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Volume 28, Issue 5

September 2010

ISSN 0734-2101

EISSN 1520-8559

Review Article

Interfacial organic layers: Tailored surface chemistry for nucleation and growth

Kevin J. Hughes; James R. Engstrom

J. Vac. Sci. Technol. A 28, 1033–1059 (2010) https://doi.org/10.1116/1.3480920

Abstract

View articletitled, Interfacial organic layers: Tailored surface chemistry for nucleation and growth

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Articles

Comparison of the sputter rates of oxide films relative to the sputter rate of ${SiO}_{2}$

D. R. Baer; M. H. Engelhard; A. S. Lea; P. Nachimuthu; T. C. Droubay; J. Kim; B. Lee; C. Mathews; R. L. Opila; L. V. Saraf; W. F. Stickle; R. M. Wallace; B. S. Wright

J. Vac. Sci. Technol. A 28, 1060–1072 (2010) https://doi.org/10.1116/1.3456123

Abstract

View articletitled, Comparison of the sputter rates of oxide films relative to the sputter rate of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>SiO</mtext></mrow><mn>2</mn></msub></mrow></math>

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Control of surface roughness during high-speed chemical dry thinning of silicon wafer

W. Heo; J. H. Ahn; N.-E. Lee

J. Vac. Sci. Technol. A 28, 1073–1077 (2010) https://doi.org/10.1116/1.3456124

Abstract

View articletitled, Control of surface roughness during high-speed chemical dry thinning of silicon wafer

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Negative real parts of the equivalent permittivity, permeability, and refractive index of sculptured-nanorod arrays of silver

Yi-Jun Jen; Akhlesh Lakhtakia; Ching-Wei Yu; Yu-Hsiung Wang

J. Vac. Sci. Technol. A 28, 1078–1083 (2010) https://doi.org/10.1116/1.3456125

Abstract

View articletitled, Negative real parts of the equivalent permittivity, permeability, and refractive index of sculptured-nanorod arrays of silver

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Effects of postdeposition annealing on physical and electrical properties of high- $k$ ${Yb}_{2} {TiO}_{5}$ dielectrics

Tung-Ming Pan; Xin-Chang Wu; Li-Chen Yen

J. Vac. Sci. Technol. A 28, 1084–1088 (2010) https://doi.org/10.1116/1.3456126

Abstract

View articletitled, Effects of postdeposition annealing on physical and electrical properties of high-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">k</mi></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Yb</mtext></mrow><mn>2</mn></msub><msub><mrow><mtext>TiO</mtext></mrow><mn>5</mn></msub></mrow></math> dielectrics

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Investigation of microstructure, surface morphology, and hardness properties of PtIr films by magnetron sputtering

Chao-Te Lee; Bo-Heng Liu; Chun-Ming Chang; Yu-Wei Lin

J. Vac. Sci. Technol. A 28, 1089–1091 (2010) https://doi.org/10.1116/1.3457490

Abstract

View articletitled, Investigation of microstructure, surface morphology, and hardness properties of PtIr films by magnetron sputtering

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Nanostructured europium oxide thin films deposited by pulsed laser ablation of a metallic target in a He buffer atmosphere

H. Luna; D. F. Franceschini; R. Prioli; R. B. Guimarães; C. M. Sanchez; G. P. Canal; M. D. L. Barbosa; R. M. O. Galvão

J. Vac. Sci. Technol. A 28, 1092–1098 (2010) https://doi.org/10.1116/1.3457784

Abstract

View articletitled, Nanostructured europium oxide thin films deposited by pulsed laser ablation of a metallic target in a He buffer atmosphere

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Vacuum-calibration apparatus with pressure down to $10^{- 10} Pa$

Detian Li; Meiru Guo; Yongjun Cheng; Yan Feng; Dixin Zhang

J. Vac. Sci. Technol. A 28, 1099–1104 (2010) https://doi.org/10.1116/1.3457934

Abstract

View articletitled, Vacuum-calibration apparatus with pressure down to <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msup><mrow><mn>10</mn></mrow><mrow><mo>−</mo><mn>10</mn></mrow></msup><mtext> </mtext><mtext>Pa</mtext></mrow></math>

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MD simulations of GaN sputtering by ${Ar}^{+}$ ions: Ion-induced damage and near-surface modification under continuous bombardment

Emilie Despiau-Pujo; Pascal Chabert

J. Vac. Sci. Technol. A 28, 1105–1110 (2010) https://doi.org/10.1116/1.3460904

Abstract

View articletitled, MD simulations of GaN sputtering by <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msup><mrow><mtext>Ar</mtext></mrow><mo>+</mo></msup></mrow></math> ions: Ion-induced damage and near-surface modification under continuous bombardment

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Effective atomic layer deposition procedure for Al-dopant distribution in ZnO thin films

Jin Yong Kim; Yong-June Choi; Hyung-Ho Park; Stephen Golledge; David C. Johnson

J. Vac. Sci. Technol. A 28, 1111–1114 (2010) https://doi.org/10.1116/1.3460905

Abstract

View articletitled, Effective atomic layer deposition procedure for Al-dopant distribution in ZnO thin films

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Induced changes on visible emission and conductive type in N-doped ZnO films by rapid thermal process

Z. P. Shan; S. L. Gu; K. P. Wu; S. M. Zhu; K. Tang; Y. D. Zheng

J. Vac. Sci. Technol. A 28, 1115–1121 (2010) https://doi.org/10.1116/1.3462031

Abstract

View articletitled, Induced changes on visible emission and conductive type in N-doped ZnO films by rapid thermal process

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Methods for measurement of electron emission yield under low energy electron-irradiation by collector method and Kelvin probe method

Thomas Tondu; Mohamed Belhaj; Virginie Inguimbert

J. Vac. Sci. Technol. A 28, 1122–1125 (2010) https://doi.org/10.1116/1.3462039

Abstract

View articletitled, Methods for measurement of electron emission yield under low energy electron-irradiation by collector method and Kelvin probe method

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Microstructure and tribological performance of nanocomposite Ti–Si–C–N coatings deposited using hexamethyldisilazane precursor

Ronghua Wei; Christopher Rincon; Edward Langa; Qi Yang

J. Vac. Sci. Technol. A 28, 1126–1132 (2010) https://doi.org/10.1116/1.3463709

Abstract

View articletitled, Microstructure and tribological performance of nanocomposite Ti–Si–C–N coatings deposited using hexamethyldisilazane precursor

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Signal enhancement strategies for angular profile measurements of gas injected in ultrahigh vacuum

Laurent Isnard; Richard Arès

J. Vac. Sci. Technol. A 28, 1133–1140 (2010) https://doi.org/10.1116/1.3467031

Abstract

View articletitled, Signal enhancement strategies for angular profile measurements of gas injected in ultrahigh vacuum

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Cluster size dependence of Pt core-level shifts for mass-selected Pt clusters on ${TiO}_{2} (110)$ surfaces

Noritake Isomura; Xingyang Wu; Hirohito Hirata; Yoshihide Watanabe

J. Vac. Sci. Technol. A 28, 1141–1144 (2010) https://doi.org/10.1116/1.3467033

Abstract

View articletitled, Cluster size dependence of Pt core-level shifts for mass-selected Pt clusters on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>TiO</mtext></mrow><mn>2</mn></msub><mrow><mo>(</mo><mrow><mn>110</mn></mrow><mo>)</mo></mrow></mrow></math> surfaces

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Relaxation of the electrical properties of vacuum-deposited ${a-Se}_{1 - x} {As}_{x}$ photoconductive films: Charge-carrier lifetimes and drift mobilities

Chris Allen; George Belev; Robert Johanson; Safa Kasap

J. Vac. Sci. Technol. A 28, 1145–1156 (2010) https://doi.org/10.1116/1.3472623

Abstract

View articletitled, Relaxation of the electrical properties of vacuum-deposited <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>a-Se</mtext></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mrow><mtext>As</mtext></mrow><mi>x</mi></msub></mrow></math> photoconductive films: Charge-carrier lifetimes and drift mobilities

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Identification of $B- K$ near edge x-ray absorption fine structure peaks of boron nitride thin films prepared by sputtering deposition

Masahito Niibe; Kazuyoshi Miyamoto; Tohru Mitamura; Kozo Mochiji

J. Vac. Sci. Technol. A 28, 1157–1160 (2010) https://doi.org/10.1116/1.3474913

Abstract

View articletitled, Identification of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mtext>B-</mtext><mi>K</mi></mrow></math> near edge x-ray absorption fine structure peaks of boron nitride thin films prepared by sputtering deposition

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Crystallization, metastable phases, and demixing in a hafnia-titania nanolaminate annealed at high temperature

Massiel Cristina Cisneros-Morales; Carolyn Rubin Aita

J. Vac. Sci. Technol. A 28, 1161–1168 (2010) https://doi.org/10.1116/1.3474973

Abstract

View articletitled, Crystallization, metastable phases, and demixing in a hafnia-titania nanolaminate annealed at high temperature

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200-mm-diameter neutral beam source based on inductively coupled plasma etcher and silicon etching

Tomohiro Kubota; Osamu Nukaga; Shinji Ueki; Masakazu Sugiyama; Yoshimasa Inamoto; Hiroto Ohtake; Seiji Samukawa

J. Vac. Sci. Technol. A 28, 1169–1174 (2010) https://doi.org/10.1116/1.3474977

Abstract

View articletitled, 200-mm-diameter neutral beam source based on inductively coupled plasma etcher and silicon etching

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Inverse Stranski–Krastanov growth in InGaAs/InP

L. Sears; A. Riposan; J. Mirecki Millunchick

J. Vac. Sci. Technol. A 28, 1175–1180 (2010) https://doi.org/10.1116/1.3474982

Abstract

View articletitled, Inverse Stranski–Krastanov growth in InGaAs/InP

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F and Cl detection limits in secondary ion mass spectrometry measurements of Si and ${SiO}_{2}$ samples

A. L. Pivovarov; G. M. Guryanov

J. Vac. Sci. Technol. A 28, 1181–1186 (2010) https://doi.org/10.1116/1.3474983

Abstract

View articletitled, F and Cl detection limits in secondary ion mass spectrometry measurements of Si and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>SiO</mtext></mrow><mn>2</mn></msub></mrow></math> samples

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Epitaxial growth of germanium on silicon using a ${Gd}_{2} O_{3} / Si$ (111) crystalline template

G. Niu; L. Largeau; G. Saint-Girons; B. Vilquin; J. Cheng; O. Mauguin; G. Hollinger

J. Vac. Sci. Technol. A 28, 1187–1190 (2010) https://doi.org/10.1116/1.3478301

Abstract

View articletitled, Epitaxial growth of germanium on silicon using a <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Gd</mtext></mrow><mn>2</mn></msub><msub><mtext>O</mtext><mn>3</mn></msub><mo>/</mo><mtext>Si</mtext></mrow></math> (111) crystalline template

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Vacuum breakdown limit and quantum efficiency obtained for various technical metals using dc and pulsed voltage sources

F. Le Pimpec; C. Gough; M. Paraliev; R. Ganter; C. Hauri; S. Ivkovic

J. Vac. Sci. Technol. A 28, 1191–1202 (2010) https://doi.org/10.1116/1.3478300

Abstract

View articletitled, Vacuum breakdown limit and quantum efficiency obtained for various technical metals using dc and pulsed voltage sources

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In situ study of nickel formation during decomposition of chemical vapor deposition ${Ni}_{3} N$ films

E. Lindahl; M. Ottosson; J.-O. Carlsson

J. Vac. Sci. Technol. A 28, 1203–1209 (2010) https://doi.org/10.1116/1.3478298

Abstract

View articletitled, In situ study of nickel formation during decomposition of chemical vapor deposition <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Ni</mtext></mrow><mn>3</mn></msub><mtext>N</mtext></mrow></math> films

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Effect of process conditions on the microstructural formation of dc reactively sputter deposited AlN

Samuel D. Ekpe; Francisco J. Jimenez; Steven K. Dew

J. Vac. Sci. Technol. A 28, 1210–1214 (2010) https://doi.org/10.1116/1.3478670

Abstract

View articletitled, Effect of process conditions on the microstructural formation of dc reactively sputter deposited AlN

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Electron stimulated desorption from bare and nonevaporable getter coated stainless steels

O. B. Malyshev; A. P. Smith; R. Valizadeh; A. Hannah

J. Vac. Sci. Technol. A 28, 1215–1225 (2010) https://doi.org/10.1116/1.3478672

Abstract

View articletitled, Electron stimulated desorption from bare and nonevaporable getter coated stainless steels

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Deep GaN etching by inductively coupled plasma and induced surface defects

J. Ladroue; A. Meritan; M. Boufnichel; P. Lefaucheux; P. Ranson; R. Dussart

J. Vac. Sci. Technol. A 28, 1226–1233 (2010) https://doi.org/10.1116/1.3478674

Abstract

View articletitled, Deep GaN etching by inductively coupled plasma and induced surface defects

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Low temperature deposition of hydrogenated nanocrystalline SiC films by helicon wave plasma enhanced chemical vapor deposition

Wei Yu; Wanbing Lu; Xiaoyun Teng; Wenge Ding; Li Han; Guangsheng Fu

J. Vac. Sci. Technol. A 28, 1234–1239 (2010) https://doi.org/10.1116/1.3478675

Abstract

View articletitled, Low temperature deposition of hydrogenated nanocrystalline SiC films by helicon wave plasma enhanced chemical vapor deposition

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X-ray photoemission spectroscopy of ${Sr}_{2} {FeMoO}_{6}$ film stoichiometry and valence state

M. Rutkowski; A. J. Hauser; F. Y. Yang; R. Ricciardo; T. Meyer; P. M. Woodward; A Holcombe; P. A. Morris; L. J. Brillson

J. Vac. Sci. Technol. A 28, 1240–1244 (2010) https://doi.org/10.1116/1.3478677

Abstract

View articletitled, X-ray photoemission spectroscopy of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Sr</mtext></mrow><mn>2</mn></msub><msub><mrow><mtext>FeMoO</mtext></mrow><mn>6</mn></msub></mrow></math> film stoichiometry and valence state

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Formation of nanoscale clusters during the initial stages of ${CaF}_{2}$ growth on miscut Si(111)

T. E. Kidd; S. Davis; D. Klein; V. Matveeva; V. Sifeeva; N. G. Becker

J. Vac. Sci. Technol. A 28, 1245–1249 (2010) https://doi.org/10.1116/1.3478678

Abstract

View articletitled, Formation of nanoscale clusters during the initial stages of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>CaF</mtext></mrow><mn>2</mn></msub></mrow></math> growth on miscut Si(111)

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Controlling the work function of a diamond-like carbon surface by fluorination with ${XeF}_{2}$

Ana Tarditi; Petro Kondratyuk; Pak Kin Wong; Andrew J. Gellman

J. Vac. Sci. Technol. A 28, 1250–1254 (2010) https://doi.org/10.1116/1.3480335

Abstract

View articletitled, Controlling the work function of a diamond-like carbon surface by fluorination with <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>XeF</mtext></mrow><mn>2</mn></msub></mrow></math>

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Preparation and topography analysis of randomly textured glass substrates

Eerke Bunte; Wendi Zhang; Jürgen Hüpkes

J. Vac. Sci. Technol. A 28, 1255–1258 (2010) https://doi.org/10.1116/1.3480338

Abstract

View articletitled, Preparation and topography analysis of randomly textured glass substrates

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Low-energy ion bombardment to tailor the interfacial and mechanical properties of polycrystalline $3 C$ -silicon carbide

Fang Liu; Carolina H. Li; Albert P. Pisano; Carlo Carraro; Roya Maboudian

J. Vac. Sci. Technol. A 28, 1259–1262 (2010) https://doi.org/10.1116/1.3480341

Abstract

View articletitled, Low-energy ion bombardment to tailor the interfacial and mechanical properties of polycrystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>3</mn><mi>C</mi></mrow></math>-silicon carbide

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Low energy ${Ar}^{+}$ bombardment of GaN surfaces: A statistical study of ion reflection and sputtering

Emilie Despiau-Pujo; Pascal Chabert

J. Vac. Sci. Technol. A 28, 1263–1268 (2010) https://doi.org/10.1116/1.3480344

Abstract

View articletitled, Low energy <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msup><mrow><mtext>Ar</mtext></mrow><mo>+</mo></msup></mrow></math> bombardment of GaN surfaces: A statistical study of ion reflection and sputtering

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Dye-sensitized solar cells: Effect of $Ar / O_{2}$ gas-flow ratio on the structural and morphological properties of facing-target sputter-deposited ${TiO}_{2}$ electrode

M. F. Hossain; T. Takahashi

J. Vac. Sci. Technol. A 28, 1269–1274 (2010) https://doi.org/10.1116/1.3480919

Abstract

View articletitled, Dye-sensitized solar cells: Effect of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mtext>Ar</mtext><mo>/</mo><msub><mtext>O</mtext><mn>2</mn></msub></mrow></math> gas-flow ratio on the structural and morphological properties of facing-target sputter-deposited <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>TiO</mtext></mrow><mn>2</mn></msub></mrow></math> electrode

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Brief Reports and Comments

Monolayer structure of a liquid crystalline perylene derivative on bare and on thiol-terminated Au(111) surfaces

A. S. Wan; G. P. Kushto; A. J. Mäkinen

J. Vac. Sci. Technol. A 28, 1275–1278 (2010) https://doi.org/10.1116/1.3462036

Abstract

View articletitled, Monolayer structure of a liquid crystalline perylene derivative on bare and on thiol-terminated Au(111) surfaces

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Cosputtered composition-spread reproducibility established by high-throughput x-ray fluorescence

John M. Gregoire; Darren Dale; Alexander Kazimirov; Francis J. DiSalvo; R. Bruce van Dover

J. Vac. Sci. Technol. A 28, 1279–1280 (2010) https://doi.org/10.1116/1.3478668

Abstract

View articletitled, Cosputtered composition-spread reproducibility established by high-throughput x-ray fluorescence

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Letters

On the frequency characteristic of inductor in the filter of Hall thrusters

Wei Liqiu; Ning Zhongxi; E. Peng; Yu Daren

J. Vac. Sci. Technol. A 28, L9–L13 (2010) https://doi.org/10.1116/1.3457152

Abstract

View articletitled, On the frequency characteristic of inductor in the filter of Hall thrusters

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