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Vapor deposition of copper(I) bromide films via a two-step conversion process
Room temperature atomic layer deposition of TiO2 on gold nanoparticles
Room temperature TiO2 atomic layer deposition on collagen membrane from a titanium alkylamide precursor
Review Article
Special Issue on Atomic Layer Deposition (ALD)
Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
J. Vac. Sci. Technol. A 35, 01A101 (2017)
https://doi.org/10.1116/1.4964889
Anomalously high alumina atomic layer deposition growth per cycle during trimethylaluminum under-dosing conditions
J. Vac. Sci. Technol. A 35, 01B101 (2017)
https://doi.org/10.1116/1.4963368
Mechanistic modeling study of atomic layer deposition process optimization in a fluidized bed reactor
J. Vac. Sci. Technol. A 35, 01B102 (2017)
https://doi.org/10.1116/1.4964848
Investigating routes toward atomic layer deposition of silicon carbide: Ab initio screening of potential silicon and carbon precursors
J. Vac. Sci. Technol. A 35, 01B103 (2017)
https://doi.org/10.1116/1.4964890
Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps
J. Vac. Sci. Technol. A 35, 01B104 (2017)
https://doi.org/10.1116/1.4965966
Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition: Growth and mechanical properties
J. Vac. Sci. Technol. A 35, 01B105 (2017)
https://doi.org/10.1116/1.4966198
Tunable optical properties in atomic layer deposition grown ZnO thin films
J. Vac. Sci. Technol. A 35, 01B108 (2017)
https://doi.org/10.1116/1.4967296
Vapor deposition of copper(I) bromide films via a two-step conversion process
J. Vac. Sci. Technol. A 35, 01B109 (2017)
https://doi.org/10.1116/1.4967726
Plasma enhanced atomic layer deposition of zinc sulfide thin films
J. Vac. Sci. Technol. A 35, 01B111 (2017)
https://doi.org/10.1116/1.4967724
Potential gold(I) precursors evaluated for atomic layer deposition
J. Vac. Sci. Technol. A 35, 01B112 (2017)
https://doi.org/10.1116/1.4968193
Ab initio study of the trimethylaluminum atomic layer deposition process on carbon nanotubes—An alternative initial step
J. Vac. Sci. Technol. A 35, 01B113 (2017)
https://doi.org/10.1116/1.4968196
As2S3 thin films deposited by atomic layer deposition
J. Vac. Sci. Technol. A 35, 01B114 (2017)
https://doi.org/10.1116/1.4968202
Simulation of atomic layer deposition on nanoparticle agglomerates
J. Vac. Sci. Technol. A 35, 01B116 (2017)
https://doi.org/10.1116/1.4968548
Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
J. Vac. Sci. Technol. A 35, 01B117 (2017)
https://doi.org/10.1116/1.4971173
Experimental and simulation approach for process optimization of atomic layer deposited thin films in high aspect ratio 3D structures
J. Vac. Sci. Technol. A 35, 01B118 (2017)
https://doi.org/10.1116/1.4971196
Temperature dependence of the sticking coefficients of bis-diethyl aminosilane and trimethylaluminum in atomic layer deposition
J. Vac. Sci. Technol. A 35, 01B119 (2017)
https://doi.org/10.1116/1.4971197
Fabrication of nanopower generators using thin atomic layer deposited films
J. Vac. Sci. Technol. A 35, 01B120 (2017)
https://doi.org/10.1116/1.4971403
Room temperature atomic layer deposition of TiO2 on gold nanoparticles
J. Vac. Sci. Technol. A 35, 01B121 (2017)
https://doi.org/10.1116/1.4971398
Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
J. Vac. Sci. Technol. A 35, 01B122 (2017)
https://doi.org/10.1116/1.4971399
Atomic layer deposited single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A
J. Vac. Sci. Technol. A 35, 01B123 (2017)
https://doi.org/10.1116/1.4971989
Activation of the dimers and tetramers of metal amidinate atomic layer deposition precursors upon adsorption on silicon oxide surfaces
J. Vac. Sci. Technol. A 35, 01B124 (2017)
https://doi.org/10.1116/1.4971990
Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
J. Vac. Sci. Technol. A 35, 01B125 (2017)
https://doi.org/10.1116/1.4971991
Microstructure-dependent thermoelectric properties of polycrystalline InGaO3(ZnO)2 superlattice films
J. Vac. Sci. Technol. A 35, 01B126 (2017)
https://doi.org/10.1116/1.4972207
Deposition temperature dependence and long-term stability of the conductivity of undoped ZnO grown by atomic layer deposition
J. Vac. Sci. Technol. A 35, 01B127 (2017)
https://doi.org/10.1116/1.4972466
Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
J. Vac. Sci. Technol. A 35, 01B128 (2017)
https://doi.org/10.1116/1.4972469
Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
J. Vac. Sci. Technol. A 35, 01B129 (2017)
https://doi.org/10.1116/1.4972208
Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
J. Vac. Sci. Technol. A 35, 01B130 (2017)
https://doi.org/10.1116/1.4972210
Low-temperature-atomic-layer-deposition of SiO2 using various organic precursors
J. Vac. Sci. Technol. A 35, 01B131 (2017)
https://doi.org/10.1116/1.4972211
Enhanced process and composition control for atomic layer deposition with lithium trimethylsilanolate
J. Vac. Sci. Technol. A 35, 01B133 (2017)
https://doi.org/10.1116/1.4972209
Room temperature TiO2 atomic layer deposition on collagen membrane from a titanium alkylamide precursor
J. Vac. Sci. Technol. A 35, 01B134 (2017)
https://doi.org/10.1116/1.4972245
In-gap states in titanium dioxide and oxynitride atomic layer deposited films
J. Vac. Sci. Technol. A 35, 01B135 (2017)
https://doi.org/10.1116/1.4972247
Molecular layer deposition using cyclic azasilanes, maleic anhydride, trimethylaluminum, and water
J. Vac. Sci. Technol. A 35, 01B136 (2017)
https://doi.org/10.1116/1.4972418
Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
J. Vac. Sci. Technol. A 35, 01B137 (2017)
https://doi.org/10.1116/1.4972554
Reactant utilization in CVD and ALD chambers
J. Vac. Sci. Technol. A 35, 01B138 (2017)
https://doi.org/10.1116/1.4972773
Atomic layer deposition of h-BN(0001) on RuO2(110)/Ru(0001)
J. Vac. Sci. Technol. A 35, 01B139 (2017)
https://doi.org/10.1116/1.4972784
Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
J. Vac. Sci. Technol. A 35, 01B141 (2017)
https://doi.org/10.1116/1.4972776
Growth of aluminum oxide on silicon carbide with an atomically sharp interface
J. Vac. Sci. Technol. A 35, 01B142 (2017)
https://doi.org/10.1116/1.4972774
Plasma-enhanced atomic layer deposition of superconducting niobium nitride
J. Vac. Sci. Technol. A 35, 01B143 (2017)
https://doi.org/10.1116/1.4972858
Stress modulation of titanium nitride thin films deposited using atomic layer deposition
J. Vac. Sci. Technol. A 35, 01B144 (2017)
https://doi.org/10.1116/1.4972859
Special Issue on Atomic Layer Etching (ALE)
Quasi-atomic layer etching of silicon nitride
J. Vac. Sci. Technol. A 35, 01A102 (2017)
https://doi.org/10.1116/1.4967236
Atomic layer etching of SiO2 by alternating an O2 plasma with fluorocarbon film deposition
J. Vac. Sci. Technol. A 35, 01A103 (2017)
https://doi.org/10.1116/1.4971171
Atomic fluorine densities in electron beam generated plasmas: A high ion to radical ratio source for etching with atomic level precision
J. Vac. Sci. Technol. A 35, 01A104 (2017)
https://doi.org/10.1116/1.4971416
Atomic layer etching in close-to-conventional plasma etch tools
J. Vac. Sci. Technol. A 35, 01A105 (2017)
https://doi.org/10.1116/1.4972393
