Sci. Technol. A 39, 011001 (2021) https://doi.org/10.1116/6.0000684

Abstract

View articletitled, Acquisition and analysis of scanning tunneling spectroscopy data—WSe2 monolayer

Supplementary Material

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CHORUS

Tutorials

Practical guide to the use of backgrounds in quantitative XPS

In Special Collection: Special Topic Collection: Reproducibility Challenges and Solutions

Sven Tougaard

J. Vac. Sci. Technol. A 39, 011201 (2021) https://doi.org/10.1116/6.0000661

Abstract

View articletitled, Practical guide to the use of backgrounds in quantitative XPS

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ARTICLES

2-D Materials

In-Cu alloy substrates for low-temperature chemical vapor deposition of Mo₂C

Katherine T. Young; Colter Smith; Dale A. Hitchcock; Eric M. Vogel

J. Vac. Sci. Technol. A 39, 012201 (2021) https://doi.org/10.1116/6.0000735

Abstract

View articletitled, In-Cu alloy substrates for low-temperature chemical vapor deposition of Mo2C

Supplementary Material

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Atomic Layer Deposition (ALD)

Interface characteristics of β-Ga₂O₃/Al₂O₃/Pt capacitors after postmetallization annealing

In Special Collection: Gallium Oxide Materials and Devices

Masafumi Hirose; Toshihide Nabatame; Yoshihiro Irokawa; Erika Maeda; Akihiko Ohi; Naoki Ikeda; Liwen Sang; Yasuo Koide; Hajime Kiyono

J. Vac. Sci. Technol. A 39, 012401 (2021) https://doi.org/10.1116/6.0000626

Abstract

View articletitled, Interface characteristics of β-Ga2O3/Al2O3/Pt capacitors after postmetallization annealing

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Insight into the removal and reapplication of small inhibitor molecules during area-selective atomic layer deposition of SiO₂

In Special Collection: Special Topic Collection on Area Selective Deposition

Marc J. M. Merkx; Rick G. J. Jongen; Alfredo Mameli; Paul C. Lemaire; Kashish Sharma; Dennis M. Hausmann; Wilhelmus M. M. Kessels; Adriaan J. M. Mackus

J. Vac. Sci. Technol. A 39, 012402 (2021) https://doi.org/10.1116/6.0000652

Abstract

View articletitled, Insight into the removal and reapplication of small inhibitor molecules during area-selective atomic layer deposition of SiO2

Supplementary Material

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Characterization of vapor draw vessel performance for low-volatility solid precursor delivery

In Special Collection: Atomic Layer Deposition (ALD)

James E. Maslar; William A. Kimes; Brent A. Sperling; Ravindra K. Kanjolia

J. Vac. Sci. Technol. A 39, 012403 (2021) https://doi.org/10.1116/6.0000676

Abstract

View articletitled, Characterization of vapor draw vessel performance for low-volatility solid precursor delivery

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Dependence of inherent selective atomic layer deposition of FeO_x on Pt nanoparticles on the coreactant and temperature

In Special Collection: Special Topic Collection on Area Selective Deposition

Jiaming Cai; Marc J. M. Merkx; Yuxiao Lan; Yao Jing; Kun Cao; Yanwei Wen; Wilhelmus M. M. Kessels; Adriaan J. M. Mackus; Rong Chen

J. Vac. Sci. Technol. A 39, 012404 (2021) https://doi.org/10.1116/6.0000668

Abstract

View articletitled, Dependence of inherent selective atomic layer deposition of FeOx on Pt nanoparticles on the coreactant and temperature

Supplementary Material

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Selective atomic layer deposition on flexible polymeric substrates employing a polyimide adhesive as a physical mask

In Special Collection: Special Topic Collection on Area Selective Deposition

Matin Forouzmehr; Serges Zambou; Kimmo Lahtonen; Mari Honkanen; Rafi Md Nazmul Anam; Aleksi Ruhanen; Chakra Rokaya; Donald Lupo; Paul R. Berger

J. Vac. Sci. Technol. A 39, 012405 (2021) https://doi.org/10.1116/6.0000566

Abstract

View articletitled, Selective atomic layer deposition on flexible polymeric substrates employing a polyimide adhesive as a physical mask

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Modeling atomic layer deposition process parameters to achieve dense nanocrystal-based nanocomposites

In Special Collection: Atomic Layer Deposition (ALD)

Austin Cendejas; Dillon Moher; Elijah Thimsen

J. Vac. Sci. Technol. A 39, 012406 (2021) https://doi.org/10.1116/6.0000588

Abstract

View articletitled, Modeling atomic layer deposition process parameters to achieve dense nanocrystal-based nanocomposites

Supplementary Material

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Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions

In Special Collection: Atomic Layer Deposition (ALD)

Md. Istiaque Chowdhury; Mark Sowa; Alexander C. Kozen; Brandon A. Krick; Jewel Haik; Tomas F. Babuska; Nicholas C. Strandwitz

J. Vac. Sci. Technol. A 39, 012407 (2021) https://doi.org/10.1116/6.0000717

Abstract

View articletitled, Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions

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Plasma enhanced atomic layer deposition of thin film Li_1+xMn_2−xO₄ for realization of all solid-state 3D lithium-ion microbatteries

In Special Collection: Atomic Layer Deposition (ALD)

Ryan Sheil; Danielle Butts; Katherine Jungjohann; Jinkyoung Yoo; Bruce Dunn; Jane P. Chang

J. Vac. Sci. Technol. A 39, 012408 (2021) https://doi.org/10.1116/6.0000644

Abstract

View articletitled, Plasma enhanced atomic layer deposition of thin film Li1+xMn2−xO4 for realization of all solid-state 3D lithium-ion microbatteries

Supplementary Material

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Ultra-thin Al₂O₃ capped with SiN_x enabling implied open-circuit voltage reaching 720 mV on industrial p-type Cz c-Si wafers for passivated emitter and rear solar cells

In Special Collection: Atomic Layer Deposition (ALD)

Gamze Kökbudak; Ahmet E. Keçeci; Hisham Nasser; Raşit Turan

J. Vac. Sci. Technol. A 39, 012409 (2021) https://doi.org/10.1116/6.0000692

Abstract

View articletitled, Ultra-thin Al2O3 capped with SiNx enabling implied open-circuit voltage reaching 720 mV on industrial p-type Cz c-Si wafers for passivated emitter and rear solar cells

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Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO₂

In Special Collection: Special Topic Collection on Area Selective Deposition

Samia Belahcen; Christophe Vallée; Ahmad Bsiesy; Ahmad Chaker; Moustapha Jaffal; Taguhi Yeghoyan; Marceline Bonvalot

J. Vac. Sci. Technol. A 39, 012410 (2021) https://doi.org/10.1116/6.0000655

Abstract

View articletitled, Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2

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Surface ligand removal in atomic layer deposition of GaN using triethylgallium

In Special Collection: Atomic Layer Deposition (ALD)

Petro Deminskyi; Chih-Wei Hsu; Babak Bakhit; Polla Rouf; Henrik Pedersen

J. Vac. Sci. Technol. A 39, 012411 (2021) https://doi.org/10.1116/6.0000752

Abstract

View articletitled, Surface ligand removal in atomic layer deposition of GaN using triethylgallium

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Atomic Layer Etching (ALE)

Vacuum ultraviolet enhanced atomic layer etching of ruthenium films

In Special Collection: Atomic Layer Etching (ALE)

Brennan M. Coffey; Himamshu C. Nallan; John G. Ekerdt

J. Vac. Sci. Technol. A 39, 012601 (2021) https://doi.org/10.1116/6.0000742

Abstract

View articletitled, Vacuum ultraviolet enhanced atomic layer etching of ruthenium films

Supplementary Material

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CHORUS

Plasma Science and Technology

Influence of nitrogen gas flow ratio on gallium nitride film growth using high-density convergent plasma sputtering device at room temperature

T. Motomura; T. Tabaru; Y. Fujio; T. Okuyama

J. Vac. Sci. Technol. A 39, 013001 (2021) https://doi.org/10.1116/6.0000677

Abstract

View articletitled, Influence of nitrogen gas flow ratio on gallium nitride film growth using high-density convergent plasma sputtering device at room temperature

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Work function performance of a C12A7 electride surface exposed to low pressure low temperature hydrogen plasmas

A. Heiler; K. Waetzig; M. Tajmar; R. Friedl; R. Nocentini; U. Fantz

J. Vac. Sci. Technol. A 39, 013002 (2021) https://doi.org/10.1116/6.0000749

Abstract

View articletitled, Work function performance of a C12A7 electride surface exposed to low pressure low temperature hydrogen plasmas

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Surfaces and Interfaces

Origin of area selective plasma enhanced chemical vapor deposition of microcrystalline silicon

In Special Collection: Special Topic Collection on Area Selective Deposition

Ghewa Akiki; Mathieu Frégnaux; Ileana Florea; Pavel Bulkin; Dmitri Daineka; Sergej Filonovich; Muriel Bouttemy; Erik V. Johnson

J. Vac. Sci. Technol. A 39, 013201 (2021) https://doi.org/10.1116/6.0000653

Abstract

View articletitled, Origin of area selective plasma enhanced chemical vapor deposition of microcrystalline silicon

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Accuracy limitations for composition analysis by XPS using relative peak intensities: LiF as an example

In Special Collection: Celebrating 40 Years of the AVS Peter Mark Award

Christopher Richard Brundle; Bruce Vincent Crist; Paul S. Bagus

J. Vac. Sci. Technol. A 39, 013202 (2021) https://doi.org/10.1116/6.0000674

Abstract

View articletitled, Accuracy limitations for composition analysis by XPS using relative peak intensities: LiF as an example

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High temperature isotropic and anisotropic etching of silicon carbide using forming gas

C. D. Frye; Devin Funaro; A. M. Conway; D. L. Hall; P. V. Grivickas; M. Bora; L. F. Voss

J. Vac. Sci. Technol. A 39, 013203 (2021) https://doi.org/10.1116/6.0000533

Abstract

View articletitled, High temperature isotropic and anisotropic etching of silicon carbide using forming gas

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Practical guides for x-ray photoelectron spectroscopy (XPS): Interpreting the carbon 1s spectrum

In Special Collection: Special Topic Collection: Reproducibility Challenges and Solutions

Thomas R. Gengenbach; George H. Major; Matthew R. Linford; Christopher D. Easton

J. Vac. Sci. Technol. A 39, 013204 (2021) https://doi.org/10.1116/6.0000682

Abstract

View articletitled, Practical guides for x-ray photoelectron spectroscopy (XPS): Interpreting the carbon 1s spectrum

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Thin Films

Mitigating residual stress of high temperature CVD diamond films on vanadium carbide coated steel

Rômulo Luís Martins; Djoille Denner Damm; Evaldo José Corat; Vladimir Jesus Trava-Airoldi; Danilo Maciel Barquete

J. Vac. Sci. Technol. A 39, 013401 (2021) https://doi.org/10.1116/6.0000607

Abstract

View articletitled, Mitigating residual stress of high temperature CVD diamond films on vanadium carbide coated steel

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Superconformal growth and trench filling using a consumable inhibitor in chemical vapor deposition of Hf_1−xV_xB_y

Kinsey L. Canova; Zhejun V. Zhang; Gregory S. Girolami; John R. Abelson

J. Vac. Sci. Technol. A 39, 013402 (2021) https://doi.org/10.1116/6.0000640

Abstract

View articletitled, Superconformal growth and trench filling using a consumable inhibitor in chemical vapor deposition of Hf1−xVxBy

Supplementary Material

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CHORUS

Modification of copper and copper oxide surface states due to isopropyl alcohol treatment toward area-selective processes

In Special Collection: Special Topic Collection on Area Selective Deposition

Takezo Mawaki; Akinobu Teramoto; Katsutoshi Ishii; Yoshinobu Shiba; Rihito Kuroda; Tomoyuki Suwa; Shuji Azumo; Akira Shimizu; Kota Umezawa; Yasuyuki Shirai; Shigetoshi Sugawa

J. Vac. Sci. Technol. A 39, 013403 (2021) https://doi.org/10.1116/6.0000618

Abstract

View articletitled, Modification of copper and copper oxide surface states due to isopropyl alcohol treatment toward area-selective processes

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Application of templated vapor-liquid-solid growth to heteroepitaxy of InP on Si

Olivia D. Schneble; Anica N. Neumann; John S. Mangum; Andrew G. Norman; Emily L. Warren; Jeramy D. Zimmerman

J. Vac. Sci. Technol. A 39, 013404 (2021) https://doi.org/10.1116/6.0000728

Abstract

View articletitled, Application of templated vapor-liquid-solid growth to heteroepitaxy of InP on Si

Supplementary Material

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Rhombohedral boron nitride epitaxy on ZrB₂

Laurent Souqui; Justinas Palisaitis; Naureen Ghafoor; Henrik Pedersen; Hans Högberg

J. Vac. Sci. Technol. A 39, 013405 (2021) https://doi.org/10.1116/6.0000571

Abstract

View articletitled, Rhombohedral boron nitride epitaxy on ZrB2

Supplementary Material

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Effect of probe geometry during measurement of >100 A Ga₂O₃ vertical rectifiers

In Special Collection: Gallium Oxide Materials and Devices

Ribhu Sharma; Minghan Xian; Chaker Fares; Mark E. Law; Marko Tadjer; Karl D. Hobart; Fan Ren; Stephen J. Pearton

J. Vac. Sci. Technol. A 39, 013406 (2021) https://doi.org/10.1116/6.0000815

Abstract

View articletitled, Effect of probe geometry during measurement of >100 A Ga2O3 vertical rectifiers

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CHORUS

Area-selective aerosol jet fog deposition: Advancing large-area and sustainable fabrication

In Special Collection: Special Topic Collection on Area Selective Deposition

Kamesh Mullapudi; Nishit M. Murari; Ryan H. Mansergh; Douglas A. Keszler; John F. Conley, Jr.

J. Vac. Sci. Technol. A 39, 013407 (2021) https://doi.org/10.1116/6.0000642

Abstract

View articletitled, Area-selective aerosol jet fog deposition: Advancing large-area and sustainable fabrication

Supplementary Material

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CHORUS

Assessment of the (010) β-Ga₂O₃ surface and substrate specification

In Special Collection: Gallium Oxide Materials and Devices

Michael A. Mastro; Charles R. Eddy, Jr.; Marko J. Tadjer; Jennifer K. Hite; Jihyun Kim; Stephen J. Pearton

J. Vac. Sci. Technol. A 39, 013408 (2021) https://doi.org/10.1116/6.0000725

Abstract

View articletitled, Assessment of the (010) β-Ga2O3 surface and substrate specification

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CHORUS

Physical vapor deposition of the halide perovskite CsBi₂Br₇

In Special Collection: Celebrating 40 Years of the AVS Peter Mark Award

Minh N. Tran; Iver J. Cleveland; Eray S. Aydil

J. Vac. Sci. Technol. A 39, 013409 (2021) https://doi.org/10.1116/6.0000604

Abstract

View articletitled, Physical vapor deposition of the halide perovskite CsBi2Br7

Supplementary Material

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Errata

Errata: “Atomic layer etching of metals with anisotropy, specificity, and selectivity” [J. Vac. Sci. Technol. A 38, 043005 (2020)]

Xia Sang; Yantao Xia; Philippe Sautet; Jane P. Chang

J. Vac. Sci. Technol. A 39, 017001 (2021) https://doi.org/10.1116/6.0000759

Extract

View articletitled, Errata: “Atomic layer etching of metals with anisotropy, specificity, and selectivity” [J. Vac. Sci. Technol. A 38, 043005 (2020)]

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Errata: ‘‘Patterning nickel for extreme ultraviolet lithography mask application I. Atomic layer etch processing’’ [J. Vac. Sci. Technol. A 38, 042603 (2020)]

Xia Sang; Ernest Chen; Jane P. Chang

J. Vac. Sci. Technol. A 39, 017002 (2021) https://doi.org/10.1116/6.0000758

Extract

View articletitled, Errata: ‘‘Patterning nickel for extreme ultraviolet lithography mask application I. Atomic layer etch processing’’ [J. Vac. Sci. Technol. A 38, 042603 (2020)]

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Erratum: “Practical guides for x-ray photoelectron spectroscopy: First steps in planning, conducting, and reporting XPS measurements” [J. Vac. Sci. Technol. A 37, 031401 (2019)]

Donald R. Baer; Kateryna Artyushkova; Christopher Richard Brundle; James E. Castle; Mark H. Engelhard; Karen J. Gaskell; John T. Grant; Richard T. Haasch; Matthew R. Linford; Cedric J. Powell; Alexander G. Shard; Peter M. A. Sherwood; Vincent S. Smentkowski

J. Vac. Sci. Technol. A 39, 017003 (2021) https://doi.org/10.1116/6.0000822

Extract

View articletitled, Erratum: “Practical guides for x-ray photoelectron spectroscopy: First steps in planning, conducting, and reporting XPS measurements” [J. Vac. Sci. Technol. A 37, 031401 (2019)]

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Issues

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Letters

Review Articles

Perspectives

Tutorials

ARTICLES

2-D Materials

Atomic Layer Deposition (ALD)

Atomic Layer Etching (ALE)

Plasma Science and Technology

Surfaces and Interfaces

Thin Films

Errata

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