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Overview of atomic layer etching in the semiconductor industry
Letters
Comparison of defects in crystalline oxide semiconductor materials by electron spin resonance
J. Vac. Sci. Technol. A 33, 020601 (2015)
https://doi.org/10.1116/1.4904400
In-situ nitrogen plasma passivation of Al2O3/GaN interface states
J. Vac. Sci. Technol. A 33, 020602 (2015)
https://doi.org/10.1116/1.4905846
Effects of chemical intermixing on electrical and thermal contact conductances at metallized bismuth and antimony telluride interfaces
J. Vac. Sci. Technol. A 33, 020605 (2015)
https://doi.org/10.1116/1.4906573
Molecular beam epitaxy growth of SnO2 using a tin chemical precursor
J. Vac. Sci. Technol. A 33, 020606 (2015)
https://doi.org/10.1116/1.4913294
Review Articles
Electromagnetic effects in high-frequency large-area capacitive discharges: A review
J. Vac. Sci. Technol. A 33, 020801 (2015)
https://doi.org/10.1116/1.4907926
Overview of atomic layer etching in the semiconductor industry
J. Vac. Sci. Technol. A 33, 020802 (2015)
https://doi.org/10.1116/1.4913379
Interfaces
Plasmon-enhanced photocurrent of Ge-doped InGaO thin film transistors using silver nanoparticles
J. Vac. Sci. Technol. A 33, 021101 (2015)
https://doi.org/10.1116/1.4907729
Photovoltaics and Energy
In situ photoluminescence system for studying surface passivation in silicon heterojunction solar cells
J. Vac. Sci. Technol. A 33, 021201 (2015)
https://doi.org/10.1116/1.4902014
TiO2 nanotube arrays for photocatalysis: Effects of crystallinity, local order, and electronic structure
J. Vac. Sci. Technol. A 33, 021202 (2015)
https://doi.org/10.1116/1.4902350
Properties of reactively sputtered oxygenated cadmium sulfide (CdS:O) and their impact on CdTe solar cell performance
J. Vac. Sci. Technol. A 33, 021203 (2015)
https://doi.org/10.1116/1.4903214
Performance enhancement of GaN metal–semiconductor–metal ultraviolet photodetectors by insertion of ultrathin interfacial HfO2 layer
J. Vac. Sci. Technol. A 33, 021204 (2015)
https://doi.org/10.1116/1.4905735
13.2% efficiency double-hetero structure single-junction InGaAsN solar cells grown by MOVPE
J. Vac. Sci. Technol. A 33, 021205 (2015)
https://doi.org/10.1116/1.4906511
In situ process monitoring during multistage coevaporation of Cu2ZnSnS4 thin films
J. Vac. Sci. Technol. A 33, 021206 (2015)
https://doi.org/10.1116/1.4906787
Broadband low reflectance stepped-cone nanostructures by nanosphere lithography
J. Vac. Sci. Technol. A 33, 021207 (2015)
https://doi.org/10.1116/1.4913194
Plasma Science and Technology
Surface cleaning for enhanced adhesion to packaging surfaces: Effect of oxygen and ammonia plasma
J. Vac. Sci. Technol. A 33, 021301 (2015)
https://doi.org/10.1116/1.4902334
Effect of helium pressure and flow rate on microplasma propagation along hollow-core fibers
J. Vac. Sci. Technol. A 33, 021302 (2015)
https://doi.org/10.1116/1.4902967
Study on contact distortion during high aspect ratio contact SiO2 etching
J. Vac. Sci. Technol. A 33, 021303 (2015)
https://doi.org/10.1116/1.4901872
Investigation of electrochemical etch differences in AlGaAs heterostructures using Cl2 ion beam assisted etching
J. Vac. Sci. Technol. A 33, 021304 (2015)
https://doi.org/10.1116/1.4904211
Optical emission spectroscopic studies and comparisons of CH3F/CO2 and CH3F/O2 inductively coupled plasmas
J. Vac. Sci. Technol. A 33, 021305 (2015)
https://doi.org/10.1116/1.4904213
Formation of PtSi Schottky barrier MOSFETs using plasma etching
J. Vac. Sci. Technol. A 33, 021307 (2015)
https://doi.org/10.1116/1.4904361
Viable chemical approach for patterning nanoscale magnetoresistive random access memory
J. Vac. Sci. Technol. A 33, 021308 (2015)
https://doi.org/10.1116/1.4904215
Low damage etching method of low-k material with a neutral beam for interlayer dielectric of semiconductor device
J. Vac. Sci. Technol. A 33, 021309 (2015)
https://doi.org/10.1116/1.4905736
Nitrogen mass transfer models for plasma-based low-energy ion implantation
J. Vac. Sci. Technol. A 33, 021311 (2015)
https://doi.org/10.1116/1.4907713
Molecular dynamic simulation of damage formation at Si vertical walls by grazing incidence of energetic ions in gate etching processes
J. Vac. Sci. Technol. A 33, 021313 (2015)
https://doi.org/10.1116/1.4907724
Surfaces
Surface structure and surface kinetics of InN grown by plasma-assisted atomic layer epitaxy: A HREELS study
J. Vac. Sci. Technol. A 33, 021401 (2015)
https://doi.org/10.1116/1.4901873
First-principles study of nitric oxide oxidation on Pt(111) versus Pt overlayer on 3d transition metals
J. Vac. Sci. Technol. A 33, 021402 (2015)
https://doi.org/10.1116/1.4903225
Growth mechanism and optical properties of Ti thin films deposited onto fluorine-doped tin oxide glass substrate
J. Vac. Sci. Technol. A 33, 021403 (2015)
https://doi.org/10.1116/1.4904976
Non-Arrhenius temperature dependence of the island density of one-dimensional Al chains on Si(100): A kinetic Monte Carlo study
J. Vac. Sci. Technol. A 33, 021404 (2015)
https://doi.org/10.1116/1.4905457
Composition and work function relationship in Os–Ru–W ternary alloys
J. Vac. Sci. Technol. A 33, 021405 (2015)
https://doi.org/10.1116/1.4905499
Real-time x-ray studies of indium island growth kinetics
J. Vac. Sci. Technol. A 33, 021406 (2015)
https://doi.org/10.1116/1.4905498
Analysis of the surface density and reactivity of perfluorophenylazide and the impact on ligand immobilization
J. Vac. Sci. Technol. A 33, 021407 (2015)
https://doi.org/10.1116/1.4907924
Anomalous structural evolution and reconstruction of a clean Si(111) surface observed after thermal desorption of thallium
J. Vac. Sci. Technol. A 33, 021408 (2015)
https://doi.org/10.1116/1.4913199
Thin Films
Roll-to-roll sputtered Si-doped In2O3/Ag/Si-doped In2O3 multilayer as flexible and transparent anodes for flexible organic solar cells
J. Vac. Sci. Technol. A 33, 021501 (2015)
https://doi.org/10.1116/1.4901875
AuCl3 chemical doping on defective graphene layer
J. Vac. Sci. Technol. A 33, 021502 (2015)
https://doi.org/10.1116/1.4902968
Residual stress modeling of density modulated silicon thin films using finite element analysis
J. Vac. Sci. Technol. A 33, 021503 (2015)
https://doi.org/10.1116/1.4902953
Stress engineering using low oxygen background pressures during Volmer–Weber growth of polycrystalline nickel films
J. Vac. Sci. Technol. A 33, 021504 (2015)
https://doi.org/10.1116/1.4902957
Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films
J. Vac. Sci. Technol. A 33, 021505 (2015)
https://doi.org/10.1116/1.4904035
Ultrathin polycrystalline 6,13-Bis(triisopropylsilylethynyl)-pentacene films
J. Vac. Sci. Technol. A 33, 021506 (2015)
https://doi.org/10.1116/1.4904063
Electrical properties of ultrathin titanium dioxide films on silicon
J. Vac. Sci. Technol. A 33, 021507 (2015)
https://doi.org/10.1116/1.4904978
Gallium codoping for high visible and near-infrared transmission in Al-doped ZnO thin films for industrial-scale applications
J. Vac. Sci. Technol. A 33, 021508 (2015)
https://doi.org/10.1116/1.4904982
Optical modeling of plasma-deposited ZnO films: Electron scattering at different length scales
J. Vac. Sci. Technol. A 33, 021509 (2015)
https://doi.org/10.1116/1.4905086
Interdiffusion in nanometric Fe/Ni multilayer films
J. Vac. Sci. Technol. A 33, 021510 (2015)
https://doi.org/10.1116/1.4905465
On the physical and chemical details of alumina atomic layer deposition: A combined experimental and numerical approach
J. Vac. Sci. Technol. A 33, 021511 (2015)
https://doi.org/10.1116/1.4905726
Highly (001) oriented L1-CoPt/TiN multilayer films on glass substrates with perpendicular magnetic anisotropy
J. Vac. Sci. Technol. A 33, 021512 (2015)
https://doi.org/10.1116/1.4905847
Continuous production of nanostructured particles using spatial atomic layer deposition
J. Vac. Sci. Technol. A 33, 021513 (2015)
https://doi.org/10.1116/1.4905725
Method to control deposition rate instabilities—High power impulse magnetron sputtering deposition of TiO2
J. Vac. Sci. Technol. A 33, 021514 (2015)
https://doi.org/10.1116/1.4905737
Parametric study of Y-doped BaZrO3 thin film deposited via pulsed laser deposition
J. Vac. Sci. Technol. A 33, 021515 (2015)
https://doi.org/10.1116/1.4905775
Epitaxial niobium dioxide thin films by reactive-biased target ion beam deposition
J. Vac. Sci. Technol. A 33, 021516 (2015)
https://doi.org/10.1116/1.4906143
Atomic layer deposition of tin oxide and zinc tin oxide using tetraethyltin and ozone
J. Vac. Sci. Technol. A 33, 021517 (2015)
https://doi.org/10.1116/1.4907562
Deposition of highly textured AlN thin films by reactive high power impulse magnetron sputtering
J. Vac. Sci. Technol. A 33, 021518 (2015)
https://doi.org/10.1116/1.4907874
Effects of high-temperature thermal annealing on the electronic properties of In-Ga-Zn oxide thin films
J. Vac. Sci. Technol. A 33, 021520 (2015)
https://doi.org/10.1116/1.4908157
Vacuum Science and Technology
Optimized MEMS Pirani sensor with increased pressure measurement sensitivity in the fine and rough vacuum regimes
J. Vac. Sci. Technol. A 33, 021601 (2015)
https://doi.org/10.1116/1.4902340
Outgassing rate measurements of stainless steel and polymers using the difference method
J. Vac. Sci. Technol. A 33, 021603 (2015)
https://doi.org/10.1116/1.4905099
Brief Reports and Comments
Preparation of scanning tunneling microscopy tips using pulsed alternating current etching
J. Vac. Sci. Technol. A 33, 023001 (2015)
https://doi.org/10.1116/1.4904347
Errata
Retraction: “Electrical behavior of atomic layer deposited high quality SiO2 gate dielectric” [J. Vac. Sci. Technol., A 33, 01A107 (2015)]
J. Vac. Sci. Technol. A 33, 023401 (2015)
https://doi.org/10.1116/1.4905778
