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Overview of atomic layer etching in the semiconductor industry
Issues
March 2015
ISSN 0734-2101
EISSN 1520-8559
Letters
Comparison of defects in crystalline oxide semiconductor materials by electron spin resonance
J. Vac. Sci. Technol. A 33, 020601 (2015)
https://doi.org/10.1116/1.4904400
In-situ nitrogen plasma passivation of Al2O3/GaN interface states
J. Vac. Sci. Technol. A 33, 020602 (2015)
https://doi.org/10.1116/1.4905846
Effects of chemical intermixing on electrical and thermal contact conductances at metallized bismuth and antimony telluride interfaces
Devender; Rutvik J. Mehta; Kelly Lofgreen; Ravi Mahajan; Masashi Yamaguchi; Theodorian Borca-Tasciuc; Ganpati Ramanath
J. Vac. Sci. Technol. A 33, 020605 (2015)
https://doi.org/10.1116/1.4906573
Molecular beam epitaxy growth of SnO2 using a tin chemical precursor
J. Vac. Sci. Technol. A 33, 020606 (2015)
https://doi.org/10.1116/1.4913294
Review Articles
Electromagnetic effects in high-frequency large-area capacitive discharges: A review
J. Vac. Sci. Technol. A 33, 020801 (2015)
https://doi.org/10.1116/1.4907926
Overview of atomic layer etching in the semiconductor industry
Keren J. Kanarik; Thorsten Lill; Eric A. Hudson; Saravanapriyan Sriraman; Samantha Tan; Jeffrey Marks; Vahid Vahedi; Richard A. Gottscho
J. Vac. Sci. Technol. A 33, 020802 (2015)
https://doi.org/10.1116/1.4913379
Interfaces
Plasmon-enhanced photocurrent of Ge-doped InGaO thin film transistors using silver nanoparticles
J. Vac. Sci. Technol. A 33, 021101 (2015)
https://doi.org/10.1116/1.4907729
Photovoltaics and Energy
In situ photoluminescence system for studying surface passivation in silicon heterojunction solar cells
J. Vac. Sci. Technol. A 33, 021201 (2015)
https://doi.org/10.1116/1.4902014
TiO2 nanotube arrays for photocatalysis: Effects of crystallinity, local order, and electronic structure
J. Vac. Sci. Technol. A 33, 021202 (2015)
https://doi.org/10.1116/1.4902350
Properties of reactively sputtered oxygenated cadmium sulfide (CdS:O) and their impact on CdTe solar cell performance
Daniel M. Meysing; Colin A. Wolden; Michelle M. Griffith; Hasitha Mahabaduge; Joel Pankow; Matthew O. Reese; James M. Burst; William L. Rance; Teresa M. Barnes
J. Vac. Sci. Technol. A 33, 021203 (2015)
https://doi.org/10.1116/1.4903214
Performance enhancement of GaN metal–semiconductor–metal ultraviolet photodetectors by insertion of ultrathin interfacial HfO2 layer
J. Vac. Sci. Technol. A 33, 021204 (2015)
https://doi.org/10.1116/1.4905735
13.2% efficiency double-hetero structure single-junction InGaAsN solar cells grown by MOVPE
J. Vac. Sci. Technol. A 33, 021205 (2015)
https://doi.org/10.1116/1.4906511
In situ process monitoring during multistage coevaporation of Cu2ZnSnS4 thin films
J. Vac. Sci. Technol. A 33, 021206 (2015)
https://doi.org/10.1116/1.4906787
Broadband low reflectance stepped-cone nanostructures by nanosphere lithography
J. Vac. Sci. Technol. A 33, 021207 (2015)
https://doi.org/10.1116/1.4913194
Plasma Science and Technology
Surface cleaning for enhanced adhesion to packaging surfaces: Effect of oxygen and ammonia plasma
J. Vac. Sci. Technol. A 33, 021301 (2015)
https://doi.org/10.1116/1.4902334
Effect of helium pressure and flow rate on microplasma propagation along hollow-core fibers
J. Vac. Sci. Technol. A 33, 021302 (2015)
https://doi.org/10.1116/1.4902967
Study on contact distortion during high aspect ratio contact SiO2 etching
J. Vac. Sci. Technol. A 33, 021303 (2015)
https://doi.org/10.1116/1.4901872
Investigation of electrochemical etch differences in AlGaAs heterostructures using Cl2 ion beam assisted etching
J. Vac. Sci. Technol. A 33, 021304 (2015)
https://doi.org/10.1116/1.4904211
Optical emission spectroscopic studies and comparisons of CH3F/CO2 and CH3F/O2 inductively coupled plasmas
J. Vac. Sci. Technol. A 33, 021305 (2015)
https://doi.org/10.1116/1.4904213
Comparison of surface vacuum ultraviolet emissions with resonance level number densities. II. Rare-gas plasmas and Ar-molecular gas mixtures
John B. Boffard; Chun C. Lin; Shicong Wang; Amy E. Wendt; Cody Culver; Svetlana Radovanov; Harold Persing
J. Vac. Sci. Technol. A 33, 021306 (2015)
https://doi.org/10.1116/1.4904036
Formation of PtSi Schottky barrier MOSFETs using plasma etching
J. Vac. Sci. Technol. A 33, 021307 (2015)
https://doi.org/10.1116/1.4904361
Viable chemical approach for patterning nanoscale magnetoresistive random access memory
J. Vac. Sci. Technol. A 33, 021308 (2015)
https://doi.org/10.1116/1.4904215
Low damage etching method of low-k material with a neutral beam for interlayer dielectric of semiconductor device
J. Vac. Sci. Technol. A 33, 021309 (2015)
https://doi.org/10.1116/1.4905736
Nitrogen mass transfer models for plasma-based low-energy ion implantation
J. Vac. Sci. Technol. A 33, 021311 (2015)
https://doi.org/10.1116/1.4907713
Molecular dynamic simulation of damage formation at Si vertical walls by grazing incidence of energetic ions in gate etching processes
J. Vac. Sci. Technol. A 33, 021313 (2015)
https://doi.org/10.1116/1.4907724
Surfaces
Surface structure and surface kinetics of InN grown by plasma-assisted atomic layer epitaxy: A HREELS study
J. Vac. Sci. Technol. A 33, 021401 (2015)
https://doi.org/10.1116/1.4901873
First-principles study of nitric oxide oxidation on Pt(111) versus Pt overlayer on 3d transition metals
J. Vac. Sci. Technol. A 33, 021402 (2015)
https://doi.org/10.1116/1.4903225
Growth mechanism and optical properties of Ti thin films deposited onto fluorine-doped tin oxide glass substrate
J. Vac. Sci. Technol. A 33, 021403 (2015)
https://doi.org/10.1116/1.4904976
Non-Arrhenius temperature dependence of the island density of one-dimensional Al chains on Si(100): A kinetic Monte Carlo study
J. Vac. Sci. Technol. A 33, 021404 (2015)
https://doi.org/10.1116/1.4905457
Composition and work function relationship in Os–Ru–W ternary alloys
J. Vac. Sci. Technol. A 33, 021405 (2015)
https://doi.org/10.1116/1.4905499
Real-time x-ray studies of indium island growth kinetics
J. Vac. Sci. Technol. A 33, 021406 (2015)
https://doi.org/10.1116/1.4905498
Analysis of the surface density and reactivity of perfluorophenylazide and the impact on ligand immobilization
J. Vac. Sci. Technol. A 33, 021407 (2015)
https://doi.org/10.1116/1.4907924
Anomalous structural evolution and reconstruction of a clean Si(111) surface observed after thermal desorption of thallium
J. Vac. Sci. Technol. A 33, 021408 (2015)
https://doi.org/10.1116/1.4913199
Thin Films
Roll-to-roll sputtered Si-doped In2O3/Ag/Si-doped In2O3 multilayer as flexible and transparent anodes for flexible organic solar cells
J. Vac. Sci. Technol. A 33, 021501 (2015)
https://doi.org/10.1116/1.4901875
Residual stress modeling of density modulated silicon thin films using finite element analysis
J. Vac. Sci. Technol. A 33, 021503 (2015)
https://doi.org/10.1116/1.4902953
Stress engineering using low oxygen background pressures during Volmer–Weber growth of polycrystalline nickel films
J. Vac. Sci. Technol. A 33, 021504 (2015)
https://doi.org/10.1116/1.4902957
Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films
Jing Yang; Degang Zhao; Desheng Jiang; Ping Chen; Jianjun Zhu; Zongshun Liu; Lingcong Le; Xiaoguang He; Xiaojing Li; Y. T. Zhang; G. T. Du
J. Vac. Sci. Technol. A 33, 021505 (2015)
https://doi.org/10.1116/1.4904035
Ultrathin polycrystalline 6,13-Bis(triisopropylsilylethynyl)-pentacene films
Min-Cherl Jung; Dongrong Zhang; Gueorgui O. Nikiforov; Michael V. Lee; Tae Joo Shin; Docheon Ahn; Han-Koo Lee; Jaeyoon Baik; Hyun-Joon Shin; Yabing Qi
J. Vac. Sci. Technol. A 33, 021506 (2015)
https://doi.org/10.1116/1.4904063
Electrical properties of ultrathin titanium dioxide films on silicon
J. Vac. Sci. Technol. A 33, 021507 (2015)
https://doi.org/10.1116/1.4904978
Gallium codoping for high visible and near-infrared transmission in Al-doped ZnO thin films for industrial-scale applications
J. Vac. Sci. Technol. A 33, 021508 (2015)
https://doi.org/10.1116/1.4904982
Optical modeling of plasma-deposited ZnO films: Electron scattering at different length scales
Harm C. M. Knoops; Bas W. H. van de Loo; Sjoerd Smit; Mikhail V. Ponomarev; Jan-Willem Weber; Kashish Sharma; Wilhelmus M. M. Kessels; Mariadriana Creatore
J. Vac. Sci. Technol. A 33, 021509 (2015)
https://doi.org/10.1116/1.4905086
On the physical and chemical details of alumina atomic layer deposition: A combined experimental and numerical approach
J. Vac. Sci. Technol. A 33, 021511 (2015)
https://doi.org/10.1116/1.4905726
Continuous production of nanostructured particles using spatial atomic layer deposition
J. Vac. Sci. Technol. A 33, 021513 (2015)
https://doi.org/10.1116/1.4905725
Method to control deposition rate instabilities—High power impulse magnetron sputtering deposition of TiO2
J. Vac. Sci. Technol. A 33, 021514 (2015)
https://doi.org/10.1116/1.4905737
Parametric study of Y-doped BaZrO3 thin film deposited via pulsed laser deposition
J. Vac. Sci. Technol. A 33, 021515 (2015)
https://doi.org/10.1116/1.4905775
Epitaxial niobium dioxide thin films by reactive-biased target ion beam deposition
J. Vac. Sci. Technol. A 33, 021516 (2015)
https://doi.org/10.1116/1.4906143
Atomic layer deposition of tin oxide and zinc tin oxide using tetraethyltin and ozone
J. Vac. Sci. Technol. A 33, 021517 (2015)
https://doi.org/10.1116/1.4907562
Deposition of highly textured AlN thin films by reactive high power impulse magnetron sputtering
J. Vac. Sci. Technol. A 33, 021518 (2015)
https://doi.org/10.1116/1.4907874
Effects of high-temperature thermal annealing on the electronic properties of In-Ga-Zn oxide thin films
J. Vac. Sci. Technol. A 33, 021520 (2015)
https://doi.org/10.1116/1.4908157
Vacuum Science and Technology
Optimized MEMS Pirani sensor with increased pressure measurement sensitivity in the fine and rough vacuum regimes
J. Vac. Sci. Technol. A 33, 021601 (2015)
https://doi.org/10.1116/1.4902340
Outgassing rate measurements of stainless steel and polymers using the difference method
J. Vac. Sci. Technol. A 33, 021603 (2015)
https://doi.org/10.1116/1.4905099
Brief Reports and Comments
Errata
Retraction: “Electrical behavior of atomic layer deposited high quality SiO2 gate dielectric” [J. Vac. Sci. Technol., A 33, 01A107 (2015)]
J. Vac. Sci. Technol. A 33, 023401 (2015)
https://doi.org/10.1116/1.4905778
Machine-learning-enabled on-the-fly analysis of RHEED patterns during thin film deposition by molecular beam epitaxy
Tiffany C. Kaspar, Sarah Akers, et al.
Molecular beam epitaxy of boron arsenide layers
Tin S. Cheng, Jonathan Bradford, et al.
Low-resistivity molybdenum obtained by atomic layer deposition
Kees van der Zouw, Bernhard Y. van der Wel, et al.