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Issues
May 2017
ISSN 0734-2101
EISSN 1520-8559
Plasma Science and Technology
Quasiatomic layer etching of silicon oxide selective to silicon nitride in topographic structures using fluorocarbon plasmas
J. Vac. Sci. Technol. A 35, 031301 (2017)
https://doi.org/10.1116/1.4978224
Insights to scaling remote plasma sources sustained in NF3 mixtures
Shuo Huang; Vladimir Volynets; James R. Hamilton; Sangheon Lee; In-Cheol Song; Siqing Lu; Jonathan Tennyson; Mark J. Kushner
J. Vac. Sci. Technol. A 35, 031302 (2017)
https://doi.org/10.1116/1.4978551
Y2O3 wall interactions in Cl2 etching and NF3 cleaning plasmas
J. Vac. Sci. Technol. A 35, 031303 (2017)
https://doi.org/10.1116/1.4978552
Ion beam assisted organic chemical vapor etch of magnetic thin films
J. Vac. Sci. Technol. A 35, 031304 (2017)
https://doi.org/10.1116/1.4978553
Melt ejection from copper target in air in the presence of magnetic field using nanosecond pulsed laser ablation
J. Vac. Sci. Technol. A 35, 031305 (2017)
https://doi.org/10.1116/1.4979663
Atomic layer etching of 3D structures in silicon: Self-limiting and nonideal reactions
Chad M. Huard; Yiting Zhang; Saravanapriyan Sriraman; Alex Paterson; Keren J. Kanarik; Mark J. Kushner
J. Vac. Sci. Technol. A 35, 031306 (2017)
https://doi.org/10.1116/1.4979661
Experimental investigation of SF6–O2 plasma for advancement of the anisotropic Si etch process
J. Vac. Sci. Technol. A 35, 031307 (2017)
https://doi.org/10.1116/1.4981785
Thin Films
Electronic and optical properties of rocksalt-phase tungsten nitride (B1-WN)
Chrysoula Metaxa; Brian D. Ozsdolay; Triantafillia Zorba; Konstantinos Paraskevopoulos; Daniel Gall; Panos Patsalas
J. Vac. Sci. Technol. A 35, 031501 (2017)
https://doi.org/10.1116/1.4978030
Growth of lead thin films on silicon and niobium substrates by sputtering technique
Francisco Gontad; Antonella Lorusso; Massimo Di Giulio; Fredrik Eriksson; Esteban Broitman; Alessio Perrone
J. Vac. Sci. Technol. A 35, 031502 (2017)
https://doi.org/10.1116/1.4978040
Reactive high-power impulse magnetron sputtering of ZrO2 films with gradient ZrOx interlayers on pretreated steel substrates
J. Vac. Sci. Technol. A 35, 031503 (2017)
https://doi.org/10.1116/1.4978037
Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
Neeraj Nepal; Virginia R. Anderson; Scooter D. Johnson; Brian P. Downey; David J. Meyer; Alexander DeMasi; Zachary R. Robinson; Karl F. Ludwig; Charles R. Eddy, Jr.
J. Vac. Sci. Technol. A 35, 031504 (2017)
https://doi.org/10.1116/1.4978026
Properties of sputtered ZnS and ZnS:A (A = Er, Yb) films grown at low substrate temperatures
Carlos A. Ortiz; Astrid L. Giraldo-Betancur; Martín A. Hernández-Landaverde; Marius Ramírez-Cardona; Arturo Mendoza-Galván; Sergio Jiménez-Sandoval
J. Vac. Sci. Technol. A 35, 031505 (2017)
https://doi.org/10.1116/1.4978946
Fabrication of single-phase SnS film by H2 annealing of amorphous SnSx prepared by atomic layer deposition
J. Vac. Sci. Technol. A 35, 031506 (2017)
https://doi.org/10.1116/1.4978892
Metalorganic chemical vapor deposition-regrown Ga-rich InGaP films on SiGe virtual substrates for Si-based III-V optoelectronic device applications
TaeWan Kim; Bing Wang; Cong Wang; David A. Kohen; Jeong Woo Hwang; Jae Cheol Shin; Sang-Woo Kang; Jürgen Michel
J. Vac. Sci. Technol. A 35, 031507 (2017)
https://doi.org/10.1116/1.4979272
Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
Virginia R. Anderson; Neeraj Nepal; Scooter D. Johnson; Zachary R. Robinson; Anindya Nath; Alexander C. Kozen; Syed B. Qadri; Alexander DeMasi; Jennifer K. Hite; Karl F. Ludwig, Jr.; Charles R. Eddy, Jr.
J. Vac. Sci. Technol. A 35, 031508 (2017)
https://doi.org/10.1116/1.4979007
Correcting defects in area selective molecular layer deposition
J. Vac. Sci. Technol. A 35, 031509 (2017)
https://doi.org/10.1116/1.4980049
Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
Hanearl Jung; Il-Kwon Oh; Seungmin Yeo; Hyungjun Kim; Su Jeong Lee; Yun Cheol Kim; Jae-Min Myoung; Soo-Hyun Kim; Jun Hyung Lim; Sunhee Lee
J. Vac. Sci. Technol. A 35, 031510 (2017)
https://doi.org/10.1116/1.4982224
Vacuum Science and Technology
Shape-memory alloy rings as tight couplers between ultrahigh-vacuum pipes: Design and experimental assessment
J. Vac. Sci. Technol. A 35, 031601 (2017)
https://doi.org/10.1116/1.4978044
Temperature and wall coating dependence of alkali vapor transport speed in micron-scale capillaries
Matthieu Giraud-Carrier; Trevor Decker; Joshua McClellan; Linsey Bennett; Aaron Hawkins; Jennifer Black; Soren Almquist; Holger Schmidt
J. Vac. Sci. Technol. A 35, 031602 (2017)
https://doi.org/10.1116/1.4978888
Special Issue: AVS 63
Increased drift carrier lifetime in semiconducting boron carbides deposited by plasma enhanced chemical vapor deposition from carboranes and benzene
George Glenn Peterson; Elena Echeverria; Bin Dong; Joseph P. Silva; Ethiyal R. Wilson; Jeffry A. Kelber; Michael Nastasi; Peter A. Dowben
J. Vac. Sci. Technol. A 35, 03E101 (2017)
https://doi.org/10.1116/1.4973338
Step-type and step-density influences on CO adsorption probed by reflection absorption infrared spectroscopy using a curved Pt(1 1 1) surface
Anton J. Walsh; Richard van Lent; Sabine V. Auras; Michael A. Gleeson; Otto T. Berg; Ludo B. F. Juurlink
J. Vac. Sci. Technol. A 35, 03E102 (2017)
https://doi.org/10.1116/1.4976617
Achievements and problems in the first commissioning of superKEKB vacuum system
Yusuke Suetsugu; Kyo Shibata; Takuya Ishibashi; Hitoshi Fukuma; Makoto Tobiyama; John Flanagan; Emy Mulyani; Mitsuru Shirai; Shinji Terui; Ken-ichi Kanazawa; Hiromi Hisamatsu
J. Vac. Sci. Technol. A 35, 03E103 (2017)
https://doi.org/10.1116/1.4977764
Detailed analysis of impact collision ion scattering spectroscopy of bismuth selenide
J. Vac. Sci. Technol. A 35, 03E104 (2017)
https://doi.org/10.1116/1.4978253
Impact of atmospheric pressure nonequilibrium plasma discharge on polymer surface metrology
J. Vac. Sci. Technol. A 35, 03E105 (2017)
https://doi.org/10.1116/1.4978254
Vacuum system of positron damping ring for SuperKEKB
Kyo Shibata; Yusuke Suetsugu; Takuya Ishibashi; Mitsuru Shirai; Shinji Terui; Ken-ichi Kanazawa; Hiromi Hisamatsu
J. Vac. Sci. Technol. A 35, 03E106 (2017)
https://doi.org/10.1116/1.4979009
Surface degradation of uranium tetrafluoride
J. Vac. Sci. Technol. A 35, 03E108 (2017)
https://doi.org/10.1116/1.4979540
Atomic layer deposited ultrathin metal nitride barrier layers for ruthenium interconnect applications
Sonal Dey; Kai-Hung Yu; Steven Consiglio; Kandabara Tapily; Takahiro Hakamata; Cory S. Wajda; Gert J. Leusink; Jean Jordan-Sweet; Christian Lavoie; David Muir; Beatriz Moreno; Alain C. Diebold
J. Vac. Sci. Technol. A 35, 03E109 (2017)
https://doi.org/10.1116/1.4979709
Reaction of aqueous ammonium sulfide on SiGe 25%
J. Vac. Sci. Technol. A 35, 03E110 (2017)
https://doi.org/10.1116/1.4982223
Surface passivation of aluminum hydride particles via atomic layer deposition
J. Vac. Sci. Technol. A 35, 03E111 (2017)
https://doi.org/10.1116/1.4982661
High performance flexible copper indium gallium selenide core–shell nanorod array photodetectors
J. Vac. Sci. Technol. A 35, 03E112 (2017)
https://doi.org/10.1116/1.4982681
Multiscale approach for simulation of silicon etching using SF6/C4F8 Bosch process
J. Vac. Sci. Technol. A 35, 03E113 (2017)
https://doi.org/10.1116/1.4982687
Plasma source development for fusion-relevant material testing
John B. O. Caughman; Richard H. Goulding; Theodore M. Biewer; Timothy S. Bigelow; Ian H. Campbell; Juan Caneses; Stephanie J. Diem; Andy Fadnek; Dan T. Fehling; Ralph C. Isler; Elijah H. Martin; Chad M. Parish; Juergen Rapp; Kun Wang; Clyde J. Beers; David Donovan; Nischal Kafle; Holly B. Ray; Guinevere C. Shaw; Melissa A. Showers
J. Vac. Sci. Technol. A 35, 03E114 (2017)
https://doi.org/10.1116/1.4982664
Time-resolved photoemission studies of exciton dissociation in organic photovoltaics
J. Vac. Sci. Technol. A 35, 03E115 (2017)
https://doi.org/10.1116/1.4982800
Atomic layer deposition of transition metal chalcogenide TaSx using Ta[N(CH3)2]3[NC(CH3)3] precursor and H2S plasma
J. H. Deijkers, H. Thepass, et al.
Low-resistivity molybdenum obtained by atomic layer deposition
Kees van der Zouw, Bernhard Y. van der Wel, et al.