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Review Article

Review Article: Recommended reading list of early publications on atomic layer deposition—Outcome of the “Virtual Project on the History of ALD”

Esko Ahvenniemi; Andrew R. Akbashev; Saima Ali; Mikhael Bechelany; Maria Berdova; Stefan Boyadjiev; David C. Cameron; Rong Chen; Mikhail Chubarov; Veronique Cremers; Anjana Devi; Viktor Drozd; Liliya Elnikova; Gloria Gottardi; Kestutis Grigoras; Dennis M. Hausmann; Cheol Seong Hwang; Shih-Hui Jen; Tanja Kallio; Jaana Kanervo; Ivan Khmelnitskiy; Do Han Kim; Lev Klibanov; Yury Koshtyal; A. Outi I. Krause; Jakob Kuhs; Irina Kärkkänen; Marja-Leena Kääriäinen; Tommi Kääriäinen; Luca Lamagna; Adam A. Łapicki; Markku Leskelä; Harri Lipsanen; Jussi Lyytinen; Anatoly Malkov; Anatoly Malygin; Abdelkader Mennad; Christian Militzer; Jyrki Molarius; Małgorzata Norek; Çağla Özgit-Akgün; Mikhail Panov; Henrik Pedersen; Fabien Piallat; Georgi Popov; Riikka L. Puurunen; Geert Rampelberg; Robin H. A. Ras; Erwan Rauwel; Fred Roozeboom; Timo Sajavaara; Hossein Salami; Hele Savin; Nathanaelle Schneider; Thomas E. Seidel; Jonas Sundqvist; Dmitry B. Suyatin; Tobias Törndahl; J. Ruud van Ommen; Claudia Wiemer; Oili M. E. Ylivaara; Oksana Yurkevich

J. Vac. Sci. Technol. A 35, 010801 (2017) https://doi.org/10.1116/1.4971389

Abstract

View articletitled, Review Article: Recommended reading list of early publications on atomic layer deposition—Outcome of the “Virtual Project on the History of ALD”

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Special Issue on Atomic Layer Deposition (ALD)

Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition

Hwanwoo Kim; Hyoseok Song; Changhee Shin; Kangsoo Kim; Woochool Jang; Hyunjung Kim; Seokyoon Shin; Hyeongtag Jeon

J. Vac. Sci. Technol. A 35, 01A101 (2017) https://doi.org/10.1116/1.4964889

Abstract

View articletitled, Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition

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Anomalously high alumina atomic layer deposition growth per cycle during trimethylaluminum under-dosing conditions

Hossein Salami; Andrew Poissant; Raymond A. Adomaitis

J. Vac. Sci. Technol. A 35, 01B101 (2017) https://doi.org/10.1116/1.4963368

Abstract

View articletitled, Anomalously high alumina atomic layer deposition growth per cycle during trimethylaluminum under-dosing conditions

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CHORUS

Mechanistic modeling study of atomic layer deposition process optimization in a fluidized bed reactor

Chen-Long Duan; Peng-Hui Zhu; Zhang Deng; Yun Li; Bin Shan; Hai-Sheng Fang; Guang Feng; Rong Chen

J. Vac. Sci. Technol. A 35, 01B102 (2017) https://doi.org/10.1116/1.4964848

Abstract

View articletitled, Mechanistic modeling study of atomic layer deposition process optimization in a fluidized bed reactor

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Investigating routes toward atomic layer deposition of silicon carbide: Ab initio screening of potential silicon and carbon precursors

Ekaterina A. Filatova; Dennis Hausmann; Simon D. Elliott

J. Vac. Sci. Technol. A 35, 01B103 (2017) https://doi.org/10.1116/1.4964890

Abstract

View articletitled, Investigating routes toward atomic layer deposition of silicon carbide: Ab initio screening of potential silicon and carbon precursors

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Selective deposition of Ta₂O₅ by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps

Rémi Vallat; Rémy Gassilloud; Brice Eychenne; Christophe Vallée

J. Vac. Sci. Technol. A 35, 01B104 (2017) https://doi.org/10.1116/1.4965966

Abstract

View articletitled, Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps

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Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition: Growth and mechanical properties

Oili M. E. Ylivaara; Lauri Kilpi; Xuwen Liu; Sakari Sintonen; Saima Ali; Mikko Laitinen; Jaakko Julin; Eero Haimi; Timo Sajavaara; Harri Lipsanen; Simo-Pekka Hannula; Helena Ronkainen; Riikka L. Puurunen

J. Vac. Sci. Technol. A 35, 01B105 (2017) https://doi.org/10.1116/1.4966198

Abstract

View articletitled, Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition: Growth and mechanical properties

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Effects of GaSb surface preparation on the characteristics of HfO₂/Al₂O₃/GaSb metal-oxide-semiconductor capacitors prepared by atomic layer deposition

Wei-Jen Hsueh; Cheng-Yu Chen; Chao-Min Chang; Jen-Inn Chyi; Mao-Lin Huang

J. Vac. Sci. Technol. A 35, 01B106 (2017) https://doi.org/10.1116/1.4967233

Abstract

View articletitled, Effects of GaSb surface preparation on the characteristics of HfO2/Al2O3/GaSb metal-oxide-semiconductor capacitors prepared by atomic layer deposition

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Deposition of an organic–inorganic hybrid material onto carbon fibers via the introduction of furfuryl alcohol into the atomic layer deposition process of titania and subsequent pyrolysis

Christian Militzer; Stefan Knohl; Volodymyr Dzhagan; Dietrich R. T. Zahn; Werner A. Goedel

J. Vac. Sci. Technol. A 35, 01B107 (2017) https://doi.org/10.1116/1.4965699

Abstract

View articletitled, Deposition of an organic–inorganic hybrid material onto carbon fibers via the introduction of furfuryl alcohol into the atomic layer deposition process of titania and subsequent pyrolysis

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Tunable optical properties in atomic layer deposition grown ZnO thin films

Dipayan Pal; Aakash Mathur; Ajaib Singh; Jaya Singhal; Amartya Sengupta; Surjendu Dutta; Stefan Zollner; Sudeshna Chattopadhyay

J. Vac. Sci. Technol. A 35, 01B108 (2017) https://doi.org/10.1116/1.4967296

Abstract

View articletitled, Tunable optical properties in atomic layer deposition grown ZnO thin films

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CHORUS

Vapor deposition of copper(I) bromide films via a two-step conversion process

Rachel Heasley; Christina M. Chang; Luke M. Davis; Kathy Liu; Roy G. Gordon

J. Vac. Sci. Technol. A 35, 01B109 (2017) https://doi.org/10.1116/1.4967726

Abstract

View articletitled, Vapor deposition of copper(I) bromide films via a two-step conversion process

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Characterization of Al₂O₃ and ZnO multilayer thin films deposited by low temperature thermal atomic layer deposition on transparent polyimide

Seung Hak Song; Myoung Youb Lee; Gyeong Beom Lee; Byoung-Ho Choi

J. Vac. Sci. Technol. A 35, 01B110 (2017) https://doi.org/10.1116/1.4967728

Abstract

View articletitled, Characterization of Al2O3 and ZnO multilayer thin films deposited by low temperature thermal atomic layer deposition on transparent polyimide

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Plasma enhanced atomic layer deposition of zinc sulfide thin films

Jakob Kuhs; Thomas Dobbelaere; Zeger Hens; Christophe Detavernier

J. Vac. Sci. Technol. A 35, 01B111 (2017) https://doi.org/10.1116/1.4967724

Abstract

View articletitled, Plasma enhanced atomic layer deposition of zinc sulfide thin films

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Potential gold(I) precursors evaluated for atomic layer deposition

Maarit Mäkelä; Timo Hatanpää; Mikko Ritala; Markku Leskelä; Kenichiro Mizohata; Kristoffer Meinander; Jyrki Räisänen

J. Vac. Sci. Technol. A 35, 01B112 (2017) https://doi.org/10.1116/1.4968193

Abstract

View articletitled, Potential gold(I) precursors evaluated for atomic layer deposition

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Ab initio study of the trimethylaluminum atomic layer deposition process on carbon nanotubes—An alternative initial step

Anja Förster; Christian Wagner; Jörg Schuster; Joachim Friedrich

J. Vac. Sci. Technol. A 35, 01B113 (2017) https://doi.org/10.1116/1.4968196

Abstract

View articletitled, Ab initio study of the trimethylaluminum atomic layer deposition process on carbon nanotubes—An alternative initial step

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As₂S₃ thin films deposited by atomic layer deposition

Elina Färm; Mikko J. Heikkilä; Marko Vehkamäki; Kenichiro Mizohata; Mikko Ritala; Markku Leskelä; Marianna Kemell

J. Vac. Sci. Technol. A 35, 01B114 (2017) https://doi.org/10.1116/1.4968202

Abstract

View articletitled, As2S3 thin films deposited by atomic layer deposition

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Monte Carlo simulations of atomic layer deposition on 3D large surface area structures: Required precursor exposure for pillar- versus hole-type structures

Véronique Cremers; Filip Geenen; Christophe Detavernier; Jolien Dendooven

J. Vac. Sci. Technol. A 35, 01B115 (2017) https://doi.org/10.1116/1.4968201

Abstract

View articletitled, Monte Carlo simulations of atomic layer deposition on 3D large surface area structures: Required precursor exposure for pillar- versus hole-type structures

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Simulation of atomic layer deposition on nanoparticle agglomerates

Wenjie Jin; Chris R. Kleijn; J. Ruud van Ommen

J. Vac. Sci. Technol. A 35, 01B116 (2017) https://doi.org/10.1116/1.4968548

Abstract

View articletitled, Simulation of atomic layer deposition on nanoparticle agglomerates

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Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources

Sebastian Franke; Matthias Baumkötter; Carsten Monka; Sebastian Raabe; Reinhard Caspary; Hans-Hermann Johannes; Wolfgang Kowalsky; Sebastian Beck; Annemarie Pucci; Hassan Gargouri

J. Vac. Sci. Technol. A 35, 01B117 (2017) https://doi.org/10.1116/1.4971173

Abstract

View articletitled, Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources

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Experimental and simulation approach for process optimization of atomic layer deposited thin films in high aspect ratio 3D structures

Matthias C. Schwille; Timo Schössler; Jonas Barth; Martin Knaut; Florian Schön; Arnim Höchst; Martin Oettel; Johann W. Bartha

J. Vac. Sci. Technol. A 35, 01B118 (2017) https://doi.org/10.1116/1.4971196

Abstract

View articletitled, Experimental and simulation approach for process optimization of atomic layer deposited thin films in high aspect ratio 3D structures

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Temperature dependence of the sticking coefficients of bis-diethyl aminosilane and trimethylaluminum in atomic layer deposition

Matthias C. Schwille; Timo Schössler; Florian Schön; Martin Oettel; Johann W. Bartha

J. Vac. Sci. Technol. A 35, 01B119 (2017) https://doi.org/10.1116/1.4971197

Abstract

View articletitled, Temperature dependence of the sticking coefficients of bis-diethyl aminosilane and trimethylaluminum in atomic layer deposition

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Fabrication of nanopower generators using thin atomic layer deposited films

Robert Parker Given; Kyle S. Wenger; Virginia D. Wheeler; Brian C. Utter; Giovanna Scarel

J. Vac. Sci. Technol. A 35, 01B120 (2017) https://doi.org/10.1116/1.4971403

Abstract

View articletitled, Fabrication of nanopower generators using thin atomic layer deposited films

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Room temperature atomic layer deposition of TiO₂ on gold nanoparticles

Ko Kikuchi; Masanori Miura; Kensaku Kanomata; Bashir Ahmmad; Shigeru Kubota; Fumihiko Hirose

J. Vac. Sci. Technol. A 35, 01B121 (2017) https://doi.org/10.1116/1.4971398

Abstract

View articletitled, Room temperature atomic layer deposition of TiO2 on gold nanoparticles

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Al₂O₃/SiO₂ nanolaminate for a gate oxide in a GaN-based MOS device

Daigo Kikuta (菊田大悟); Kenji Itoh (伊藤健治); Tetsuo Narita (成田哲生); Tomohiko Mori (森朋彦)

J. Vac. Sci. Technol. A 35, 01B122 (2017) https://doi.org/10.1116/1.4971399

Abstract

View articletitled, Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device

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Atomic layer deposited single-crystal hexagonal perovskite YAlO₃ epitaxially on GaAs(111)A

Lawrence Boyu Young; Chao-Kai Cheng; Guan-Jie Lu; Keng-Yung Lin; Yen-Hsun Lin; Hsien-Wen Wan; Mei-Yi Li; Ren-Fong Cai; Shen-Chuan Lo; Chia-Hung Hsu; Jueinai Kwo; Minghwei Hong

J. Vac. Sci. Technol. A 35, 01B123 (2017) https://doi.org/10.1116/1.4971989

Abstract

View articletitled, Atomic layer deposited single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A

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Activation of the dimers and tetramers of metal amidinate atomic layer deposition precursors upon adsorption on silicon oxide surfaces

Bo Chen; Yichen Duan; Yunxi Yao; Qiang Ma; Jason P. Coyle; Seán T. Barry; Andrew V. Teplyakov; Francisco Zaera

J. Vac. Sci. Technol. A 35, 01B124 (2017) https://doi.org/10.1116/1.4971990

Abstract

View articletitled, Activation of the dimers and tetramers of metal amidinate atomic layer deposition precursors upon adsorption on silicon oxide surfaces

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CHORUS

Localized defect states and charge trapping in atomic layer deposited-Al₂O₃ films

Karsten Henkel; Malgorzata Kot; Dieter Schmeißer

J. Vac. Sci. Technol. A 35, 01B125 (2017) https://doi.org/10.1116/1.4971991

Abstract

View articletitled, Localized defect states and charge trapping in atomic layer deposited-Al2O3 films

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Microstructure-dependent thermoelectric properties of polycrystalline InGaO₃(ZnO)₂ superlattice films

Sung Woon Cho; Seung Ki Baek; Da Eun Kim; Yunseok Kim; Hyung Koun Cho

J. Vac. Sci. Technol. A 35, 01B126 (2017) https://doi.org/10.1116/1.4972207

Abstract

View articletitled, Microstructure-dependent thermoelectric properties of polycrystalline InGaO3(ZnO)2 superlattice films

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Deposition temperature dependence and long-term stability of the conductivity of undoped ZnO grown by atomic layer deposition

Holger Beh; Daniel Hiller; Jan Laube; Sebastian Gutsch; Margit Zacharias

J. Vac. Sci. Technol. A 35, 01B127 (2017) https://doi.org/10.1116/1.4972466

Abstract

View articletitled, Deposition temperature dependence and long-term stability of the conductivity of undoped ZnO grown by atomic layer deposition

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Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor

Sydney C. Buttera; David J. Mandia; Seán T. Barry

J. Vac. Sci. Technol. A 35, 01B128 (2017) https://doi.org/10.1116/1.4972469

Abstract

View articletitled, Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor

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Plasma-assisted atomic layer deposition of HfN_x: Tailoring the film properties by the plasma gas composition

S. Karwal; B. L. Williams; J.-P. Niemelä; M. A. Verheijen; W. M. M. Kessels; M. Creatore

J. Vac. Sci. Technol. A 35, 01B129 (2017) https://doi.org/10.1116/1.4972208

Abstract

View articletitled, Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition

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Atomic layer deposition of HfO₂ using HfCp(NMe₂)₃ and O₂ plasma

Akhil Sharma; Valentino Longo; Marcel A. Verheijen; Ageeth A. Bol; W. M. M. (Erwin) Kessels

J. Vac. Sci. Technol. A 35, 01B130 (2017) https://doi.org/10.1116/1.4972210

Abstract

View articletitled, Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma

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Low-temperature-atomic-layer-deposition of SiO₂ using various organic precursors

Sehyoung Ahn; Yunsu Kim; Sangyeoul Kang; Kivin Im; Hanjin Lim

J. Vac. Sci. Technol. A 35, 01B131 (2017) https://doi.org/10.1116/1.4972211

Abstract

View articletitled, Low-temperature-atomic-layer-deposition of SiO2 using various organic precursors

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Incorporation of Al or Hf in atomic layer deposition TiO₂ for ternary dielectric gate insulation of InAlN/GaN and AlGaN/GaN metal-insulator-semiconductor-heterojunction structure

Albert Colon; Liliana Stan; Ralu Divan; Junxia Shi

J. Vac. Sci. Technol. A 35, 01B132 (2017) https://doi.org/10.1116/1.4972252

Abstract

View articletitled, Incorporation of Al or Hf in atomic layer deposition TiO2 for ternary dielectric gate insulation of InAlN/GaN and AlGaN/GaN metal-insulator-semiconductor-heterojunction structure

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Enhanced process and composition control for atomic layer deposition with lithium trimethylsilanolate

Amund Ruud; Ville Miikkulainen; Kenichiro Mizohata; Helmer Fjellvåg; Ola Nilsen

J. Vac. Sci. Technol. A 35, 01B133 (2017) https://doi.org/10.1116/1.4972209

Abstract

View articletitled, Enhanced process and composition control for atomic layer deposition with lithium trimethylsilanolate

Supplementary Material

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Room temperature TiO₂ atomic layer deposition on collagen membrane from a titanium alkylamide precursor

Arghya K. Bishal; Cortino Sukotjo; Christos G. Takoudis

J. Vac. Sci. Technol. A 35, 01B134 (2017) https://doi.org/10.1116/1.4972245

Abstract

View articletitled, Room temperature TiO2 atomic layer deposition on collagen membrane from a titanium alkylamide precursor

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CHORUS

In-gap states in titanium dioxide and oxynitride atomic layer deposited films

Karsten Henkel; Chittaranjan Das; Małgorzata Kot; Dieter Schmeißer; Franziska Naumann; Irina Kärkkänen; Hassan Gargouri

J. Vac. Sci. Technol. A 35, 01B135 (2017) https://doi.org/10.1116/1.4972247

Abstract

View articletitled, In-gap states in titanium dioxide and oxynitride atomic layer deposited films

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Molecular layer deposition using cyclic azasilanes, maleic anhydride, trimethylaluminum, and water

Ling Ju; Bo Bao; Sean W. King; Nicholas C. Strandwitz

J. Vac. Sci. Technol. A 35, 01B136 (2017) https://doi.org/10.1116/1.4972418

Abstract

View articletitled, Molecular layer deposition using cyclic azasilanes, maleic anhydride, trimethylaluminum, and water

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Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries

Denis V. Nazarov; Maxim Yu. Maximov; Pavel A. Novikov; Anatoly A. Popovich; Aleksey O. Silin; Vladimir M. Smirnov; Natalia P. Bobrysheva; Olga M. Osmolovskaya; Michail G. Osmolovsky; Aleksandr M. Rumyantsev

J. Vac. Sci. Technol. A 35, 01B137 (2017) https://doi.org/10.1116/1.4972554

Abstract

View articletitled, Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries

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Reactant utilization in CVD and ALD chambers

Edward J. McInerney

J. Vac. Sci. Technol. A 35, 01B138 (2017) https://doi.org/10.1116/1.4972773

Abstract

View articletitled, Reactant utilization in CVD and ALD chambers

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Atomic layer deposition of h-BN(0001) on RuO₂(110)/Ru(0001)

Jessica Jones; Brock Beauclair; Opeyemi Olanipekun; Sherard Lightbourne; Mofei Zhang; Brittany Pollok; Aparna Pilli; Jeffry Kelber

J. Vac. Sci. Technol. A 35, 01B139 (2017) https://doi.org/10.1116/1.4972784

Abstract

View articletitled, Atomic layer deposition of h-BN(0001) on RuO2(110)/Ru(0001)

Supplementary Material

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CHORUS

Plasma enhanced atomic layer deposition of Al₂O₃ gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments

Emanuela Schilirò; Patrick Fiorenza; Giuseppe Greco; Fabrizio Roccaforte; Raffaella Lo Nigro

J. Vac. Sci. Technol. A 35, 01B140 (2017) https://doi.org/10.1116/1.4972257

Abstract

View articletitled, Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments

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Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum

Adam Bertuch; Brent D. Keller; Nicola Ferralis; Jeffrey C. Grossman; Ganesh Sundaram

J. Vac. Sci. Technol. A 35, 01B141 (2017) https://doi.org/10.1116/1.4972776

Abstract

View articletitled, Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum

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Growth of aluminum oxide on silicon carbide with an atomically sharp interface

Ana Gomes Silva; Kjeld Pedersen; Zheshen Li; Jeanette Hvam; Rajnish Dhiman; Per Morgen

J. Vac. Sci. Technol. A 35, 01B142 (2017) https://doi.org/10.1116/1.4972774

Abstract

View articletitled, Growth of aluminum oxide on silicon carbide with an atomically sharp interface

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Plasma-enhanced atomic layer deposition of superconducting niobium nitride

Mark J. Sowa; Yonas Yemane; Jinsong Zhang; Johanna C. Palmstrom; Ling Ju; Nicholas C. Strandwitz; Fritz B. Prinz; J. Provine

J. Vac. Sci. Technol. A 35, 01B143 (2017) https://doi.org/10.1116/1.4972858

Abstract

View articletitled, Plasma-enhanced atomic layer deposition of superconducting niobium nitride

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Stress modulation of titanium nitride thin films deposited using atomic layer deposition

Manuj Nahar; Noel Rocklein; Michael Andreas; Greg Funston; Duane Goodner

J. Vac. Sci. Technol. A 35, 01B144 (2017) https://doi.org/10.1116/1.4972859

Abstract

View articletitled, Stress modulation of titanium nitride thin films deposited using atomic layer deposition

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Special Issue on Atomic Layer Etching (ALE)

Quasi-atomic layer etching of silicon nitride

Sonam D. Sherpa; Alok Ranjan

J. Vac. Sci. Technol. A 35, 01A102 (2017) https://doi.org/10.1116/1.4967236

Abstract

View articletitled, Quasi-atomic layer etching of silicon nitride

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Atomic layer etching of SiO₂ by alternating an O₂ plasma with fluorocarbon film deposition

Takayoshi Tsutsumi; Hiroki Kondo; Masaru Hori; Masaru Zaitsu; Akiko Kobayashi; Toshihisa Nozawa; Nobuyoshi Kobayashi

J. Vac. Sci. Technol. A 35, 01A103 (2017) https://doi.org/10.1116/1.4971171

Abstract

View articletitled, Atomic layer etching of SiO2 by alternating an O2 plasma with fluorocarbon film deposition

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Atomic fluorine densities in electron beam generated plasmas: A high ion to radical ratio source for etching with atomic level precision

David R. Boris; Tzvetelina B. Petrova; George M. Petrov; Scott G. Walton

J. Vac. Sci. Technol. A 35, 01A104 (2017) https://doi.org/10.1116/1.4971416

Abstract

View articletitled, Atomic fluorine densities in electron beam generated plasmas: A high ion to radical ratio source for etching with atomic level precision

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Atomic layer etching in close-to-conventional plasma etch tools

Andy Goodyear; Mike Cooke

J. Vac. Sci. Technol. A 35, 01A105 (2017) https://doi.org/10.1116/1.4972393

Abstract

View articletitled, Atomic layer etching in close-to-conventional plasma etch tools

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Special Issue on Atomic Layer Deposition (ALD)

Special Issue on Atomic Layer Etching (ALE)

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