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Structural, mechanical, and magnetic properties of GaFe₃N thin films

Muhammad Junaid; Denis Music; Marcus Hans; Jochen M. Schneider; Tanja Scholz; Richard Dronskowski; Daniel Primetzhofer

J. Vac. Sci. Technol. A 34, 040601 (2016) https://doi.org/10.1116/1.4949262

Abstract

View articletitled, Structural, mechanical, and magnetic properties of GaFe3N thin films

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Formation of a SiOF reaction intermixing layer on SiO₂ etching using C₄F₆/O₂/Ar plasmas

Yoshinobu Ohya; Maju Tomura; Kenji Ishikawa; Makoto Sekine; Masaru Hori

J. Vac. Sci. Technol. A 34, 040602 (2016) https://doi.org/10.1116/1.4949570

Abstract

View articletitled, Formation of a SiOF reaction intermixing layer on SiO2 etching using C4F6/O2/Ar plasmas

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Effect of the chamber wall on fluorocarbon-assisted atomic layer etching of SiO₂ using cyclic Ar/C₄F₈ plasma

Masatoshi Kawakami; Dominik Metzler; Chen Li; Gottlieb S. Oehrlein

J. Vac. Sci. Technol. A 34, 040603 (2016) https://doi.org/10.1116/1.4949260

Abstract

View articletitled, Effect of the chamber wall on fluorocarbon-assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma

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CHORUS

Plasma Science and Technology

Silicon nitride and silicon etching by CH₃F/O₂ and CH₃F/CO₂ plasma beams

Sanbir S. Kaler; Qiaowei Lou; Vincent M. Donnelly; Demetre J. Economou

J. Vac. Sci. Technol. A 34, 041301 (2016) https://doi.org/10.1116/1.4949261

Abstract

View articletitled, Silicon nitride and silicon etching by CH3F/O2 and CH3F/CO2 plasma beams

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Near-edge x-ray absorption fine structure spectroscopy at atmospheric pressure with a table-top laser-induced soft x-ray source

Frank-Christian Kühl; Matthias Müller; Meike Schellhorn; Klaus Mann; Stefan Wieneke; Karin Eusterhues

J. Vac. Sci. Technol. A 34, 041302 (2016) https://doi.org/10.1116/1.4950599

Abstract

View articletitled, Near-edge x-ray absorption fine structure spectroscopy at atmospheric pressure with a table-top laser-induced soft x-ray source

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Gas discharge plasma treatment of poly(ethylene glycol-co-1,3/1,4 cyclohexanedimethanol terephthalate) for enhanced paint adhesion

Hernando S. Salapare, III; Hannah Shamina O. Cosiñero; Beverly Anne T. Suarez; Miguel Y. Bacaoco; Julius Andrew P. Nuñez; Frédéric Guittard; Henry J. Ramos

J. Vac. Sci. Technol. A 34, 041303 (2016) https://doi.org/10.1116/1.4949867

Abstract

View articletitled, Gas discharge plasma treatment of poly(ethylene glycol-co-1,3/1,4 cyclohexanedimethanol terephthalate) for enhanced paint adhesion

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Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells

Jean-Pierre Landesman; Juan Jiménez; Christophe Levallois; Frédéric Pommereau; Cesare Frigeri; Alfredo Torres; Yoan Léger; Alexandre Beck; Ahmed Rhallabi

J. Vac. Sci. Technol. A 34, 041304 (2016) https://doi.org/10.1116/1.4950445

Abstract

View articletitled, Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells

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Time-resolved ion flux and impedance measurements for process characterization in reactive high-power impulse magnetron sputtering

Daniel Lundin; Martin Čada; Zdenĕk Hubička

J. Vac. Sci. Technol. A 34, 041305 (2016) https://doi.org/10.1116/1.4953033

Abstract

View articletitled, Time-resolved ion flux and impedance measurements for process characterization in reactive high-power impulse magnetron sputtering

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Roughness generation during Si etching in Cl₂ pulsed plasma

Odile Mourey; Camille Petit-Etienne; Gilles Cunge; Maxime Darnon; Emilie Despiau-Pujo; Paulin Brichon; Eddy Lattu-Romain; Michel Pons; Olivier Joubert

J. Vac. Sci. Technol. A 34, 041306 (2016) https://doi.org/10.1116/1.4951694

Abstract

View articletitled, Roughness generation during Si etching in Cl2 pulsed plasma

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Fluorocarbon based atomic layer etching of Si₃N₄ and etching selectivity of SiO₂ over Si₃N₄

Chen Li; Dominik Metzler; Chiukin Steven Lai; Eric A. Hudson; Gottlieb S. Oehrlein

J. Vac. Sci. Technol. A 34, 041307 (2016) https://doi.org/10.1116/1.4954961

Abstract

View articletitled, Fluorocarbon based atomic layer etching of Si3N4 and etching selectivity of SiO2 over Si3N4

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CHORUS

Surfaces

Fast and low-cost method to fabricate large-area superhydrophobic surface on steel substrate with anticorrosion and anti-icing properties

Wei Yan; Hongtao Liu; Tianchi Chen; Qinghe Sun; Wei Zhu

J. Vac. Sci. Technol. A 34, 041401 (2016) https://doi.org/10.1116/1.4953031

Abstract

View articletitled, Fast and low-cost method to fabricate large-area superhydrophobic surface on steel substrate with anticorrosion and anti-icing properties

Supplementary Material

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Application of nitrogen plasma immersion ion implantation to titanium nasal implants with nanonetwork surface structure

Ying-Sui Sun; Lan Zhang; Hongqin Zhu; Wei-En Yang; Ming-Ying Lan; Sheng-Wei Lee; Her-Hsiung Huang

J. Vac. Sci. Technol. A 34, 041402 (2016) https://doi.org/10.1116/1.4953409

Abstract

View articletitled, Application of nitrogen plasma immersion ion implantation to titanium nasal implants with nanonetwork surface structure

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Solventless grafting of functional polymer coatings onto Parylene C

Mark M. De Luna; Benny Chen; Laura C. Bradley; Ravi Bhandia; Malancha Gupta

J. Vac. Sci. Technol. A 34, 041403 (2016) https://doi.org/10.1116/1.4953876

Abstract

View articletitled, Solventless grafting of functional polymer coatings onto Parylene C

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CHORUS

Adsorption of n-butane on graphene/Ru(0001)—A molecular beam scattering study

Nilushni Sivapragasam; Mindika T. Nayakasinghe; Uwe Burghaus

J. Vac. Sci. Technol. A 34, 041404 (2016) https://doi.org/10.1116/1.4954811

Abstract

View articletitled, Adsorption of n-butane on graphene/Ru(0001)—A molecular beam scattering study

Supplementary Material

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Gas cluster ion beam for the characterization of organic materials in submarine basalts as Mars analogs

Naoko Sano; Graham W. H. Purvis; Anders J. Barlow; Geoffrey D. Abbott; Neil N. D. Gray; Peter J. Cumpson

J. Vac. Sci. Technol. A 34, 041405 (2016) https://doi.org/10.1116/1.4954940

Abstract

View articletitled, Gas cluster ion beam for the characterization of organic materials in submarine basalts as Mars analogs

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Thin Films

Fabrication of Nb/Pb structures through ultrashort pulsed laser deposition

Francisco Gontad; Antonella Lorusso; Argyro Klini; Esteban Broitman; Alessio Perrone; Costas Fotakis

J. Vac. Sci. Technol. A 34, 041501 (2016) https://doi.org/10.1116/1.4948529

Abstract

View articletitled, Fabrication of Nb/Pb structures through ultrashort pulsed laser deposition

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Target poisoning during CrN deposition by mixed high power impulse magnetron sputtering and unbalanced magnetron sputtering technique

Yashodhan P. Purandare; Arutiun P. Ehiasarian; Papken Eh Hovsepian

J. Vac. Sci. Technol. A 34, 041502 (2016) https://doi.org/10.1116/1.4950886

Abstract

View articletitled, Target poisoning during CrN deposition by mixed high power impulse magnetron sputtering and unbalanced magnetron sputtering technique

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Use of aluminum oxide as a permeation barrier for producing thin films on aluminum substrates

James L. Provo

J. Vac. Sci. Technol. A 34, 041503 (2016) https://doi.org/10.1116/1.4950884

Abstract

View articletitled, Use of aluminum oxide as a permeation barrier for producing thin films on aluminum substrates

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Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization

Jun Beom Kim; Soo-Hyun Kim; Won Seok Han; Do-Joong Lee

J. Vac. Sci. Technol. A 34, 041504 (2016) https://doi.org/10.1116/1.4951691

Abstract

View articletitled, Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization

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Impact of reduced graphene oxide on MoS₂ grown by sulfurization of sputtered MoO₃ and Mo precursor films

Shanee Pacley; Jianjun Hu; Michael Jespersen; Al Hilton; Adam Waite; Jacob Brausch; Emory Beck-Millerton; Andrey A. Voevodin

J. Vac. Sci. Technol. A 34, 041505 (2016) https://doi.org/10.1116/1.4952399

Abstract

View articletitled, Impact of reduced graphene oxide on MoS2 grown by sulfurization of sputtered MoO3 and Mo precursor films

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Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films

Mikael Broas; Perttu Sippola; Timo Sajavaara; Vesa Vuorinen; Alexander Pyymaki Perros; Harri Lipsanen; Mervi Paulasto-Kröckel

J. Vac. Sci. Technol. A 34, 041506 (2016) https://doi.org/10.1116/1.4953029

Abstract

View articletitled, Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films

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Formation of homologous In₂O₃(ZnO)_m thin films and its thermoelectric properties

Junjun Jia; Cleva Ow-Yang; Güliz Inan Akmehmet; Shin-ichi Nakamura; Kunihisa Kato; Yuzo Shigesato

J. Vac. Sci. Technol. A 34, 041507 (2016) https://doi.org/10.1116/1.4953032

Abstract

View articletitled, Formation of homologous In2O3(ZnO)m thin films and its thermoelectric properties

Supplementary Material

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Atomic layer deposition of (K,Na)(Nb,Ta)O₃ thin films

Henrik Hovde Sønsteby; Ola Nilsen; Helmer Fjellvåg

J. Vac. Sci. Technol. A 34, 041508 (2016) https://doi.org/10.1116/1.4953406

Abstract

View articletitled, Atomic layer deposition of (K,Na)(Nb,Ta)O3 thin films

Supplementary Material

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Large-scale molecular dynamics simulations of TiN/TiN(001) epitaxial film growth

Daniel Edström; Davide G. Sangiovanni; Lars Hultman; Ivan Petrov; J. E. Greene; Valeriu Chirita

J. Vac. Sci. Technol. A 34, 041509 (2016) https://doi.org/10.1116/1.4953404

Abstract

View articletitled, Large-scale molecular dynamics simulations of TiN/TiN(001) epitaxial film growth

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Analysis of compositional uniformity in Al_xGa_1−xN thin films using atom probe tomography and electron microscopy

Fang Liu; Li Huang; Lisa M. Porter; Robert F. Davis; Daniel K. Schreiber

J. Vac. Sci. Technol. A 34, 041510 (2016) https://doi.org/10.1116/1.4953410

Abstract

View articletitled, Analysis of compositional uniformity in AlxGa1−xN thin films using atom probe tomography and electron microscopy

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CHORUS

Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition

Seda Kizir; Ali Haider; Necmi Biyikli

J. Vac. Sci. Technol. A 34, 041511 (2016) https://doi.org/10.1116/1.4953463

Abstract

View articletitled, Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition

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Studies on cathodic arc PVD grown TiCrN based erosion resistant thin films

Krishna Valleti; Puneet C; Rama Krishna L; Shrikant V. Joshi

J. Vac. Sci. Technol. A 34, 041512 (2016) https://doi.org/10.1116/1.4953466

Abstract

View articletitled, Studies on cathodic arc PVD grown TiCrN based erosion resistant thin films

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Growth and structural evolution of Sn on Ag(001): Epitaxial monolayer to thick alloy film

Suvankar Chakraborty; Krishnakumar S. R. Menon

J. Vac. Sci. Technol. A 34, 041513 (2016) https://doi.org/10.1116/1.4953543

Abstract

View articletitled, Growth and structural evolution of Sn on Ag(001): Epitaxial monolayer to thick alloy film

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Precursor dependent nucleation and growth of ruthenium films during chemical vapor deposition

Wen Liao; John G. Ekerdt

J. Vac. Sci. Technol. A 34, 041514 (2016) https://doi.org/10.1116/1.4953882

Abstract

View articletitled, Precursor dependent nucleation and growth of ruthenium films during chemical vapor deposition

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CHORUS

XPS study of thermal and electron-induced decomposition of Ni and Co acetylacetonate thin films for metal deposition

Theodor Weiss; Jonas Warneke; Volkmar Zielasek; Petra Swiderek; Marcus Bäumer

J. Vac. Sci. Technol. A 34, 041515 (2016) https://doi.org/10.1116/1.4953469

Abstract

View articletitled, XPS study of thermal and electron-induced decomposition of Ni and Co acetylacetonate thin films for metal deposition

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X-ray photoelectron spectroscopy for identification of morphological defects and disorders in graphene devices

Pinar Aydogan; Emre O. Polat; Coskun Kocabas; Sefik Suzer

J. Vac. Sci. Technol. A 34, 041516 (2016) https://doi.org/10.1116/1.4954401

Abstract

View articletitled, X-ray photoelectron spectroscopy for identification of morphological defects and disorders in graphene devices

Supplementary Material

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Effect of discharge power on target poisoning and coating properties in reactive magnetron sputter deposition of TiN

Christian Saringer; Robert Franz; Katrin Zorn; Christian Mitterer

J. Vac. Sci. Technol. A 34, 041517 (2016) https://doi.org/10.1116/1.4954949

Abstract

View articletitled, Effect of discharge power on target poisoning and coating properties in reactive magnetron sputter deposition of TiN

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Effect of the addition of Si into Nb₂O₅ coatings on their structural, optical, and mechanical properties

Roberto Mirabal-Rojas; Stephen Muhl; Sandra E. Rodil; Enrique Camps; Michael Lejeune; Andreas Zeinert

J. Vac. Sci. Technol. A 34, 041518 (2016) https://doi.org/10.1116/1.4954985

Abstract

View articletitled, Effect of the addition of Si into Nb2O5 coatings on their structural, optical, and mechanical properties

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Vacuum Science and Technology

Method for measuring thermal accommodation coefficients of gases on thin film surfaces using a MEMS sensor structure

Mario Grau; Friedemann Völklein; Andreas Meier; Christina Kunz; Jonas Heidler; Peter Woias

J. Vac. Sci. Technol. A 34, 041601 (2016) https://doi.org/10.1116/1.4948527

Abstract

View articletitled, Method for measuring thermal accommodation coefficients of gases on thin film surfaces using a MEMS sensor structure

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Atomic bonding effects in annular dark field scanning transmission electron microscopy. I. Computational predictions

Michael L. Odlyzko; Burak Himmetoglu; Matteo Cococcioni; K. Andre Mkhoyan

J. Vac. Sci. Technol. A 34, 041602 (2016) https://doi.org/10.1116/1.4954871

Abstract

View articletitled, Atomic bonding effects in annular dark field scanning transmission electron microscopy. I. Computational predictions

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CHORUS

Atomic bonding effects in annular dark field scanning transmission electron microscopy. II. Experiments

Michael L. Odlyzko; Jacob T. Held; K. Andre Mkhoyan

J. Vac. Sci. Technol. A 34, 041603 (2016) https://doi.org/10.1116/1.4954877

Abstract

View articletitled, Atomic bonding effects in annular dark field scanning transmission electron microscopy. II. Experiments

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CHORUS

Shop Notes

Planar regions of GaAs (001) prepared by Ga droplet motion

Changxi Zheng; Wen-Xin Tang; David E. Jesson

J. Vac. Sci. Technol. A 34, 043201 (2016) https://doi.org/10.1116/1.4948530

Abstract

View articletitled, Planar regions of GaAs (001) prepared by Ga droplet motion

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Papers from Shanghai Thin Films 2015

High performance Schottky diodes based on indium-gallium-zinc-oxide

Jiawei Zhang; Qian Xin; Aimin Song

J. Vac. Sci. Technol. A 34, 04C101 (2016) https://doi.org/10.1116/1.4945102

Abstract

View articletitled, High performance Schottky diodes based on indium-gallium-zinc-oxide

Supplementary Material

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Antimicrobial activity of tantalum oxide coatings decorated with Ag nanoparticles

Huiliang Cao; Fanhao Meng; Xuanyong Liu

J. Vac. Sci. Technol. A 34, 04C102 (2016) https://doi.org/10.1116/1.4947077

Abstract

View articletitled, Antimicrobial activity of tantalum oxide coatings decorated with Ag nanoparticles

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Surface passivation of Fe₃O₄ nanoparticles with Al₂O₃ via atomic layer deposition in a rotating fluidized bed reactor

Chen-Long Duan; Zhang Deng; Kun Cao; Hong-Feng Yin; Bin Shan; Rong Chen

J. Vac. Sci. Technol. A 34, 04C103 (2016) https://doi.org/10.1116/1.4952401

Abstract

View articletitled, Surface passivation of Fe3O4 nanoparticles with Al2O3 via atomic layer deposition in a rotating fluidized bed reactor

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