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Issues
January 2014
ISSN 0734-2101
EISSN 1520-8559
In this Issue
Letters
Review Articles
In situ synchrotron based x-ray techniques as monitoring tools for atomic layer deposition
J. Vac. Sci. Technol. A 32, 010801 (2014)
https://doi.org/10.1116/1.4851716
Reactor concepts for atomic layer deposition on agitated particles: A review
J. Vac. Sci. Technol. A 32, 010802 (2014)
https://doi.org/10.1116/1.4851676
Atomic Layer Deposition (ALD)
Vacuum sealing using atomic layer deposition of Al2O3 at 250 °C
J. Vac. Sci. Technol. A 32, 01A101 (2014)
https://doi.org/10.1116/1.4820240
Adhesion testing of atomic layer deposited TiO2 on glass substrate by the use of embedded SiO2 microspheres
J. Vac. Sci. Technol. A 32, 01A102 (2014)
https://doi.org/10.1116/1.4827197
HfO2 dielectric film growth directly on graphene by H2O-based atomic layer deposition
J. Vac. Sci. Technol. A 32, 01A103 (2014)
https://doi.org/10.1116/1.4828361
Kinetic study on hot-wire-assisted atomic layer deposition of nickel thin films
J. Vac. Sci. Technol. A 32, 01A104 (2014)
https://doi.org/10.1116/1.4829361
Hybrid inorganic–organic superlattice structures with atomic layer deposition/molecular layer deposition
J. Vac. Sci. Technol. A 32, 01A105 (2014)
https://doi.org/10.1116/1.4831751
Role of plasma enhanced atomic layer deposition reactor wall conditions on radical and ion substrate fluxes
J. Vac. Sci. Technol. A 32, 01A106 (2014)
https://doi.org/10.1116/1.4831896
Growth mode evolution of hafnium oxide by atomic layer deposition
J. Vac. Sci. Technol. A 32, 01A109 (2014)
https://doi.org/10.1116/1.4832224
Numerical modeling of carrier gas flow in atomic layer deposition vacuum reactor: A comparative study of lattice Boltzmann models
J. Vac. Sci. Technol. A 32, 01A110 (2014)
https://doi.org/10.1116/1.4833561
X-ray reflectivity characterization of atomic layer deposition Al2O3/TiO2 nanolaminates with ultrathin bilayers
J. Vac. Sci. Technol. A 32, 01A111 (2014)
https://doi.org/10.1116/1.4833556
Growth behavior and properties of atomic layer deposited tin oxide on silicon from novel tin(II)acetylacetonate precursor and ozone
J. Vac. Sci. Technol. A 32, 01A112 (2014)
https://doi.org/10.1116/1.4837915
Atomic layer deposition of bismuth oxide using Bi(OCMe2iPr)3 and H2O
J. Vac. Sci. Technol. A 32, 01A113 (2014)
https://doi.org/10.1116/1.4840835
Waterless TiO2 atomic layer deposition using titanium tetrachloride and titanium tetraisopropoxide
J. Vac. Sci. Technol. A 32, 01A114 (2014)
https://doi.org/10.1116/1.4839015
Vibration atomic layer deposition for conformal nanoparticle coating
J. Vac. Sci. Technol. A 32, 01A115 (2014)
https://doi.org/10.1116/1.4845735
On the reliability of nanoindentation hardness of Al2O3 films grown on Si-wafer by atomic layer deposition
J. Vac. Sci. Technol. A 32, 01A116 (2014)
https://doi.org/10.1116/1.4842655
Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
J. Vac. Sci. Technol. A 32, 01A117 (2014)
https://doi.org/10.1116/1.4842675
Atomic layer deposition of HfxAlyCz as a work function material in metal gate MOS devices
Albert Lee; Nobi Fuchigami; Divya Pisharoty; Zhendong Hong; Ed Haywood; Amol Joshi; Salil Mujumdar; Ashish Bodke; Olov Karlsson; Hoon Kim; Kisik Choi; Paul Besser
J. Vac. Sci. Technol. A 32, 01A118 (2014)
https://doi.org/10.1116/1.4843535
Atomic layer deposition of molybdenum oxide using bis(tert-butylimido)bis(dimethylamido) molybdenum
J. Vac. Sci. Technol. A 32, 01A119 (2014)
https://doi.org/10.1116/1.4843595
In situ reaction mechanism studies on the Ti(NMe2)2(OiPr)2-D2O and Ti(OiPr)3[MeC(NiPr)2]-D2O atomic layer deposition processes
J. Vac. Sci. Technol. A 32, 01A121 (2014)
https://doi.org/10.1116/1.4843496
Conduction processes in metal–insulator–metal diodes with Ta2O5 and Nb2O5 insulators deposited by atomic layer deposition
J. Vac. Sci. Technol. A 32, 01A122 (2014)
https://doi.org/10.1116/1.4843555
Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
Shaoren Deng; Sammy W. Verbruggen; Silvia Lenaerts; Johan A. Martens; Sven Van den Berghe; Kilian Devloo-Casier; Wouter Devulder; Jolien Dendooven; Davy Deduytsche; Christophe Detavernier
J. Vac. Sci. Technol. A 32, 01A123 (2014)
https://doi.org/10.1116/1.4847976
Surface modification of nitrogen-doped carbon nanotubes by ozone via atomic layer deposition
J. Vac. Sci. Technol. A 32, 01A124 (2014)
https://doi.org/10.1116/1.4847995
Structure in multilayer films of zinc sulfide and copper sulfide via atomic layer deposition
J. Vac. Sci. Technol. A 32, 01A125 (2014)
https://doi.org/10.1116/1.4847956
Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition
Wenyan Wan; Xinhong Cheng; Duo Cao; Li Zheng; Dawei Xu; Zhongjian Wang; Chao Xia; Lingyan Shen; Yuehui Yu; DaShen Shen
J. Vac. Sci. Technol. A 32, 01A127 (2014)
https://doi.org/10.1116/1.4850175
Atmospheric pressure spatial atomic layer deposition web coating with in situ monitoring of film thickness
J. Vac. Sci. Technol. A 32, 01A130 (2014)
https://doi.org/10.1116/1.4850176
Self-forming Al oxide barrier for nanoscale Cu interconnects created by hybrid atomic layer deposition of Cu–Al alloy
J. Vac. Sci. Technol. A 32, 01A131 (2014)
https://doi.org/10.1116/1.4845595
Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
Khalil El Hajjam; Nicolas Baboux; Francis Calmon; Abdelkader Souifi; Olivier Poncelet; Laurent A. Francis; Serge Ecoffey; Dominique Drouin
J. Vac. Sci. Technol. A 32, 01A132 (2014)
https://doi.org/10.1116/1.4853075
Low-temperature etching of silicon oxide and silicon nitride with hydrogen fluoride
Thorsten Lill, Mingmei Wang, et al.
Surface passivation approaches for silicon, germanium, and III–V semiconductors
Roel J. Theeuwes, Wilhelmus M. M. Kessels, et al.
Atomic layer deposition of nanofilms on porous polymer substrates: Strategies for success
Brian C. Welch, Jeanne Casetta, et al.