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January 2017
ISSN 0734-2101
EISSN 1520-8559
Review Article
Review Article: Recommended reading list of early publications on atomic layer deposition—Outcome of the “Virtual Project on the History of ALD”
Esko Ahvenniemi; Andrew R. Akbashev; Saima Ali; Mikhael Bechelany; Maria Berdova; Stefan Boyadjiev; David C. Cameron; Rong Chen; Mikhail Chubarov; Veronique Cremers; Anjana Devi; Viktor Drozd; Liliya Elnikova; Gloria Gottardi; Kestutis Grigoras; Dennis M. Hausmann; Cheol Seong Hwang; Shih-Hui Jen; Tanja Kallio; Jaana Kanervo; Ivan Khmelnitskiy; Do Han Kim; Lev Klibanov; Yury Koshtyal; A. Outi I. Krause; Jakob Kuhs; Irina Kärkkänen; Marja-Leena Kääriäinen; Tommi Kääriäinen; Luca Lamagna; Adam A. Łapicki; Markku Leskelä; Harri Lipsanen; Jussi Lyytinen; Anatoly Malkov; Anatoly Malygin; Abdelkader Mennad; Christian Militzer; Jyrki Molarius; Małgorzata Norek; Çağla Özgit-Akgün; Mikhail Panov; Henrik Pedersen; Fabien Piallat; Georgi Popov; Riikka L. Puurunen; Geert Rampelberg; Robin H. A. Ras; Erwan Rauwel; Fred Roozeboom; Timo Sajavaara; Hossein Salami; Hele Savin; Nathanaelle Schneider; Thomas E. Seidel; Jonas Sundqvist; Dmitry B. Suyatin; Tobias Törndahl; J. Ruud van Ommen; Claudia Wiemer; Oili M. E. Ylivaara; Oksana Yurkevich
J. Vac. Sci. Technol. A 35, 010801 (2017)
https://doi.org/10.1116/1.4971389
Special Issue on Atomic Layer Deposition (ALD)
Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
Hwanwoo Kim; Hyoseok Song; Changhee Shin; Kangsoo Kim; Woochool Jang; Hyunjung Kim; Seokyoon Shin; Hyeongtag Jeon
J. Vac. Sci. Technol. A 35, 01A101 (2017)
https://doi.org/10.1116/1.4964889
Anomalously high alumina atomic layer deposition growth per cycle during trimethylaluminum under-dosing conditions
J. Vac. Sci. Technol. A 35, 01B101 (2017)
https://doi.org/10.1116/1.4963368
Mechanistic modeling study of atomic layer deposition process optimization in a fluidized bed reactor
J. Vac. Sci. Technol. A 35, 01B102 (2017)
https://doi.org/10.1116/1.4964848
Investigating routes toward atomic layer deposition of silicon carbide: Ab initio screening of potential silicon and carbon precursors
J. Vac. Sci. Technol. A 35, 01B103 (2017)
https://doi.org/10.1116/1.4964890
Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps
J. Vac. Sci. Technol. A 35, 01B104 (2017)
https://doi.org/10.1116/1.4965966
Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition: Growth and mechanical properties
Oili M. E. Ylivaara; Lauri Kilpi; Xuwen Liu; Sakari Sintonen; Saima Ali; Mikko Laitinen; Jaakko Julin; Eero Haimi; Timo Sajavaara; Harri Lipsanen; Simo-Pekka Hannula; Helena Ronkainen; Riikka L. Puurunen
J. Vac. Sci. Technol. A 35, 01B105 (2017)
https://doi.org/10.1116/1.4966198
Tunable optical properties in atomic layer deposition grown ZnO thin films
Dipayan Pal; Aakash Mathur; Ajaib Singh; Jaya Singhal; Amartya Sengupta; Surjendu Dutta; Stefan Zollner; Sudeshna Chattopadhyay
J. Vac. Sci. Technol. A 35, 01B108 (2017)
https://doi.org/10.1116/1.4967296
Vapor deposition of copper(I) bromide films via a two-step conversion process
J. Vac. Sci. Technol. A 35, 01B109 (2017)
https://doi.org/10.1116/1.4967726
Plasma enhanced atomic layer deposition of zinc sulfide thin films
J. Vac. Sci. Technol. A 35, 01B111 (2017)
https://doi.org/10.1116/1.4967724
Potential gold(I) precursors evaluated for atomic layer deposition
Maarit Mäkelä; Timo Hatanpää; Mikko Ritala; Markku Leskelä; Kenichiro Mizohata; Kristoffer Meinander; Jyrki Räisänen
J. Vac. Sci. Technol. A 35, 01B112 (2017)
https://doi.org/10.1116/1.4968193
Ab initio study of the trimethylaluminum atomic layer deposition process on carbon nanotubes—An alternative initial step
J. Vac. Sci. Technol. A 35, 01B113 (2017)
https://doi.org/10.1116/1.4968196
As2S3 thin films deposited by atomic layer deposition
Elina Färm; Mikko J. Heikkilä; Marko Vehkamäki; Kenichiro Mizohata; Mikko Ritala; Markku Leskelä; Marianna Kemell
J. Vac. Sci. Technol. A 35, 01B114 (2017)
https://doi.org/10.1116/1.4968202
Simulation of atomic layer deposition on nanoparticle agglomerates
J. Vac. Sci. Technol. A 35, 01B116 (2017)
https://doi.org/10.1116/1.4968548
Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
Sebastian Franke; Matthias Baumkötter; Carsten Monka; Sebastian Raabe; Reinhard Caspary; Hans-Hermann Johannes; Wolfgang Kowalsky; Sebastian Beck; Annemarie Pucci; Hassan Gargouri
J. Vac. Sci. Technol. A 35, 01B117 (2017)
https://doi.org/10.1116/1.4971173
Experimental and simulation approach for process optimization of atomic layer deposited thin films in high aspect ratio 3D structures
Matthias C. Schwille; Timo Schössler; Jonas Barth; Martin Knaut; Florian Schön; Arnim Höchst; Martin Oettel; Johann W. Bartha
J. Vac. Sci. Technol. A 35, 01B118 (2017)
https://doi.org/10.1116/1.4971196
Temperature dependence of the sticking coefficients of bis-diethyl aminosilane and trimethylaluminum in atomic layer deposition
J. Vac. Sci. Technol. A 35, 01B119 (2017)
https://doi.org/10.1116/1.4971197
Fabrication of nanopower generators using thin atomic layer deposited films
J. Vac. Sci. Technol. A 35, 01B120 (2017)
https://doi.org/10.1116/1.4971403
Room temperature atomic layer deposition of TiO2 on gold nanoparticles
J. Vac. Sci. Technol. A 35, 01B121 (2017)
https://doi.org/10.1116/1.4971398
Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
J. Vac. Sci. Technol. A 35, 01B122 (2017)
https://doi.org/10.1116/1.4971399
Atomic layer deposited single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A
Lawrence Boyu Young; Chao-Kai Cheng; Guan-Jie Lu; Keng-Yung Lin; Yen-Hsun Lin; Hsien-Wen Wan; Mei-Yi Li; Ren-Fong Cai; Shen-Chuan Lo; Chia-Hung Hsu; Jueinai Kwo; Minghwei Hong
J. Vac. Sci. Technol. A 35, 01B123 (2017)
https://doi.org/10.1116/1.4971989
Activation of the dimers and tetramers of metal amidinate atomic layer deposition precursors upon adsorption on silicon oxide surfaces
Bo Chen; Yichen Duan; Yunxi Yao; Qiang Ma; Jason P. Coyle; Seán T. Barry; Andrew V. Teplyakov; Francisco Zaera
J. Vac. Sci. Technol. A 35, 01B124 (2017)
https://doi.org/10.1116/1.4971990
Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
J. Vac. Sci. Technol. A 35, 01B125 (2017)
https://doi.org/10.1116/1.4971991
Microstructure-dependent thermoelectric properties of polycrystalline InGaO3(ZnO)2 superlattice films
J. Vac. Sci. Technol. A 35, 01B126 (2017)
https://doi.org/10.1116/1.4972207
Deposition temperature dependence and long-term stability of the conductivity of undoped ZnO grown by atomic layer deposition
J. Vac. Sci. Technol. A 35, 01B127 (2017)
https://doi.org/10.1116/1.4972466
Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
J. Vac. Sci. Technol. A 35, 01B128 (2017)
https://doi.org/10.1116/1.4972469
Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
J. Vac. Sci. Technol. A 35, 01B129 (2017)
https://doi.org/10.1116/1.4972208
Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
J. Vac. Sci. Technol. A 35, 01B130 (2017)
https://doi.org/10.1116/1.4972210
Low-temperature-atomic-layer-deposition of SiO2 using various organic precursors
J. Vac. Sci. Technol. A 35, 01B131 (2017)
https://doi.org/10.1116/1.4972211
Enhanced process and composition control for atomic layer deposition with lithium trimethylsilanolate
J. Vac. Sci. Technol. A 35, 01B133 (2017)
https://doi.org/10.1116/1.4972209
Room temperature TiO2 atomic layer deposition on collagen membrane from a titanium alkylamide precursor
J. Vac. Sci. Technol. A 35, 01B134 (2017)
https://doi.org/10.1116/1.4972245
In-gap states in titanium dioxide and oxynitride atomic layer deposited films
Karsten Henkel; Chittaranjan Das; Małgorzata Kot; Dieter Schmeißer; Franziska Naumann; Irina Kärkkänen; Hassan Gargouri
J. Vac. Sci. Technol. A 35, 01B135 (2017)
https://doi.org/10.1116/1.4972247
Molecular layer deposition using cyclic azasilanes, maleic anhydride, trimethylaluminum, and water
J. Vac. Sci. Technol. A 35, 01B136 (2017)
https://doi.org/10.1116/1.4972418
Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
Denis V. Nazarov; Maxim Yu. Maximov; Pavel A. Novikov; Anatoly A. Popovich; Aleksey O. Silin; Vladimir M. Smirnov; Natalia P. Bobrysheva; Olga M. Osmolovskaya; Michail G. Osmolovsky; Aleksandr M. Rumyantsev
J. Vac. Sci. Technol. A 35, 01B137 (2017)
https://doi.org/10.1116/1.4972554
Atomic layer deposition of h-BN(0001) on RuO2(110)/Ru(0001)
Jessica Jones; Brock Beauclair; Opeyemi Olanipekun; Sherard Lightbourne; Mofei Zhang; Brittany Pollok; Aparna Pilli; Jeffry Kelber
J. Vac. Sci. Technol. A 35, 01B139 (2017)
https://doi.org/10.1116/1.4972784
Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
J. Vac. Sci. Technol. A 35, 01B141 (2017)
https://doi.org/10.1116/1.4972776
Growth of aluminum oxide on silicon carbide with an atomically sharp interface
J. Vac. Sci. Technol. A 35, 01B142 (2017)
https://doi.org/10.1116/1.4972774
Plasma-enhanced atomic layer deposition of superconducting niobium nitride
Mark J. Sowa; Yonas Yemane; Jinsong Zhang; Johanna C. Palmstrom; Ling Ju; Nicholas C. Strandwitz; Fritz B. Prinz; J. Provine
J. Vac. Sci. Technol. A 35, 01B143 (2017)
https://doi.org/10.1116/1.4972858
Stress modulation of titanium nitride thin films deposited using atomic layer deposition
J. Vac. Sci. Technol. A 35, 01B144 (2017)
https://doi.org/10.1116/1.4972859
Special Issue on Atomic Layer Etching (ALE)
Atomic fluorine densities in electron beam generated plasmas: A high ion to radical ratio source for etching with atomic level precision
J. Vac. Sci. Technol. A 35, 01A104 (2017)
https://doi.org/10.1116/1.4971416