Skip Nav Destination

Issues

Select Year

Issue

Near‐surface microstructural modifications in low energy hydrogen ion bombarded silicon

J. K. G. Panitz; D. J. Sharp; C. R. Hills

J. Vac. Sci. Technol. A 3, 1–5 (1985) https://doi.org/10.1116/1.573201

Abstract

View articletitled, Near‐surface microstructural modifications in low energy hydrogen ion bombarded silicon

Open the PDF for in another window

XPS studies of water and oxygen on iron‐sputtered natural ilmenite

P. D. Schulze; T. E. Neil; S. L. Shaffer; R. W. Smith; D. S. McKay

J. Vac. Sci. Technol. A 3, 6–9 (1985) https://doi.org/10.1116/1.573248

Abstract

View articletitled, XPS studies of water and oxygen on iron‐sputtered natural ilmenite

Open the PDF for in another window

Magnetron sputtering sources for ferromagnetic material

B. Window; F. Sharples

J. Vac. Sci. Technol. A 3, 10–13 (1985) https://doi.org/10.1116/1.573178

Abstract

View articletitled, Magnetron sputtering sources for ferromagnetic material

Open the PDF for in another window

An axial‐emission magnetron ionization gauge

J. Z. Chen; C. D. Suen; Y. H. Kuo

J. Vac. Sci. Technol. A 3, 14–17 (1985) https://doi.org/10.1116/1.573187

Abstract

View articletitled, An axial‐emission magnetron ionization gauge

Open the PDF for in another window

Current characteristics of a high voltage 60 Hz crossed‐field discharge

Elizabeth E. Ames; Michael B. Silevitch; Peter Graneau

J. Vac. Sci. Technol. A 3, 18–21 (1985) https://doi.org/10.1116/1.573197

Abstract

View articletitled, Current characteristics of a high voltage 60 Hz crossed‐field discharge

Open the PDF for in another window

Interband optical absorption in thin semiconducting quantum well wires

Hassan H. Hassan; Harold N. Spector

J. Vac. Sci. Technol. A 3, 22–28 (1985) https://doi.org/10.1116/1.573208

Abstract

View articletitled, Interband optical absorption in thin semiconducting quantum well wires

Open the PDF for in another window

Electrical properties of D–T gas and liquid

P. C. Souers; E. M. Fearon; R. T. Tsugawa

J. Vac. Sci. Technol. A 3, 29–33 (1985) https://doi.org/10.1116/1.573241

Abstract

View articletitled, Electrical properties of D–T gas and liquid

Open the PDF for in another window

Supply and recovery of hydrogen isotopes in high vacuum systems using ZrNi hydride getter pumps

K. Nakamura; T. Hoshi

J. Vac. Sci. Technol. A 3, 34–38 (1985) https://doi.org/10.1116/1.573242

Abstract

View articletitled, Supply and recovery of hydrogen isotopes in high vacuum systems using ZrNi hydride getter pumps

Open the PDF for in another window

Gas concentration nonuniformity and kinetic anisotropy in high vacuum

Andrzej Horodeński

J. Vac. Sci. Technol. A 3, 39–44 (1985) https://doi.org/10.1116/1.573243

Abstract

View articletitled, Gas concentration nonuniformity and kinetic anisotropy in high vacuum

Open the PDF for in another window

Book Review: Modern crystallography III—Crystal growth

Klaus J. Bachmann

J. Vac. Sci. Technol. A 3, 45–46 (1985) https://doi.org/10.1116/1.573244

View articletitled, Book Review: Modern crystallography III—Crystal growth

Open the PDF for in another window

Molecular beam epitaxy of alloys and superlattices involving mercury

J. P. Faurie; M. Boukerche; J. Reno; S. Sivananthan; C. Hsu

J. Vac. Sci. Technol. A 3, 55–59 (1985) https://doi.org/10.1116/1.573245

Abstract

View articletitled, Molecular beam epitaxy of alloys and superlattices involving mercury

Open the PDF for in another window

MBE growth of CdTe, Hg_1−xCd_xTe, and multilayer structures: Achievements, problems, and prospects

R. F. C. Farrow

J. Vac. Sci. Technol. A 3, 60–66 (1985) https://doi.org/10.1116/1.573246

Abstract

View articletitled, MBE growth of CdTe, Hg1−xCdxTe, and multilayer structures: Achievements, problems, and prospects

Open the PDF for in another window

Growth and characterization of MBE grown HgTe–CdTe superlattices

P. P. Chow; D. Johnson

J. Vac. Sci. Technol. A 3, 67–70 (1985) https://doi.org/10.1116/1.573247

Abstract

View articletitled, Growth and characterization of MBE grown HgTe–CdTe superlattices

Open the PDF for in another window

Properties and applications of CdTe/sapphire epilayers grown by molecular beam epitaxy

T. H. Myers; N. C. Giles‐Taylor; R. W. Yanka; R. N. Bicknell; J. W. Cook, Jr.; J. F. Schetzina; S. R. Jost; H. S. Cole; H. H. Woodbury

J. Vac. Sci. Technol. A 3, 71–75 (1985) https://doi.org/10.1116/1.573249

Abstract

View articletitled, Properties and applications of CdTe/sapphire epilayers grown by molecular beam epitaxy

Open the PDF for in another window

Photoluminescence of CdTe: A comparison of bulk and epitaxial material

N. C. Giles‐Taylor; R. N. Bicknell; D. K. Blanks; T. H. Myers; J. F. Schetzina

J. Vac. Sci. Technol. A 3, 76–82 (1985) https://doi.org/10.1116/1.573250

Abstract

View articletitled, Photoluminescence of CdTe: A comparison of bulk and epitaxial material

Open the PDF for in another window

Overview of microstructural defect development in interfacial regions of HgCdTe and CdTe layers grown on CdTe and alternate substrates

G. R. Woolhouse; T. J. Magee; H. A. Kawayoshi; C. S. H. Leung; R. D. Ormond

J. Vac. Sci. Technol. A 3, 83–88 (1985) https://doi.org/10.1116/1.573251

Abstract

View articletitled, Overview of microstructural defect development in interfacial regions of HgCdTe and CdTe layers grown on CdTe and alternate substrates

Open the PDF for in another window

MOCVD growth of CdTe and HgCdTe

J. L. Schmit

J. Vac. Sci. Technol. A 3, 89–92 (1985) https://doi.org/10.1116/1.573252

Abstract

View articletitled, MOCVD growth of CdTe and HgCdTe

Open the PDF for in another window

Summary Abstract: Liquid‐phase epitaxial growth of (HgCd)Te on Cd(TeSe) substrates

R. A. Wood; J. L. Schmit; H. K. Chung; T. J. Magee; G. R. Woolhouse

J. Vac. Sci. Technol. A 3, 93–94 (1985) https://doi.org/10.1116/1.573253

View articletitled, Summary Abstract: Liquid‐phase epitaxial growth of (HgCd)Te on Cd(TeSe) substrates

Open the PDF for in another window

THM, a breakthrough in Hg_1−xCd_xTe bulk metallurgy

R. Triboulet; T. Nguyen Duy; A. Durand

J. Vac. Sci. Technol. A 3, 95–99 (1985) https://doi.org/10.1116/1.573254

Abstract

View articletitled, THM, a breakthrough in Hg1−xCdxTe bulk metallurgy

Open the PDF for in another window

Growth of large diameter (Hg,Cd)Te crystals by incremental quenching

Luigi Colombo; A. J. Syllaios; R. W. Perlaky; M. J. Brau

J. Vac. Sci. Technol. A 3, 100–104 (1985) https://doi.org/10.1116/1.573176

Abstract

View articletitled, Growth of large diameter (Hg,Cd)Te crystals by incremental quenching

Open the PDF for in another window

Effects influencing the structural integrity of semiconductors and their alloys

Arden Sher; An‐Ban Chen; W. E. Spicer; C‐K Shih

J. Vac. Sci. Technol. A 3, 105–111 (1985) https://doi.org/10.1116/1.573177

Abstract

View articletitled, Effects influencing the structural integrity of semiconductors and their alloys

Open the PDF for in another window

Crystal growth of Cd_1−xZn_xTe and its use as a superior substrate for LPE growth of Hg_0.8Cd_0.2Te

S. L. Bell; S. Sen

J. Vac. Sci. Technol. A 3, 112–115 (1985) https://doi.org/10.1116/1.573179

Abstract

View articletitled, Crystal growth of Cd1−xZnxTe and its use as a superior substrate for LPE growth of Hg0.8Cd0.2Te

Open the PDF for in another window

LPE growth conditions for Cd_1−xMn_xTe and Hg_1−xMn_xTe epitaxial layers

P. Becla; P. A. Wolff; R. L. Aggarwal; S. Y. Yuen

J. Vac. Sci. Technol. A 3, 116–118 (1985) https://doi.org/10.1116/1.573180

Abstract

View articletitled, LPE growth conditions for Cd1−xMnxTe and Hg1−xMnxTe epitaxial layers

Open the PDF for in another window

Pressure controlled VPE growth of quaternary Hg_1−x−yCd_xMn_yTe epitaxial layers

P. Becla; P. A. Wolff; R. L. Aggarwal; S. Y. Yuen; R. R. Galazka

J. Vac. Sci. Technol. A 3, 119–123 (1985) https://doi.org/10.1116/1.573181

Abstract

View articletitled, Pressure controlled VPE growth of quaternary Hg1−x−yCdxMnyTe epitaxial layers

Open the PDF for in another window

Surface and interface properties of Hg_1−xMn_xSe

A. Franciosi; R. Reifenberger; J. K. Furdyna

J. Vac. Sci. Technol. A 3, 124–127 (1985) https://doi.org/10.1116/1.573182

Abstract

View articletitled, Surface and interface properties of Hg1−xMnxSe

Open the PDF for in another window

An overview on defect studies in MCT

D. T. Cheung

J. Vac. Sci. Technol. A 3, 128–130 (1985) https://doi.org/10.1116/1.573183

Abstract

View articletitled, An overview on defect studies in MCT

Open the PDF for in another window

Status of point defects in HgCdTe

C. E. Jones; K. James; J. Merz; R. Braunstein; M. Burd; M. Eetemadi; S. Hutton; J. Drumheller

J. Vac. Sci. Technol. A 3, 131–137 (1985) https://doi.org/10.1116/1.573184

Abstract

View articletitled, Status of point defects in HgCdTe

Open the PDF for in another window

Study of mercury cadmium telluride (MCT) surfaces by automatic spectroscopic ellipsometry (ASE) and by electrolyte electroreflectance (EER)

Paul M. Raccah; U. Lee; Sevilay Ugur; Da Zhong Xue; L. L. Abels; J. W. Garland

J. Vac. Sci. Technol. A 3, 138–142 (1985) https://doi.org/10.1116/1.573185

Abstract

View articletitled, Study of mercury cadmium telluride (MCT) surfaces by automatic spectroscopic ellipsometry (ASE) and by electrolyte electroreflectance (EER)

Open the PDF for in another window

The effect of low temperature annealing on defects, impurities, and electrical properties of (Hg,Cd)Te

H. F. Schaake; J. H. Tregilgas; J. D. Beck; M. A. Kinch; B. E. Gnade

J. Vac. Sci. Technol. A 3, 143–149 (1985) https://doi.org/10.1116/1.573186

Abstract

View articletitled, The effect of low temperature annealing on defects, impurities, and electrical properties of (Hg,Cd)Te

Open the PDF for in another window

Type conversion of (Hg,Cd)Te induced by the redistribution of residual acceptor impurities

J. Tregilgas; J. Beck; B. Gnade

J. Vac. Sci. Technol. A 3, 150–152 (1985) https://doi.org/10.1116/1.573188

Abstract

View articletitled, Type conversion of (Hg,Cd)Te induced by the redistribution of residual acceptor impurities

Open the PDF for in another window

The behavior of oxygen in HgCdTe

M. Yoshikawa; S. Ueda; K. Maruyama; H. Takigawa

J. Vac. Sci. Technol. A 3, 153–155 (1985) https://doi.org/10.1116/1.573189

Abstract

View articletitled, The behavior of oxygen in HgCdTe

Open the PDF for in another window

Surface segregation of impurities induced by photon absorption in CdTe and (Hg,Cd)Te

J. Tregilgas; B. Gnade

J. Vac. Sci. Technol. A 3, 156–159 (1985) https://doi.org/10.1116/1.573190

Abstract

View articletitled, Surface segregation of impurities induced by photon absorption in CdTe and (Hg,Cd)Te

Open the PDF for in another window

Photoplasticity and fracture in HgCdTe

Joseph Pellegrino; J. M. Galligan

J. Vac. Sci. Technol. A 3, 160–162 (1985) https://doi.org/10.1116/1.573191

Abstract

View articletitled, Photoplasticity and fracture in HgCdTe

Open the PDF for in another window

Cathodoluminescence of HgCdTe and CdTe on CdTe and sapphire

L. O. Bubulac; W. E. Tennant; D. D. Edwall; E. R. Gertner; J. C. Robinson

J. Vac. Sci. Technol. A 3, 163–170 (1985) https://doi.org/10.1116/1.573192

Abstract

View articletitled, Cathodoluminescence of HgCdTe and CdTe on CdTe and sapphire

Open the PDF for in another window

Indium ion implantation in Hg_0.78Cd_0.22Te/CdTe

G. L. Destefanis

J. Vac. Sci. Technol. A 3, 171–175 (1985) https://doi.org/10.1116/1.573193

Abstract

View articletitled, Indium ion implantation in Hg0.78Cd0.22Te/CdTe

Open the PDF for in another window

1/ f noise in p‐n junction diodes

T. G. M. Kleinpenning

J. Vac. Sci. Technol. A 3, 176–182 (1985) https://doi.org/10.1116/1.573194

Abstract

View articletitled, 1/ f noise in p‐n junction diodes

Open the PDF for in another window

1/f noise in ion‐implanted and double‐layer epitaxial HgCdTe photodiodes

W. A. Radford; C. E. Jones

J. Vac. Sci. Technol. A 3, 183–188 (1985) https://doi.org/10.1116/1.573195

Abstract

View articletitled, 1/f noise in ion‐implanted and double‐layer epitaxial HgCdTe photodiodes

Open the PDF for in another window

Origin of 1/f noise observed in Hg_0.7Cd_0.3Te variable area photodiode arrays

H. K. Chung; M. A. Rosenberg; P. H. Zimmermann

J. Vac. Sci. Technol. A 3, 189–191 (1985) https://doi.org/10.1116/1.573196

Abstract

View articletitled, Origin of 1/f noise observed in Hg0.7Cd0.3Te variable area photodiode arrays

Open the PDF for in another window

Excess (1/f ) noise in Hg_0.7Cd_0.3Te p‐n junctions

J. Bajaj; G. M. Williams; N. H. Sheng; M. Hinnrichs; D. T. Cheung; J. P. Rode; W. E. Tennant

J. Vac. Sci. Technol. A 3, 192–194 (1985) https://doi.org/10.1116/1.573198

Abstract

View articletitled, Excess (1/f ) noise in Hg0.7Cd0.3Te p‐n junctions

Open the PDF for in another window

Photochemical oxidation of (Hg, Cd)Te: Passivation processes and characteristics

B. K. Janousek; R. C. Carscallen

J. Vac. Sci. Technol. A 3, 195–198 (1985) https://doi.org/10.1116/1.573199

Abstract

View articletitled, Photochemical oxidation of (Hg, Cd)Te: Passivation processes and characteristics

Open the PDF for in another window

Electrical properties of the SiO₂:HgCdTe interface

J. A. Wilson; V. A. Cotton

J. Vac. Sci. Technol. A 3, 199–202 (1985) https://doi.org/10.1116/1.573200

Abstract

View articletitled, Electrical properties of the SiO2:HgCdTe interface

Open the PDF for in another window

Surface stoichiometry changes induced by the hydrogenation of Hg_0.72Cd_0.28Te

G. D. Davis; N. E. Byer; R. A. Riedel; R. R. Daniels; G. Margaritondo

J. Vac. Sci. Technol. A 3, 203–205 (1985) https://doi.org/10.1116/1.573202

Abstract

View articletitled, Surface stoichiometry changes induced by the hydrogenation of Hg0.72Cd0.28Te

Open the PDF for in another window

Surface and bulk structural defects in Hg_1−xCd_xTe

S. Cole; G. P. Carey; J. A. Silberman; W. E. Spicer; J. A. Wilson

J. Vac. Sci. Technol. A 3, 206–211 (1985) https://doi.org/10.1116/1.573203

Abstract

View articletitled, Surface and bulk structural defects in Hg1−xCdxTe

Open the PDF for in another window

Surface characterization of Hg_0.7Cd_0.3Te native oxides

J. F. Wager; D. R. Rhiger

J. Vac. Sci. Technol. A 3, 212–217 (1985) https://doi.org/10.1116/1.573204

Abstract

View articletitled, Surface characterization of Hg0.7Cd0.3Te native oxides

Open the PDF for in another window

Kinetics and mechanism of HgCdTe oxidation by ac impedance

R. T. Talasek; M. J. Ohlson; A. J. Syllaios

J. Vac. Sci. Technol. A 3, 218–221 (1985) https://doi.org/10.1116/1.573205

Abstract

View articletitled, Kinetics and mechanism of HgCdTe oxidation by ac impedance

Open the PDF for in another window

Comparative study of activated oxygen uptake on HgTe, Hg_0.69Cd_0.31Te, and CdTe

J. A. Silberman; D. Laser; I. Lindau; W. E. Spicer; J. A. Wilson

J. Vac. Sci. Technol. A 3, 222–225 (1985) https://doi.org/10.1116/1.573206

Abstract

View articletitled, Comparative study of activated oxygen uptake on HgTe, Hg0.69Cd0.31Te, and CdTe

Open the PDF for in another window

Raman characterization of Hg₁_−xCd_xTe and related materials

P. M. Amirtharaj; K. K. Tiong; P. Parayanthal; Fred H. Pollak; J. K. Furdyna

J. Vac. Sci. Technol. A 3, 226–232 (1985) https://doi.org/10.1116/1.573207

Abstract

View articletitled, Raman characterization of Hg1−xCdxTe and related materials

Open the PDF for in another window

Angle‐resolved photoemission spectroscopy of Hg₁_−xCd_xTe

J. A. Silberman; D. Laser; C. K. Shih; D. J. Friedman; I. Lindau; W. E. Spicer; J. A. Wilson

J. Vac. Sci. Technol. A 3, 233–237 (1985) https://doi.org/10.1116/1.573209

Abstract

View articletitled, Angle‐resolved photoemission spectroscopy of Hg1−xCdxTe

Open the PDF for in another window

Potential barriers in HgCdTe heterojunctions

P. R. Bratt; T. N. Casselman

J. Vac. Sci. Technol. A 3, 238–245 (1985) https://doi.org/10.1116/1.573210

Abstract

View articletitled, Potential barriers in HgCdTe heterojunctions

Open the PDF for in another window

Characterization of anisotype and isotype Hg_0.8Cd_0.2Te/CdTe heterojunctions

P. LoVecchio; M. B. Reine; M. N. Grimbergen

J. Vac. Sci. Technol. A 3, 246–254 (1985) https://doi.org/10.1116/1.573211

Abstract

View articletitled, Characterization of anisotype and isotype Hg0.8Cd0.2Te/CdTe heterojunctions

Open the PDF for in another window

TEM investigation of the differences in ion milling induced damage of Hg_1−xCd_xTe and CdTe heterojunctions

G. P. Carey; S. Cole; T. Yamashita; J. A. Silberman; W. E. Spicer; J. A. Wilson

J. Vac. Sci. Technol. A 3, 255–258 (1985) https://doi.org/10.1116/1.573212

Abstract

View articletitled, TEM investigation of the differences in ion milling induced damage of Hg1−xCdxTe and CdTe heterojunctions

Open the PDF for in another window

Photoabsorptance and electron lifetime measurement in HgCdTe

O. L. Doyle; J. A. Mroczkowski; J. F. Shanley

J. Vac. Sci. Technol. A 3, 259–263 (1985) https://doi.org/10.1116/1.573213

Abstract

View articletitled, Photoabsorptance and electron lifetime measurement in HgCdTe

Open the PDF for in another window

Etch pit studies in CdTe crystals

Y.‐C. Lu; R. K. Route; D. Elwell; R. S. Feigelson

J. Vac. Sci. Technol. A 3, 264–270 (1985) https://doi.org/10.1116/1.573214

Abstract

View articletitled, Etch pit studies in CdTe crystals

Open the PDF for in another window

The magnetophonon effect: A tool for characterizing Hg_1−xCd_xTe

S. W. McClure; D. G. Seiler; C. L. Littler; M. W. Goodwin

J. Vac. Sci. Technol. A 3, 271–275 (1985) https://doi.org/10.1116/1.573215

Abstract

View articletitled, The magnetophonon effect: A tool for characterizing Hg1−xCdxTe

Open the PDF for in another window

Hg loss rate limitation in HgCdTe thermal processing

W. G. Opyd; K. C. Dimiduk; T. W. Sigmon; J. F. Gibbons

J. Vac. Sci. Technol. A 3, 276–279 (1985) https://doi.org/10.1116/1.573216

Abstract

View articletitled, Hg loss rate limitation in HgCdTe thermal processing

Open the PDF for in another window

Investigation of generation processes at the SiO₂/HgCdTe interface by gate controlled diodes

J. P. Rosbeck; E. R. Blazejewski

J. Vac. Sci. Technol. A 3, 280–284 (1985) https://doi.org/10.1116/1.573240

Abstract

View articletitled, Investigation of generation processes at the SiO2/HgCdTe interface by gate controlled diodes

Open the PDF for in another window

Issues

RSS

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only