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Letters

Comparison of defects in crystalline oxide semiconductor materials by electron spin resonance

Tokiyoshi Matsuda; Mutsumi Kimura

J. Vac. Sci. Technol. A 33, 020601 (2015) https://doi.org/10.1116/1.4904400

Abstract

View articletitled, Comparison of defects in crystalline oxide semiconductor materials by electron spin resonance

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In-situ nitrogen plasma passivation of Al₂O₃/GaN interface states

Junwoo Son; Varistha Chobpattana; Brian M. McSkimming; Susanne Stemmer

J. Vac. Sci. Technol. A 33, 020602 (2015) https://doi.org/10.1116/1.4905846

Abstract

View articletitled, In-situ nitrogen plasma passivation of Al2O3/GaN interface states

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Enhancement of Raman signals from low-k dielectrics with angle-resolved light scattering on nanostructure patterned Cu/low-k interconnects of IC devices

Maggie Y. M. Huang; Bo Liu; Pik Kee Tan; Jeffrey C. K. Lam; Zhihong Mai

J. Vac. Sci. Technol. A 33, 020603 (2015) https://doi.org/10.1116/1.4905939

Abstract

View articletitled, Enhancement of Raman signals from low-k dielectrics with angle-resolved light scattering on nanostructure patterned Cu/low-k interconnects of IC devices

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Organometallic exposure dependence on organic–inorganic hybrid material formation in polyethylene terephthalate and polyamide 6 polymer fibers

Halil I. Akyildiz; Jesse S. Jur

J. Vac. Sci. Technol. A 33, 020604 (2015) https://doi.org/10.1116/1.4907563

Abstract

View articletitled, Organometallic exposure dependence on organic–inorganic hybrid material formation in polyethylene terephthalate and polyamide 6 polymer fibers

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Effects of chemical intermixing on electrical and thermal contact conductances at metallized bismuth and antimony telluride interfaces

Devender; Rutvik J. Mehta; Kelly Lofgreen; Ravi Mahajan; Masashi Yamaguchi; Theodorian Borca-Tasciuc; Ganpati Ramanath

J. Vac. Sci. Technol. A 33, 020605 (2015) https://doi.org/10.1116/1.4906573

Abstract

View articletitled, Effects of chemical intermixing on electrical and thermal contact conductances at metallized bismuth and antimony telluride interfaces

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Molecular beam epitaxy growth of SnO₂ using a tin chemical precursor

Tianqi Wang; Abhinav Prakash; Ellis Warner; Wayne L. Gladfelter; Bharat Jalan

J. Vac. Sci. Technol. A 33, 020606 (2015) https://doi.org/10.1116/1.4913294

Abstract

View articletitled, Molecular beam epitaxy growth of SnO2 using a tin chemical precursor

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CHORUS

Review Articles

Electromagnetic effects in high-frequency large-area capacitive discharges: A review

Yong-Xin Liu; Yu-Ru Zhang; Annemie Bogaerts; You-Nian Wang

J. Vac. Sci. Technol. A 33, 020801 (2015) https://doi.org/10.1116/1.4907926

Abstract

View articletitled, Electromagnetic effects in high-frequency large-area capacitive discharges: A review

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Overview of atomic layer etching in the semiconductor industry

Keren J. Kanarik; Thorsten Lill; Eric A. Hudson; Saravanapriyan Sriraman; Samantha Tan; Jeffrey Marks; Vahid Vahedi; Richard A. Gottscho

J. Vac. Sci. Technol. A 33, 020802 (2015) https://doi.org/10.1116/1.4913379

Abstract

View articletitled, Overview of atomic layer etching in the semiconductor industry

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Interfaces

Plasmon-enhanced photocurrent of Ge-doped InGaO thin film transistors using silver nanoparticles

Si Jin Park; Sang Moo Lee; Seong Jun Kang; Kwang-Ho Lee; Jin-Seong Park

J. Vac. Sci. Technol. A 33, 021101 (2015) https://doi.org/10.1116/1.4907729

Abstract

View articletitled, Plasmon-enhanced photocurrent of Ge-doped InGaO thin film transistors using silver nanoparticles

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Photovoltaics and Energy

In situ photoluminescence system for studying surface passivation in silicon heterojunction solar cells

Sergey N. Abolmasov; Pere Roca i Cabarrocas

J. Vac. Sci. Technol. A 33, 021201 (2015) https://doi.org/10.1116/1.4902014

Abstract

View articletitled, In situ photoluminescence system for studying surface passivation in silicon heterojunction solar cells

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TiO₂ nanotube arrays for photocatalysis: Effects of crystallinity, local order, and electronic structure

Jing Liu; Pegah M. Hosseinpour; Si Luo; Don Heiman; Latika Menon; Dario A. Arena; Laura H. Lewis

J. Vac. Sci. Technol. A 33, 021202 (2015) https://doi.org/10.1116/1.4902350

Abstract

View articletitled, TiO2 nanotube arrays for photocatalysis: Effects of crystallinity, local order, and electronic structure

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Properties of reactively sputtered oxygenated cadmium sulfide (CdS:O) and their impact on CdTe solar cell performance

Daniel M. Meysing; Colin A. Wolden; Michelle M. Griffith; Hasitha Mahabaduge; Joel Pankow; Matthew O. Reese; James M. Burst; William L. Rance; Teresa M. Barnes

J. Vac. Sci. Technol. A 33, 021203 (2015) https://doi.org/10.1116/1.4903214

Abstract

View articletitled, Properties of reactively sputtered oxygenated cadmium sulfide (CdS:O) and their impact on CdTe solar cell performance

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Performance enhancement of GaN metal–semiconductor–metal ultraviolet photodetectors by insertion of ultrathin interfacial HfO₂ layer

Manoj Kumar; Burak Tekcan; Ali Kemal Okyay

J. Vac. Sci. Technol. A 33, 021204 (2015) https://doi.org/10.1116/1.4905735

Abstract

View articletitled, Performance enhancement of GaN metal–semiconductor–metal ultraviolet photodetectors by insertion of ultrathin interfacial HfO2 layer

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13.2% efficiency double-hetero structure single-junction InGaAsN solar cells grown by MOVPE

TaeWan Kim; Luke J. Mawst; Youngjo Kim; Kangho Kim; Jaejin Lee; Thomas F. Kuech

J. Vac. Sci. Technol. A 33, 021205 (2015) https://doi.org/10.1116/1.4906511

Abstract

View articletitled, 13.2% efficiency double-hetero structure single-junction InGaAsN solar cells grown by MOVPE

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In situ process monitoring during multistage coevaporation of Cu₂ZnSnS₄ thin films

Takahiro Mise; Shin Tajima; Tatsuo Fukano; Kazuo Higuchi; Hironori Katagiri

J. Vac. Sci. Technol. A 33, 021206 (2015) https://doi.org/10.1116/1.4906787

Abstract

View articletitled, In situ process monitoring during multistage coevaporation of Cu2ZnSnS4 thin films

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Broadband low reflectance stepped-cone nanostructures by nanosphere lithography

Janghyuk Kim; Byung-Jae Kim; Jihyun Kim; Suyeon Lee; Q-Han Park

J. Vac. Sci. Technol. A 33, 021207 (2015) https://doi.org/10.1116/1.4913194

Abstract

View articletitled, Broadband low reflectance stepped-cone nanostructures by nanosphere lithography

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Plasma Science and Technology

Surface cleaning for enhanced adhesion to packaging surfaces: Effect of oxygen and ammonia plasma

Sneha Gaddam; Haseeb Kazi; Bin Dong; Marcus Driver; Jeffry Kelber

J. Vac. Sci. Technol. A 33, 021301 (2015) https://doi.org/10.1116/1.4902334

Abstract

View articletitled, Surface cleaning for enhanced adhesion to packaging surfaces: Effect of oxygen and ammonia plasma

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Effect of helium pressure and flow rate on microplasma propagation along hollow-core fibers

Longfei Ji; Zhenhua Bi; Jinhai Niu; Xianhui Zhang; Renwu Zhou; Ying Song; Jiahong Liu; Dongping Liu

J. Vac. Sci. Technol. A 33, 021302 (2015) https://doi.org/10.1116/1.4902967

Abstract

View articletitled, Effect of helium pressure and flow rate on microplasma propagation along hollow-core fibers

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Study on contact distortion during high aspect ratio contact SiO₂ etching

Jong Kyu Kim; Sung Ho Lee; Sung Il Cho; Geun Young Yeom

J. Vac. Sci. Technol. A 33, 021303 (2015) https://doi.org/10.1116/1.4901872

Abstract

View articletitled, Study on contact distortion during high aspect ratio contact SiO2 etching

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Investigation of electrochemical etch differences in AlGaAs heterostructures using Cl₂ ion beam assisted etching

Kevin Anglin; William D. Goodhue; Reuel B. Swint; Jeanne Porter

J. Vac. Sci. Technol. A 33, 021304 (2015) https://doi.org/10.1116/1.4904211

Abstract

View articletitled, Investigation of electrochemical etch differences in AlGaAs heterostructures using Cl2 ion beam assisted etching

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Optical emission spectroscopic studies and comparisons of CH₃F/CO₂ and CH₃F/O₂ inductively coupled plasmas

Qiaowei Lou; Sanbir Kaler; Vincent M. Donnelly; Demetre J. Economou

J. Vac. Sci. Technol. A 33, 021305 (2015) https://doi.org/10.1116/1.4904213

Abstract

View articletitled, Optical emission spectroscopic studies and comparisons of CH3F/CO2 and CH3F/O2 inductively coupled plasmas

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CHORUS

Comparison of surface vacuum ultraviolet emissions with resonance level number densities. II. Rare-gas plasmas and Ar-molecular gas mixtures

John B. Boffard; Chun C. Lin; Shicong Wang; Amy E. Wendt; Cody Culver; Svetlana Radovanov; Harold Persing

J. Vac. Sci. Technol. A 33, 021306 (2015) https://doi.org/10.1116/1.4904036

Abstract

View articletitled, Comparison of surface vacuum ultraviolet emissions with resonance level number densities. II. Rare-gas plasmas and Ar-molecular gas mixtures

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Formation of PtSi Schottky barrier MOSFETs using plasma etching

Young Min Woo; Wan Sik Hwang; Won Jong Yoo

J. Vac. Sci. Technol. A 33, 021307 (2015) https://doi.org/10.1116/1.4904361

Abstract

View articletitled, Formation of PtSi Schottky barrier MOSFETs using plasma etching

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Viable chemical approach for patterning nanoscale magnetoresistive random access memory

Taeseung Kim; Younghee Kim; Jack Kun-Chieh Chen; Jane P. Chang

J. Vac. Sci. Technol. A 33, 021308 (2015) https://doi.org/10.1116/1.4904215

Abstract

View articletitled, Viable chemical approach for patterning nanoscale magnetoresistive random access memory

Supplementary Material

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Low damage etching method of low-k material with a neutral beam for interlayer dielectric of semiconductor device

Seung Hyun Kang; Jong Kyu Kim; Sung Ho Lee; Jin Woo Kim; Geun Young Yeom

J. Vac. Sci. Technol. A 33, 021309 (2015) https://doi.org/10.1116/1.4905736

Abstract

View articletitled, Low damage etching method of low-k material with a neutral beam for interlayer dielectric of semiconductor device

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Modeling and experimental investigation of the plasma uniformity in CF₄/O₂ capacitively coupled plasmas, operating in single frequency and dual frequency regime

Yu-Ru Zhang; Stefan Tinck; Peter De Schepper; You-Nian Wang; Annemie Bogaerts

J. Vac. Sci. Technol. A 33, 021310 (2015) https://doi.org/10.1116/1.4906819

Abstract

View articletitled, Modeling and experimental investigation of the plasma uniformity in CF4/O2 capacitively coupled plasmas, operating in single frequency and dual frequency regime

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Nitrogen mass transfer models for plasma-based low-energy ion implantation

Bocong Zheng; Kesheng Wang; Zhipeng Zhang; Honglong Che; Mingkai Lei

J. Vac. Sci. Technol. A 33, 021311 (2015) https://doi.org/10.1116/1.4907713

Abstract

View articletitled, Nitrogen mass transfer models for plasma-based low-energy ion implantation

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Generation of a direct-current, atmospheric-pressure microplasma at the surface of a liquid water microjet for continuous plasma-liquid processing

Souvik Ghosh; Brittany Bishop; Ian Morrison; Rohan Akolkar; Daniel Scherson; R. Mohan Sankaran

J. Vac. Sci. Technol. A 33, 021312 (2015) https://doi.org/10.1116/1.4907407

Abstract

View articletitled, Generation of a direct-current, atmospheric-pressure microplasma at the surface of a liquid water microjet for continuous plasma-liquid processing

Supplementary Material

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Molecular dynamic simulation of damage formation at Si vertical walls by grazing incidence of energetic ions in gate etching processes

Kohei Mizotani; Michiro Isobe; Satoshi Hamaguchi

J. Vac. Sci. Technol. A 33, 021313 (2015) https://doi.org/10.1116/1.4907724

Abstract

View articletitled, Molecular dynamic simulation of damage formation at Si vertical walls by grazing incidence of energetic ions in gate etching processes

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Surfaces

Surface structure and surface kinetics of InN grown by plasma-assisted atomic layer epitaxy: A HREELS study

Ananta R. Acharya; Brian D. Thoms; Neeraj Nepal; Charles R. Eddy, Jr.

J. Vac. Sci. Technol. A 33, 021401 (2015) https://doi.org/10.1116/1.4901873

Abstract

View articletitled, Surface structure and surface kinetics of InN grown by plasma-assisted atomic layer epitaxy: A HREELS study

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First-principles study of nitric oxide oxidation on Pt(111) versus Pt overlayer on 3d transition metals

Ryan Lacdao Arevalo; Mary Clare Sison Escaño; Hideaki Kasai

J. Vac. Sci. Technol. A 33, 021402 (2015) https://doi.org/10.1116/1.4903225

Abstract

View articletitled, First-principles study of nitric oxide oxidation on Pt(111) versus Pt overlayer on 3d transition metals

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Growth mechanism and optical properties of Ti thin films deposited onto fluorine-doped tin oxide glass substrate

Motahareh Einollahzadeh-Samadi; Reza S. Dariani

J. Vac. Sci. Technol. A 33, 021403 (2015) https://doi.org/10.1116/1.4904976

Abstract

View articletitled, Growth mechanism and optical properties of Ti thin films deposited onto fluorine-doped tin oxide glass substrate

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Non-Arrhenius temperature dependence of the island density of one-dimensional Al chains on Si(100): A kinetic Monte Carlo study

Jason R. Albia; Marvin A. Albao

J. Vac. Sci. Technol. A 33, 021404 (2015) https://doi.org/10.1116/1.4905457

Abstract

View articletitled, Non-Arrhenius temperature dependence of the island density of one-dimensional Al chains on Si(100): A kinetic Monte Carlo study

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Composition and work function relationship in Os–Ru–W ternary alloys

Phillip D. Swartzentruber; Michael J. Detisch; T. John Balk

J. Vac. Sci. Technol. A 33, 021405 (2015) https://doi.org/10.1116/1.4905499

Abstract

View articletitled, Composition and work function relationship in Os–Ru–W ternary alloys

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Real-time x-ray studies of indium island growth kinetics

Alexander Demasi; Meliha G. Rainville; Karl F. Ludwig, Jr.

J. Vac. Sci. Technol. A 33, 021406 (2015) https://doi.org/10.1116/1.4905498

Abstract

View articletitled, Real-time x-ray studies of indium island growth kinetics

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CHORUS

Analysis of the surface density and reactivity of perfluorophenylazide and the impact on ligand immobilization

Gilad Zorn; David G. Castner; Anuradha Tyagi; Xin Wang; Hui Wang; Mingdi Yan

J. Vac. Sci. Technol. A 33, 021407 (2015) https://doi.org/10.1116/1.4907924

Abstract

View articletitled, Analysis of the surface density and reactivity of perfluorophenylazide and the impact on ligand immobilization

Supplementary Material

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Anomalous structural evolution and $\sqrt{3} \times \sqrt{3}$ reconstruction of a clean Si(111) surface observed after thermal desorption of thallium

Pavel Kocán; Ondřej Krejčí; Hiroshi Tochihara

J. Vac. Sci. Technol. A 33, 021408 (2015) https://doi.org/10.1116/1.4913199

Abstract

View articletitled, Anomalous structural evolution and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msqrt><mn>3</mn></msqrt><mo>×</mo><msqrt><mn>3</mn></msqrt></mrow></math> reconstruction of a clean Si(111) surface observed after thermal desorption of thallium

Supplementary Material

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Thin Films

Roll-to-roll sputtered Si-doped In₂O₃/Ag/Si-doped In₂O₃ multilayer as flexible and transparent anodes for flexible organic solar cells

Da-Young Cho; Yong-Hee Shin; Han-Ki Kim; Yong-Jin Noh; Seok-In Na; Kwun-Bum Chung

J. Vac. Sci. Technol. A 33, 021501 (2015) https://doi.org/10.1116/1.4901875

Abstract

View articletitled, Roll-to-roll sputtered Si-doped In2O3/Ag/Si-doped In2O3 multilayer as flexible and transparent anodes for flexible organic solar cells

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AuCl₃ chemical doping on defective graphene layer

Sooyeoun Oh; Gwangseok Yang; Jihyun Kim

J. Vac. Sci. Technol. A 33, 021502 (2015) https://doi.org/10.1116/1.4902968

Abstract

View articletitled, AuCl3 chemical doping on defective graphene layer

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Residual stress modeling of density modulated silicon thin films using finite element analysis

Erman Citirik; Taha Demirkan; Tansel Karabacak

J. Vac. Sci. Technol. A 33, 021503 (2015) https://doi.org/10.1116/1.4902953

Abstract

View articletitled, Residual stress modeling of density modulated silicon thin films using finite element analysis

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Stress engineering using low oxygen background pressures during Volmer–Weber growth of polycrystalline nickel films

Hang Z. Yu; Carl V. Thompson

J. Vac. Sci. Technol. A 33, 021504 (2015) https://doi.org/10.1116/1.4902957

Abstract

View articletitled, Stress engineering using low oxygen background pressures during Volmer–Weber growth of polycrystalline nickel films

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Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films

Jing Yang; Degang Zhao; Desheng Jiang; Ping Chen; Jianjun Zhu; Zongshun Liu; Lingcong Le; Xiaoguang He; Xiaojing Li; Y. T. Zhang; G. T. Du

J. Vac. Sci. Technol. A 33, 021505 (2015) https://doi.org/10.1116/1.4904035

Abstract

View articletitled, Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films

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Ultrathin polycrystalline 6,13-Bis(triisopropylsilylethynyl)-pentacene films

Min-Cherl Jung; Dongrong Zhang; Gueorgui O. Nikiforov; Michael V. Lee; Tae Joo Shin; Docheon Ahn; Han-Koo Lee; Jaeyoon Baik; Hyun-Joon Shin; Yabing Qi

J. Vac. Sci. Technol. A 33, 021506 (2015) https://doi.org/10.1116/1.4904063

Abstract

View articletitled, Ultrathin polycrystalline 6,13-Bis(triisopropylsilylethynyl)-pentacene films

Supplementary Material

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Electrical properties of ultrathin titanium dioxide films on silicon

Shankar Dutta; Leeladhar; Akhilesh Pandey; Om Prakash Thakur; Ramjay Pal

J. Vac. Sci. Technol. A 33, 021507 (2015) https://doi.org/10.1116/1.4904978

Abstract

View articletitled, Electrical properties of ultrathin titanium dioxide films on silicon

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Gallium codoping for high visible and near-infrared transmission in Al-doped ZnO thin films for industrial-scale applications

Ji Hun Park; Sang Ho Shin; Hyung Seok Yoon; Yongbae Jeon; Seunghun Lee; Yoongyu Lee; Sangwon Yoon

J. Vac. Sci. Technol. A 33, 021508 (2015) https://doi.org/10.1116/1.4904982

Abstract

View articletitled, Gallium codoping for high visible and near-infrared transmission in Al-doped ZnO thin films for industrial-scale applications

Supplementary Material

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Optical modeling of plasma-deposited ZnO films: Electron scattering at different length scales

Harm C. M. Knoops; Bas W. H. van de Loo; Sjoerd Smit; Mikhail V. Ponomarev; Jan-Willem Weber; Kashish Sharma; Wilhelmus M. M. Kessels; Mariadriana Creatore

J. Vac. Sci. Technol. A 33, 021509 (2015) https://doi.org/10.1116/1.4905086

Abstract

View articletitled, Optical modeling of plasma-deposited ZnO films: Electron scattering at different length scales

Supplementary Material

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Interdiffusion in nanometric Fe/Ni multilayer films

Jiaxing Liu; Katayun Barmak

J. Vac. Sci. Technol. A 33, 021510 (2015) https://doi.org/10.1116/1.4905465

Abstract

View articletitled, Interdiffusion in nanometric Fe/Ni multilayer films

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On the physical and chemical details of alumina atomic layer deposition: A combined experimental and numerical approach

Dongqing Pan; Lulu Ma; Yuanyuan Xie; Tien Chien Jen; Chris Yuan

J. Vac. Sci. Technol. A 33, 021511 (2015) https://doi.org/10.1116/1.4905726

Abstract

View articletitled, On the physical and chemical details of alumina atomic layer deposition: A combined experimental and numerical approach

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Highly (001) oriented L1-CoPt/TiN multilayer films on glass substrates with perpendicular magnetic anisotropy

Hongyu An; Qian Xie; Jian Wang; Takumi Sannomiya; Shinji Muraishi; Zhengjun Zhang; Yoshio Nakamura; Ji Shi

J. Vac. Sci. Technol. A 33, 021512 (2015) https://doi.org/10.1116/1.4905847

Abstract

View articletitled, Highly (001) oriented L1-CoPt/TiN multilayer films on glass substrates with perpendicular magnetic anisotropy

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Continuous production of nanostructured particles using spatial atomic layer deposition

J. Ruud van Ommen; Dirkjan Kooijman; Mark de Niet; Mojgan Talebi; Aristeidis Goulas

J. Vac. Sci. Technol. A 33, 021513 (2015) https://doi.org/10.1116/1.4905725

Abstract

View articletitled, Continuous production of nanostructured particles using spatial atomic layer deposition

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Method to control deposition rate instabilities—High power impulse magnetron sputtering deposition of TiO₂

Anna Kossoy; Rögnvaldur L. Magnusson; Tryggvi K. Tryggvason; Kristjan Leosson; Sveinn Olafsson

J. Vac. Sci. Technol. A 33, 021514 (2015) https://doi.org/10.1116/1.4905737

Abstract

View articletitled, Method to control deposition rate instabilities—High power impulse magnetron sputtering deposition of TiO2

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Parametric study of Y-doped BaZrO₃ thin film deposited via pulsed laser deposition

Ikwhang Chang; Jun Yeol Paek; Suk Won Cha

J. Vac. Sci. Technol. A 33, 021515 (2015) https://doi.org/10.1116/1.4905775

Abstract

View articletitled, Parametric study of Y-doped BaZrO3 thin film deposited via pulsed laser deposition

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Epitaxial niobium dioxide thin films by reactive-biased target ion beam deposition

Yuhan Wang; Ryan B. Comes; Salinporn Kittiwatanakul; Stuart A. Wolf; Jiwei Lu

J. Vac. Sci. Technol. A 33, 021516 (2015) https://doi.org/10.1116/1.4906143

Abstract

View articletitled, Epitaxial niobium dioxide thin films by reactive-biased target ion beam deposition

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Atomic layer deposition of tin oxide and zinc tin oxide using tetraethyltin and ozone

Ellis J. Warner; Forrest Johnson; Stephen A. Campbell; Wayne L. Gladfelter

J. Vac. Sci. Technol. A 33, 021517 (2015) https://doi.org/10.1116/1.4907562

Abstract

View articletitled, Atomic layer deposition of tin oxide and zinc tin oxide using tetraethyltin and ozone

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CHORUS

Deposition of highly textured AlN thin films by reactive high power impulse magnetron sputtering

Milena A. Moreira; Tobias Törndahl; Ilia Katardjiev; Tomas Kubart

J. Vac. Sci. Technol. A 33, 021518 (2015) https://doi.org/10.1116/1.4907874

Abstract

View articletitled, Deposition of highly textured AlN thin films by reactive high power impulse magnetron sputtering

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Pore radius fine tuning of a silica matrix (MCM-41) based on the synthesis of alumina nanolayers with different thicknesses by atomic layer deposition

Elena G. Zemtsova; Andrei Yu. Arbenin; Alexander F. Plotnikov; Vladimir M. Smirnov

J. Vac. Sci. Technol. A 33, 021519 (2015) https://doi.org/10.1116/1.4907989

Abstract

View articletitled, Pore radius fine tuning of a silica matrix (MCM-41) based on the synthesis of alumina nanolayers with different thicknesses by atomic layer deposition

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Effects of high-temperature thermal annealing on the electronic properties of In-Ga-Zn oxide thin films

Qin Li; Zhong Xiao Song; Fei Ma; Yan Huai Li; Ke Wei Xu

J. Vac. Sci. Technol. A 33, 021520 (2015) https://doi.org/10.1116/1.4908157

Abstract

View articletitled, Effects of high-temperature thermal annealing on the electronic properties of In-Ga-Zn oxide thin films

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Vacuum Science and Technology

Optimized MEMS Pirani sensor with increased pressure measurement sensitivity in the fine and rough vacuum regimes

Mario Grau; Friedemann Völklein; Andreas Meier; Christina Kunz; Ilia Kaufmann; Peter Woias

J. Vac. Sci. Technol. A 33, 021601 (2015) https://doi.org/10.1116/1.4902340

Abstract

View articletitled, Optimized MEMS Pirani sensor with increased pressure measurement sensitivity in the fine and rough vacuum regimes

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Application of electron stimulated desorption techniques to measure the isotherm and the mean residence time of hydrogen physisorbed on a metal surface

Ichiro Arakawa; Hideyuki Shimizu; Taku Kawarabuki; Koichiro Yamakawa; Takashi Miura

J. Vac. Sci. Technol. A 33, 021602 (2015) https://doi.org/10.1116/1.4904033

Abstract

View articletitled, Application of electron stimulated desorption techniques to measure the isotherm and the mean residence time of hydrogen physisorbed on a metal surface

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Outgassing rate measurements of stainless steel and polymers using the difference method

Katharina Battes; Christian Day; Volker Hauer

J. Vac. Sci. Technol. A 33, 021603 (2015) https://doi.org/10.1116/1.4905099

Abstract

View articletitled, Outgassing rate measurements of stainless steel and polymers using the difference method

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Brief Reports and Comments

Preparation of scanning tunneling microscopy tips using pulsed alternating current etching

Victor A. Valencia; Avesh A. Thaker; Jonathan Derouin; Damian N. Valencia; Rachael G. Farber; Dana A. Gebel; Daniel R. Killelea

J. Vac. Sci. Technol. A 33, 023001 (2015) https://doi.org/10.1116/1.4904347

Abstract

View articletitled, Preparation of scanning tunneling microscopy tips using pulsed alternating current etching

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Errata

Retraction: “Electrical behavior of atomic layer deposited high quality SiO₂ gate dielectric” [J. Vac. Sci. Technol., A 33, 01A107 (2015)]

S. K. Pradhan; E. K. Tanyi; J. R. Skuza; B. Xiao; A. K. Pradhan

J. Vac. Sci. Technol. A 33, 023401 (2015) https://doi.org/10.1116/1.4905778

Extract

View articletitled, Retraction: “Electrical behavior of atomic layer deposited high quality SiO2 gate dielectric” [J. Vac. Sci. Technol., A 33, 01A107 (2015)]

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