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Growth and properties of single crystal TiN films deposited by reactive magnetron sputtering
J. Vac. Sci. Technol. A 3, 303–307 (1985)
https://doi.org/10.1116/1.573255
Adhesion of titanium nitride coatings on high‐speed steels
J. Vac. Sci. Technol. A 3, 308–315 (1985)
https://doi.org/10.1116/1.573256
A GaP decomposition source for producing a dimer phosphorus molecular beam free of gallium and tetramer phosphorus
J. Vac. Sci. Technol. A 3, 316–318 (1985)
https://doi.org/10.1116/1.573257
Structural study of the diamond phase carbon films produced by ionized deposition
J. Vac. Sci. Technol. A 3, 319–323 (1985)
https://doi.org/10.1116/1.573258
Chemical changes in chromium silicide thin films as a result of laser trimming as determined by SAM and XPS
J. Vac. Sci. Technol. A 3, 324–330 (1985)
https://doi.org/10.1116/1.573259
Thickness of natural oxide films determined by AES and XPS with/without sputtering
J. Vac. Sci. Technol. A 3, 331–335 (1985)
https://doi.org/10.1116/1.573260
Temperature dependent formation of surface undulations in explosively crystallized films
J. Vac. Sci. Technol. A 3, 336–338 (1985)
https://doi.org/10.1116/1.573261
Surface chemistry of phosphorus‐containing molecules: I. Interaction of PH3 with Rh(100) and the effect of preadsorbed phosphorus
J. Vac. Sci. Technol. A 3, 339–345 (1985)
https://doi.org/10.1116/1.573217
Surface characterization of a Zr–V–Fe getter by XPS‐SIMS—activation process and D2O exposure
J. Vac. Sci. Technol. A 3, 346–350 (1985)
https://doi.org/10.1116/1.573218
Surface sputtering rate reduction and its effect on SIMS depth profiling in cesium‐ion‐bombarded GaAs
J. Vac. Sci. Technol. A 3, 351–355 (1985)
https://doi.org/10.1116/1.573219
Analysis of carbon and oxygen in GaAs using a secondary ion mass spectrometer equipped with a 20 K‐cryopanel pumping system
J. Vac. Sci. Technol. A 3, 356–360 (1985)
https://doi.org/10.1116/1.573220
Auger and core level electron energy loss studies of (Y2O3)m(ZrO2)1−m single crystal surfaces
J. Vac. Sci. Technol. A 3, 373–379 (1985)
https://doi.org/10.1116/1.573223
Extension of the Heitler–London approach to adsorption problems: ESD of CO–W(100)
J. Vac. Sci. Technol. A 3, 380–382 (1985)
https://doi.org/10.1116/1.573224
Vortex trapping in Pb‐alloy Josephson junctions induced by strong sputtering of the base electrode
J. Vac. Sci. Technol. A 3, 383–386 (1985)
https://doi.org/10.1116/1.573225
AES analysis of the growth mechanism of metal layers on metal surfaces
J. Vac. Sci. Technol. A 3, 387–391 (1985)
https://doi.org/10.1116/1.573226
Processing and characterization of LaB6‐coated hairpin cathodes
J. Vac. Sci. Technol. A 3, 398–402 (1985)
https://doi.org/10.1116/1.573228
Coevaporation with a rate control system based on a quadrupole mass spectrometer
J. Vac. Sci. Technol. A 3, 403–407 (1985)
https://doi.org/10.1116/1.573229
Design considerations for simple gas dosers in surface science applications
J. Vac. Sci. Technol. A 3, 408–411 (1985)
https://doi.org/10.1116/1.573230
Simplified variably shaped beam for electron beam lithography
J. Vac. Sci. Technol. A 3, 424–429 (1985)
https://doi.org/10.1116/1.573233
What more can be done with XPS? Highly informative but underused approaches to XPS data collection and analysis
Donald R. Baer, Merve Taner Camci, et al.
Low-resistivity molybdenum obtained by atomic layer deposition
Kees van der Zouw, Bernhard Y. van der Wel, et al.
Perspective on improving the quality of surface and material data analysis in the scientific literature with a focus on x-ray photoelectron spectroscopy (XPS)
George H. Major, Joshua W. Pinder, et al.