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Volume 35, Issue 5
September 2017
Issue Cover
All Issues
ISSN 0734-2101
EISSN 1520-8559

Letters

Controlling the boron-to-titanium ratio in magnetron-sputter-deposited TiBx thin films
Ivan Petrov; Allen Hall; Antonio B. Mei; Nils Nedfors; Igor Zhirkov; Johanna Rosen; Amber Reed; Brandon Howe; Grzegorz Greczynski; Jens Birch; Lars Hultman; J. E. Greene
J. Vac. Sci. Technol. A 35, 050601 (2017) https://doi.org/10.1116/1.4982649
View articletitled, Controlling the boron-to-titanium ratio in magnetron-sputter-deposited TiB<sub>x</sub> thin films
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Review Articles

Review Article: Unraveling synergistic effects in plasma-surface processes by means of beam experiments
Achim von Keudell; Carles Corbella
J. Vac. Sci. Technol. A 35, 050801 (2017) https://doi.org/10.1116/1.4983275
View articletitled, Review Article: Unraveling synergistic effects in plasma-surface processes by means of beam experiments
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Special Issue for Harold Winters Tribute

Editorial
Early example of an interdisciplinary approach in industry: Harold F. Winters's contributions
Eric Kay; John W. Coburn
J. Vac. Sci. Technol. A 35, 05C101 (2017) https://doi.org/10.1116/1.4989563
View articletitled, Early example of an interdisciplinary approach in industry: Harold F. Winters's contributions
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Review Articles
Review Article: Dynamics of methane dissociation on transition metals
Alan C. Luntz; Rainer D. Beck
J. Vac. Sci. Technol. A 35, 05C201 (2017) https://doi.org/10.1116/1.4980145
View articletitled, Review Article: Dynamics of methane dissociation on transition metals
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Review Article: Reactions of fluorine atoms with silicon, revisited, again
Vincent M. Donnelly
J. Vac. Sci. Technol. A 35, 05C202 (2017) https://doi.org/10.1116/1.4983922
View articletitled, Review Article: Reactions of fluorine atoms with silicon, revisited, again
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CHORUS
Review Article: Plasma–surface interactions at the atomic scale for patterning metals
Nicholas D. Altieri; Jack Kun-Chieh Chen; Luke Minardi; Jane P. Chang
J. Vac. Sci. Technol. A 35, 05C203 (2017) https://doi.org/10.1116/1.4993602
View articletitled, Review Article: Plasma–surface interactions at the atomic scale for patterning metals
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Review Article: Tracing the recorded history of thin-film sputter deposition: From the 1800s to 2017 Featured
J. E. Greene
J. Vac. Sci. Technol. A 35, 05C204 (2017) https://doi.org/10.1116/1.4998940
View articletitled, Review Article: Tracing the recorded history of thin-film sputter deposition: From the 1800s to 2017
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Articles
Role of neutral transport in aspect ratio dependent plasma etching of three-dimensional features
Chad M. Huard; Yiting Zhang; Saravanapriyan Sriraman; Alex Paterson; Mark J. Kushner
J. Vac. Sci. Technol. A 35, 05C301 (2017) https://doi.org/10.1116/1.4973953
View articletitled, Role of neutral transport in aspect ratio dependent plasma etching of three-dimensional features
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CHORUS
Predicting synergy in atomic layer etching Featured
Keren J. Kanarik; Samantha Tan; Wenbing Yang; Taeseung Kim; Thorsten Lill; Alexander Kabansky; Eric A. Hudson; Tomihito Ohba; Kazuo Nojiri; Jengyi Yu; Rich Wise; Ivan L. Berry; Yang Pan; Jeffrey Marks; Richard A. Gottscho
J. Vac. Sci. Technol. A 35, 05C302 (2017) https://doi.org/10.1116/1.4979019
View articletitled, Predicting synergy in atomic layer etching
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Effects of hydrogen ion irradiation on zinc oxide etching
Hu Li; Kazuhiro Karahashi; Pascal Friederich; Karin Fink; Masanaga Fukasawa; Akiko Hirata; Kazunori Nagahata; Tetsuya Tatsumi; Wolfgang Wenzel; Satoshi Hamaguchi
J. Vac. Sci. Technol. A 35, 05C303 (2017) https://doi.org/10.1116/1.4982715
View articletitled, Effects of hydrogen ion irradiation on zinc oxide etching
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Directional etch of magnetic and noble metals. I. Role of surface oxidation states
Jack Kun-Chieh Chen; Nicholas D. Altieri; Taeseung Kim; Thorsten Lill; Meihua Shen; Jane P. Chang
J. Vac. Sci. Technol. A 35, 05C304 (2017) https://doi.org/10.1116/1.4983829
View articletitled, Directional etch of magnetic and noble metals. I. Role of surface oxidation states
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Directional etch of magnetic and noble metals. II. Organic chemical vapor etch
Jack Kun-Chieh Chen; Nicholas D. Altieri; Taeseung Kim; Ernest Chen; Thorsten Lill; Meihua Shen; Jane P. Chang
J. Vac. Sci. Technol. A 35, 05C305 (2017) https://doi.org/10.1116/1.4983830
View articletitled, Directional etch of magnetic and noble metals. II. Organic chemical vapor etch
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Effects of ultraviolet and vacuum ultraviolet synchrotron radiation on organic underlayers to modulate line-edge roughness of fine-pitch poly-silicon patterns
Hiroyuki Miyazoe; Sebastian U. Engelmann; Michael A. Guillorn; Dongfei Pei; Weiyi Li; Jason L. Lauer; J. Leon Shohet; Nicholas C. M. Fuller
J. Vac. Sci. Technol. A 35, 05C306 (2017) https://doi.org/10.1116/1.4985541
View articletitled, Effects of ultraviolet and vacuum ultraviolet synchrotron radiation on organic underlayers to modulate line-edge roughness of fine-pitch poly-silicon patterns
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CHORUS
Atomic hydrogen induced defect kinetics in amorphous silicon Editor’s Pick
Floran J. J. Peeters; Jie Zheng; Igor M. P. Aarts; Andrew C. R. Pipino; Wilhelmus M. M. Kessels; Mauritius C. M. van de Sanden
J. Vac. Sci. Technol. A 35, 05C307 (2017) https://doi.org/10.1116/1.4987152
View articletitled, Atomic hydrogen induced defect kinetics in amorphous silicon
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Energy partitioning and its influence on surface scatter coefficients within fluorinated inductively coupled plasmas Editor’s Pick
Angela R. Hanna; Michael F. Cuddy; Ellen R. Fisher
J. Vac. Sci. Technol. A 35, 05C308 (2017) https://doi.org/10.1116/1.4990682
View articletitled, Energy partitioning and its influence on surface scatter coefficients within fluorinated inductively coupled plasmas
Supplementary Material
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CHORUS
Effects of phosphorus and alkyl substituents on C–H, C–C, and C–O bond rupture within carboxylic acids on Ru(0001)
SiWei A. Chang; Vivek Vermani; David W. Flaherty
J. Vac. Sci. Technol. A 35, 05C309 (2017) https://doi.org/10.1116/1.4990685
View articletitled, Effects of phosphorus and alkyl substituents on C–H, C–C, and C–O bond rupture within carboxylic acids on Ru(0001)
Supplementary Material
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Quasiatomic layer etching of silicon nitride with independent control of directionality and selectivity
Sonam D. Sherpa; Peter L. G. Ventzek; Alok Ranjan
J. Vac. Sci. Technol. A 35, 05C310 (2017) https://doi.org/10.1116/1.4993133
View articletitled, Quasiatomic layer etching of silicon nitride with independent control of directionality and selectivity
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Effect of a dielectric layer on plasma uniformity in high frequency electronegative capacitive discharges
Emi Kawamura; De-Qi Wen; Michael A. Lieberman; Allan J. Lichtenberg
J. Vac. Sci. Technol. A 35, 05C311 (2017) https://doi.org/10.1116/1.4993595
View articletitled, Effect of a dielectric layer on plasma uniformity in high frequency electronegative capacitive discharges
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CHORUS
XeF2 etching of epitaxial Nb2N for lift-off or micromachining of III-N materials and devices
Brian P. Downey; D. Scott Katzer; Neeraj Nepal; Matthew T. Hardy; David J. Meyer
J. Vac. Sci. Technol. A 35, 05C312 (2017) https://doi.org/10.1116/1.4994400
View articletitled, XeF<sub>2</sub> etching of epitaxial Nb<sub>2</sub>N for lift-off or micromachining of III-N materials and devices
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CHORUS
Revisiting the growth mechanism of atomic layer deposition of Al2O3: A vibrational sum-frequency generation study Editor’s Pick
Vincent Vandalon; W. M. M. (Erwin) Kessels
J. Vac. Sci. Technol. A 35, 05C313 (2017) https://doi.org/10.1116/1.4993597
View articletitled, Revisiting the growth mechanism of atomic layer deposition of Al<sub>2</sub>O<sub>3</sub>: A vibrational sum-frequency generation study
Supplementary Material
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Cyclic Cl2/H2 quasi-atomic layer etching approach for TiN and TaN patterning using organic masks
Nathan Marchack; John M. Papalia; Sebastian Engelmann; Eric A. Joseph
J. Vac. Sci. Technol. A 35, 05C314 (2017) https://doi.org/10.1116/1.4995413
View articletitled, Cyclic Cl<sub>2</sub>/H<sub>2</sub> quasi-atomic layer etching approach for TiN and TaN patterning using organic masks
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Plasma–surface interaction at atmospheric pressure: A case study of polystyrene etching and surface modification by Ar/O2 plasma jet Editor’s Pick
Pingshan Luan; Andrew J. Knoll; Peter J. Bruggeman; Gottlieb S. Oehrlein
J. Vac. Sci. Technol. A 35, 05C315 (2017) https://doi.org/10.1116/1.5000691
View articletitled, Plasma–surface interaction at atmospheric pressure: A case study of polystyrene etching and surface modification by Ar/O<sub>2</sub> plasma jet
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CHORUS

 

Surface passivation approaches for silicon, germanium, and III–V semiconductors
Roel J. Theeuwes, Wilhelmus M. M. Kessels, et al.
Atomic layer deposition of transition metal chalcogenide TaSx using Ta[N(CH3)2]3[NC(CH3)3] precursor and H2S plasma
J. H. Deijkers, H. Thepass, et al.
Low-resistivity molybdenum obtained by atomic layer deposition
Kees van der Zouw, Bernhard Y. van der Wel, et al.
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